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At least 1,099 records · Page 61

Low Temperature Growth of Nanostructured Diamond Films on Metals

The field of nanocrystalline diamond and tetrahedral amorphous carbon films has been the focus of intense experimental activity in the last few years for applications in field emission display devices, optical windows, and tribological coatings, The choice of substrate used in most studies has typically been silicon. For metals, however, the thermal expansion mismatch between the diamond film and substrate gives rise to thermal stress that often results in delamination of the film. To avoid this problem in conventional CVD deposition low substrate temperatures (less than 700 C) have been used, often with the incorporation of oxygen or carbon monoxide to the feedgas mixture. Conventionally grown CVD diamond films are also rough and would require post-deposition polishing for most applications. Therefore, there is an obvious need to develop techniques for deposition of well-adhered, smooth nano-structured diamond films on metals for various tribological applications. In our work, nanostructured diamond films are grown on a titanium alloy substrate using a two-step deposition process. The first step is performed at elevated temperature (820 C) for 30 minutes using a H2/CH4/N2 gas mixture in order to grow a thin (approx. 600 nm) nanostructured diamond layer and improve film adhesion. The remainder of the deposition involves growth at low temperature (less than 600 C) in a H2/CH4/O2 gas mixture. Laser reflectance Interferometry (LRI) pattern during growth of a nanostructured diamond film on Ti-6Al-4V alloy. The first 30 minutes are at a high temperature of 820 C and the rest of the film is grown at a low temperature of 580 T. The fringe pattern is observed till the very end due to extremely low surface roughness of 40 nm. The continuation of the smooth nanostructured diamond film growth during low temperature deposition is confirmed by in-situ laser reflectance interferometry and by post-deposition micro-Raman spectroscopy and surface profilometry. Similar experiments performed without the starting nanostructured diamond layer resulted in poorly adhered films with a more crystalline appearance and a higher surface roughness. This low temperature deposition of nanostructured diamond films on metals offers advantages in cases where high residual thermal stress leads to delamination at high temperatures.

Baker, Paul A.↗

Novel High Barrier Films for Packaging Food and Medicine

Long manned missions require food packaging to maintain food safety, nutrition, and acceptability for the length of 3-5 years1,2 while the shelf life assigned by NASA for current provisions is 18-24 months1. The focus of this design project was to make a polymer film specifically to function as a high oxygen barrier to later be included in an improved multi-layer packaging system of other specialized polymers with capabilities to allow for a 5-year shelf-life. To qualify as a high oxygen barrier film and to be a successful design for the future packaging, the resulting film is required to have an oxygen transmission rate (OTR) less than 0.06 cc/ m2/24 hr/atm, the standard for the current packaging3. This new film was designed to have a decreased permeability by increasing the “tortuous path” a gas molecule travels to permeate through a film. The increase in the “tortuous path” of a gas molecule is accomplished by introducing a 2D material additive. The additive chosen for this project was hexagonal boron nitride (h-BN) which exfoliates into boron nitride nanosheets (BNNs). Nylon 6 was chosen as the candidate for the matrix. This project is required to determine the best methods to synthesize the sample film and then to test the OTR of the film to determine if this design was successful. This project examined methods for pulverizing polymer resin pellets, h-BN exfoliation, and film fabrication using a hot press. This report includes the exfoliation and analysis of h-BN, procedural preparations for films, and a modeling study of estimated OTR of the h-BN/Nylon. The work in this report did not yield a high barrier composite film because of the laboratory closure in response to COVID -19 guidance but provides a concise method of the additive preparation and film synthesis. This gives a good starting point for future research in high barrier films by 2D additive composites.

Polymer, Nylon, PET, boron nitride, nanocomposite↗

Building a road map for tailoring multilayer polyelectrolyte films

Researchers are moving a step closer to a definite road map for building layer-by-layer (LbL) assembled polyelectrolyte films, with the assistance of the Liquids Reflectometer at Oak Ridge National Laboratory's Spallation Neutron Source, in Oak Ridge, Tennessee. Scientists using the liquids reflectometer have successfully taken snapshots in close to real time of these multilayered structures for different applications when they modify the structure and function parameters. Polyelecrolytes are polymers that carry charge in aqueous solutions. They contain chemical groups that dissociate in water, making such polymers charged. Most polyelectrolytes are water soluble. They are important components in foods, soaps, shampoos, and cosmetics products. They show promise for such environmental work as oil recovery and water treatment. Polyelectrolytes are compelling because researchers can chemically modify how they interact with water for multiple applications. When two types of polyelectrolytes of opposite charge are assembled at a surface in a sequential way using the LbL assembly technique, 'the result is the forming of surface films, useful for coatings, biomedical implants and devices, controlling adhesion of biological molecules, and controlling delivery of therapeutic molecules from surfaces,' said Svetlana Sukhishvili of the Stevens Institute of Technology in New Jersey, the lead chemist on the collaboration. 'Medical doctors often prefer to deliver multiple therapeutic compounds from the coatings in a time-resolved manner,' Sukhishvili said. 'To assist them, material scientists need to learn how to build coatings in which polymer layering will not be compromised when exposed to normal physiological conditions.' 'Being able to control these properties, understanding how what you do to the materials affects their properties, this allows you to apply them to situations where interacting with an environment is very helpful, whether in a biological context or any other kind of water soluble context,' said John Ankner, lead instrument scientist for the Liquids Reflectometer. Ankner said that when several parameters are systematically altered, that allows researchers to map out the whole range of structures in the polymer. 'This work really sets a road map for how to get started with synthesizing polyelectrolyte materials for specific applications. Then, one can say, ok, this methylated material, the one that is 30% charged, is going to be what we want to use for a particular application.' The ORNL collaboration with the Stevens Institute has been conducting a series of experiments at the SNS to study layered film stratification in these polymers. Researchers stitch the polyelectrolyte chains in the LbL films together through what is called ionic pairing and arrange them within fuzzy, ultrathin layers that lie parallel to a solid surface substrate. Exposure of these films to aqueous solutions that contain salt (i.e., conditions that imitate real life) can compromise this film layering, as the salt ions act to weaken the ionic pairing that binds such layers together. So salt solutions are of key interest in studying how to make such layers for use in human applications. In the first research, Ankner, Sukhishvili and her student Li Xu looked at the effects of the layering of two types of LbL films of changing the charge density with a salt solution, and of blocking access to a charged site by nearby groups. The films were composed of positively charged variants of PDMA, a methyl polymer, and PDEA, an ethyl polymer. The other component of both systems is the ion exchanger polystyrene sulfonate (PSS) which features a fixed negative charge. First, a silicon substrate was dipped into solutions of PDMA and PDEA in dilute sodium chloride for a fixed time. Depending on the deposition time and the concentration of the solution, a nanometer-thick monolayer of the polymer adsorbs to the silicon surface. The film buildup is then continued by depositing a layer of PSS, and the cycle is repeated. The PDMA (methyl)/PSS and PDEA (ethyl)/PSS films were then annealed in varying concentrations of aqueous salt solutions. The chemists wanted to know if in these multi-layer cake-like assemblies, the structure can be systematically altered by varying the salt concentration, time in solution, and ultimately other environmental parameters, such as temperature or pH. Neutron reflectivity of the layered films exhibits the quality of the layering, in particular the concentration of the layers and how intermixed they are with adjacent layers. In this research, neutron reflectivity data from films built from 10%, 40%, and 100% charged PDMA or PDEA polyelectrolytes and 100% charged PSS were quantitatively compared to predicted, layered arrangements until the models produced reflectivity patterns matching those of the data.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Structural and optical properties of Ga{sub 2}O{sub 3}:In films deposited on MgO (1 0 0) substrates by MOCVD

Ga{sub 2}O{sub 3}:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x') of 0.09 was an epitaxial film and the films with x'=0.18 and 0.37 had mixed-phase structures of monoclinic Ga{sub 2}O{sub 3} and bixbyite In{sub 2}O{sub 3}. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films. - Graphical abstract: Low magnification XTEM (a), HRTEM (b) and SAED (c) micrographs of the interface area between Ga{sub 1.82}In{sub 0.18}O{sub 3} film and MgO substrate have showed the Ga{sub 1.82}In{sub 0.18}O{sub 3} is an epitaxial film. Highlights: > Ga{sub 1.82}In{sub 0.18}O{sub 3} epitaxial film was deposited on MgO(1 0 0) substrate. > The transmittance of the Ga{sub 2}O{sub 3}:In films in the visible region exceeded 95%. > Strong emissions were observed in the photoluminescence measurements of the films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The influence of diffusion temperature on the structural, optical and magnetic properties of manganese-doped zinc oxysulfide thin films

We investigated the structural, optical and magnetic properties of Mn-doped zinc oxysulfide films. Zn(O,S) films were deposited by a spray pyrolysis method on glass substrate. A thin Mn layer evaporated on these films served as the source for the diffusion doping. The XRD pattern of undoped films revealed the presence of two wurtzite phases corresponding to ZnS and ZnO with a strong preferred orientation along the ZnS (0 0 2) hexagonal plane direction. SEM showed a similar surface morphology for the undoped and Mn-doped films, displaying regular arrays of hexagonal micro-rods perpendicular to the substrate. The optical transmission measurements showed that both undoped and Mn diffusion-doped films had a low average transmittance less than about 10%. The gap energy is decreased from 3.42 to 3.33 eV upon annealing at 400 deg. C. Photoluminescence studies at 300 K show that the incorporation of manganese leads to a decrease of deep level band intensity compared to undoped sample. Clear ferromagnetic loops were observed for the Mn-doped Zn(O,S) films, which might be due to the presence of point defects. - Graphical abstract: M-H variation of Mn diffusion-doped Zn(O,S) thin films measured at 300 K. Highlights: > Zinc oxysulfide thin films fabricated by spray pyrolysis and doped with Mn. > Regular arrays of hexagonal micro-rods perpendicular to the substrate. > Optical transmission measurements showed that both undoped and Mn diffusion-doped films had a low average transmittance less than about 10%. > Magnetic measurements show that Mn-doped zinc oxysulfide thin films exhibit a ferromagnetism behavior at room temperature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Irradiation-Driven Restructuring of UO 2 Thin Films: Amorphization and Crystallization

Combustion synthesis in uranyl nitrate–acetylacetone–2-methoxyethanol solutions was used to deposit thin UO 2 films on aluminum substrates to investigate the irradiation-induced restructuring processes. Thermal analysis revealed that the combustion reactions in these solutions are initiated at ~160 °C. The heat released during the process and the subsequent brief annealing at 400 °C allow the deposition of polycrystalline films with 5–10 nm UO 2 grains. The use of multiple deposition cycles enables tuning of the film thicknesses in the 35–260 nm range. Irradiation with Ar 2+ ions (1.7 MeV energy and a fluence of up to 1 × 10 17 ions/cm 2 ) is utilized to generate a uniform distribution of atomic displacements within the films. X-ray fluorescence (XRF) and alpha-particle emission spectroscopy showed that the films were stable under irradiation and did not undergo sputtering degradation. X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry and uranium ionic concentrations remain stable during irradiation. The high-resolution electron microscopy imaging and electron diffraction analysis demonstrated that at the early stages of irradiation (below 1 × 10 16 ion/cm 2 ) UO 2 films show complete amorphization and beam-induced densification (sintering), resulting in a pore-free disordered film. Prolonged irradiation (5 × 10 16 ion/cm 2 ) is shown to trigger a crystallization process at the surface of the films that moves toward the UO 2 /Al interface, converting the entire amorphous material into a highly crystalline film. This work reports on an entirely different radiation-induced restructuring of the nanoscale UO 2 compared to the coarse-grained counterpart. The preparation of thin UO 2 films deposited on Al substrates fills an area of national need within the stockpile stewardship program of the National Nuclear Security Administration and fundamental research with actinides. Here, the method reported in this work produces pure, robust, and uniform thin-film actinide targets for nuclear science measurements

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films

The thermal conductivity Λ of wide bandgap semiconductor thin films, such as AlN, affects the performance of high-frequency devices, power devices, and optoelectronics. However, accurate measurements of Λ in thin films with sub-micrometer thicknesses and Λ > 100 W m -1 K -1 is challenging. Widely used pump/probe metrologies, such as time–domain thermoreflectance (TDTR) and frequency–domain thermoreflectance, lack the spatiotemporal resolution necessary to accurately quantify thermal properties of sub-micrometer thin films with high Λ. In this work, we use a combination of magneto-optic thermometry and TiN interfacial layers to significantly enhance the spatiotemporal resolution of pump/probe thermal transport measurements. We use our approach to measure Λ of 100, 400, and 1000 nm AlN thin films. We coat AlN thin films with a ferromagnetic thin-film transducer with the geometry of (1 nm-Pt/0.4 nm-Co) x3 /(2 nm-TiN). This PtCo/TiN transducer has a fast thermal response time of <50 ps, which allows us to differentiate between the thermal response of the transducer, AlN thin film, and substrate. For the 100, 400, and 1000 nm thick AlN films, we determine Λ to be 200 ± 80, 165 ± 35, and 300 ± 70 W m -1 K -1 , respectively. We conclude with an uncertainty analysis that quantifies the errors associated with pump/probe measurements of thermal conductivity, as a function of transducer type, thin-film thermal conductivity, and thin-film thickness. Time resolved magneto-optic Kerr effect experiments can measure films that are three to five times thinner than is possible with standard pump/probe metrologies, such as TDTR. This advance in metrology will enable better characterization of nanoscale heat transfer in high thermal conductivity material systems like wide bandgap semiconductor heterostructures and devices.

36 MATERIALS SCIENCE↗

Characterizing the marker-dye correction for Gafchromic EBT2 film: A comparison of three analysis methods

Purpose: Gafchromic EBT2 film has a yellow marker dye incorporated into the active layer of the film that can be used to correct the film response for small variations in thickness. This work characterizes the effect of the marker-dye correction on the uniformity and uncertainty of dose measurements with EBT2 film. The effect of variations in time postexposure on the uniformity of EBT2 is also investigated. Methods: EBT2 films were used to measure the flatness of a {sup 60}Co field to provide a high-spatial resolution evaluation of the film uniformity. As a reference, the flatness of the {sup 60}Co field was also measured with Kodak EDR2 films. The EBT2 films were digitized with a flatbed document scanner 24, 48, and 72 h postexposure, and the images were analyzed using three methods: (1) the manufacturer-recommended marker-dye correction, (2) an in-house marker-dye correction, and (3) a net optical density (OD) measurement in the red color channel. The field flatness was calculated from orthogonal profiles through the center of the field using each analysis method, and the results were compared with the EDR2 measurements. Uncertainty was propagated through a dose calculation for each analysis method. The change in the measured field flatness for increasing times postexposure was also determined. Results: Both marker-dye correction methods improved the field flatness measured with EBT2 film relative to the net OD method, with a maximum improvement of 1% using the manufacturer-recommended correction. However, the manufacturer-recommended correction also resulted in a dose uncertainty an order of magnitude greater than the other two methods. The in-house marker-dye correction lowered the dose uncertainty relative to the net OD method. The measured field flatness did not exhibit any unidirectional change with increasing time postexposure and showed a maximum change of 0.3%. Conclusions: The marker dye in EBT2 can be used to improve the response uniformity of the film. Depending on the film analysis method used, however, application of a marker-dye correction can improve or degrade the dose uncertainty relative to the net OD method. The uniformity of EBT2 was found to be independent of the time postexposure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Evaluation of the accuracy of 3DVH software estimates of dose to virtual ion chamber and film in composite IMRT QA

Purpose: A novel patient-specific intensity modulated radiation therapy (IMRT) QA system, 3DVH software and mapcheck 2, purports to be able to use diode array-measured beam doses and the patient's DICOM RT plan, structure set, and dose files to predict the delivered 3D dose distribution in the patient for comparison to the treatment planning system (TPS) calculated doses. In this study, the composite dose to an ion chamber and film in phantom predicted by the 3DVH and mapcheck 2 system is compared to the actual measured chamber and film doses. If validated in this context, then 3DVH can be used to perform an equivalent dose analysis as that obtained with film dosimetry and ion chamber-based composite IMRT QA. This is important for those losing their ability to perform film dosimetry for true composite IMRT QA and provides a measure of confidence in the accuracy of 3DVH 3D dose calculations which may replace phantom-based IMRT QA. Methods: The dosimetric results from 15 consecutive patient-specific IMRT QA tests performed by composite field irradiation of ion chamber and EDR2 film in a solid water phantom were compared to the predicted doses for those virtual detectors based on the calculated 3D dose by the 3DVH software using mapcheck 2 measured doses of each beam within each plan. For each of the 15 cases, immediately after performing the ion chamber plus film measurements, the mapcheck 2 was used to measure the dose for each beam of the plan. The dose to the volume of the virtual ion chamber and the dose distribution in the plane of the virtual film calculated by the 3DVH software was extracted. The ratio of the measured to 3DVH or eclipse-predicted ion chamber doses was calculated. The same plane in the phantom measured using film and calculated with eclipse was exported from 3DVH and the 2D gamma metric was used to compare the relationship between the film doses and the eclipse or 3DVH predicted planar doses. Also, the 3D gamma value was calculated in the 3DVH software which compares the eclipse dose to the 3DVH predicted dose distribution. For the 2D and 3D gamma metrics, 2% dose and 2 mm distance to agreement (DTA) were used. In addition, a simple dose difference was performed using either a 2% or 3% dose difference tolerance. Results: The mean ratio {+-} standard deviation of the measured vs 3DVH or vs eclipse-predicted dose to the ion chamber was 1.013 {+-} 0.015 and 1.003 {+-} 0.012, respectively. For 3DVH vs eclipse, the mean percentage of pixels failing the 3D gamma metric was 1.2% {+-} 1.4% while the failure rate for the 2D gamma metric was 1.1% {+-} 0.9%. When either 3DVH or eclipse was compared to EDR2 film, the gamma failure rate was 2.3% {+-} 2.0% and 1.6% {+-} 1.7%, respectively. Mean dose difference failures were 9%-27% {+-} 5%-15% for 2 or 3% dose difference tolerances, depending on the combination of systems tested. No statistically significant differences were found for any of the planar dosimetric comparisons. Conclusions: 3DVH + mapcheck 2 predicts the same absolute dose, the percent of pixels failing the gamma metric, and the percent of pixels failing 2% or 3% dose difference tolerance tests as one would have obtained had one made measurements in solid water phantom using an ion chamber and coronal film instead of a diode array. This is also a necessary although not sufficient condition for validation of the accuracy of 3DVH predictions of the 3D dose using beam-by-beam measurements.

61 RADIATION PROTECTION AND DOSIMETRY↗

SU-E-T-498: Initial Characterization of the New EBT XD Gafchromic Film

Purpose To assess the dosimetric accuracy of the new EBT XD (eXtended Dose) Gafchromic film and to compare the lateral scan effect between EBT XD and EBT3 film. Methods: All films were exposed in solid water using a 6 MV beam and were analyzed with FilmQA Pro software and an Epson 10000 XL scanner. Calibration was performed using films exposed to 8 known doses from 0–3000 cGy. To assess dosimetric accuracy, a 15×18 cm{sup 2} 60° EDW delivered a dose range of 200–2900 cGy to 4 separate EBT XD films. Comparison to treatment planning system (TPS) predictions was made using a gamma analysis with 2%/2mm passing criteria. To assess the lateral scan effect, 21 × 21 cm{sup 2} open fields delivered doses of 1000, 2000, and 3000 cGy isocentrically to both EBT3 and EBT XD films at 10 cm depth. Films were centered and scanned such that the widest parts of the exposed film extended lateral to the center of the scanner bed in order to maximize the lateral scan effect. Ratios of measured to TPS predicted doses for EBT3 and EBT XD film were calculated at 5 cm and 8 cm lateral from the center of the scanner bed to quantitatively assess the lateral scan effect. Results The average gamma passing rate for the EDW was 98.9% (range 98.7 – 99.1%). EBT XD film exhibited minimal lateral scan effect (<1%) up to 30 Gy. In contrast, EBT3 showed an under-response of 13% and 25% at lateral positions of 5 cm and 8 cm respectively for the 30 Gy exposure. Conclusion EBT XD can accurately measure dose over a wide dynamic range. The non-polarizing structure of its active ingredient essentially eliminates the lateral scan effect up to at least 30 Gy. EBT XD film is therefore well suited for SRS/SBRT verification measurements.

60 APPLIED LIFE SCIENCES↗

Energy dependent calibration of XR-QA2 radiochromic film with monochromatic and polychromatic x-ray beams

Purpose: This work investigates the energy response and dose-response curve determinations for XR-QA2 radiochromic film dosimetry system used for synchrotron radiation work and for quality assurance in diagnostic radiology, in the range of effective energies 18–46.5 keV. Methods: Pieces of XR-QA2 films were irradiated, in a plane transverse to the beam axis, with a monochromatic beam of energy in the range 18–40 keV at the ELETTRA synchrotron radiation facility (Trieste, Italy) and with a polychromatic beam from a laboratory x-ray tube operated at 80, 100, and 120 kV. The film calibration curve was expressed as air kerma (measured free-in-air with an ionization chamber) versus the net optical reflectance change (netΔR) derived from the red channel of the RGB scanned film image. Four functional relationships (rational, linear exponential, power, and logarithm) were tested to evaluate the best curve for fitting the calibration data. The adequacy of the various fitting functions was tested by using the uncertainty analysis and by assessing the average of the absolute air kerma error calculated as the difference between calculated and delivered air kerma. The sensitivity of the film was evaluated as the ratio of the change in net reflectance to the corresponding air kerma. Results: The sensitivity of XR-QA2 films increased in the energy range 18–39 keV, with a maximum variation of about 170%, and decreased in the energy range 38–46.5 keV. The present results confirmed and extended previous findings by this and other groups, as regards the dose response of the radiochromic film XR-QA2 to monochromatic and polychromatic x-ray beams, respectively. Conclusions: The XR-QA2 radiochromic film response showed a strong dependence on beam energy for both monochromatic and polychromatic beams in the range of half value layer values from 0.55 to 6.1 mm Al and corresponding effective energies from 18 to 46.5 keV. In this range, the film response varied by 170%, from a minimum sensitivity of 0.0127 to a maximum sensitivity of 0.0219 at 10 mGy air kerma in air. The more suitable function for air kerma calibration of the XR-QA2 radiochromic film was the power function. A significant batch-to-batch variation, up to 55%, in film response at 120 kV (46.5 keV effective energy) was observed in comparison with published data.

61 RADIATION PROTECTION AND DOSIMETRY↗

Real time intelligent process control system for thin film solar cell manufacturing

This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStrata’s fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process “on-the-fly” in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can be achieved by optimizing the manufactured product and process in real time without changing the manufacturing technology.

14 SOLAR ENERGY↗

Atmospheric Pressure Plasma CVD of Amorphous Hydrogenated Silicon Carbonitride (a-SiCN:H) Films Using Triethylsilane and Nitrogen

Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films are synthesized by atmospheric pressure plasma enhanced chemical vapor (AP-PECVD) deposition using the Surfx Atomflow{trademark} 250D APPJ source with triethylsilane (HSiEt{sub 3}, TES) and nitrogen as the precursor and the reactive gases, respectively. The effect of the substrate temperature (T{sub s}) on the growth characteristics and the properties of a-SiCN:H films was evaluated. The properties of the films were investigated via scanning electron microscopy (SEM), atomic force microscopy (AFM) for surface morphological analyses, Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) for chemical and compositional analyses; spectroscopic ellipsometry for optical properties and thickness determination and nanoindentation to determine the mechanical properties of the a-SiCN:H films. Films deposited at low T{sub s} depict organic like features, while the films deposited at high T{sub s} depict ceramic like features. FTIR and XPS studies reveal that an increases in T{sub s} helps in the elimination of organic moieties and incorporation of nitrogen in the film. Films deposited at T{sub s} of 425 C have an index of refraction (n) of 1.84 and hardness (H) of 14.8 GPa. A decrease in the deposition rate between T{sub s} of 25 and 250 C and increase in deposition rate between T{sub s} of 250 and 425 C indicate that the growth of a-SiCN:H films at lower T{sub s} are surface reaction controlled, while at high temperatures film growth is mass-transport controlled. Based on the experimental results, a potential route for film growth is proposed.

36 MATERIALS SCIENCE↗

Effect of Substrate Temperature on Structural, Morphological, Magnetic, and Electrical Properties of Fe{sub 2}CoSi Heusler Alloy Thin Films for Spin-Based Device Applications

Fe{sub 2}CoSi based Heusler alloy thin films are deposited on single crystal Si (111) substrate at different substrate temperatures varying from room temperature to 600 °C using ultrahigh vacuum DC magnetron sputtering. Structural analysis of the prepared thin films is carried out using GI-XRD measurement and it conform ordered L2{sub 1} crystal structure of the films deposited at 450 °C and above. The atomic force microscopic (AFM) images of Fe{sub 2}CoSi thin films exhibiting 3D-like growth on Si (111) substrate at varying temperatures. The magnetic property of the thin films is studied using vibrating sample magnetometer (VSM). At 450 °C of substrate temperature, the prepared thin film exhibits high saturation magnetization (M{sub s} = 948 emu/cc) and low coercivity (H{sub c} = 8 Oe). The self-energy magnetization of the film and its own field is very high, when the temperature of the substrate was maintained at 450 °C and switching field ratio for this film was obtained as ~ 0.9 due to its high crystallinity and atomic ordering. The electrical property of Fe{sub 2}CoSi thin film is investigated using four-probe technique and a positive magnetoresistive behavior was observed for thin film deposited at a substrate temperature of 450 °C which indicates the possible half-metallic nature at room temperature. The enhanced magnetic and electrical properties obtained for the thin film prepared at 450 °C substrate temperature is highly suitable for spin based device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Relation between carriers hopping rate and structural constants in amorphous carbon nickel films with different nickel nanoparticles distributions

In this paper, the films were prepared by radio frequency magnetron co-sputtering technique. The effect of different mosaic targets made of nickel strips and graphite pure on the dielectric relaxation time, the carriers hopping rate, the fractal dimensions and the optical loss of films were studied. The values of the optical band gap of films using the cross-point between the tangent of the plot of lower and higher values of the photon energy were calculated. The films deposited at 4.64% have maximum hopping rate of about 8.6 × 10{sup 12} S{sup −1}. It can be seen that the films deposited at 3.92% have minimum value of fractal dimension of 2.27. With increasing Ni content of films a nonmetal–metal transition is observed which it is explainable by the power law of percolation theory. Critical metal content and the critical exponent of films were 87.25% and 1, respectively. With increasing Ni content, the carriers effective mass of films decreased and average lattice separation values of films increased. Films deposited at 3.92% have minimum value of Debye frequency ν{sub D} of about 1.09 × 10{sup 12} Hz. The value of energy loss by free charge carriers when traversing the bulk and surface of films at 3.92% has maximum value and it has an increasing function behavior with energy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Properties of Nb3Sn films fabricated by magnetron sputtering from a single target

Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for 24 h at temperatures of 800-1000 {\deg}C were investigated. The effect of the annealing time at 1000 {\deg}C was examined for 1, 12, and 24 h. The film properties were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The DC superconducting properties of the films were characterized by a four-point probe measurement down to cryogenic temperatures. The RF surface resistance of films was measured over a temperature range of 6-23 K using a 7.4 GHz sapphire-loaded Nb cavity. As-deposited Nb3Sn films on sapphire had a superconducting critical temperature of 17.21 K, which improved to 17.83 K when the film was annealed at 800 {\deg}C for 24 h. For the films annealed at 1000 {\deg}C, the surface Sn content was reduced to ~11.3 % for an annealing time of 12 h and to ~4.1 % for an annealing time of 24 h. The Raman spectra of the films confirmed the microstructural evolution after annealing. The RF superconducting critical temperature of the as-deposited Nb3Sn films on Nb was 16.02 K, which increased to 17.44 K when the film was annealed at 800 {\deg}C for 24 h.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Understanding non-stochiometric deposition of multi-principal elemental NiCoCr thin films

Multi-principal elemental NiCoCr thin films with compositional flexibility have potential applications as a thermal barrier, corrosion-resistant coatings, and functional energy materials. In this study, the non-stochiometric multi-principal element alloy thin film formation behavior from an equiatomic ablation target of NiCoCr using pulsed laser deposition has been reported. Here, the effect of varying laser fluence on compositions of constituent elements in the NiCoCr thin films is systematically investigated. The increase in laser fluence typically increases the likelihood of acquiring undesirable particulates in thin films. Therefore, to maintain the film quality the laser fluences are adjusted within the range of 1.3–3.3 J·cm -2 , while the film thicknesses are kept constant at ~30 nm. Results show that the constituent elements are well-distributed in the formed NiCoCr thin films, however, having average atomic percentages of Ni and Cr twice as high as Co irrespective of the equiatomic composition of individual elements in the ablation target. This stochiometric alteration in the as-deposited thin films is governed by the rate of ablation and subsequent evaporation of each element, which is facilitated by the optical properties and vapor pressure of individual constituent elements. Additionally, electron energy-loss spectroscopy and x-ray absorption spectroscopy analysis reveal that the thin films have partially oxidized, with the Cr oxidation contributing the most to the O-K edge in comparison to Ni and Co. Finally, this study presents a laser-assisted pathway for fabricating compositionally flexible NiCoCr thin films and develops an understanding of the non-equilibrium laser-material interactions and how the intrinsic properties of constituent elements affect the stoichiometric flow of materials from the target to the final film deposition.

36 MATERIALS SCIENCE↗

Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO{sub 3} targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO{sub 3} target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. - Graphical abstract: The film thickness and the sheet resistance (R{sub s}) with respect to the sample position of WInZnO films, which is compositionally graded by rf power for each target, are exhibited. Highlights: > The compositional dependence of co-sputtered WInZnO film properties is first investigated. > W cations work as oxygen binders in determining the electronic properties. > All the WInZnO films show an amorphous phase regardless of the W/(In+Zn+W) ratio. > W metal cations are effectively incorporated into the WInZnO films by the combinatorial technique.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗