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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Characterization of Digital Silicon Photomultipliers

Digital Silicon photomultipliers (Digital SiPMs) have become an increasingly viable option for single-photon detection due to their compact size and precise timing and resolution. The following work characterizes the noise performance of a diSiPM designed and tested in-house at Fermilab. The SiPM consists of a 26x32 array of single-photon avalanche diode (SPAD) cells. Through the implementation of a shift register masking circuit, individual SPAD cells can be enabled and disabled at will, allowing for precise detection measurements of single columns (accumulator channels) and cells. The provided circuit design operates on voltage clock pulses and collects data on clock edges allowing for precise tuning of the data collection process by varying the clock frequency, pulse width, and integration period.

Shoemaker, Oliver [U. Chicago (main)]↗
DOE OSTI2022

Forward silicon vertex/tracking detector design and R$\&$D for the future Electron-Ion Collider

The proposed high-luminosity high-energy Electron-Ion Collider (EIC) will provide a clean environment to precisely study several fundamental questions in the fields of high-energy and nuclear physics . A low material budget and high granularity silicon vertex/tracking detector is critical to carry out a series of hadron and jet measurements at the future EIC especially for the heavy flavor product reconstruction or tagging. The conceptual design of a proposed forward silicon tracking detector with the pseudorapidity coverage from 1.2 to 3.5 has been developed in integration with different magnet options and the other EIC detector sub-systems. The tracking performance of this detector enables precise heavy flavor hadron and jet measurements in the hadron beam going direction. The detector R&D for the proposed silicon technology candidates: Low Gain Avalanche Diode (LGAD) and radiation hard depleted Monolithic Active Pixel Sensor (MALTA), which can provide good spatial and timing resolutions, is underway. Bench test results of the LGAD and MALTA prototype sensors will be discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Total kinetic energy release in the fast neutron induced fission of actinide nuclei

The total kinetic energy release and fission mass distributions for the fast neutron (En = 3–100 MeV) induced fission of 232 Th, 233 U, 235 U, 237 Np, 239 Pu, 240 Pu, and 242 Pu have been measured using the LANSCE facility. The neutron energies were deduced from time-of- flight measurements. The fission fragments were detected using Si PIN diode detectors, giving us the fragment energies. The actinide targets were made by vapor deposition leading to high-quality targets, that were thin and uniform with reduced impurities. Corrections were made to the data for pulse height defect and the fragment energy loss in the target and its backing. The TKE distributions were Gaussian in shape and their mean value as a function of incoming neutron energy could be fitted with second order polynomials. In the case of 233 U and 235 U, our measurements agree with prior work. Our measurements for 232 Th are unique. Our data agree with Viola scaling. The constant position of the heavy mass peak is interpreted as being due to the influence of the N = 88 and Z = 50 shells. The GEF model predictions agree with the data in general as do the CGMF model predictions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Landfill Emissions of Methane Inferred from Unmanned Aerial Vehicle and Mobile Ground Measurements

Municipal solid waste landfills are significant sources of atmospheric methane, the second most important greenhouse gas after carbon dioxide. Large emissions of methane from landfills contribute not only to global climate change, but also to local ozone formation due to the enhancement of radical chain lengths in atmospheric reactions of volatile organic compounds and nitrogen oxides. Several advanced techniques were deployed to measure methane emissions from two landfills in the Southeast Michigan ozone nonattainment area during the Michigan–Ontario Ozone Source Experiment (MOOSE). These techniques included mobile infrared cavity ringdown spectrometry, drone-mounted meteorological sensors and tunable diode laser spectrometry, estimation of total landfill emissions of methane based on flux plane measurements, and Gaussian plume inverse modeling of distributed methane emissions in the presence of complex landfill terrain. The total methane emissions measured at the two landfills were of the order of 500 kg/h, with an uncertainty of around 50%. The results indicate that both landfill active faces and leaking gas collection systems are important sources of methane emissions.

Olaguer, Eduardo P.↗
DOE OSTI2025

Photo-Induced Hydrogen Production from Formic Acid Using a Palladium Catalyst

Liquid organic hydrogen carriers (LOHCs) are recognized as promising sustainable hydrogen (H 2 ) carriers due to their high volumetric capacity and ability to store H 2 at ambient conditions, eliminating the need for energy-intensive liquefaction or compression processes associated with H 2 or ammonia gas. One of the main current drawbacks, however, is LOHCs’ high energy demand for H 2 release. This work presents the photo-induced liberation of H 2 from formic acid (FA) as a liquid H 2 carrier, using visible light and well-established 5 wt% palladium nanoparticles supported over carbon (Pd/C). We show that low-power light-emitting diodes (LEDs) produced higher gas flow than their thermal baseline (35 °C), with 27.2 mL/min and 7.72 mL/min, respectively. Further, the rate of gas evolved with light intensity, catalyst loading, and the concentration of FA. Light-induced dehydrogenation shows similar deactivation as the known thermal mechanisms, such as the decreased Pd 2+ /Pd 0 ratio and Pd nanoparticle agglomeration. Hence, these observations suggest a photothermal mechanism, whereby the LED provides heat efficiently absorbed by the Pd/C catalyst and enhanced by Pd’s ability to absorb light, thereby driving the FA dehydrogenation reaction at ambient conditions.

08 HYDROGEN↗
DOE OSTI2024

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

Herath Mudiyanselage, Dinusha (ORCID:0000000186119↗
DOE OSTI2020

Laboratory Validation of Integrated Lighting Systems Retrofit Performance and Energy Savings

Light-emitting diodes (LED) fixtures and lamps have emerged as leading technologies for general illumination and are a well-established energy efficiency retrofit measure in commercial buildings (from around 2% of installed fixtures and lamps in 2013 to 28% by 2020). Retrofit approaches that integrate elements, such as networked controls, daylight dimming, and advanced shade technologies lag in comparison. Integrated retrofits have been shown to increase savings over single end-use retrofits, but are perceived as higher complexity and risk. More validation of integrated lighting system performance is needed. This study presents results from laboratory testing of three packages combining fixtures, networked controls, task tuning, and daylight dimming, advanced shades, and lighting layout changes. We characterize performance in perimeter open-office zones, finding energy savings from 20% for daylight dimming and automated shades (no LED retrofit) to over 70% for LED retrofits with advanced controls and shades or lighting layout changes. We present some implementation details, including lessons learned from installation and commissioning in the laboratory setting. We also discuss cost-benefit analysis approaches for the types of packages presented, including the need to quantify and incorporate energy and non-energy benefits for advanced shades packages, which enhance occupant comfort but add significant cost.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2025

Influence of Supplementary Blue and Far-Red Light on the Morphology and Texture of Ocimum basilicum L. Grown in Controlled Environments

Basil (Ocimum basilicum L.) is highly sensitive to environmental conditions and is an ideal candidate for cultivation in controlled environment agriculture (CEA). Light-emitting diode technology has become essential in CEA, offering precise control over light intensity, spectrum, and duration. This study investigated how supplemental blue light, far-red light, or their combination influences basil biomass, morphology, texture, and color when added to a white + red light spectrum. Basil ’Prospera’ and ’Amethyst’ were exposed to five light treatments for 14–28 days: white + red at 180 µmol∙m−2∙s−1 (W) as the control, and four treatments with an additional 60 µmol∙m−2∙s−1 of either white + red (+W60), blue (+B60), far-red (+FR60), or a combination of B and FR (+B30+FR30), for a total photon flux density of 240 µmol∙m−2∙s−1. The results demonstrated that +B60 and +W60 light treatments increased leaf thickness by 17–20% compared to the +FR60 treatment. Conversely, texture analysis revealed that +FR60-treated leaves had higher puncture resistance, with ’Amethyst’ and ’Prospera’ requiring 1.57 ± 0.43 N and 1.45 ± 0.35 N of force, respectively, compared to 1.19 ± 0.32 N and 1.1 ± 0.21 N under +B60. These findings suggest that tailored light recipes in CEA can optimize basil quality, allowing growers to modify traits like leaf color, thickness, and toughness.

Oehler, Madison A. (ORCID:0000000297919667)↗
DOE OSTI2020

Overview of CMOS Sensors for Future Tracking Detectors

Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Charge Transport Characteristics of Molecular Electronic Junctions Studied by Transition Voltage Spectroscopy

The field of molecular electronics is prompted by tremendous opportunities for using a single-molecule and molecular monolayers as active components in integrated circuits. Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been demonstrated. However, a full understanding of the crucial factors that affect charge transport through molecular electronic junctions should yet be accomplished. Remarkably, recent advances in transition voltage spectroscopy (TVS) elucidate that it can provide key quantities for probing the transport characteristics of the junctions, including, for example, the position of the frontier molecular orbital energy relative to the electrode Fermi level and the strength of the molecule–electrode interactions. These parameters are known to be highly associated with charge transport behaviors in molecular systems and can then be used in the design of molecule-based devices with rationally tuned electronic properties. This article highlights the fundamental principle of TVS and then demonstrates its major applications to study the charge transport properties of molecular electronic junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Vertical and Lateral Etch Survey of Ferroelectric AlN/Al 1-x Sc x N in Aqueous KOH Solutions

Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 1-x Sc x N) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al 1-x Sc x N with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al 0.875 Sc 0.125 N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the {$10\overline{11}$ planes and {$1\overline{1}00$ planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the {$\overline{1}2\overline{12}$ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Chemical Sensing and Chemoresponsive Pumping with Conical-Pore Polymeric Membranes

Synthetic membranes containing asymmetrically shaped pores have been shown to rectify the ionic current flowing through the membrane. Ion-current rectification means that such membranes produce nonlinear current–voltage curves analogous to those observed with solid-state diode rectifiers. In order to observe this ion-current rectification phenomenon, the asymmetrically shaped pores must have pore-wall surface charge. Pore-wall surface charge also allows for electroosmotic flow (EOF) to occur through the membrane. We have shown that, because ion-current is rectified, EOF is likewise rectified in such membranes. This means that flow through the membrane depends on the polarity of the voltage applied across the membrane, one polarity producing a higher, and the opposite producing a lower, flow rate. As is reviewed here, these ion-current and EOF rectification phenomena are being used to develop new sensing technologies. Results obtained from an ion-current-based sensor for hydrophobic cations are reviewed. In addition, ion-current and EOF rectification can be combined to make a new type of device—a chemoresponsive nanofluidic pump. This is a pump that either turns flow on or turns flow off, when a specific chemical species is detected. Results from a prototype Pb 2+ chemoresponsive pump are also reviewed here.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Selected Area Deposition of High Purity Gold for Functional 3D Architectures

Selected area deposition of high purity gold films onto nanoscale 3D architectures is highly desirable as gold is conductive, inert, plasmonically active, and can be functionalized with thiol chemistries, which are useful in many biological applications. Here, we show that high-purity gold coatings can be selectively grown with the Me 2 Au (acac) precursor onto nanoscale 3D architectures via a pulsed laser pyrolytic chemical vapor deposition process. The selected area of deposition is achieved due to the high thermal resistance of the nanoscale geometries. Focused electron beam induced deposits (FEBID) and carbon nanofibers are functionalized with gold coatings, and we demonstrate the effects that laser irradiance, pulse width, and precursor pressure have on the growth rate. Furthermore, we demonstrate selected area deposition with a feature-targeting resolutions of ~100 and 5 µm, using diode lasers coupled to a multimode (915 nm) and single mode (785 nm) fiber optic, respectively. The experimental results are rationalized via finite element thermal modeling.

3-dimensional nanostructures↗
DOE OSTI2024

Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure

Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

2D materials↗