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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

The Analog Front-end for the LGAD Based Precision Timing Application in CMS ETL

The analog front-end for the Low Gain Avalanche Detector (LGAD) based precision timing application in the CMS Endcap Timing Layer (ETL) has been prototyped in a 65 nm CMOS mini-ASIC named ETROC0. Serving as the very first prototype of ETL readout chip (ETROC), ETROC0 aims to study and demonstrate the performance of the analog frontend, with the goal to achieve 40 to 50 ps time resolution per hit with LGAD (therefore reach about 30ps per track with two detector-layer hits per track). ETROC0 consists of preamplifier and discriminator stages, which amplifies the LGAD signal and generates digital pulses containing time of arrival and time over threshold information. This paper will focus on the design considerations that lead to the ETROC front-end architecture choice, the key design features of the building blocks, the methodology of using the LGAD simulation data to evaluate and optimize the front-end design. The ETROC0 prototype chips have been extensively tested using charge injection and the measured performance agrees well with simulation. The initial beam test results are also presented, with time resolution of around 33 ps observed from the preamplifier waveform analysis and around 41 ps from the discriminator pulses analysis. A subset of ETROC0 chips have also been tested to a total ionizing dose of 100 MRad with X-ray and no performance degradation been observed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

A 20 Gbps Data Transmitting ASIC with PAM4 for Particle Physics Experiments

We present the design principle and test results of a data transmitting ASIC, GBS20, for particle physics experiments. The goal of GBS20 will be an ASIC that employs two serializers each from the 10.24 Gbps lpGBT SerDes, sharing the PLL also from lpGBT. A PAM4 encoder plus a VCSEL driver will be implemented in the same die to use the same clock system, eliminating the need of CDRs in the PAM4 encoder. This way the transmitter module, GBT20, developed using the GBS20 ASIC, will have the exact lpGBT data interface and transmission protocol, with an output up to 20.48 Gbps over one fiber. With PAM4 embedded FPGAs at the receiving end, GBT20 will halve the fibers needed in a system and better use the input bandwidth of the FPGA. A prototype, GBS20v0 is fabricated using a commercial 65 nm CMOS technology. This prototype has two serializers and a PAM4 encoder sharing the lpGBT PLL, but no user data input. An internal PRBS generator provides data to the serializers. GBS20v0 is tested barely up to 20.48 Gbps. With lessons learned from this prototype, we are designing the second prototype, GBS20v1, that will have 16 user data input channels each at 1.28 Gbps. We present the design concept of the GBS20 ASIC and the GBT20 module, the preliminary test results, and lessons learned from GBS20v0 and the design of GBS20v1 which will be not only a test chip but also a user chip with 16 input data channels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

In-Pixel Readout IC with compact in-pixel ADC for Pixel detectors at HL LHC

The prototype Smart Pixel concept test chip (SP28), designed in a CMOS 28 nm bulk process, is a proof of concept readout integrated circuit (ROIC) designed for a future Phase III High Luminosity upgrade of the Large Hadron Collider. It employs a synchronous analog to digital converter (ADC) for the front-end design, with signal processing and data conversion within a single bunch crossing of 25 ns. It is therefore capable of accurately detecting hits occurring in consecutive bunch crossings, without off-time registration of events and pileup insensitivity, making it particularly suitable for the inner most layers of the vertex detector. The ROIC consists of a matrix of 32 × 16 pixels, each 25 × 25 µm 2 in size. Each pixel contains a charge sensitive preamplifer with leakage current compensation, three auto-zero comparators for a 2-bit fash-type ADC. The total power consumption is approximately 5 µW per pixel. The measured noise at the output of all the hit comparators across the ROIC is < 90 e- with threshold dispersion < 45 e-RMS, which allows an in-time threshold setting of ≈ 475 e-.

Parpillon, Benjamin↗
DOE OSTI2022

Dual-mode oscillator for stress compensated cut resonator

Both parallel-type and serial-type dual-mode oscillators employing stress compensated cut resonators having various configurations are disclosed. Both classes of dual-mode oscillators employ multiple tank circuits to pass one frequency of the resonator and block the other frequency. The tank circuits isolate the operation of the two oscillator sub-circuits that form the dual-mode oscillator from one another. The dual-mode oscillators may be implemented with either bipolar or CMOS transistors. The parallel-type dual-mode oscillators employ inverters to provide gain. The serial-type dual-mode oscillators employ a two (or three) stage design including a follower circuit first stage and an inverting amplifier/limiter circuit second stage, with an optional intervening transimpedance amplifier stage.

Wessendorf, Kurt O.↗
DOE OSTI2023

The design and test results of A Giga-Bit Cable Receiver (GBCR) for the ATLAS Inner Tracker Pixel Detector

This paper presents the design and test results of a Gigabit Cable Receiver ASIC called GBCR for the HL-LHC upgrade of the ATLAS Inner Tracker (ITk) pixel detector. Three prototypes (GBCR1, GBCR2, and GBCR3) have been designed in the CERN-identified 65 nm CMOS technology. GBCR receives seven (GBCR2) or six (GBCR3) channels (RX) each at 1.28 Gbps from the front-end readout chip RD53B via flex cables up to 1 meter and Twinax cables up to 5 meters and sends the equalized and retimed signals to lpGBT. Both GBCR2 and GBCR3 ASICs have two transmitting channels (TX) that pre-emphasize the signals from lpGBT before sending them to RD53B through the same cables. No Single-Event Upset (SEU) is observed in any tested channels of GBCR2 in a 400 MeV proton beam. The extrapolated bit error rate for the future HL-LHC application is below 8*10^(-16), significantly below the specified BER criterion. GBCR3 is designed to improve the immunity to single-event-upset by applying the Triple Modular Redundancy (TMR) technology to all RX channels. The retimed signals from GBCR3 have less total jitter than those from GBCR2 (35 ps versus 79 ps). Each receiver channel of GBCR3 consumes 75% more power than that of GBCR2.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Metal stack templates for suppressing secondary grains in sca1n

A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

Esteves, Giovanni↗
DOE OSTI2023

Multifunctional RF limiting amplifier

Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.

Wessendorf, Kurt O.↗
DOE OSTI2023

Tunable doping of carbon nanotubes through engineered atomic layer deposition

A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfOX, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

Source record↗
DOE OSTI2024

Smart Pixels: In-pixel AI for on-sensor data filtering

We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as proof-of-principle for a Phase III upgrade at the Large Hadron Collider (LHC) pixel detector. The first version of the ROIC consists of two matrices of 256 smart pixels, each 25$\times$25 $\mu$m$^2$ in size. Each pixel consists of a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. The frontend is capable of synchronously digitizing the sensor charge within 25 ns. Measurement results show an equivalent noise charge (ENC) of $\sim$30e$^-$ and a total dispersion of $\sim$100e$^-$ The second version of the ROIC uses a fully connected two-layer neural network (NN) to process information from a cluster of 256 pixels to determine if the pattern corresponds to highly desirable high-momentum particle tracks for selection and readout. The digital NN is embedded in-between analog signal processing regions of the 256 pixels without increasing the pixel size and is implemented as fully combinatorial digital logic to minimize power consumption and eliminate clock distribution, and is active only in the presence of an input signal. The total power consumption of the neural network is $\sim$ 300 $\mu$W. The NN performs momentum classification based on the generated cluster patterns and even with a modest momentum threshold, it is capable of 54.4% - 75.4% total data rejection, opening the possibility of using the pixel information at 40MHz for the trigger. The total power consumption of analog and digital functions per pixel is $\sim$ 6 $\mu$W per pixel, which corresponds to $\sim$ 1 W/cm$^2$ staying within the experimental constraints.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Extending Power of Nature from Binary Problems to Real-Valued Graph Learning in Real World

Nature performs complex computations constantly at clearly lower cost and higher performance than digital computers. It is crucial to understand how to harness the unique computational power of nature in Machine Learning (ML). In the past decade, besides the development of Neural Networks (NNs), the community has also relentlessly explored nature-powered ML paradigms. Although most of them are still predominantly theoretical, a new practical paradigm enabled by the recent advent of CMOS-compatible room-temperature nature-based computers has emerged. By harnessing the nature's power of entropy increase, this paradigm can solve binary learning problems delivering immense speedup and energy savings compared with NNs, while maintaining comparable accuracy. Regrettably, its values to the real world are highly constrained by its binary nature. A clear pathway to its extension to real-valued problems remains elusive. This paper aims to unleash this pathway by proposing a novel end-to-end Nature-Powered Graph Learning (NP-GL) framework. Specifically, through a three-dimensional co-design, NP-GL can leverage the nature's power of entropy increase to efficiently solve real-valued graph learning problems. Experimental results across 4 real-world applications with 6 datasets demonstrate that NP-GL delivers, on average, 6970X speedup and 10^5x energy consumption reduction with comparable or even higher accuracy than Graph Neural Networks (GNNs).

artificial intelligence↗
DOE OSTI2024

Monolithic integration of optical waveguides with metal routing layers

A photonic integrated circuit and a method for its manufacture are provided. In an embodiment, an intermetal dielectric layer, for example, a silicon oxide layer, is contiguous between an upper metal layer and a lower metal layer on a substrate. One or more waveguides having top and bottom faces are formed in respective waveguide layers within the intermetal dielectric layer between the upper and lower metal layers. There is a distance of at least 600 nm from the upper metal layer to the top face of the uppermost of the several waveguides. There is a distance of at least 600 nm from the lower metal layer to the bottom face of the lowermost of the several waveguides. The waveguides are formed of silicon nitride for longer wavelengths and alumina for shorter wavelengths. These dimensions and materials are favorable for CMOS processing, among other things.

Gehl, Michael↗
DOE OSTI2025

ChemComp: Compiling and Computing with Chemical Reaction Networks

The exponential growth in computing demands driven by scientific computing, data analytics, and artificial intelligence is pushing conventional CMOS-based high-performance computing systems to their physical and energy efficiency limits. As we approach the era of post-exascale computing, disruptive approaches are necessary to overcome these barriers and achieve substantial gains in energy efficiency. Analog and hybrid digital-analog computing systems have emerged as promising alternatives, offering the potential for orders-of-magnitude improvements in efficiency. Among these, biochemical computing stands out as a novel paradigm capable of leveraging the natural efficiency of chemical reactions, which have shown promise in solving optimization problems by converging to steady states. By scaling up reaction networks or reaction vessel sizes, biochemical systems present an opportunity to meet the high-performance demands of modern computing tasks. Despite their promise, significant theoretical and practical challenges remain, particularly in formulating and mapping computational problems to chemical reaction networks (CRNs) and designing viable biochemical computing devices. This paper addresses these challenges by introducing new ideas to ChemComp, a compilation and emulation framework for chemical computation. This work describes the mechanisms through which solutions to ordinary differential equations (ODEs) that can be represented as CRN systems can be achieved. Furthermore, we explain the design principles of an ODE dialect implemented as a multi-level intermediate representation (MLIR) compiler extension that will be coupled with existing infrastructure. We demonstrate the potential of our framework through a case study emulating a simplified chemical reservoir computing device. This work establishes foundational tools and methodologies necessary to harness the computational power of chemistry, paving the way for the development of energy-efficient, high-performance computing systems tailored to contemporary and future computational needs.

Bohm Agostini, Nicolas↗
DOE OSTI2025

In-pixel integration of signal processing and AI/ML based data filtering for particle tracking detectors

We present the first physical realization of in-pixel signal processing with integrated AI-based data filtering for particle tracking detectors. Building on prior work that demonstrated a physics-motivated edge-AI algorithm suitable for ASIC implementation, this work marks a significant milestone toward intelligent silicon trackers. Our prototype readout chip performs real-time data reduction at the sensor level while meeting stringent requirements on power, area, and latency. The chip is taped-out in 28nm TSMC CMOS bulk process, which has been shown to have sufficient radiation hardness for particle experiments. This development represents a key step toward enabling fully on-detector edge AI, with broad implications for data throughput and discovery potential in high-rate, high-radiation environments such as the High-Luminosity LHC.

Parpillon, Benjamin [Fermilab; Illinois U., Chicag↗
DOE OSTI2025

DS-TIDE: Harnessing Dynamical Systems for Efficient Time-Independent Differential Equation Solving

Time-Independent Differential Equations (TIDEs) are central to modeling equilibrium behavior across a wide range of scientific and engineering domains, from electrostatics to porous media flow. Conventional numerical solvers offer reliable solutions but incur significant computational costs due to fine-grained discretization and iterative procedures. Machine learning-based approaches address this by replacing iterative solving processes with one-time inference; however, their sophisticated models require extensive training resources that often exceed those of traditional solvers. Consequently, designing a TIDE solver that achieves high accuracy, broad applicability, and exceptional computational efficiency remains a fundamental challenge. In this paper, we propose DS-TIDE, a novel hardware solver that is inspired by, and subsequently leverages, the intrinsic connection between Dynamical Systems (DS) and Differential Equations (DEs) to efficiently and accurately solve TIDEs. DS-TIDE employs a CMOS-compatible DS-based processor, whose physical states evolve under carefully designed DE-driven dynamics and naturally converge to equilibrium -- the solution of the target TIDE -- within ~1µs on a ~1-watt DS-TIDE processor. To enhance expressivity, DS-TIDE incorporates Heterogeneous Dynamics with Temporal Layering (HDTL), which solves TIDEs through a three-stage DS evolution -- conditioning, solving, and decoding -- each governed by specialized dynamics. The entire evolution process is analogous to an infinitely deep neural network temporally unrolled, offering the system the capability of representing complex equations. Furthermore, DS-TIDE is equipped with an on-device DS-DE Auto-Alignment mechanism that dynamically adapts intrinsic hardware dynamics within milliseconds, effectively aligning the system’s dynamics to diverse target DEs. Experimental results across TIDEs from a wide range of scientific and engineering domains demonstrate that DS-TIDE achieves ~10^3× speedup, ~10^5× energy savings, and competitive or superior accuracy compared to state-of-the-art numerical and ML-based solvers.

Liu, Chuan↗
DOE OSTI2026

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗
DOE OSTI2026

Design and Testing of the Endcap Concentrator ASICs for the CMS High-Granularity Calorimeter Upgrade

A major upgrade of the High-Granularity Calorimeter (HGCAL) in the CMS detector is planned for Long-Shutdown 3 (LS3), currently expected to start in 2026. This upgrade will contain over 6 million channels and the electronics will be required to be low power and to withstand a radiation environment with a High-Energy Hadron flux of 3x10**6 particles per square centimeter per second. The solution to this significant challenge is the two Endcap Concentrator (ECON) ASICs, ECON-T and ECON-D, working in tandem with the HGCROC front-end ASIC. The two ECON ASICs provide critical on-detector data reduction for both the 40 MHz trigger path (ECON-T) and 750 kHz data acquisition path (ECON-D) of the HGCAL. The ASICs are fabricated in 65nm CMOS. They are rad-tolerant to 600 Mrad with low power consumption (<2.5 mW/channel). This presentation will be a comprehensive description of each ECON design, including the infrastructure that they share as well as the elements that make each unique. The presentation will also include functionality and radiation tests for both ASICs, and the first high statistics characterization results from the full production of 75k ECON-D and ECON-T ASICs.

Hoff, James R. [Fermilab] (ORCID:0000000163514592)↗
DOE OSTI2026

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗