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Recent progress in characterization of the core–shell structure of black titania

The recent observation of spectacular photocatalytic activity enhancements generated tremendous interest in the synthesis, properties, and potential applications of black titania. Most black titania are core-shell structures consisting of a perfect crystalline core surrounded by a defective surface shell. Because the properties are attributed to the defective shell it is particularly critical, but very challenging to obtain atomic structure information of the core, the shell, and the core-shell relationship on a single particle level. While the role of various synthesis approaches for producing black titania with different properties has been extensively reviewed, this review focuses on understanding the structure-functionality relationship in black titania on a single particle level. We begin by introducing the crystal and electronic band structure of different TiO 2 phases, followed by discussion of particle size effects, the origin of lattice distortions, and phase control by synthesis, and concluding with discussion of crystalline order formation and evolution creating the defective shell.

36 MATERIALS SCIENCE↗

Magic-angle semimetals with chiral symmetry

Here, we construct and solve a two-dimensional, chirally symmetric model of Dirac cones subjected to a quasiperiodic modulation. In real space, this is realized with a quasiperiodic hopping term. This hopping model, as we show, at the Dirac node energy has a rich phase diagram with a semimetal-to-metal phase transition at intermediate amplitude of the quasiperiodic modulation, and a transition to a phase with a diverging density of states (DOS) and subdiffusive transport when the quasiperiodic hopping is strongest. We further demonstrate that the semimetal-to-metal phase transition can be characterized by the multifractal structure of eigenstates in momentum space and can be considered as a unique “unfreezing” transition. This unfreezing transition in momentum space generates flat bands with a dramatically renormalized bandwidth in the metallic phase similar to the phenomena of the band structure of twisted bilayer graphene at the magic angle. We characterize the nature of this transition numerically as well as analytically in terms of the formation of a band of topological zero modes. For pure quasiperiodic hopping, we provide strong numerical evidence that the low-energy DOS develops a divergence and the eigenstates exhibit Chalker (quantum-critical) scaling despite the model not being random. At particular commensurate limits the model realizes higher-order topological insulating phases. We discuss how these systems can be realized in experiments on ultracold atoms and metamaterials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe 3 GaTe 2

Fe 3 GaTe 2 , a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($T$ C ). In this study, we reveal the electronic structure of Fe 3 GaTe 2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($J$ ex ) and magnetic anisotropy energy to the development of the high-$T$ C ferromagnetic ordering in Fe 3 GaTe 2 . Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. In conclusion, these findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$T$ C ferromagnetic ordering in Fe 3 GaTe 2 .

36 MATERIALS SCIENCE↗

Structural and electronic properties of thallium compounds

The tight binding linear muffin-tin-orbital (TB-LMTO) method within the local density approximation (LDA has been used to calculate structural and electronic properties of thallium pnictides TlX (X=Sb, Bi) at high pressure. As a function of volume, the total energy is evaluated. Apart from this, the lattice parameter (a{sub 0}), bulk modulus (B{sub 0}), band structure (BS) and density of states (DOS) are calculated. From energy band diagram we observed metallic behaviour in TlSb and TlBi compounds. The values of equilibrium lattice constants and bulk modulus are agreed well with the available data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electronically- and crystal-structure-driven magnetic structures and physical properties of RScSb (R = rare earth) compounds. A neutron diffraction, magnetization and heat capacity study

The synthesis of the new equiatomic RScSb ( R = La-Nd, Sm, Gd-Tm, Lu, Y) compounds has been recently reported. These rare earth compounds crystallize in two different crystal structures, adopting the CeScSi-type ( I 4/ mmm) for the lighter R (La-Nd, Sm) and the CeFeSi-type (P4 /nmm) structure for the heavier R ( R = Gd-Tm, Lu, Y). Here we report the results of neutron diffraction, magnetization and heat capacity measurements on some of these compounds ( R = Ce, Pr, Nd, Gd and Tb). Band structure calculations have also been performed on CeScSb and GdScGe (CeScSi-type), and on GdScSb and TbScSb (CeFeSi-type) to compare and understand the exchange interactions in CeScSi and CeFeSi structure types. The neutron diffraction investigation shows that all five compounds order magnetically, with the highest transition temperature of 66 K in TbScSb and the lowest of about 9 K in CeScSb. The magnetic ground state is simple ferromagnetic (τ = [0 0 0]) in CeScSb, as well in NdScSb for 32 >T > 22 K. Below 22 K a second magnetic transition, with propagation vector τ = [¼ ¼ 0], appears in NdScSb. PrScSb has a magnetic structure within, determined by mostly ferromagnetic interactions and antiferromagnetic alignment of the Pr-sites connected through the I-centering ( τ = [1 0 0]). A cycloidal spiral structure with a temperature dependent propagation vector τ = [δ δ ½] is found in TbScSb. The results of magnetization and heat capacity lend support to the main conclusions derived from neutron diffraction. As inferred from a sharp peak in magnetization, GdScSb orders antiferromagnetically at 56 K. First principles calculations show lateral shift of spin split bands towards lower energy from the Fermi level as the CeScSi-type structure changes to the CeFeSi-type structure. This rigid shift may force the system to transform from exchange split ferromagnetic state to the antiferromagnetic state in RScSb compounds (as seen for example in GdScSb and TbScSb) and is proposed to explain the change-over from a ferromagnetic structure as found in the CeScSi-type compounds CeScSb and NdScSb to the antiferromagnetic state as found in TbScSb and GdScSb.

36 MATERIALS SCIENCE↗

Computational and Experimental Investigation of Chiral and Achiral Two‐Dimensional Organic Lead Bromide Perovskites: Octahedral Distortions and Electronic and Optical Properties

A computational investigation is presented, in conjunction with synthesis and experimental characterization, into the structural, electronic, and optical properties of layered two-dimensional organic lead bromide perovskites. Materials based on the chiral (R/S)-4-fluoro-α-methylbenzylammonium (R/S-FMBA), which have been shown to lead to bright room-temperature circularly polarized luminescence, are contrasted with the similar achiral 4-fluorobenzylammonium (FBA). Using density functional theory (DFT) with van der Waals (vdW) corrections, relaxed structures (compared with X-ray diffraction, XRD) and optical absorption spectra (compared with experiments) are studied, as well as band structure and orbital character of transitions. A Python code is developed and provided to calculate octahedral distortions and compare DFT and XRD results, finding that vdW corrections are important for accuracy and that DFT overestimates octahedral tilt angles. (FMBA) 2 PbBr 4 shows among the largest tilt angle differences (often termed Δ β ) reported, 14°–15°, indicating strong inversion symmetry-breaking, which enables its chiral emission. A large resulting Dresselhaus spin-splitting effect is found. The lowest-energy optical transitions involve the perovskite only and are polarized within the layer. This work furthers understanding of structure-property relations with applications to optoelectronics and spintronics.

UV/vis spectroscopy↗

Cage disorder and gas encapsulation as routes to tailor properties of inorganic clathrates

Inorganic clathrates with the type II crystal structure are of interest as potential materials for high temperature thermoelectric applications. In this study we present ab initio calculations for the electronic and phonon properties of several Sn type II clathrate compositions with partial Ga substitution on the framework, empty cage Sn 136 , and compounds of Sn 136 filled with inert Xe atoms. It is found that cage disorder due to atomic substitution and guest encapsulation affect the fundamental characteristics of these materials in profound ways. We determine that the stability of these materials is enhanced by the presence of guests and lack of direct Ga-Ga bonds in disordered clathrates. Inert Xe atoms provide a unique opportunity to preserve the overall electronic structure of Sn 136 and take advantage of the loosely bound guest rattling for enhanced phonon scattering. The calculated energy bands and density of states, as well as phonon band structure and mode Gruneisen parameter, enable further analysis of type II Sn clathrates and reveal interesting structure-property relations.

36 MATERIALS SCIENCE↗

In-situ angle-resolved photoemission spectroscopy of copper-oxide thin films synthesized by molecular beam epitaxy

We present that angle-resolved photoemission spectroscopy (ARPES) is the key momentum-resolved technique for direct probing of the electronic structure of a material. However, since it is highly surface-sensitive, it has been applied to a relatively small set of complex oxides that can be easily cleaved in ultra-high vacuum. Here we describe a new multi-module system at Brookhaven National Laboratory (BNL) in which an oxide molecular beam epitaxy (OMBE) is interconnected with an ARPES and a spectroscopic-imaging scanning tunneling microscopy (SI-STM) module. This new capability largely expands the range of complex-oxide materials and artificial heterostructures accessible to these two most powerful and complementary techniques for studies of electronic structure of materials. Lastly, we also present the first experimental results obtained using this system — the ARPES studies of electronic band structure of a La 2-x Sr x CuO 4 (LSCO) thin film grown by OMBE.

36 MATERIALS SCIENCE↗

Characterization of nanocrystallised multilayered metallic materials produced by the SMAT followed by constrained compression

Highlights: • Nanocrystallised multilayered metallic material was produced by novel technique. • Bonding between nanocrystallised plates was achieved by constrained compression. • The metal-metal bonding occurred between fragmented oxide layers. • A high degree of structural inhomogeneity was observed near bonded regions. - Abstract: Nanocrystallised multilayered metallic material was obtained via duplex technique combining the surface mechanical attrition treatment (SMAT) with a novel constrained compression (CC) process. At the initial stage the 1 mm thick sheets of 316L austenitic stainless steel were processed by the SMAT in order to form a nanocrystalline structure. At the final stage disc-shaped plates excised from SMATed sheets, were assembled in a package and compressed in order to produce metallurgical bonding between individual plates. The characterization of such a multilayered structure was studied both experimentally and numerically. The microscopic examination revealed that the bonding occurred in the central portions of the package where the oxide scale covering each plate was fragmented by high shear strains. The numerical analysis confirmed that the strains at the interior interfaces are significantly higher than at the external ones. A high degree of structural inhomogeneity was observed via TEM studies in the regions where the successful bonding was achieved. Regions characterised by fine band structure with the presence of α′-martensite phase as well as coarse cellular structure within a single γ-austenite phase were identified.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ion Size Effects on the Thermodynamic, Kinetic, and Mechanical Properties during Ion Exchange in Solid-State Electrolytes

Ion exchange offers a pathway to impose residual compressive stresses to mitigate the electro-chemo-mechanical cracking of solid-state electrolytes such as lithium lanthanum zirconium oxide. This study uses a coupled multiscale framework (integrating density functional theory (DFT), molecular dynamics (MD), and continuum modeling) to examine how exchange ion size influences stress, diffusion, fracture toughness, and electronic properties. Larger isovalent ions (Na + , Ag + , K + ) were exchanged with Li + , with DFT confirming their preference for octahedral 96h sites and a linear relationship between ion size and chemical free expansion coefficient. MD simulations reveal stress and concentration effects on exchange ion diffusivity at elevated temperatures, with Na + and Ag + maintaining favorable mobility while K + showing concentration-dependent clustering. Continuum modeling predicts the range of fracture strength improvements and the required ion exchange concentration profile. It was shown that a 5% surface exchange concentration can induce ∼0.6 GPa of surface compressive stress using Na + and ∼1.0 GPa of surface compressive stress using Ag + . On the other hand, larger ion exchange species may penalize Li + diffusivity by increasing the activation volume and activation energy. Interestingly, Na + has a negligible penalty on Li-ion diffusivity. The room temperature Li + ion diffusivity is reduced by ∼40% with Ag + ion exchange. Electronic band structure analysis shows no size-dependent change in the bandgap, though Ag + introduces localized defect states near the valence band maximum. This study highlights ion size as a key factor in optimizing LLZO properties, offering a framework to improve the solid-state battery performance.

Jagad, Harsh D. [Brown Univ., Providence, RI (Unit↗

From Three-Dimensional Clathrates to Two-Dimensional Zintl Phases AMSb 2 (A = Rb, Cs; M = Ga, In) Composed of Pentagonal M–Sb Rings

Three new antimonide Zintl phases, RbGaSb 2 , CsGaSb 2 , and CsInSb 2 , were discovered during exploration of corresponding A–M–Sb (A = Rb, Cs; M = Ga, In) ternary systems while searching for new clathrates. The AGaSb 2 phases crystallize in the tetragonal space group P4 2 /nmc (No. 137) in the LiBS 2 structure type, while CsInSb 2 crystallizes in lower symmetry in the orthorhombic space group Cmce (No. 64) in the KGaSb 2 structure type with additional disorder of one of the Cs sites. The crystal structures of all three reported AMSb 2 compounds are composed of two-dimensional [MSb 2 ] – tetrahedral layers separated by Rb + or Cs + cations. [MSb 2 ] – layers are built from fused M–Sb pentagons and hexagons, which are also the main structural units for A 8 M 27 Sb 19 clathrate cages. The semiconductor nature of AMSb 2 was suggested by band structure calculations and confirmed by transport property characterization. CsGaSb 2 is a rare example of an n-type pnictide Zintl phase. Finally, all reported compounds exhibit low thermal conductivity typical for complex antimonides of heavy elements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dielectric collapse at the LaAlO 3 /SrTiO 3 (001) heterointerface under applied electric field

The fascinating interfacial transport properties at the LaAlO 3 /SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3 /SrTiO 3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

36 MATERIALS SCIENCE↗

Theoretical study on the role of dynamics on the unusual magnetic properties in MnBi

Here we study the electronic structure and lattice dynamics in the ferromagnet MnBi using first-principles calculations and a tight-binding model. The band structure around the Fermi level is dominated by Bi-p states which are the primary contributors to the magnetic anisotropy energy in the low temperature structure. A tight-binding model consisting of Mn-d and Bi-p states is developed and the parameters are determined from first-principles calculations. Phonon dispersions and elastic moduli exhibit several interesting features. In conclusion, the results imply that the magnetic interaction with the crystal lattice in MnBi is considerably more complex than previously thought and in particular that there is a rich interplay between phonons and magnetism involving both magnetoelastic and magnetostrictive coupling.

36 MATERIALS SCIENCE↗

Hidden Order and Dimensional Crossover of the Charge Density Waves in TiSe 2

Charge density wave (CDW) formation, a key physics issue for materials, arises from interactions among electrons and phonons that can also lead to superconductivity and other competing or entangled phases. The prototypical system TiSe 2 , with a particularly simple (2 × 2 × 2) transition and no Kohn anomalies caused by electron-phonon coupling, is a fascinating but unsolved case after decades of research. Our angle-resolved photoemission measurements of the band structure as a function of temperature, aided by first-principles calculations, reveal a hitherto undetected but crucial feature: a (2 × 2) electronic order in each layer sets in at ~232 K before the widely recognized three-dimensional structural order at ~205 K. The dimensional crossover, likely a generic feature of such layered materials, involves renormalization of different band gaps in two stages.

36 MATERIALS SCIENCE↗

Dynamical thermoelectric coefficients of bulk semiconductor crystals: Towards high thermoelectric efficiency at high frequencies

We investigate in this work the fundamental behavior of the dynamical thermoelectric coefficients of a bulk cubic semiconductor (SC) crystal. The treatment is based on solving Boltzmann electron transport equation in the frequency domain after simultaneous excitations by dynamical temperature and electric potential gradients, within the framework of the single relaxation time approximation. The SC crystal is assumed to be a linear, elastic homogenous, and isotropic medium having a parabolic energy band structure. We further assume to deal with one type of carriers (electrons or holes) that reside in a single energy band, and we neglect any phonon drag effect. Our approach allows us to obtain very compact expressions for the different dynamical thermoelectric coefficients that nicely capture the essential features of the dynamics of electron transport. We emphasize our study about the dynamical behavior of the thermoelectric figure of merit ZT(Ω) of the SC crystal by considering the coupled electron-phonon transport. Our study revealed a very interesting and compelling result in which ZT increases in the high frequency regime with respect to its steady-state value. The fundamental reason of this enhancement is due to the intrinsic uncoupling in the dynamics of electrons and phonons in the high frequency regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗