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At least 1,099 records · Page 61

Structural evolution of amorphous calcium sulfate nanoparticles into crystalline gypsum phase

The involvement of amorphous calcium sulfate (ACS) as a precursor to calcium sulfate crystallization remains an important but poorly understood phenomenon, especially the mechanism by which ACS evolves into crystalline phase. In this study, we captured the ACS nanoparticles as a precursor to calcium sulfate crystallization in a concentrated CaCl 2 solution at 90 °C and observed several stages of its evolution. The ACS nanoparticles grew by simultaneous fusion and internal structural evolution. Aggregation of the ACS nanoparticles gave birth to bulk ACS particles within which nanocrystalline domains sprouted and developed into crystalline gypsum. This work deepens the understanding of the evolution of ACS nanoparticles and its role in multistage crystallization of calcium sulfate.

36 MATERIALS SCIENCE↗

Failure modes of protection layers produced by atomic layer deposition of amorphous TiO 2 on GaAs anodes

Amorphous titanium dioxide (a-TiO 2 ) films formed by atomic layer deposition can serve as protective coatings for semiconducting photoanodes in water-splitting cells using strongly alkaline aqueous electrolytes. Herein, we experimentally examine the mechanisms of failure for p + -GaAs anodes coated with a-TiO 2 films (GaAs/a-TiO 2 ). Galvanic displacement of exposed GaAs by Au allowed imaging of pinholes in the a-TiO 2 coatings, and enabled collection of quantitative and statistical data associated with pinhole defects. A combination of imaging, electrochemical measurements, and quantitative analyses of corrosion products indicated that extrinsic pinholes were present in the a-TiO 2 films before electrochemical operation. During electrochemical operation these pinholes led to pitting corrosion of the underlying GaAs substrate. The dominant source of pinholes was the presence of atmospheric particulate matter on the GaAs surface during deposition of the a-TiO 2 layer. The pinhole density decreased substantially when the thickness of the a-TiO 2 coating increased beyond 45 nm, and approached zero when the thickness of the film exceeded 112 nm. The density of pinholes in films thinner than 45 nm decreased when the a-TiO 2 coating was deposited in an environmentally controlled cleanroom. Pinhole-free GaAs/a-TiO 2 devices were also tested via chronoamperometry to quantify the rate of pinhole formation during electrochemistry. The time-to-failure increased with thickness, suggesting that the failure mechanism may involve diffusion or migration through the film. However, other mechanisms may also contribute to the degradation of thicker films (>112 nm). Nevertheless, as previously hypothesized, extrinsic pinhole defects formed during deposition and testing control the short-term protective performance of the a-TiO 2 film for GaAs anodes evolving O 2 from water.

25 ENERGY STORAGE↗

Understanding, quantifying, and controlling the molecular ordering of semiconducting polymers: from novices to experts and amorphous to perfect crystals

Molecular packing and texture of semiconducting polymers are often critical to the performance of devices using these materials. Although frameworks exist to quantify the ordering, interpretations are often just qualitative, resulting in imprecise use of terminology. Here, we reemphasize the significance of quantifying molecular ordering in terms of degree of crystallinity (volume fractions that are ordered) and quality of ordering and their relation to the size scale of an ordered region. We are motivated in part by our own imprecise and inconsistent use of terminology in the past, as well as the need to have a primer or tutorial reference to teach new group members. We strive to develop and use consistent terminology with regards to crystallinity, semicrystallinity, paracrystallinity, and related characteristics. To account for vastly different quality of ordering along different directions, we classify paracrystals into 2D and 3D paracrystals and use paracrystallite to describe the spatial extent of molecular ordering in 1–10 nm. We show that a deeper understanding of molecular ordering can be achieved by combining grazing-incidence wide-angle X-ray scattering and differential scanning calorimetry, even though not all aspects of these measurements are consistent, and some classification appears to be method dependent. We classify a broad range of representative polymers under common processing conditions into five categories based on the quantitative analysis of the paracrystalline disorder parameter (g) and thermal transitions. A small database is presented for 13 representative conjugated and insulating polymers ranging from amorphous to semi-paracrystalline. Lastly, we outline the challenges to rationally design more perfect polymer crystals and propose a new molecular design approach that envisions conceptual molecular grafting that is akin to strained and unstrained hetero-epitaxy in classic (compound) semiconductors thin film growth.

36 MATERIALS SCIENCE↗

Understanding methanol dissociative adsorption and oxidation on amorphous oxide films

Interactions between a transition metal (oxide) catalyst and a support can tailor the number and nature of active sites, for instance in the methanol oxidation reaction.In this report we use ambient pressure X-ray photoelectron spectroscopy (AP-XPS) to identify and compare the surface adsorbates that form on amorphous metal oxide films that maximize such interactions. Considering Al (1−x) M x O y (M = Fe or Mn) films at a range of methanol : oxygen gas ratios and temperatures, we find that the redox-active transition metal site (characterized by methoxy formation) dominates dissociative methanol adsorption, while basic oxygen sites (characterized by carbonate formation) play a lesser role. Product detection, however, indicates complete oxidation to carbon dioxide and water with partial oxidation products (dimethyl ether) comprising a minor species. Comparing the intensity of methoxy and hydroxyl features at a fixed XPS chemical shift suggests methanol deprotonation during adsorption in oxygen rich conditions for high transition metal content. However, increasing methanol partial pressure and lower metal site density may promote oxygen vacancy formation and the dehydroxylation pathway, supported by a nominal reduction in the oxidation state of iron sites. These findings illustrate that AP-XPS and mass spectrometry together are powerful tools in understanding metal–support interactions, quantifying and probing the nature of catalytic active sites, and considering the link between electronic structure of materials and their catalytic activity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Experimentally informed structure optimization of amorphous TiO 2 films grown by atomic layer deposition

Amorphous titanium dioxide TiO 2 (a-TiO 2 ) has been widely studied, particularly as a protective coating layer on semiconductors to prevent corrosion and promote electron–hole conduction in photoelectrochemical reactions. The stability and longevity of a-TiO 2 is strongly affected by the thickness and structural heterogeneity, implying that understanding the structure properties of a-TiO 2 is crucial for improving the performance. This study characterized the structural and electronic properties of a-TiO 2 thin films (~17 nm) grown on Si by atomic layer deposition (ALD). Fluctuation spectra V(k) and angular correlation functions were determined with 4-dimensional scanning transmission electron microscopy (4D-STEM), which revealed the distinctive medium-range ordering in the a-TiO 2 film. A realistic atomic model of a-TiO 2 was established guided by the medium-range ordering and the previously reported short-range ordering of a-TiO 2 film, as well as the interatomic potential. The structure was optimized by the StructOpt code using a genetic algorithm that simultaneously minimizes energy and maximizes the match to experimental short- and medium-range ordering. The StructOpt a-TiO 2 model presents improved agreements with the medium-range ordering and the k-space location of the dominant 2-fold angular correlations compared with a traditional melt-quenched model. The electronic structure of the StructOpt a-TiO 2 model was studied by ab initio calculations and compared to the crystalline phases and experimental results. Finally, this work uncovered the medium-range ordering in a-TiO 2 thin films and provided a realistic a-TiO 2 structure model for further investigation of structure–property relationships and materials design. In addition, the improved multi-objective optimization package StructOpt was provided for structure determination of complex materials guided by experiments and simulations.

36 MATERIALS SCIENCE↗

Are the Brønsted acid sites in amorphous silica-alumina bridging?

Competing models exist to explain the differences in the activity of zeolites and amorphous silica–aluminas. Some postulate that silica–alumina contains dilute zeolitic bridging acid sites, while others favor a pseudo-bridging silanol model. Here, we employed a selective isotope labeling strategy to assess the existence of Si–O(H)–Al bonds using NMR-based distance measurements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Correlation of photothermal conversion on the photo-induced deformation of amorphous carbon nitride films prepared by reactive sputtering

The photo-induced deformation of hydrogen-free amorphous carbon nitride (a-CN{sub x}) films was investigated under visible-light illumination. The films gave rise to photothermal conversion by irradiation. In this study, we investigated the effects of thermal energy generated by irradiation on the deformation of a-CN{sub x}/ultrathin substrate bimorph specimens. The films were prepared on both ultrathin Si and SiO{sub 2} substrates by reactive radio-frequency magnetron sputtering from a graphite target in the presence of pure nitrogen gas. The temperature of the film on the SiO{sub 2} substrate increased as the optical band-gap of the a-CN{sub x} was decreased. For the film on Si, the temperature remained constant. The deformation degree of the films on Si and SiO{sub 2} substrates were approximately the same. Thus, the deformation of a-CN{sub x} films primarily induced by photon energy directly.

36 MATERIALS SCIENCE↗

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

36 MATERIALS SCIENCE↗

Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band

This study provides conclusive evidence of room temperature ferromagnetism in Co-doped amorphous carbon (a-C) composites from the spin polarized semiconductor band. These composites are constructed from discontinuous [Co(3 nm)/a-C(d{sub c} nm)]{sub 5} multilayers with d{sub c} = 3 nm and d{sub c} = 6 nm. Only remnant circular dichroism (CD) was observed from the d{sub c} = 3 nm sample but not when d{sub c} = 6 nm. In addition, the remnant CD peaks at 5.5 eV, which is comparable with the absorption peak associated with the C σ-σ* gap transition. We suggest that the possible mechanism for this coupling can be considered as a magnetic proximity effect in which a ferromagnetic moment in the C medium is induced by Co/C interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications

Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

36 MATERIALS SCIENCE↗

Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

The effect of an ambient atmosphere with a positive bias constant current stress (CCS) and a negative bias illumination stress (NBIS) on the stability of amorphous In-Ga-Zn-O thin film transistors (TFTs) is examined by utilizing a glass-hermetic-sealant with a moisture permeability of less than 10{sup −6} g/m{sup 2} · day. In the CCS test, the threshold voltage shift (ΔV{sub th}) was remarkably suppressed in the glass-sealed TFTs. The unsealed and resin-sealed TFTs exhibited large ΔV{sub th} values. During the NBIS tests, the glass-sealed TFTs had almost the same negative ΔV{sub th} as the unsealed and resin sealed TFTs. Among the different TFTs, no significant differences were observed in the threshold voltage, the subthreshold swing and the saturation mobility as a function of the photon energy. It is concluded that ambient molecules were the primary origin of the instability of the ΔV{sub th}, induced by a CCS, but they were not related to the NBIS instability. The major role of the effective passivation layers in the NBIS test was not to simply block out the ambient effects, but to reduce the extra density of states at/near the surface of the back channel.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗