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Multimodal synchrotron analysis uncovers how Co, Mn, and Al dopants mitigate degradation and reinforce structural integrity in LiNiO 2 cathodes.
We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW (<1 μW cm−2) illumination with very low dark currents <0.1 pA at room temperature under ambient light. The high gain in large area AlGaN APDs is attributed to a high breakdown voltage at 340 V, corresponding to very high breakdown fields ∼9 MV cm−1 as a consequence of low threading and screw dislocation densities < 103 cm−2. The maximum charge collection efficiency of 30% was determined at 255 nm, corresponding to the bandgap of Al0.65Ga0.35N, with a response of 0.06 A/W. No response was detected for λ > 280 nm, establishing solar blindness of the device.
Designing materials with microstructural features like multiphase interfaces have shown significant promise for usage in the next generation defense and nuclear applications. The dynamic response of these interfaces in extreme environments is observed to vary with the deformability of individual phases, which could subsequently alter the favored damage nucleation sites related to spall failure. Here, we investigate the role of spacing of interfaces in a nanocrystalline layered Aluminum-Silicon system on the shock wave propagation behavior, and microstructural and defect evolution using classical molecular dynamics simulations. The simulations are carried out with different hypothetical Al/Si microstructures including variations in the distribution of Si grains as layers in a nanocrystalline Al matrix. The molecular dynamics simulations suggest that spall failure is preferentially initiated at Al/Si interfaces. In addition, for the same system volume and same concentration of Si, a higher number of layers is marked by an increase in shock wave velocity and reduced resistance to spall failure.
Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al 0.7 Sc 0.3 N film on the W/c-sapphire substrate is 0.4±0.3 MV cm -1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiO x /SiO 2 /Si substrate, attributed to the 0.01±0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.
Aluminum scandium nitride (Al 1-x Sc x N/AlScN) (x = 0.32) Lamb wave resonators (LWR) have been fabricated and tested to demonstrate electromechanical coupling coefficients (k t 2 ) in excess of 10%. The resonators exhibited an average k t 2 and unloaded quality factor (Q u ) of 10.28% and 711, respectively, when calculated from the measured data. Applying the Butterworth Van-Dyke (BVD) model to the measured data enabled the extraction of the resonator's lumped element parameters to calculate the motional quality factor (Q m ), which neglects the contributions of the electrical traces. For the best measured resonator response, results from the BVD model showed a Q m of 1184 and a resulting figure-of-merit (FOM = K 2 ·Q m ) of 100. Comparing the response of similar AlScN and AlN resonators shows that the AlScN LWR has a significantly lower motional resistance (R m ), suggesting that AlScN has a strong potential for use in piezoelectric microelectromechanical oscillators.
Scintillators are vital components for nuclear instrumentation and its applications, including plasma diagnostics and imaging. As yields in controlled fusion experiments increase, the radiation tolerance of scintillator candidates for use in instrumentation is of particular importance. High radiation exposure can damage scintillating materials and alter the optical properties. The effects of radiation damage in Ce-doped mixed garnet ceramics over the compositional range (Y,Gd,Lu) 3 (Al,Ga) 5 O 12 are investigated using optical techniques. The samples were exposed to 200 keV protons to an accumulated fluence of 10 16 protons per square centimeter, then characterized using diffuse reflectance spectroscopy (DRS). DRS with visible light can assess the radiation tolerance of opaque poly-crystalline samples, which can be easily sintered from powders and thus offer distinct advantages in characterization compared to single crystals. Qualitative trends in induced absorption are presented as a function of composition, and the ideal cerium dopant concentration for Y 2 LuAl 5 O 12 is determined to be 0.60–0.75 mol.%.
This paper reports the retention behavior for Al 0.93 B 0.07 N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al 0.93 B 0.07 N/W/Al 2 O 3 film stacks first induced wake-up and then a region of constant switchable polarization. Here, the films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 10 6 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm 2 . The predicted OS retention is 82% after 10 yr baking at 200 °C.
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ 5 free exciton binding energy of 57 meV.
In this study, we demonstrate the ability of polarity inversion of sputtered aluminum scandium nitride thin films through post-fabrication processes with domain widths as small as 220 nm at a periodicity of 440 nm. An approach using photo- and electron-beam lithography to generate sub-quarter micrometer feature size with adjustable duty cycle through a lift-off process is presented. Here, the film with a coercive field $E_c^+$ of 5.35 MV/cm was exercised first with a 1 kHz triangular double bipolar wave and ultimately poled with a 0.5 kHz double monopolar wave using a Radiant Precision Premier II tester. The metal polar (M-polar) and nitrogen polar (N-polar) domains were identified and characterized through potassium hydroxide wet etching as well as piezoresponse force microscopy (PFM). Well-distinguished boundaries between the oppositely polarized domain regions were confirmed through the phase diagram of the PFM results. The relationship between the electrode width, poling voltage, and domain growth was experimentally studied and statistically analyzed, where 7.96 nm/V domain width broadening vs escalating poling voltage was observed. This method produces extremely high domain spatial resolution in III-nitride materials via poling and is transferable to a CMOS-compatible photolithography process. The spatial resolution of the periodically poled Al 0.68 Sc 0.32 N is suitable for second-harmonic generation of deep ultraviolet through quasi-phase-matching and RF MEMS operating in the X-Band spectrum.
Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.
Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d 33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.
Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.
Mg 3 Cr 2 Al 18 (abbreviated in this report as MCA) is the parent phase for a large class of intermetallic compounds that belong to the cubic crystal space group, $Fd\overline{3}m$. The purpose of this paper is to introduce an ideal, unrelaxed crystal structure for compounds isostructural with MCA. There are five distinct atomic sublattices in MCA compounds, which can be denoted, $A, B, C, D,$ and $E$. With this, a general description for MCA structures can be written as $A^{8a}_{1}B^{16c}_{2}C^{16d}_{2}D^{48f}_{6}E^{96g}_{12}$, where the superscripts represent the Wyckoff special equipoints associated with the various sublattices in MCA, and the subscripts indicate the contributions of each sublattice to the stoichiometry of one formula unit in an any given MCA structured compound. Sublattices D and E are where deviations from ideality occur in real, MCA-like compounds. This paper examines MCA bond lengths, nearest-neighbour polyhedral arrangements, 3-D sublattice crystal structures, 2-D atom tessellation patterns, and crystal chemical effects associated with atomic relaxations on the $D$ and $E$ sublattices. The ideal MCA crystal structure developed in this report provides an appropriate initial structure for use as input to crystal structure refinements of diffraction data for MCA-like phases being examined experimentally, or as input for computational, atomistic simulations of the structures of such compounds.
Hydride beds containing LaNi 4.25 Al 0.75 (LANA.75) are used to store significant quantities of tritium. These hydride beds have a limited service life due to radiolytic decay of tritium to 3He within the metal matrix. The crystal structure of the hydride is altered by trapped 3 He, which has a very low solubility in the metal. The altered structure induces the formation of a heel of trapped hydrogen isotopes and diminishes the reversible capacity of the hydride. With sufficient tritium exposure, the bed loses the ability to deliver 3He-free tritium, and replacement is needed. Demonstration of a means to regenerate tritium-aged LANA.75 in situ would delay or even eliminate the need to replace lanthanum nickel aluminum (LANA) hydride beds. This paper presents test results obtained during regeneration testing. The efficacy of regeneration testing was evaluated by comparing tritium desorption isotherms collected on the hydride before and after exposure to regeneration conditions. Testing was performed on a bench-scale tritium-aged LANA.75 sample that was previously isotopically exchanged (from tritium to deuterium), passivated, and recovered. Once transferred to a high-temperature test cell, the deuterium heel of the sample was isotopically exchanged with tritium, and a baseline desorption isotherm was collected for comparison purposes. The sample was then heated under vacuum, and comparative isotherms were gathered between regeneration evolutions. Shifts in isotherms show progressive improvements with higher-temperature exposure over the tritium-aged baseline. The heel was significantly reduced, and the reversible capacity of the hydride was essentially restored to near virgin values. For all tested conditions, the plateau pressure remained higher than virgin LANA.75.
Guided by thermodynamic modeling, engineering phase transformation pathways via thermo-mechanical processing, in a complex concentrated alloy/high entropy alloy (HEA) of composition Al 0.3 CoFeNi, lead to a novel multi-scale microstructure consisting of fine-scale FCC + L1 2 grains mixed with B2 + BCC grains. The two-step pathway comprises initial decomposition of the parent single-phase FCC to form a fine-grained FCC + B2 microstructure, which further decomposes in the second step into the complex four-phase mixture, exhibiting an excellent combination of tensile yield stress of ~1490 MPa, ultimate tensile strength of ~1663 MPa, with a good ductility of ~12% at room temperature. This paper reports a novel multi-phase microstructure in a HEA/CCA similar to the microstructure observed in dual-phase stainless steel. This report exemplifies the novelty of HEA/CCA compositional space.
Precipitate strengthened high-temperature alloys are currently used in safety-critical applications. Understanding precipitate stability and solute segregation mechanisms at high temperatures is key to designing high-strength alloys. Rapid in-situ approaches, therefore, are pivotal in accelerating the alloy design process. Hereby using the test case of a promising high-temperature Al-Cu-Mn-Zr alloy, we demonstrate the value of in-situ atom probe tomography coupled with in-situ transmission electron microscopy to reveal atomic-scale mechanisms that lead to the emergence of non-equilibrium solute segregation. Mn and Zr segregation at strengthening precipitate(θ’)-matrix interface increases the kinetic barrier for phase transformation thus retaining high-temperature strength.
Abstract An ultra-thin overcoating of zirconium oxide (ZrO 2 ) film on CuO-ZnO-Al 2 O 3 (CZA) catalysts by atomic layer deposition (ALD) was proved to enhance the catalytic performance of CZA/HZSM-5 (H form of Zeolite Socony Mobil-5) bifunctional catalysts for hydrogenation of CO 2 to dimethyl ether (DME). Under optimal reaction conditions (i.e. 240 °C and 2.8 MPa), the yield of product DME increased from 17.22% for the bare CZA/HZSM-5 catalysts, to 18.40% for the CZA catalyst after 5 cycles of ZrO 2 ALD with HZSM-5 catalyst. All the catalysts modified by ZrO 2 ALD displayed significantly improved catalytic stability of hydrogenation of CO 2 to DME reaction, compared to that of CZA/HZSM-5 bifunctional catalysts. The loss of DME yield in 100 h of reaction was greatly mitigated from 6.20% (loss of absolute value) to 3.01% for the CZA catalyst with 20 cycles of ZrO 2 ALD overcoating. Characterizations including hydrogen temperature programmed reduction, x-ray powder diffraction, and x-ray photoelectron spectroscopy revealed that there was strong interaction between Cu active centers and ZrO 2 .
Characterizing intrinsic defects is an essential step in evaluating materials for novel optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but a tradeoff is present between maximizing the band gap while remaining sensitive to the wavelength of interest and minimizing the incorporation of fresh defects by growing not-yet-optimized alloys. We present a series of capacitance-based measurements, including deep-level optical spectroscopy, steady-state photocapacitance, and illuminated capacitance-voltage, on photodiodes with lightly n-type Al x In y Ga 1−x−y P absorber regions. Several deep levels are identified, including one near the midgap. Although the inclusion of aluminum increases each trap density by approximately 10×, the hole capture cross-section also appears to decrease, suggesting that Shockley–Read–Hall dark currents may be suppressed. These materials may be good candidates for the development into silicon photomultiplier analogs with a wider bandgap for scintillator applications.