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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

Ovonic threshold switching selectors are widely studied owing to the essential application in high density phase-change memory. Amorphous GeS is proposed as a potential candidate for the excellent performance. However, the knowledge of amorphous GeS is still insufficient up to date. Here, we have studied the structure and electronic characteristics of GeS in the amorphization process, by using ab initio molecular dynamics simulations. The results indicate that the amorphous GeS is mainly made up of Ge–S bonds. The Ge- and S-centered clusters are dominantly in the form of octahedral structures in liquid GeS. Furthermore, during the amorphization process, most of Ge-centered clusters become highly coordinated octahedrons while a small number of Ge-centered clusters change to tetrahedrons, and the S-centered clusters deviate from the octahedral structure gradually. In addition, the large bandgap and the relatively small mid-gap states in amorphous GeS lead to a high switching voltage.

42 ENGINEERING↗
DOE OSTI2026

Multi-machine validation of plasma initiation modelling and prospects for future devices: Predicting plasma initiation using only hardware design and control room input data

This paper reports on the generic prediction capability of full electromagnetic plasma initiation modelling with DYON, which was carried out for the first time in fusion research by the joint modelling of the International Tokamak Physics Activity—Integrating Operation Scenario group. The following devices were included in the experiment database: VEST (spherical torus, copper coils, Stainless steel wall, R/a = 0.3 m/0.2 m, V v = 3.7 m 3 ), MAST-U (spherical torus, copper coils, C wall, R/a = 0.7 m/0.5 m, V v = 55 m 3 ), EAST (conventional tokamak, superconducting coils, metallic wall, R/a = 1.85 m/0.5 m, V v = 38 m 3 ), DIII-D (conventional tokamak, copper coils, C wall, R/a = 1.67 m/0.65 m, V v = 35 m 3 ), and KSTAR (conventional tokamak, superconducting coils, C wall, R/a = 1.8 m/0.5 m, V v = 55 m 3 ). Despite the different hardware features of the devices, the required operating spaces of the loop voltage induction and prefill gas pressure for inductive plasma initiation in each device were successfully reproduced by the predictive simulations with DYON using only the individual hardware design and the control room input data for each discharge. This successful validation across multiple machines demonstrates that the full electromagnetic DYON modelling can capture the essential physics of inductive plasma initiation. The simulation settings commonly employed for all modelling and the modifications necessary to account for the discrepancies between individual devices are reported. Predictions for ITER based on the multi-machine validation indicate that a wide range of prefill gas pressures exists for the Townsend breakdown and the plasma burn-through (0.01–1.5 mPa).

DYON↗
DOE OSTI2021

Fabrication and Characterization of Non-Equilibrium Plasma-Treated PVDF Nanofiber Membrane-Based Sensors

The effect of a self-pulsing non-equilibrium plasma discharge on piezoelectric PVDF nanofiber membrane was investigated. The plasma discharge was generated in air with a DC power source, with a discharge current of 0.012 mA, a nominal interelectrode separation of 1 mm, and discharge voltage of ~970 V. In a continuous fabrication process, the electrospinning method was used to generate thin nanofiber membrane with a flow rate of 0.7–1 mL h -1 and 25–27 kV voltage to obtain the nanofiber with high sensitivity and a higher degree of alignment and uniformity over a larger area. Plasma treatment was applied on both single layer and multi-layer (three layers) nanomembranes. In addition, simultaneously, the nanofiber membranes were heat-treated at a glass transition temperature (80–120 °C) and then underwent plasma treatment. Fourier-transform infrared (FTIR) spectroscopy showed that the area under the curve at 840 and 1272 cm -1 (β phase) increased due to the application of plasma and differential scanning calorimeter (DSC) indicated an increase in the degree of crystallinity. Finally, PVDF sensors were fabricated from the nanofibers and their piezoelectric properties were characterized. The results suggested that compared to the pristine samples the piezoelectric properties in the plasma and plasma-heat-treated sensors were enhanced by 70% and 85% respectively.

42 ENGINEERING↗
NASA NTRS1986

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

Liu, Shih-Ming J.↗
DOE OSTI2023

A Quenched Disorder in the Quantum-Critical Superconductor CeCoIn 5

Emergent inhomogeneous electronic phases in metallic quantum systems are crucial for understanding high- T c superconductivity and other novel quantum states. In particular, spin droplets introduced by nonmagnetic dopants in quantum-critical superconductors (QCSs) can lead to a novel magnetic state in superconducting phases. However, the role of disorders caused by nonmagnetic dopants in quantum-critical regimes and their precise relation with superconductivity remain unclear. Here, the systematic evolution of a strong correlation between superconductive intertwined electronic phases and antiferromagnetism in Cd-doped CeCoIn 5 is presented by measuring current–voltage characteristics under an external pressure. In the low-pressure coexisting regime where antiferromagnetic (AFM) and superconducting (SC) orders coexist, the critical current ( I c ) is gradually suppressed by the increasing magnetic field, as in conventional type-II superconductors. At pressures higher than the critical pressure where the AFM order disappears, I c remarkably shows a sudden spike near the irreversible magnetic field. In addition, at high pressures far from the critical pressure point, the peak effect is not suppressed, but remains robust over the whole superconducting region. These results indicate that magnetic islands are protected around dopant sites despite being suppressed by the increasingly correlated effects under pressure, providing a new perspective on the role of quenched disorders in QCSs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

On the origins of the continuum radiation of an underwater nanosecond pulsed discharge: an absolute-intensity optical emission spectroscopy study

The plasma properties of an underwater nanosecond pulsed discharge remain not fully understood despite being extensively studied for several decades. In this work, we focus on the continuum radiation generated in such discharges. The discharge is characterized by power measurements as well as by absolute emission spectroscopy. When observed, Stark broadenings of H α , H β and O (777 nm) are employed for electron number densities measurements. The discharge was generated by a 10 ns main voltage pulse followed by multiple secondary pulses, which last up to 4 μs after the primary pulse. It is shown that a peak power of 3.5 MW and energy of 35 mJ is coupled during the main voltage pulse. A quantitative estimation of the different possible continuum radiation sources is performed through analytical calculations. This includes emission (blackbody, free–bound and free–free bremsstrahlung radiations) and absorption (electron–ion and electron–neutral free–free inverse bremsstrahlung) mechanisms. Our results suggest that electron–neutral free–free bremsstrahlung is the principal mechanism responsible for the strong continuum radiation observed experimentally during the primary pulse. We also show that self-absorption through electron–neutral (and electron–ion) inverse bremsstrahlung plays an important role in the main discharge pulse. Further, our results indicate the non-negligible additional contribution of the H 2 continuum during the first reflected pulse which is likely ignited in bubbles generated by the first discharge pulse.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

Mechanically Biased, Hinged Pairs of Piezoelectric Benders

The upper part of the figure depicts an actuator that comprises two mechanically biased piezoelectric benders hinged together at their ends and equipped with tabs at their mid-length points for attachment to the relatively moving objects that are to be actuated. In the example of the figure, the attachment tabs are labeled to indicate that the actuator is used to drive a pump piston relative to a base plate. Actuators of this type could be used to drive low-power, small-volume pumps in consumer, medical, and aerospace applications, and to generate and measure linear displacements in such robotic applications as teleoperation and tactile feedback. Each bender is a bimorph a unitary plate that comprises an upper and a lower piezoelectric layer plus electrode layers. Benders may also be made of several layers arranged to produce the same effect at the lower operating voltages. As stated above, each bender is mechanically biased; it is fabricated to have a small permanent curvature (the bias curvature) in the absence of applied voltage. As on other bimorphs, the electrical connections on each bender are arranged so that an applied voltage of suitable polarity causes the upper layer to expand and the lower layer to contract. In this case, the net effect of applying the voltage is that the plate becomes more concave as viewed from below. Conversely, an applied voltage of the opposite polarity causes the plate to become less concave as viewed from below. The benders in a hinged pair are oriented with their bias curvatures concave inward, so that there is a bias distance between the attachment tabs. The two benders are connected electrically in parallel, with their connection polarities chosen so that an applied voltage of one polarity causes both benders to become more convex inward (more bent), while an applied voltage of the opposite polarity causes both benders to become less convex inward (less bent). An increase or decrease in bend is accompanied by an increase or decrease in distance between the attachment tabs; this increase or decrease is the linear displacement desired for actuation. Because the displacement can be either positive or negative relative to the bias distance, depending on the polarity of the applied voltage, the overall stroke achievable for a given magnitude of applied voltage is double the stroke achievable in the absence of mechanical bias. Each hinged pair can be regarded as a unit cell that can serve as a building block for a larger actuator: Multiple unit cells can be stacked (mechanically connected in series), as shown in the lower part of the figure, and electrically connected in parallel to multiply the overall stroke achievable at a given applied voltage.

Sager, Frank E.↗
NASA NTRS2009

Extended Life PZT Stack Test Fixture

Piezoelectric stacks are being sought to be used as actuators for precision positioning and deployment of mechanisms in future planetary missions. Beside the requirement for very high operation reliability, these actuators are required for operation at space environments that are considered harsh compared to normal terrestrial conditions.These environmental conditions include low and high temperatures and vacuum or high pressure. Additionally, the stacks are subjected to high stress and in some applications need to operate with a very long lifetime durability.Many of these requirements are beyond the current industry design margins for nominal terrestrial applications. In order to investigate some of the properties that will indicate the durability of such actuators and their limitations we have developed a new type of test fixture that can be easily integrated in various test chambers for simulating environmental conditions, can provide access for multiple measurements while being exposed to adjustable stress levels. We designed and built two test fixtures and these fixtures were made to be adjustable for testing stacks with different dimensions and can be easily used in small or large numbers. The properties that were measured using these fixtures include impedance, capacitance, dielectric loss factor, leakage current, displacement, breakdown voltage, and lifetime performance. The fixtures characteristics and the test capabilities are presented in this paper.

test fixtures↗
NASA NTRS2001

Characterization of Transducers and Resonators under High Drive Levels

In many applications, piezoelectric transducers are driven at AC voltage levels well beyond the level for which the material was nominally characterized. In this paper we describe an experimental setup that allows for the determination of the main transducer or resonator properties under large AC drive. A sinusoidal voltage from a waveform generator is amplified and applied across the transducer/resonator in series with a known high power resistor. The amplitude of applied voltage and the amplitude and the relative phase of the current through the resistor are monitored on a digital scope. The frequency of the applied signal is swept through resonance and the voltage/current signals are recorded. After corrections for the series resistance and parasitic elements the technique allows for the determination of the complex impedance spectra of the sample as a function of frequency. In addition, access to the current signal allows for the direct investigation of non-linear effects through the application of Fourier transform techniques on the current signal. Our results indicate that care is required when interpreting impedance data at high drive level due to the frequency dependence of the dissipated power. Although the transducer/resonator at a single frequency and after many cycles may reach thermal equilibrium, the spectra as a whole cannot be considered an isothermal measurement due to the temperature change with frequency. Methods to correct for this effect will be discussed. Results determined from resonators of both soft and hard PZT and a ultrasonic horn transducer are presented.

transducers↗
DOE OSTI2022

Dynamic Matrix Completion Based State Estimation in Distribution Grids

The power distribution network is undergoing tremendous transformation due to an increase in the penetration of renewable energy resources and electric vehicles. These changes have resulted in greater uncertainty and dynamics in the distribution grid states. Therefore, the ability to track and monitor system states has become a critical need for accurate and timely control actions. In this paper, we propose two dynamic sparsity-based state estimation approaches for distribution systems: (1) locally weighted matrix completion (LW-MC) and (2) Bayesian matrix completion with Kalman filter prediction (BMC-KF). The performance of the proposed dynamic state estimation strategies is compared with the classic/static matrix completion (static-MC) approach using the IEEE 37 and IEEE 123 bus test systems. Finally, results indicate that BMC-KF approach outperforms both LW-MC as well as static-MC even when 30% of the measurement data is available. Computational complexity associated with both approaches is quantified.

42 ENGINEERING↗
NASA NTRS1985

Control of superlattice morphology in GaAs sub1-subxPsubx cascade cells

Superlattices of GaAs(1-x)p(x) are being incorporated into cascade solar cell structures in order to reduce the dislocation density in the top cells and thus reduce recombination loss and increase output voltage. For a superlattice to effectively block the propagation of dislocations its average composition must be equal to that of the layer beneath it (from efficiency considerations for a cascade cell, the average composition should be about GaAs(.7)P(.3). When superlattices of this approximate composition were grown on GaAs by MOCVD, severe distortion of the crystal layers was observed. The essential features of this distortion are nonplanar morphology and accelerated etching in regions containing excess phosphorus and clusters of dislocations. Similar observations have been made with superlattices grown with two other MOCVD systems, indicating that the problem is of fundamental technological significance, not just an artifact of one particular growth system. The nature of the distortion effect is described, and several strategies for preventing its occurrence are presented.

Blakeslee, A. E.↗
DOE OSTI2022

Simultaneously Enhancing Exciton/Charge Transport in Organic Solar Cells by an Organoboron Additive

Efficient exciton diffusion and charge transport play a vital role in advancing the power conversion efficiency (PCE) of organic solar cells (OSCs). Here, a facile strategy is presented to simultaneously enhance exciton/charge transport of the widely studied PM6:Y6-based OSCs by employing highly emissive trans-bis(dimesitylboron)stilbene (BBS) as a solid additive. BBS transforms the emissive sites from a more H-type aggregate into a more J-type aggregate, which benefits the resonance energy transfer for PM6 exciton diffusion and energy transfer from PM6 to Y6. Transient gated photoluminescence spectroscopy measurements indicate that addition of BBS improves the exciton diffusion coefficient of PM6 and the dissociation of PM6 excitons in the PM6:Y6:BBS film. Transient absorption spectroscopy measurements confirm faster charge generation in PM6:Y6:BBS. Moreover, BBS helps improve Y6 crystallization, and current-sensing atomic force microscopy characterization reveals an improved charge-carrier diffusion length in PM6:Y6:BBS. Finally, owing to the enhanced exciton diffusion, exciton dissociation, charge generation, and charge transport, as well as reduced charge recombination and energy loss, a higher PCE of 17.6% with simultaneously improved open-circuit voltage, short-circuit current density, and fill factor is achieved for the PM6:Y6:BBS devices compared to the devices without BBS (16.2%).

14 SOLAR ENERGY↗
DOE OSTI2023

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗
NASA NTRS2016

Design and Growth of Novel Compounds for Radiation Sensors: Multinary Chalcogenides

Increasing threats of radiological weapons have revitalized the researches for low cost large volume -ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage. A low thermal gradient and high purity source material were used to reduce thermal stresses in large crystals. By improving the purification of the as supplied source materials very high quality thallium, selenium and arsenic was achieved for preparing stoichiometric Tl3AsSe3 compound. Low gradient (<20K/cm) and slow growth rate (1-2 cm/day) produced crystals with reduced stress. Crystals did not show any micro cracking during fabrication of crystals grown with high purity and at low thermal gradient. Since thallium is a major component and very sensitive to surface oxidation, removal of surface and bulk oxides is very important. Intentional increase in the growth rate from 1cm/day to higher speed (>5cm/day) showed very different morphologies on the surface of the crystals. Electrical resistivity was one order of magnitude higher than previously reported value and it was observed to be constant as the function of frequency.

Singh, N. B.↗
DOE OSTI2022

A High Potential, Low Capacity Fade Rate Iron Complex Posolyte for Aqueous Organic Flow Batteries

An iron complex, tris(4,4'-bis(hydroxymethyl)-2,2'-bipyridine) iron dichloride is reported, which operates at near-neutral pH with a redox potential of 0.985 V versus SHE. This high potential compound is employed in the posolyte of an aqueous flow battery, paired with bis(3-trimethylammonio)propyl viologen tetrachloride in the negolyte, exhibiting an open-circuit voltage of 1.3 V at near-neutral pH. It demonstrates excellent cycling performance with a low temporal capacity fade rate of 0.07% per day over 35 days of cycling. The extended cycling lifetime is the result of low permeability and improved structural stability of the newly developed iron complex compared to that of the iron tris(bipyridine) complex. The combination of high redox potential and low capacity fade rate compares favorably with those of all previously demonstrated organic and organometallic aqueous posolytes. Extensive investigation into the possible degradation mechanisms, including post-mortem chemical and electrochemical analyses, indicates that stepwise ligand dissociations of the iron complex are responsible for the reported capacity loss during cell cycling. Further, this investigation provides unprecedented insight to guide further improvements of such metalorganic compounds for energy storage and conversion applications.

25 ENERGY STORAGE↗
NASA NTRS1982

Initial utility experience with cluster of three Mod-2 wind turbine systems

This paper describes the initial utility experiences of operating three MOD-2s during the Engineering Acceptance Testing. Electrical quantities of bus voltage, phase currents and power are initially being recorded to evaluate impacts to customers on the 69-kV subtransmission line during synchronization and operation of one or more WTSs. To date, effects on the system have been essentially undetectable. Measurements of television signal strengths were taken at an existing television remote pickup and relay station at the WTS site. Potential TV signal interference problems from the WTSs have been avoided by replacing the remote pickups with microwave repeater links for the four TV channels received from Portland, Oregon. Preliminary measurements of audible and sub-audible noise levels indicate that the upwind rotor, tubular tower design of the MOD-2 does not have the pulsing high intensity infrasound problems experienced by the MOD-1 machine at Boone, North Carolina.

Seely, D. B.↗
NASA NTRS2012

Mid- and Long-IR Broadband Quantum Well Photodetector

A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs.

Soibel, Alexander↗