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At least 1,081 records · Page 60

Superfocusing of an ultrashort plasmon pulse by a conducting cone

We have shown theoretically the possibility of controlling nanoscale superfocusing of plasmons in a metal conical tip by modulating the carrier frequency of the pulse. The propagation of an ultrashort plasmon pulse in a metal nanoneedle is simulated numerically. The calculation is based on an asymptotic analytical solution of Maxwell's equations for electromagnetic wave propagation in a conical conductor in the vicinity of its apex, obtained by the approximate separation of variables in spherical coordinates. The dependence the field superfocusing on the conductor material, pulse chirp and propagation length is studied. (nanooptics)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Boosting Photoabsorption by Attosecond Control of Electron Correlation

Electron correlation plays an essential role in a wide range of fundamentally important many-body phenomena in modern physics and chemistry. An example is the importance of electron-electron correlation in multiple ionization of multielectron atoms and molecules exposed to intense laser pulses. Manipulating the dynamic electron correlation in such photoinduced processes is a crucial step toward the coherent control of chemical reactions and photobiological processes. The generation of an attosecond extreme ultraviolet (EUV) pulse may enable such controls. Here, we show for the first time, from full-dimensional ab initio calculations of double ionization of helium in intense laser pulses ( L = 780 nm), that the electron-electron interactions can be instantaneously tuned using a time-delayed attosecond EUV pulse. Consequently, the probability of producing energetic electrons from excessive photoabsorption can be enhanced by an order of magnitude, by the attosecond control of electron-electron correlation.

74 ATOMIC AND MOLECULAR PHYSICS↗

A high-current rail-type gas switch with preionization by an additional corona discharge

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS 2 and WSe 2 ) on Si/SiO 2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process–structure–performance relationships. Finally, this growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

2D electronics↗

Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Epithermal Neutron Activation Analysis of the Asian Herbal Plants

Asian medicinal herbs Chrysanthemum (Spiraea aquilegifolia Pall.) and Red Sandalwood (Pterocarpus Santalinus) are widely used in folk and Ayurvedic medicine for healing and preventing some diseases. The modern medical science has proved that the Chrysanthemum (Spiraea aquilegifolia Pall.) possesses the following functions: reducing blood press, dispelling cancer cell, coronary artery's expanding and bacteriostating and Red Sandalwood (Pterocarpus Santalinus) is recommended against headache, toothache, skin diseases, vomiting and sometimes it is taken for treatment of diabetes. Species of Chrysanthemums were collected in the north-eastern and central Mongolia, and the Red Sandalwood powder was imported from India. Samples of Chrysanthemums (branches, flowers and leaves)(0.5 g) and red sandalwood powder (0.5 g) were subjected to the multi-element instrumental neutron activation analysis using epithermal neutrons (ENAA) at the IBR-2 reactor, Frank Laboratory of Neutron Physics (FLNP) JINR, Dubna. A total of 41 elements (Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Zn, As, Se, Br, Rb, Sr, Zr, Mo, Cd, Cs, Ba, La, Hf, Ta, W, Sb, Au, Hg, Ce, Nd, Sm, Eu, Tb, Dy, Yb, Th, U, Lu) were determined. For the first time such a large group of elements was determined in the herbal plants used in Mongolia. The quality control of the analytical results was provided by using certified reference material Bowen Cabbage. The results obtained are compared to the ''Reference plant? data (B. Markert, 1992) and interpreted in terms of excess of such elements as Se, Cr, Ca, Fe, Ni, Mo, and rare earth elements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A Novel Technique for Pulsed Operation of Magnetrons without Modulation of Cathode Voltage

Modern pulsed superconducting accelerators of megawatt beams require efficient RF sources controllable in phase and power. For each Superconducting RF (SRF) cavity is desirable a separate RF source with power up to hundreds of kW with pulse duration in the millisecond range. The efficiency of the traditional RF sources (klystrons, IOTs, solid-state amplifiers) is lower than that of the magnetrons, while the cost of a unit of RF power is much higher. Therefore the magnetron-based RF sources would significantly reduce the capital and operation costs in comparison with the traditional RF sources. A recently developed an innovative technique makes possible the pulsed generation of magnetrons powered below the self-excitation threshold voltage. This technique does not require pulse modulators to form RF pulses. The magnetron operation in this regime is stable, low noise, controllable in phase and power, and provides higher efficiency than other types of RF power sources. It allows operation in pulsed modes with large duty factor. The developed technique and its experimental verification are considered and discussed.

43 PARTICLE ACCELERATORS↗

Study of the formation of 3-D titania nanofibrous structure by MHz femtosecond laser in ambient air

In this study, we describe the formation mechanism of web-like three-dimensional (3-D) titania nanofibrous structures during femtosecond laser ablation of titanium (Ti) targets in the presence of background air. First, we demonstrate the mechanism of ablation of Ti targets by multiple femtosecond laser pulses at ambient air in an explicit analytical form. The formulas for evaporation rates and the number of ablated particles, which is analogous to the deposition rate of the synthesized nanofibers, for the ablation by a single pulse and multiple pulses as a function of laser parameters, background gas, and material properties are predicted and compared to experimental results. Afterwards, the formation of nanofibrous structures is demonstrated by applying an existing simplified kinetic model to Ti targets and ambient conditions. The predicted theory provides nanofiber diameter dependency with the combination of laser parameters, target properties, and ambient gas characteristics. Experimental studies are then performed on titania nanofibrous structures synthesized by laser ablation of Ti targets using MHz repletion-rate femtosecond laser at ambient air. The models' predictions are then compared with the experimental results, where nanostructures with different morphologies are manufactured by altering laser parameters. Our results indicate that femtosecond laser ablation of Ti targets at air background yields crystalline titania nanostructures. The formation of crystalline titania nanostructures is preceded by thermal mechanism of nucleation and growth. The results point out that laser pulse repetition and dwell time can control the density, size, and pore size of the engineered nanofibrous structure. As the deposition rate of nanostructures is analogous to the ablation rate of the target, higher density of nanofibrous structure is seen at greater laser fluences. The predicted theory can be applied to predict ablation mechanism and nanofiber formation of different materials.

36 MATERIALS SCIENCE↗

Program to design, fabricate, test, and deliver a thermal control-mixing control device for the George C. Marshall Space Flight Center

The development and testing of a temperature sensor and pulse duration modulation (PDM) diverter valve for a thermal control-mixing control device are described. The temperature sensor selected for use uses a fluidic pin amplifier in conjunction with an expansion device. This device can sense changes of less than 0.25 F with greater than 15:1 signal to noise ratio when operating with a typical Freon pump supplied pressure. The pressure sensitivity of the sensor is approximately 0.0019 F/kPa. The valve which was selected was tested and performed with 100% flow diversion. In addition, the valve operates with a flow efficiency of at least 95%, with the possibility of attaining 100% if the vent flow of the PDM can be channeled through the last stage of the diverter valve. A temperature sensor which utilized an orifice bridge circuit and proportional-vortex combination mixing valve were also evaluated, but the concepts were rejected due to various problems.

Thurston, T. S.↗

Selective Detection in Impulsive Low-Frequency Raman Imaging Using Shaped Probe Pulses

Impulsive stimulated Raman scattering (ISRS) using a single short femtosecond pump pulse to excite molecular vibrations offers an elegant pump-probe approach to perform vibrational imaging below 200 cm –1 . One shortcoming of ISRS is its inability to offer vibrational selectivity as all the vibrational bonds whose frequencies lie within the short pump-pulse bandwidth are excited. To date, several coherent control techniques have been explored to address this issue and selectively excite a specific molecular vibration by shaping the pump pulse. There has not been any systematic work that reports an analogous shaping of the probe pulse to implement preferential detection. In this work, we focus on vibrational imaging and report vibrational selective detection by shaping the probe pulse in time. Here, we demonstrate numerically and experimentally two pulse-shaping strategies with one functioning as a vibrational notch filter and the other functioning as a vibrational low-pass filter. This enables fast (25 μs/pixel) and selective hyperspectral imaging in the low-frequency regime (< 200 cm –1 ).

74 ATOMIC AND MOLECULAR PHYSICS↗

Analysis of the effects of firing Orbiter primary reaction control system jets with an attached truss structure

A study was conducted to determine the dynamic effects of firing the orbiter primary reaction control jets during assembly of protoflight space station structure. Maximum longeron compressive load was calculated as a function of jet pulse time length, number of jet pulses, and total torque imposed by the reaction control jets. The study shows that it is possible to fire selected jets to achieve a pitch maneuver without causing failure of the attached structure.

Kaszubowski, M.↗

Waterhammer Testing and Modeling of the Ares I Upper Stage Reaction Control System

NASA's Ares I rocket is the agency's first step in completing the goals of the Constellation Program, which plans to deliver a new generation of space explorers into low earth orbit for future missions to the International Space Station, the moon, and other destinations within the solar system. Ares I is a two-stage rocket topped by the Orion crew capsule and its service module. The launch vehicle's First Stage is a single, five-segment reusable solid rocket booster (RSRB), derived from the Space Shuttle Program's four segment RSRB. The vehicle's Upper Stage, being designed at Marshall Space Flight Center (MSFC), is propelled by a single J-2X Main Engine fueled with liquid oxygen and liquid hydrogen. During active Upper Stage flight of the Ares I launch vehicle, the Upper Stage Reaction Control System (US ReCS) will perform attitude control operations for the vehicle. The US ReCS will provide three-axis attitude control capability (roll, pitch, and yaw) for the Upper Stage while the J-2X is not firing and roll control capability while the engine is firing. Because of the requirements imposed upon the system, the design must accommodate rapid pulsing of multiple thrusters simultaneously to maintain attitude control. In support of these design activities and in preparation for Critical Design Review, analytical models of the US ReCS propellant feed system have been developed using the Thermal Hydraulic Library of MSC.EASY5 v.2008, herein referred to as EASY5. EASY5 is a commercially available fluid system modeling package with significant history of modeling space propulsion systems. In Fall 2009, a series of development tests were conducted at MSFC on a cold-flow test article for the US ReCS, herein referred to as System Development Test Article (SDTA). A subset of those tests performed were aimed at examining the effects of waterhammer on a flight-representative system and to ensure that those effects could be quantified with analytical models and incorporated into the design of the flight system. This paper presents an overview of the test article and the test approach, along with a discussion of the analytical modeling methodology. In addition, the results of that subset of development tests, along with analytical model pre-test predictions and post-test model correlations, will also be discussed in detail.

Williams, J. Hunter↗

Analysis of MHD stability and active mode control on KSTAR for high confinement, disruption-free plasma

Long-pulse plasma operation at high normalized beta, $β_N$, above the $\textit{n}$= 1 ideal MHD no-wall stability limit in KSTAR is presently limited by tearing instabilities rather than resistive wall modes. H-mode plasma operation during the recent KSTAR device campaign produced discharges having strong $\textit{m/n}$= 2/1 tearing instabilities at $β_N$ lower than the ideal MHD no-wall beta limit. The unstable tearing mode consequently reduced plasma confinement and toroidal plasma rotation significantly. We report the experiment confirmed that an extended duration of electron cyclotron heating (ECH) at the initial phase of the discharge plays a critical role in mode destabilization. To study destabilizing mechanisms that affect the mode growth, the stability of the observed tearing modes from plasmas with significantly different $β_N$ is computed by using the resistive DCON code and the M3D-C 1 code. Equilibrium reconstructions that include constraints from internal profile diagnostics, and computed fast particle pressure are used as input for reliable computation of stability. The classical tearing stability index, Δ', from resistive DCON is computed to be unstable when the island is fully saturated with large amplitude, while the unstable mode is not computed by M3D-C 1 . The modified Rutherford equation (MRE) describing the evolution of the island width has been constructed for KSTAR plasmas by using plasma parameters computed by the TRANSP code. The MRE model estimates a saturated island width corresponding to ~10% of the plasma minor radius for equilibrium at high $β_N$ 3 having a stable Δ' from the resistive DCON. In preparation for long-pulse plasma operation at higher beta utilizing increased plasma heating power, a resistive wall mode (RWM) active feedback control algorithm has been completed and enabled on KSTAR. To accurately determine the $\textit{n}$= 1component produced by RWMs, an algorithm has been developed that includes magnetic sensor compensation of the prompt applied field and the field from the induced current on the passive conductors. Use of multiple toroidal sensor arrays is enabled by modifying the sensor toroidal angles assumed in mode decomposition to include the effect of varied mode helicities in the outboard region where the mode measurement is made. This analysis on stability, transport, and control provides the required foundation for disruption prediction and avoidance research on KSTAR.

resistive wall mode (RWM)↗

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

42 ENGINEERING↗

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters

We present a decentralized control strategy that yields switch interleaving among parallel-connected dc-dc buck converters. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform and no communication between different controllers is needed. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work presents the first fully decentralized strategy for switch interleaving in paralleled dc-dc buck converters.

14 SOLAR ENERGY↗

Coherent control of injection currents in high-quality films of Bi{sub 2}Se{sub 3}

Films of the topological insulator Bi{sub 2}Se{sub 3} are grown by molecular beam epitaxy with in-situ reflection high-energy electron diffraction. The films are shown to be high-quality by X-ray reflectivity and diffraction and atomic-force microscopy. Quantum interference control of photocurrents is observed by excitation with harmonically related pulses and detected by terahertz radiation. The injection current obeys the expected excitation irradiance dependence, showing linear dependence on the fundamental pulse irradiance and square-root irradiance dependence of the frequency-doubled optical pulses. The injection current also follows a sinusoidal relative-phase dependence between the two excitation pulses. These results confirm the third-order nonlinear optical origins of the coherently controlled injection current. Experiments are compared to a tight-binding band structure to illustrate the possible optical transitions that occur in creating the injection current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Hybrid zero-voltage switching (ZVS) control for power inverters

A power inverter combination includes a half-bridge power inverter including first and second semiconductor power switches receiving input power having an intermediate node therebetween providing an inductor current through an inductor. A controller includes input comparison circuitry receiving the inductor current having outputs coupled to first inputs of pulse width modulation (PWM) generation circuitry, and a predictive control block having an output coupled to second inputs of the PWM generation circuitry. The predictive control block is coupled to receive a measure of Vin and an output voltage at a grid connection point. A memory stores a current control algorithm configured for resetting a PWM period for a switching signal applied to control nodes of the first and second power switch whenever the inductor current reaches a predetermined upper limit or a predetermined lower limit.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Ellipticity controlled dissociative double ionization of ethane by strong fields

We report the yields of all dissociation channels of ethane dications produced by strong field double ionization were measured. It was found that the branching ratios can be controlled by varying the ellipticity of laser pulses. The CH 3 + formation and H + formation channels show a clear competition, producing the highest and lowest branching ratios at ellipticity of ~0.6, respectively. With the help of theoretical calculations, such a control was attributed to the ellipticity dependent yields of different sequential ionization pathways.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗