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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Dual-Wavelength Time-Resolved Photoluminescence Study of CdSe x Te 1-x Surface Passivation via Mg y Zn 1-y O and Al 2 O 3

Voltage loss is currently one of the biggest challenges facing cadmium telluride (CdTe) based photovoltaics. Determining the location(s) of major voltage loss within the device stack (e.g., front/back interface, grain boundaries) is therefore of primary interest. Here, we present a custom-built time-resolved photoluminescence system with two excitation wavelengths - 670 (standard) and 405 nm - to probe the device stack at depths of approximately 130 and 35 nm, respectively; their comparison helps differentiate interface and bulk contributions to carrier lifetime. We apply this system to examine the passivation effect of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the replacement of CdS with Mg y Zn 1-y O. It is found that x = 0.2 Se is required to obtain lifetime improvements, primarily in the bulk. Additionally, evidence for trapping at the Mg y Zn 1-y O/CdSe x Te 1-x interface was observed. Furthermore, this indicates further work is required to sufficiently passivate the front interface.

CdSeTe↗
DOE OSTI2024

Development of an Optical Library for Coevaporated CdSe x Te 1– x

The conversion efficiency of CdTe solar cells may be improved by bandgap engineering, i.e., changing the bandgap value through the addition of Se in the absorber. The Se alloying enables a short-circuit current density improvement, as it leads to a bandgap energy value decrease. Furthermore, it has been associated with increased minority carrier lifetimes, assuring high open-circuit voltage values. An Se gradient profile control can further optimize the solar cell performance. Thus, an optical model baseline of the CdSe x Te 1–x (CST) compound was developed. Spectroscopic ellipsometry measurements were conducted to accurately extract the optical constants of ten CST layers deposited through coevaporation with x varying from 0 to 1. Using the measured dielectric function spectra from the discrete CST layers with varying x, and considering the composition-induced shift in the critical point energies, an energy-shift model was employed to develop the accurate optical library for the CST compound for any x value to provide data for future modeling and optimization. Furthermore, the library accuracy was validated through optical simulations of the quantum efficiency of a graded CST solar cell using the finite-difference time-domain method by replicating the Se profile in the absorber layer measured through secondary ion mass spectrometry.

14 SOLAR ENERGY↗
DOE OSTI2020

Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

To evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

CPS Testbed Architectures for WAMPAC using Industrial Substation and Control Center Platforms and Attack-Defense Evaluation

Advanced persistent threats and cyberattacks can impact wide-area monitoring, protection, and control (WAMPAC) system operation. Many cyber-physical system (CPS) testbeds have been developed for attack-defense experimentation and attack-resiliency tools evaluation for WAMPAC, but they are limited to a simulation-and-emulation based environment. This paper presents a quasi-realistic CPS attack-defense testbed-based framework for WAMPAC applications using the industrial substation and control center platforms such as eTerra integrated with the hardware-in-the-loop CPS smart grid testbed available at Iowa State University. The proposed framework includes various combinations of industry-grade substation and control center platforms, communication topologies, real-time digital simulators, and a novel cyber-physical distributed intrusion-and-anomaly detection system (D-IADS) for WAMPAC applications. The D-IADS includes a master at the control center and geographically distributed sensor devices at each substation. Each D-IADS sensor deployed at a substation or control center network monitors ingress and egress traffic, detect intrusions, and dispatch alerts to the D-IADS master. The D-IADS master centrally monitors and analyze the alerts and controls D-IADS sensors. We considered an EMP60 synthetic CPS grid as a case study to demonstrate the framework and proposed D-IADS for WAMPAC applications against cyberattack vectors such as Man-in-the-Middle DNP3 attack, denial-of-service, and data-integrity attacks.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Impacts of Control, Penetration, and Distribution of Embedded Storage Network in Bulk Power System

The current shift in generation mix from fossil fuel plants towards variable and intermittent renewable energy sources is poised to create a future grid with reduced physical inertia and mismatch between generation and demand. Embedded storage, which is a concept of a coordinated network of storage units sited at the interface between the transmission and distribution system, is proposed as a mechanism to provide a buffer between generation and demand. This paper proposes an automated framework to model and integrate embedded storage in large-scale power systems with industry-grade grid-following (GFL) and grid-forming (GFM) control technologies. More importantly, the developed framework is used to explore the impacts of embedded storage control, penetration, location, and capacity in providing fast frequency response to the grid under contingency events such as generator trips and faults. The framework and study are conducted using the transient-stability simulation tool PSS/E and a realistic model of the Puerto Rico grid as a chosen test system. The simulation results show that GFL and GFM embedded storage, distributed throughout the system, with sufficient penetration and capacity, can effectively improve primary frequency response of the system under the studied contingency events.

Battery Energy Storage, embedded storage, grid-for↗
DOE OSTI2020

Sub-Degree-Per-Hour MEMS Gyroscope for Measurement While Drilling at 300°C

The orientation module of MWD tool offers the critical drill bit orientation information, including azimuth, inclination and toolface in order to control the path of wellbore. Although high end navigation grade gyroscope can meet the accuracy requirement for azimuth finding, the requirements of cost, size and reliability under harsh environment have largely limited the deployment of gyroscopes in MWD tools. To overcome these constraints, GE Research has developed a low cost, MEMS based Multi-Ring Gyroscope (MRG) capable of azimuth-seeking in MWD applications at 300°C. The MRG prototype has been demonstrated to achieve angular random walk (ARW) better than 0.003 deg/rt(hr) and bias instability of 0.01 deg/hr, capable of meeting azimuth finding accuracy better than 0.25 deg. It has further been tested to remain fully operational at 300 °C.

15 GEOTHERMAL ENERGY↗
DOE OSTI2020

High Efficiency 6-Junction Solar Cells for the Global and Direct Spectra

We show 6-junction inverted metamorphic solar cells with high efficiencies under both the global and direct spectrum, and discuss improvements to device components. High voltage AlGaInP subcells are demonstrated on GaAs substrates miscut 2° towards (111)B by using Sb surfactant to reduce atomic ordering. This miscut enables high voltage and low dislocation density GaInAs subcells by using atomically-ordered GaInP-based graded buffers. One-sun efficiencies of 39.2 ± 1.3% under the global spectrum and 39.4 ± 1.1% direct spectrum have been demonstrated by using these high voltage subcell components. For high efficiency under the concentrated direct spectrum, low resistance is also necessary, which requires a challenging and nonintuitive optimization of tunnel junctions and heterobarriers. Increasing the thickness of a (Al)GaInAs spacer layer between the back surface fields (BSF) and tunnel junctions (TJ) of latticemismatched subcells reduces nonlinear resistance, which implies a detrimental interaction between the BSF and TJ. Concentrator devices with optimized spacer layers show reduced effective resistance and maintain fill factor > 75% at 1100 suns. Device efficiencies under the concentrated direct spectrum peak at 47.1 ± 3.2% at 143 suns.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Simulation App for Time-Resolved Photoluminescence in Thin-Film Solar Cells

We develop a COMSOL Multiphysics-based model and application, or "app", for time-resolved photoluminescence (TRPL) measurements in thin-film solar cells. TRPL is commonly used to measure recombination in thin-film solar cells. However, simulations show that decay times extracted from TRPL data are not, in general, equal to the Shockley-Read-Hall lifetime parameter set in the model. Here, we present a model and app, using graded CdSe y Te 1-y solar cells as an example, that can be used to study impacts of a range of potentially important material and measurement parameters on TRPL results.

minority-carrier lifetime↗
DOE OSTI2021

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗
DOE OSTI2021

Maximizing Yield with Improved Single-Axis Backtracking on Cross-Axis Slopes

Many tracking PV systems avoid row-to-row shading by backtracking in morning and afternoon. Because the common single-axis backtracking implementation assumes the array is in a horizontal plane, it does not fully prevent row-to-row shading in arrays installed on cross-axis slopes, e.g. an east-west slope for a tracker with north-south axis alignment. This paper presents the simulated effect of reduced self-shading on annual production with two modified backtracking strategies. Depending on the array geometry and the steepness of the cross-axis grade, using a modified backtracking strategy improved annual yield by 3-10%.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Correlative nm-Scale Nonuniformity of Active Charge Carriers and Electrical Potential Along Both the Plane-View and Depth Directions in Group-V-Doped CdTe Thin Films: Preprint

We report nanometer-scale imaging on inhomogeneous distributions of active carrier and electrical potential in an As-doped CdTe film along both plane-view and film-depth directions. Despite Se grading, the SCM imaging does not show a clear variation of carrier concentration along the depth of the film. Instead, we observe carrier concentration variations of about 1 order of magnitude (high 1015 to low 1017/cm3) with inhomogeneous spatial regions ranging from a few hundred nm to a few ?m. This nonuniformity is distributed randomly in both the film lateral and vertical directions, independent of grain structure and GBs. We further mapped the surface potential using Kelvin probe force microscopy (KPFM). Higher potential was found on GBs, illustrating positive GB charging but not GB-specific carrier concentration. The results indicate that this suite of techniques can help identify nonuniform carrier concentration and potential fluctuations that can contribute to Voc deficits in GrV-doped CdTe devices.

CdTe thin film photovoltaics↗
DOE OSTI2021

Numerical Simulations of Time-Resolved Photoluminescence in CdSexTe1-x/CdTe Solar Cells

We present initial time-resolved photoluminescence (TRPL) simulations in graded CdSexTe1-e thin-film solar cells to quantify the front-interface recombination velocity, S int,front . Our model includes several composition dependences: bandgap energy, absorption coefficient, electron affinity, and carrier lifetime. Cathodoluminescence spectrum imaging measurements on bevels provide an estimate of the bandgap and the CdSe x Te 1-x alloy composition through the absorber thickness. TRPL decays are simulated as a function of the laser power, S int,front , front-interface band offset, and bulk Shockley-Read-Hall lifetime. We find the impact of S intf,ront on the PL decay increases as the band offset shifts from a "spike" to a "cliff". Recombination rate analysis shows that back-interface recombination could potentially dictate the later part of the TRPL decay "t 2" in high-lifetime CdSe x Te 1-x cells. We briefly discuss ongoing work to determine TRPL measurement conditions that maximize sensitivity to S itnt,front.

CdTe solar cells↗
DOE OSTI2020

Influence of Process Parameters and Absorber Thickness on Efficiency of Polycrystalline CdSeTe/CdTe Thin Film Solar Cells

Graded absorbers devices with with CdSe 0.4 Te 0.6 (molar basis) and CdTe were fabricated. CdCl 2 treatment time, post-deposition CdCl 2 anneal time and thicknesses of CdSeTe and CdTe layers were varied. Photoluminescence and electrical measurements were performed on the fabricated devices. Results revealed that the individual thicknesses of CdSeTe and CdTe is critical to overall efficiency of the devices. Device fabricated on substrate with 0.5 μm CdSeTe, 3 μm CdTe with rest of process parameters kept unchanged, produced an efficiency of 20.14%. We report highest device efficiency among academia and research institutions.

Shimpi, Tushar↗
DOE OSTI2022

FAIRification, Quality Assessment, and Missingness Pattern Discovery for Spatiotemporal Photovoltaic Data

The growth of the photovoltaic market has pushed the demand for power forecasting and performance evaluation for a huge population of PV power plants. Many of these power plants have spatiotemporal coherence that can be utilized for improving model accuracy. We have demonstrated in this paper the FAIRification of spatiotemporal PV time series data. Through the creation of a solar power plant ontology, we propose standards for the naming and structure of metadata used to describe the data from these power plants. Using the structure from this ontology, we have developed both R and Python packages for the automation of the FAIRification process. Going further, we have also developed an R package that automates the analysis of the quality of a data set through the designation of letter grades. To solve the issue of data missingness, we propose the use of St-GNN autoencoders to detect and impute missing values from a data set by utilizing data from power plants nearby.

14 SOLAR ENERGY↗
DOE OSTI2024

1.1 eV GaInAs Cell Development for Dual-Use Solar and 1070 nm Laser Power Converters

Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual-use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.

junctions↗
DOE OSTI2019

New Approach and Test Facility for High Field Accelerator Magnets R&D

This paper presents a new approach for developing and demonstrating high field magnet technology based on a magnet and test facility developed specifically for it. The traditional approach for carrying out high field magnet R&D has been building a new magnet to demonstrate a new design, new material or new technology. However, building a high field magnet is time consuming and expensive. To overcome this limitation, Brookhaven National Laboratory (BNL) built and successfully tested a 10 T Nb 3 Sn dipole DCC017 with large enough open or clear space (31 mm wide and 338 mm high) so that a pair of racetrack coils could be inserted into this opening without disassembling the magnet. The motivation be-hind this design was to facilitate a magnet R&D program where the new coils (with a large range in width and height accommodated) would reside in a high field region in direct contact with the existing coils (just as other magnet coils) and thus become an integral part of the magnet. We summarize the approach, the magnet, the test facility, past experiences, current and future test plans and planned up-grade. Here, the magnet facility is now available to service the needs of the wider community for testing cable and insert coils in a back-ground field of up to 10 T.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Development and First Test of the 15 T Nb$_3$Sn Dipole Demonstrator MDPCT1

Fermilab in the framework of the U.S. Magnet Devel-opment Program (MDP) has developed a Nb$_3$Sn dipole demonstrator for a post-LHC hadron collider. The magnet uses 60-mm aperture 4-layer shell-type graded coils. The cable in the two inner-most layers has 28 strands 1.0 mm in diameter and the cable in the two outermost layers has 40 strands 0.7 mm in diameter. An inno-vative mechanical structure based on aluminum I-clamps and a thick stainless steel skin is used to preload Nb$_3$Sn coils and support large Lorentz forces. The maximum field for this magnet is limited by 15 T due to mechanical considerations. The first magnet assembly was done with lower coil pre-load to achieve 14 T and minimize the risk of coil damage during assembly. This paper describes the magnet design and the details of its assembly procedure, and re-ports the results of its cold tests.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

First Field Measurements of the 15 T Nb 3 Sn Dipole Demonstrator MDPCT1

Within the US Magnet Development Program (MDP) a 15 T Nb 3 Sn dipole was developed, to demonstrate a magnet design for a post-LHC pp Collider. Specifically, the magnet design is based on 60 mm aperture 4-layer shell-type coils, graded between the inner and outer layers to maximize the magnet performance. The cable in the two innermost layers has 28 strands 1.0 mm in diameter and the cable in the two outermost layers has 40 strands 0.7 mm in diameter. Both cables use RRP Nb3Sn wires produced by Bruker-OST. Magnet coils are surrounded by vertically-split thick iron laminations, con-nected by aluminum I-clamps, and a thick stainless-steel skin. The magnet was tested at the Vertical Magnet Test Facility (VMTF) at Fermilab. This paper reports the first results of magnetic measure-ments of the 15 T Nb 3 Sn dipole demonstrator including geometrical harmonics, coil magnetization and iron saturation effects. The ex-perimental data are compared with the magnetic calculations.

43 PARTICLE ACCELERATORS↗