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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Intercalation of p-methycinnamic acid anion into Zn-Al layered double hydroxide to improve UV aging resistance of asphalt

A UV absorber, p-methycinnamic acid (PMCA), was intercalated into Zn-Al layered double hydroxide (LDH) by calcination recovery. Fourier transform infrared spectroscopy showed that the PMCA anions completely replaced the CO{sub 3}{sup 2−} anions in the interlayer galleries of Zn-Al-LDH containing PMCA anions (Zn-Al-PMCA-LDH). X-ray diffraction and transmission electron microscopy showed that the interlayer distance increased from 0.78 nm to 1.82 nm after the substitution of PMCA anions for CO{sub 3}{sup 2−} anions. The similar diffraction angles of the CO{sub 3}{sup 2−} anion-containing Zn-Al-LDH (Zn-Al-CO{sub 3}{sup 2−}-LDH) and the Zn-Al-CO{sub 3}{sup 2−}-LDH/styrene–butadiene–styrene (SBS) modified asphalt implied that the asphalt molecules do not enter into the LDH interlayer galleries to form separated-phase structures. The different diffraction angles of Zn-Al-PMCA-LDH and Zn-Al-PMCA-LDH/SBS modified asphalt indicated that the asphalt molecules penetrated into the LDH interlayer galleries to form an expanded-phase structure. UV-Vis absorbance analyses showed that Zn-Al-PMCA-LDH was better able to block UV light due to the synergistic effects of PMCA and Zn-Al-LDH. Conventional physical tests and atomic force microscopy images of the SBS modified asphalt, Zn-Al-CO{sub 3}{sup 2−}-LDH/SBS modified asphalt and Zn-Al-PMCA-LDH/SBS modified asphalt before and after UV aging indicated that Zn-Al-PMCA-LDH improved the UV aging resistance of SBS modified asphalts.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Nanoscale Periodic Modulations on Sodium Chloride Induced by Surface Charges

The sodium chloride surface is one of the most common platforms for the study of catalysts, thin film growth, and atmospheric aerosols. Here we report a nanoscale periodic modulation pattern on the surface of a cleaved NaCl single crystal, revealed by non-contact atomic force microscopy with a tuning fork sensor. The surface pattern shows two orthogonal domains, extending over the entire cleavage surface. The spatial modulations exhibit a characteristic period of 5.4 nm, along 110 crystallographic directions of the NaCl. The modulations are robust in vacuum, not affected by the tip-induced electric field or gentle annealing (<300 C); however, they are eliminated after exposure to water and an atomically flat surface can be recovered by subsequent thermal annealing after water exposure. A strong electrostatic charging is revealed on the cleavage surface which may facilitate the formation of the observed metastable surface reconstruction.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

SBA-15 mesoporous silica free-standing thin films containing copper ions bounded via propyl phosphonate units - preparation and characterization

The SBA-15 silica thin films containing copper ions anchored inside channels via propyl phosphonate groups are investigated. Such materials were prepared in the form of thin films, with hexagonally arranged pores, laying rectilinear to the substrate surface. However, in the case of our thin films, their free standing form allowed for additional research possibilities, that are not obtainable for typical thin films on a substrate. The structural properties of the samples were investigated by X-ray reflectometry, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The molecular structure was examined by Raman spectroscopy supported by numerical simulations. Magnetic measurements (SQUID magnetometry and EPR spectroscopy) showed weak antiferromagnetic interactions between active units inside silica channels. Consequently, the pores arrangement was determined and the process of copper ions anchoring by propyl phosphonate groups was verified in unambiguous way. Moreover, the type of interactions between magnetic atoms was determined. - Highlights: • Functionalized free-standing SBA-15 thin films were synthesized for a first time. • Thin films synthesis procedure was described in details. • Structural properties of the films were thoroughly investigated and presented. • Magnetic properties of the novel material was investigated and presented.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Cesium intercalation of graphene: A 2D protective layer on alkali antimonide photocathode

Alkali antimonide photocathodes have wide applications in free-electron lasers and electron cooling. The short lifetime of alkali antimonide photocathodes necessitates frequent replacement of the photocathodes during a beam operation. Furthermore, exposure to mediocre vacuum causes loss of photocathode quantum efficiency due to the chemical reaction with residual gas molecules. Theoretical analyses have shown that covering an alkali antimonide photocathode with a monolayer graphene or hexagonal boron nitride protects it in a coarse vacuum environment due to the inhibition of chemical reactions with residual gas molecules. Alkali antimonide photocathodes require an ultra-high vacuum environment, and depositing a monolayer 2D material on it poses a serious challenge. In the present work, we have incorporated a novel method known as intercalation, in which alkali atoms pass through the defects of a graphene thin film to create a photocathode material underneath. Initially, Sb was deposited on a Si substrate, and a monolayer graphene was transferred on top of the Sb film. Heat cleaning around 550–600 °C effectively removed the Sb oxides, leaving metallic Sb underneath the graphene layer. Depositing Cs on top of a monolayer graphene enabled the intercalation process. Atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, low energy electron microscopy, and x-ray diffraction measurements were performed to evaluate photocathode formation underneath the monolayer graphene. Our analysis shows that Cs penetrated the graphene and reacted with Sb and formed Cs 3 Sb.

2D materials↗
DOE OSTI2022

Scattering-type scanning near-field optical microscopy with Akiyama piezo-probes

Recent developments of the scattering-type scanning near-field optical microscope at cryogenic temperatures (cryogenic s-SNOM or cryo-SNOM) have led to many breakthroughs in the studies of low energy excitations in quantum materials. However, the simultaneous demands on vibration isolation, low base temperature, precise nano-positioning, and optical access make the construction of a cryo-SNOM a daunting task. Adding to the overhead space required for a cryo-SNOM is the atomic force microscopy control, which predominantly utilizes a laser-based detection scheme for determining the cantilever tapping motion. In this work, we provide an alternative and straightforward route to performing s-SNOM using metal-coated Akiyama probes, where the cantilever tapping motion is detected through a piezoelectric signal. We show that the Akiyama-based cryo-SNOM attains high spatial resolution, good near-field contrast, and is able to perform imaging with a significantly more compact system compared to other cryo-SNOM implementations. Our results firmly establish the potential of s-SNOM based on self-sensing piezo-probes, which can easily accommodate far-infrared wavelengths and high magnetic fields in the future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Phase and microphase separation of polymer thin films dewetted from silicon - a spin-echo resolved grazing incidence neutron scattering study.

An understanding of the structure of ultrathin polymer films on solid substrates has scientific importance in applications as well as in fundamental studies of polymer diffusion or adsorption. We present studies of the organization of dewetted droplets of polymers on a silicon surface using a new neutron scattering technique, spin-echo resolved grazing incidence scattering (SERGIS), that has the potential to address at the same time the droplet-droplet correlations and the chemical configuration inside each droplet. For the seminal experiments, the polarized neutron reflectometer EVA at the Institut Laue-Langevin, Grenoble, France, was equipped with a spin-echo setup, and measurements were taken on surface structures previously characterized by different techniques. The dewetted polymers used in our studies were pure polystyrene, a mixture of polystyrene and polyparamethylstyrene, and a diblock copolymer of the two homopolymers. Even with a provisional setup SERGIS, we were able to determine the correlation between the droplets, providing results in excellent agreement with those obtained by atomic force microscopy and grazing incidence small-angle X-ray and neutron scattering. In addition, it was confirmed that the correlation function for diblock copolymer droplets is more complex than for polymer mixtures, exhibiting partial ordering of the copolymer within each droplet.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Structural and optical studies on AgSbSe{sub 2} thin films

AgSbSe{sub 2} semiconducting thin films are successfully deposited using reactive evaporation technique at a substrate temperature of 398K. X-ray diffraction studies reveal that the films are polycrystalline in nature. The structural parameters such as average particle size, dislocation density, and number of crystallites per unit have been evaluated. Atomic Force Microscopy is used to study the topographic characteristics of the film including the grain size and surface roughness. The silver antimony selenide thin films have high absorption coefficient of about 10{sup 5} cm{sup −1} and it has an indirect band gap of 0.64eV.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Model based control of dynamic atomic force microscope

A model-based robust control approach is proposed that significantly improves imaging bandwidth for the dynamic mode atomic force microscopy. A model for cantilever oscillation amplitude and phase dynamics is derived and used for the control design. In particular, the control design is based on a linearized model and robust H{sub ∞} control theory. This design yields a significant improvement when compared to the conventional proportional-integral designs and verified by experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Measurement of ablation threshold of oxide-film-coated aluminium nanoparticles irradiated by femtosecond laser pulses

We report the results of experiments on estimation of femtosecond laser threshold intensity at which nanoparticles are removed from the substrate surface. The studies are performed with nanoparticles obtained by femtosecond laser ablation of pure aluminium in distilled water. The attenuation (or extinction, i.e. absorption and scattering) spectra of nanoparticles are measured at room temperature in the UV and optical wavelength ranges. The size of nanoparticles is determined using atomic force microscopy. A new method of scanning photoluminescence is proposed to evaluate the threshold of nanoparticle removal from the surface of a glass substrate exposed to IR femtosecond laser pulses with intensities 10{sup 11} – 10{sup 13} W cm{sup -2}. (interaction of laser radiation with matter)

36 MATERIALS SCIENCE↗
DOE OSTI2019

Study of the Crack Resistance of Microarc Oxidation Coatings after Laser Doping with Zirconium Oxide

In this paper we present the results of a study of crack resistance of a microarc oxidation coating (MAO) after laser doping with zirconium oxide. Crack resistance was determined by indentation with imprint imaging using atomic force microscopy. Laser doping with zirconium oxide was established to lead to a significant hardening of the MAO coating. The stress intensity factor increases by a factor of 2.7 while surface damage decreases by a factor of 2 compared with the initial MAO coating.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Immobilization of [60]fullerene on silicon surfaces through a calix[8]arene layer

In this work, we report the functionalization of flat Si(100) surfaces with a calix[8]arene derivative through a thermal hydrosilylation process, followed by docking with [60]fullerene. Chemical grafting of calix[8]arene on silicon substrates was evaluated by X-ray photoelectron spectroscopy, whereas host-guest immobilization of fullerene was demonstrated by atomic force microscopy and sessile drop water contact angle measurements. Surface topographical variations, modelled on the basis of calix[8]arene and [60]fullerene geometrical parameters, are consistent with the observed morphological features relative to surface functionalization and to non-covalent immobilization of [60]fullerene.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Dry etching techniques for active devices based on hexagonal boron nitride epilayers

Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Atomic layer deposition of magnesium fluoride via bis(ethylcyclopentadienyl)magnesium and anhydrous hydrogen fluoride

A new process has been developed to deposit magnesium fluoride (MgF{sub 2}) thin films via atomic layer deposition (ALD) for use as optical coatings in the ultraviolet. MgF{sub 2} was deposited in a showerhead style ALD reactor using bis(ethylcyclopentadienyl)magnesium and anhydrous hydrogen fluoride (HF) as precursors at substrate temperatures from 100 to 250 °C. The use of HF was observed to result in improved morphology and reduced impurity content compared to other reported MgF{sub 2} ALD approaches that use metal fluoride precursors as the fluorine-containing chemistry. Characterization of these films has been performed using spectroscopic ellipsometry, atomic force microscopy, and x-ray photoelectron spectroscopy for material deposited on silicon substrates. Films at all substrate temperatures were transparent at wavelengths down to 190 nm and the low deposition temperature combined with low surface roughness makes these coatings good candidates for a variety of optical applications in the far ultraviolet.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Electrical characteristics of Au/n-GaAs structures with thin and thick SiO{sub 2} dielectric layer

The aim of this study, to explain effects of the SiO{sub 2} insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 A) and thick (250 A) SiO{sub 2} insulator layers were deposited on n-type GaAs substrates using the plasma enganced chemical vapour deposition technique. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been carried out at room temperature. The main electrical parameters, such as ideality factor (n), zero-bias barrier height ({phi}{sub Bo}), series resistance (R{sub s}), leakage current, and interface states (N{sub ss}) for Au/SiO{sub 2}/n-GaAs SBDs have been investigated. Surface morphologies of the SiO{sub 2} dielectric layer was analyzed using atomic force microscopy. The results show that SiO{sub 2} insulator layer thickness very affects the main electrical parameters. Au/n-GaAs SBDs with thick SiO{sub 2} insulator layer have low leakage current level, small ideality factor, and low interface states. Thus, Au/n-GaAs SBDs with thick SiO{sub 2} insulator layer shows better diode characteristics than other.

36 MATERIALS SCIENCE↗