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At least 1,081 records · Page 60

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NASA NTRS1979

Thin sheets of energetic electrons upstream from the earth's bow shock

ISEE spacecraft observations show that energetic (not less than 16 keV) electrons are injected into the region upstream from the earth's bow shock in a thin sheet which lies just behind the sheet of interplanetary magnetic field lines that are tangent to the shock surface. Lower energy electrons leave the shock over a much broader region. Although the energetic electron intensity varies, the sheet is nearly always present and may be a quasi-steady state feature of the bow shock. The electron velocity distribution in the thin sheet is strongly peaked and is responsible for excitation of electron plasma waves.

Anderson, K. A.↗

NASA NTRS1978

Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

Yeh, Y. C. M.↗

NASA NTRS1979

Strong thin membrane structure

A continuous process is described for producing strong lightweight structures for use as solar sails for spacecraft propulsion by radiation pressure. A thin reflective coating, such as aluminum, is applied to a rotating cylinder. A nylon mesh, applied over the aluminum coating, is then coated with a polymerizing material such as a para-xylylene monomer gas to polymerize as a film bound to the mesh and the aluminum. An emissivity increasing material such as chromium or silicon monoxide is applied to the polymer film to disperse such material colloidally into the growing polymer film, or to the final polymer film. The resulting membrane structure is then removed from the cylinder. Alternately, the membrane structure can be formed by etching a substrate in the form of an organic film such as a polymide, or a metal foil, to remove material from the substrate and reduce its thickness. A thin reflective coating (aluminum) is applied on one side of the substrate, and an emissivity increasing coating is applied on the reverse side of the substrate.

Frazer, R. E.↗

NASA NTRS1980

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Vonross, O.↗

NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗

NASA NTRS1980

Single-mode laser studies: Design and performance of a fixed-wave length source and coupling of lasers to thin-film optical waveguides

A module developed for the generation of a stable single wavelength to be used for a fiber optic multiplexing scheme is described. The laser is driven with RZ pulses, and the temperature is stabilized thermoelectrically. The unit is capable of maintaining a fixed wavelength within about 6 A as the pulse duty cycle is changed between 0 and 100 percent. This is considered the most severe case, and much tighter tolerances are obtainable for constant input power coding schemes. Using a constricted double heterostructure laser, a wavelength shift of 0.083 A mA is obtained due to laser self-heating by a dc driving current. The thermoelectric unit is capable of maintaining a constant laser heat-sink temperature within 0.02 C. In addition, miniature lenses and couplers are described which allow efficient coupling of single wavelength modes of junction lasers to thin film optical waveguides. The design of the miniature cylinder lenses and the prism coupling techniques allow 2 mW of single wavelength mode junction laser light to b coupled into thin film waveguides using compact assemblies. Selective grating couplers are also studied.

Ladany, I.↗

NASA NTRS1980

The optically thin dust shell of Nova Cygni 1978

Nova Cygni 1978 was monitored photometrically from V to 19.5 microns for 120 days after the eruption. Following the initial expansion of the hot gas shell, an optically thin dust shell formed and reached a maximum visual optical depth of about 0.1 by day 60. No visible transition phase of the type observed in the very dusty DQ Herculis novae occurred in Nova Cygni 1978. It is argued that dust grain growth was inhibited because of the low mass of condensable atoms in the shell. Although the dust shell in Nova Cygni 1978 was optically thin at visual and infrared wavelengths, the grains grew to a radius of 0.3 micron which is comparable to the radius of the grains which grow in the optically thick shells of the DQ Herculis type novae.

Gehrz, R. D.↗

NASA NTRS1980

Development of a high efficiency thin silicon solar cell

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Storti, G.↗

NASA NTRS1980

Thin-layer approximation for three-dimensional supersonic corner flows

The thin-layer approximation is extended to an axial corner that is formed by the intersection of two perpendicular plates, one of which has an inclination angle with respect to the free stream. A computer code developed by Hung and MacCormack (1978) is modified for the thin-layer approximation, and a case with Mach 5.9 and a wedge angle of 6 deg is computed. In addition, it is shown that it is not necessary to solve the complete Navier-Stokes equations for a three-dimensional high-Reynolds-number corner flow.

Hung, C. M.↗

NASA NTRS1981

Effect of elastic end rings on the eigenfrequencies of thin cylinders

The effect of elastic end rings on the eigenfrequencies of thin cylindrical shells is studied by using an exact solution of the linear eigenvalue problem. The out-of-plane and torsional rigidities of the rings are responsible for the overall shell stiffness. Considerable mode interaction exists for modes with low circumferential wave numbers when the mass of the ring is comparable with that of the shell. The hypothetical simply supported and clamped boundary conditions are practically impossible to realize with a finite-mass ring for relatively short and thin shells.

El Raheb, M.↗

NASA NTRS1981

Some approximations in the linear dynamic equations of thin cylinders

Theoretical analysis is performed on the linear dynamic equations of thin cylindrical shells to find the error committed by making the Donnell assumption and the neglect of in-plane inertia. At first, the effect of these approximations is studied on a shell with classical simply supported boundary condition. The same approximations are then investigated for other boundary conditions from a consistent approximate solution of the eigenvalue problem. The Donnell assumption is valid at frequencies high compared with the ring frequencies, for finite length thin shells. The error in the eigenfrequencies from omitting tangential inertia is appreciable for modes with large circumferential and axial wavelengths, independent of shell thickness and boundary conditions.

El-Raheb, M.↗

NASA NTRS1982

Fabricating Thin-Film High-Temperature Thermoset Resins

To prepare an epoxy thin film, quantity of uncured epoxy to be cast placed in vacuum oven and heated to melting temperature. Vacuum of about 30 mm Hg is applied to deaerate epoxy charge. Pressure is cycled with each foaming until all air and excess volatiles are revoved. thermoset (cross-linked) resin is cast between thin, flexible, releasing substrate films. Films less than 0.025 mm in thickness are made routinely with this facility.

Dickerson, G. E.↗

NASA NTRS1981

Biaxial and electrostatic tensioning effects on thin membrane materials

Thin membrane materials were subjected to biaxial and electrostatic tensioning loads to study techniques for maintaining surface smoothness of a thin membrane antenna. The basic mechanical and electrical setup for the tests is described and preliminary measurements of surface smoothness and surface deviation are presented.

Hinson, W. F.↗

NASA NTRS1982

A tutorial solution to scattering of radiation in a thin atmosphere bounded below by a diffusely reflecting, absorbing surface

A simple tutorial method, based on a photon tracking procedure, is described to determine the spherical albedo for a thin atmosphere overlying a reflecting surface. This procedure is used to provide a physical structure with which to interpret the more detailed but highly mathematical analyses presented. The final equations are shown to be in good numerical agreement with more exact solutions for thin atmospheres.

Buglia, J. J.↗

NASA NTRS1982

A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

Bujor, M.↗

NASA NTRS1981

Epitaxial thin film GaAs solar cells using OM-CVD techniques

A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

Stirn, R. J.↗

NASA NTRS1982

Thin film concentrator panel development

The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

Zimmerman, D. K.↗

NASA NTRS1982

Microhardness studies on thin carbon films grown on P-type, (100) silicon

A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

Kolecki, J. C.↗