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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Size dependence of magnetization switching and its dispersion of Co/Pt nanodots under the assistance of radio frequency fields

We have studied the dot size dependence of microwave assisted magnetization switching (MAS) on perpendicular magnetic Co/Pt multilayer dot array. The significant microwave assistance effect has been observed over the entire dot size D ranging from 50 nm to 330 nm examined in the present study. The MAS behavior, however, critically depends on D. The excitation frequency dependence of the switching field is well consistent with the spin wave theory, indicating that the magnetization precession in MAS is in accordance with the well defined eigenmodes depending on the dot diameter. The lowest order spin wave is only excited for D ≤ 100 nm, and then the MAS effect is well consistent with that of the single macrospin prediction. On the other hand, higher order spin waves are excited for D > 100 nm, giving rise to the significant enhancement of the MAS effect. The dispersion of MAS effect also depends on D and is significantly reduced for the region of D > 100 nm. This significant reduction of the dispersion is attributed to the essential feature of the MAS effect which is insensitive to the local fluctuation of anisotropy field, such as defect, damaged layer, and so on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of Cu doping on the resistive switching of NiO thin films

Bipolar resistive switching is observed in the GaIn/Cu:NiO film/ITO device with active layer deposited by sol-gel spin-coating. The first-principles calculations indicate that Cu dopants with valence of +1 are located at the substitutional Ni sites rather than the interstitial ones. Cu doping introduces more oxygen vacancies in the film and increases the carrier mobility, however, excessive Cu dopants may assemble at the grain boundary resulting in larger set voltage. Current–voltage measurements indicate that the trap charge limited and space charge limited conduction dominate the high resistance state, while the low resistance state follows the Ohmic mechanism. The switching is attributed to the formation/rupture of oxygen vacancy filaments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetization switching and inverted hysteresis in perpendicular antiferromagnetic superlattices

The magnetization of antiferromagnetic (AFM) superlattices as a function of applied field was investigated using Monte Carlo simulations. The simulated hysteresis loops of systems with N magnetic layers with AFM coupling between the layers exhibit distinct steps with magnetization that decreases with increasing N . Systems with odd N exhibit 3 steps and inverted hysteresis for N > 3, whereas systems with even N exhibit 4 steps, for N > 2, and their microscopic switching sequence is non-deterministic and can take two distinct pathways, even though the switching of the global magnetization is exactly reversible. Here, magnetic superlattice structures are attractive for the development of meta-materials with unique properties. In antiferromagnetic (AFM) multilayer structures, where ferromagnetic (FM) layers are coupled antiferromagnetically and the strength of the inter-layer interaction is on the order of the Zeeman energy, meta-magnetic transitions can be induced by moderate magnetic fields. In such systems, the properties can be easily tuned by modifying the inter-layer interactions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Ferroelectric switching in epitaxial GeTe films

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Optimization of spin-torque switching using AC and DC pulses

We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Helium in chirped laser fields as a time-asymmetric atomic switch

Tuning the laser parameters exceptional points in the spectrum of the dressed laser helium atom are obtained. The weak linearly polarized laser couples the ground state and the doubly excited P-states of helium. We show here that for specific chirped laser pulses that encircle an exceptional point one can get the time-asymmetric phenomenon, where for a negative chirped laser pulse the ground state is transformed into the doubly excited auto-ionization state, while for a positive chirped laser pulse the resonance state is not populated and the neutral helium atoms remains in the ground state as the laser pulse is turned off. Moreover, we show that the results are very sensitive to the closed contour we choose. This time-asymmetric state exchange phenomenon can be considered as a time-asymmetric atomic switch. The optimal time-asymmetric switch is obtained when the closed loop that encircles the exceptional point is large, while for the smallest loops, the time-asymmetric phenomenon does not take place. A systematic way for studying the effect of the chosen closed contour that encircles the exceptional point on the time-asymmetric phenomenon is proposed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear coupling between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Light-controlled resistive switching of ZnWO{sub 4} nanowires array

ZnWO{sub 4} nanowires array was prepared on the titanium substrate by a facile hydrothermal synthesis, in which the average length of ZnWO{sub 4} nanowires is about 2um and the diameter of individual ZnWO{sub 4} nanowire ranges from 50 to 70 nm. The bipolar resistive switching effect of ZnWO{sub 4} nanowires array was observed. Moreover, the performance of the resistive switching device is greatly improved under white light irradiation compared with that in the dark.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Voltage switching of a VO{sub 2} memory metasurface using ionic gel

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-Q silica zipper cavity for optical radiation pressure driven MOMS switch

We design a silica zipper cavity that has high optical and mechanical Q (quality factor) values and demonstrate numerically the feasibility of a radiation pressure driven micro opto-mechanical system (MOMS) directional switch. The silica zipper cavity has an optical Q of 4.0 × 10{sup 4} and an effective mode volume V{sub mode} of 0.67λ{sup 3} when the gap between two cavities is 34 nm. The mechanical Q (Q{sub m}) is determined by thermo-elastic damping and is 2.0 × 10{sup 6} in a vacuum at room temperature. The opto-mechanical coupling rate g{sub OM} is as high as 100 GHz/nm, which allows us to move the directional cavity-waveguide system and switch 1550-nm light with 770-nm light by controlling the radiation pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Resistance switching in epitaxial SrCoO{sub x} thin films

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition

We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications

We model, using the macrospin approximation, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques (SOTs) generated by short (≤0.5 ns) current pulses applied to the nanostrip, to examine the potential for SOT-based fast, efficient cryogenic memory. Due to thermal fluctuations, if solely an anti-damping torque is applied, then, for a device with sufficiently low anisotropy (H{sub anis}{sup 0} ∼ 1 kOe) suitable for application in cryogenic memory, a high magnetic damping parameter (α∼0.1−0.2) is required for reliable switching over a significant variation of pulse current. The additional presence of a substantial field-like torque improves switching reliability even for low damping (α≤0.03).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Switching between ground and excited states by optical feedback in a quantum dot laser diode

We demonstrate switching between ground state and excited state emission in a quantum-dot laser subject to optical feedback. Even though the solitary laser emits only from the excited state, we can trigger the emission of the ground state by optical feedback. We observe recurrent but incomplete switching between the two emission states by variation of the external cavity length in the sub-micrometer scale. We obtain a good qualitative agreement of experimental results with simulation results obtained by a rate equation that accounts for the variations of the feedback phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Polarization induced resistance switching effect in ferroelectric vinylidene-fluoride/trifluoroethylene copolymer ultrathin films

We observed a clear polarization reversal-induced resistance switching effect in ferroelectric Vinylidene-fluoride (VDF)/Trifluoroethylene (TrFE) copolymer thin films. Pt and Au were used as the bottom and top electrodes, respectively, and the thickness of the VDF/TrFE copolymer film was adjusted to be 10 nm. The conduction current was 100 times higher in the case of the spontaneous polarization of the VDF/TrFE film towards the Au electrode than that in the case of the opposite direction. This resistance switching was confirmed to be reproducible after 10 successive polarization reversals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Coplanar switching of polarization in thin films of vinylidene fluoride oligomers

Switching characteristics of vinylidene fluoride oligomer thin films with molecular chains aligned normal to the substrate and exhibiting a preferential in-plane polarization have been investigated using coplanar geometry of inter-digital electrodes via high-resolution piezoresponse force microscopy. It has been shown that in-plane switching proceeds via non-180° rotation of dipoles mediated by non-stochastic nucleation, expansion, and coalescence of domains. As-grown multidomain configuration is found to be strongly pinned aided by charged domain walls, and the electrically induced (in-plane) mono-domain states relax to the as-grown state. The observed coercive field (approximately 0.6 MV/m) is two to three orders of magnitude smaller than that for the oligomer films with out-of-plane polarization. It is suggested that the low steric hindrance to the rotation of molecular dipoles gives rise to the observed low coercive field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗