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At least 1,081 records · Page 60

Enhanced photoluminescence of SrWO{sub 4}:Eu{sup 3+} red phosphor synthesized by mechanochemically assisted solid state metathesis reaction method at room temperature

Optically efficient europium activated alkaline earth metal tungstate nano phosphor (SrWO{sub 4}) with different doping concentrations have been synthesized by mechanochemically assisted solid state metathesis reaction at room temperature for the first time. The XRD and Raman spectra results indicated that the prepared powders exhibit a scheelite-type tetragonal structure. FTIR spectra exhibited a high absorption band situated at around 854 cm{sup −1}, which was ascribed to the W–O antisymmetric stretching vibrations into the [WO{sub 4}]{sup 2−} tetrahedron groups. Analysis of the emission spectra with different Eu{sup 3+} concentrations revealed that the optimum dopant concentration for SrWO{sub 4}: x Eu{sup 3+} phosphor is about 8 mol% of Eu{sup 3+}.The red emission intensity of the SSM prepared SrWO{sub 4}: 0.08Eu{sup 3+} phosphors are 2 times greater than that of the commercial Y{sub 2}O{sub 2}S: Eu{sup 3+} red phosphor prepared by the conventional solid state reaction method. All the results indicate that the phosphor is a promising red phosphor pumped by NUV InGaN chip for fabricating WLED.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room temperature optical and dielectric properties of Sr and Ni doped lanthanum ferrite nanoparticles

Strontium and nickel doped lanthanum ferrite (LaFeO{sub 3}) nanoparticles (NPs) were prepared reverse micelle (RM) and calcinated at 700°C. Microstructural studies were carried by XRD and SEM/EDS techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible spectroscopy and band gap energy was estimated 3.89 eV. Room temperature dielectric constant (ε’) decreases abruptly at lower frequencies owing to the charge transport relaxation time. The observed behavior of the dielectric properties can be attributed on the basis of Koop’s theory based on Maxwell-Wagner’s two layer model in studied nanoparticles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

Zn{sub 1-x}Mg{sub x}O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could be attributed to decrease of oxygen vacancies present in host nanoparticles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Near room temperature giant magnetodielectricity in BiFeO{sub 3}/CoFe{sub 2}O{sub 4} composite

Here we report near room temperature giant magnetodielectric observed in BiFeO{sub 3}/CoFe{sub 2}O{sub 4} composite. This composite is prepared in slightly un-conventional method involving sol-gel auto combustion route. Phase purity has been confirmed by Reitweld refinement of powder x-ray diffraction data. Highest magnetodielectric (in %) of 62% is seen at 320K. Most interesting, in the temperature range (300 – 350K) of measurement, magnetodielectric has not gone below 50%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room-temperature ferromagnetism in Cr-doped Si achieved by controlling atomic structure, Cr concentration, and carrier densities: A first-principles study

By using first-principles calculations, we investigated how to achieve a strong ferromagnetism in Cr-doped Si by controlling the atomic structure and Cr concentration as well as carrier densities. We found that the configuration in which the Cr atom occupies the tetrahedral interstitial site can exist stably and the Cr atom has a large magnetic moment. Using this doping configuration, room-temperature ferromagnetism can be achieved in both n-type and p-type Si by tuning Cr concentration and carrier densities. The results indicate that the carrier density plays a crucial role in realizing strong ferromagnetism in diluted magnetic semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Thermodynamic understanding of Sn whisker growth on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging

Sn whiskers are observed by scanning electron microscope on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging. Only Cu{sub 6}Sn{sub 5} phase appears in the X-ray diffraction patterns and no Sn element is detected in the Cu sublayer by scanning transmission electron microscopy. Based on the interfacial thermodynamics, the intermetallic Cu{sub 6}Sn{sub 5} compound phase may form directly at the Sn grain boundary. Driven by the stress gradient during the formation of Cu{sub 6}Sn{sub 5} compound at Sn grain boundaries, Sn atoms segregate onto the Cu surface and accumulate to form Sn whisker.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Growth of residual stress-free ZnO films on SiO{sub 2}/Si substrate at room temperature for MEMS devices

ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO{sub 2}/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 10{sup 9} to 11.28 x 10{sup 9} dyne/cm{sup 2} with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ∼3.275 eV to ∼3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

36 MATERIALS SCIENCE↗

Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Charge transport studies in donor-acceptor block copolymer PDPP-TNT and PC71BM based inverted organic photovoltaic devices processed in room conditions

Diketopyrrolopyrole-naphthalene polymer (PDPP-TNT), a donor-acceptor co-polymer, has shown versatile behavior demonstrating high performances in organic field-effect transistors (OFETs) and organic photovoltaic (OPV) devices. In this paper we report investigation of charge carrier dynamics in PDPP-TNT, and [6,6]-phenyl C{sub 71} butyric acid methyl ester (PC71BM) bulk-heterojunction based inverted OPV devices using current density-voltage (J-V) characteristics, space charge limited current (SCLC) measurements, capacitance-voltage (C-V) characteristics, and impedance spectroscopy (IS). OPV devices in inverted architecture, ITO/ZnO/PDPP-TNT:PC71BM/MoO{sub 3}/Ag, are processed and characterized at room conditions. The power conversion efficiency (PCE) of these devices are measured ∼3.8%, with reasonably good fill-factor 54.6%. The analysis of impedance spectra exhibits electron’s mobility ∼2 × 10{sup −3} cm{sup 2}V{sup −1}s{sup −1}, and lifetime in the range of 0.03-0.23 ms. SCLC measurements give hole mobility of 1.12 × 10{sup −5} cm{sup 2}V{sup −1}s{sup −1}, and electron mobility of 8.7 × 10{sup −4} cm{sup 2}V{sup −1}s{sup −1}.

36 MATERIALS SCIENCE↗

Room temperature ferromagnetism in liquid-phase pulsed laser ablation synthesized nanoparticles of nonmagnetic oxides

Intrinsic Room Temperature Ferromagnetism (RTF) has been observed in undoped/uncapped zinc oxide and titanium dioxide spherical nanoparticles (NPs) obtained by a purely green approach of liquid phase pulsed laser ablation of corresponding metal targets in pure water. Saturation magnetization values observed for zinc oxide (average size, 9 ± 1.2 nm) and titanium dioxide (average size, 4.4 ± 0.3 nm) NPs are 62.37 and 42.17 memu/g, respectively, which are several orders of magnitude larger than those of previous reports. In contrast to the previous works, no postprocessing treatments or surface modification is required to induce ferromagnetism in the case of present communication. The most important result, related to the field of intrinsic ferromagnetism in nonmagnetic materials, is the observation of size dependent ferromagnetism. Degree of ferromagnetism in titanium dioxide increases with the increase in particle size, while it is reverse for zinc oxide. Surface and volume defects play significant roles for the origin of RTF in zinc oxide and titanium dioxide NPs, respectively. Single ionized oxygen and neutral zinc vacancies in zinc oxide and oxygen and neutral/ionized titanium vacancies in titanium dioxide are considered as predominant defect centres responsible for observed ferromagnetism. It is expected that origin of ferromagnetism is a consequence of exchange interactions between localized electron spin moments resulting from point defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature

The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO{sub 2}/Nb:SrTiO{sub 3}. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO{sub 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ε{sub 2}) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Room temperature spin injection into (110) GaAs quantum wells using Fe/x-AlO{sub x} contacts in the regime of current density comparable to laser oscillation

We investigate the electrical spin injection into (110) GaAs single quantum wells (SQWs) and multiple quantum wells (MQWs) using light-emitting diodes (LEDs) having Fe/crystalline-AlO{sub x} (x-AlO{sub x}) tunnel barrier contacts. A degree of circular polarization (P{sub c}) of 5.0% is obtained for the SQW LED at 4 K with the current density of 1 kA/cm{sup 2} which is comparable to that for the laser oscillation in vertical-cavity surface-emitting lasers (VCSELs). On the basis of electron spin relaxation time and carrier lifetime in the (110) GaAs SQW measured by time-dependent photoluminescence and the value of P{sub c} = 5.0%, the degree of spin polarization of initially injected electrons (P{sub 0}) in the SQW is estimated to be 6.6% at 4 K. By using the MQW LED having a much stronger electroluminescence, a P{sub c} value of 2.6% is obtained at room temperature (RT) with the current density of 1.5 kA/cm{sup 2}. The temperature and current density dependences of P{sub c} are found to be weak in both the SQW and MQW LEDs. The estimated P{sub 0} of 9.3% at RT suggests that the Fe/x-AlO{sub x} contacts can be used for the RT electrical spin injection for spin-controlled VCSELs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Terahertz pulsed photogenerated current in microdiodes at room temperature

Space-charge modulation of the current in a vacuum diode under photoemission leads to the formation of beamlets with time periodicity corresponding to THz frequencies. We investigate the effect of the emitter temperature and internal space-charge forces on the formation and persistence of the beamlets. We find that temperature effects are most important for beam degradation at low values of the applied electric field, whereas at higher fields, intra-beamlet space-charge forces are dominant. The current modulation is most robust when there is only one beamlet present in the diode gap at a time, corresponding to a macroscopic version of the Coulomb blockade. It is shown that a vacuum microdiode can operate quite well as a tunable THz oscillator at room temperature with an applied electric field above 10 MV/m and a diode gap of the order of 100 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗