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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Solid state amorphization of metastable Al 0.5 TiZrPdCuNi high entropy alloy investigated by high voltage electron microscopy

Here, the phase stability of high entropy alloy (HEA), Al 0.5 TiZrPdCuNi, under fast electron irradiation was studied by in-situ high voltage electron microscopy (HVEM). The initial phase of this alloy quenched from the melt was dependent on cooling rate. At high cooling rates an amorphous phase was obtained, whereas a body-centered cubic ( b.c.c. ) phase were obtained at low cooling rates. By thermal crystallization of the amorphous phase b.c.c. phase nano-crystals were formed. Upon fast electron irradiation solid state amorphization (SSA) was observed in b.c.c. phase regardless of the initial microstructure (i.e., “coarse crystalline structure” or “nano-crystalline structure with grain boundaries as a sink for point defects”). SSA behavior in the Al 0.5 TiZrPdCuNi HEAs was investigated by in-situ transmission electron microscopy observations. Because the amorphization is very rarely achieved in a solid solution phase under fast electron irradiation in common metallic materials, this result suggests that the Al 0.5 TiZrPdCuNi HEA from other common alloys and the other HEAs. The differences in phase stability against the irradiation between the Al 0.5 TiZrPdCuNi HEA and the other HEAs were discussed. This is the first experimental evidence of SSA in HEAs stimulated by fast electron irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The role of Cr concentration and temperature on cavity swelling with co-injected helium in dual-ion irradiated Fe and Fe-Cr alloys

The level of chromium plays an essential role in irradiation tolerance of Fe-Cr ferritic alloys. However, conflicting results have been reported regarding the dependence of cavity swelling under irradiation on Cr level and temperature. Here, we have performed a comprehensive set of simultaneous dual-ion (Ni + He) irradiations to high dose (~30 displacements per atom, dpa) at 400–550 °C on a series of ultra-high purity Fe and Fe-Cr binary alloys (3–14 wt.%Cr). Helium co-implantation rates of 0.1 and 10 appm He/dpa were selected to examine He synergistic effects relevant for fission and fusion reactor conditions, respectively. Cavities were observed in all irradiated samples by transmission electron microscopy. The results show that higher He implantation rate causes a shift in the swelling peak to higher temperatures in both Fe and Fe-Cr alloys. When assuming smaller cavities as biased sinks, the non-monotonic nature of the cavity swelling behavior is related to the ratio of biased to unbiased point defect sink strengths. Cr-enriched precipitates were observed in Fe-14Cr irradiated at 400 °C by atom probe tomography. Our analysis suggests the formation of Cr-enriched precipitates could suppress cavity swelling for Fe-Cr alloys with Cr content above 10 wt%.

36 MATERIALS SCIENCE↗
DOE OSTI2011

High-temperature stability of {alpha}-Ta{sub 4}AlC{sub 3}

Graphical abstract: In this study, stability of {alpha}-Ta{sub 4}AlC{sub 3} is investigated to test a hypothesized thermodynamically driven {alpha}-{beta} phase transformation. It is found that the {alpha} phase is stable up to 1600 {sup o}C, with impurities and point defects most likely increasing the stability of the {alpha}-Ta{sub 4}AlC{sub 3}. Highlights: {yields} Cold-pressed {alpha}-Ta{sub 4}AlC{sub 3} powders are annealed up to 1750 {sup o}C to test first-principles predictions of {alpha}-{beta} phase-stability reversal at 1600 {sup o}C. {yields} The {alpha}-Ta{sub 4}AlC{sub 3} samples are stable up to 1600 {sup o}C, with no indications of any {alpha}-{beta} transformation. {yields} Transmission electron microscopy shows zig-zag stacking sequence characteristic of {alpha}-Ta{sub 4}AlC{sub 3}, as well as tantalum oxide impurities. {yields} The XRD patterns suggest that defects such as vacancies or antisites may increase the stability of {alpha}-Ta{sub 4}AlC{sub 3}. -- Abstract: Cold-pressed {alpha}-Ta4AlC3 powders were annealed up to 1750 {sup o}C to test first-principles predictions of {alpha}-{beta} phase-stability reversal at 1600 {sup o}C. Up to 1600 {sup o}C, the {alpha}-Ta{sub 4}AlC{sub 3} samples were stable with no indications of any {alpha}-{beta} transformation, as shown by the strong characteristic X-ray diffraction peaks of {alpha}-Ta{sub 4}AlC{sub 3} and the zigzag stacking observed by transmission electron microscopy. These results show that, in this experimental situation, high temperature alone is not sufficient to cause the {alpha}-{beta} transformation.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Effects of Se substitution on the thermoelectric performance of n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x} skutterudites

Highlights: ► The simple solid state reaction technique was employed to prepare Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x} skutterudites. ► The thermal conductivity decreases gradually with the increasing Se content. ► Doping with moderate Se is an effective way to enhance the thermoelectric performance of Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x}. ► The highest ZT of 1.11 at 800 K is obtained for the Co{sub 4}Sb{sub 11.3}Te{sub 0.58}Se{sub 0.12} sample. -- Abstract: A series of double-substituted Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x} skutterudites have been fabricated by combining the solid state reaction and the spark plasma sintering method, and the effects of Se substitution on the thermoelectric properties are characterized by measurements of the electrical conductivity, the Seebeck coefficient and the thermal conductivity in the temperature range of 300–800 K. Doping Se into the Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x} matrix suppresses the carrier concentration, and the electrical conductivity actually decreases with the Se content. However, moderate Se doping is effective in enhancing the thermoelectric performance of the n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x}, because of the resulted dramatically decreased thermal conductivity. Analyses indicate that the heightened point-defect scattering induced by Se doping together with the electron–phonon scattering induced by Te doping is responsible for the reduction of lattice thermal conductivity of these compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Preparation and thermophysical properties of (Sm{sub 1−x}Er{sub x}){sub 2}Ce{sub 2}O{sub 7} oxides for thermal barrier coatings

Graphical abstract: - Highlights: • These ceramic materials with fluorite structure were synthesized. • Defect points lead to their lower thermal conductivities. • The lower ionic radius of Er{sup 3+} ion leads to the reduction of thermal expansion coefficient of (Sm{sub 1−x}Er{sub x}){sub 2}Ce{sub 2}O{sub 7} oxides. - Abstract: (Sm{sub 1−x}Er{sub x}){sub 2}Ce{sub 2}O{sub 7} ceramics were synthesized by sol–gel method and sintered at 1600 °C for 10 h in air. The influence of Er{sub 2}O{sub 3}-substitution on the phase structure and thermophysical properties of Sm{sub 2}Ce{sub 2}O{sub 7} was investigated. The phase structures of these ceramics were identified by X-ray diffraction showing that all synthesized ceramics have fluorite-type structure. The measurements for thermophysical properties of these ceramics show that their thermal conductivities and thermal expansion coefficients remarkably decreased through Er-substitution. However, the thermal expansion coefficients were higher than that of YSZ and their thermal conductivities were much lower than that of 8YSZ. The excellent thermophysical property implies that these solid solutions are potential materials for the ceramics layer in thermal barrier coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermodynamic origin of nonvolatility in resistive memory

Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design device properties. For example, experiments have achieved 10 orders of magnitude longer retention times than predicted by current models. Here, using electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors, we reveal that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. Furthermore, this result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Analysis of orientation-dependent deformation mechanisms in additively manufactured Zr using in-situ micromechanical testing: Twinning and orientation gradient

Here, orientation-dependent plasticity in zirconium (Zr)-alloy, which is produced through ultrasonic additive manufacturing (UAM) with subsequent hot-isostatic pressing (HIP), was analyzed by recording electron backscattered diffraction (EBSD) data during in-situ micromechanical testing. Three (0001) plane orientations of a hexagonal close-packed (HCP) structure were analyzed parallel to (1) the rolling direction [X||tensile direction (TD)], (2) the build direction [Z], and (3) the transverse direction [Y]. The analysis revealed that the grains with ~<0001>||TD show twin-dominant plasticity with three variants from {10 $\overline{1}$ 2}<$\overline{1}$ 011>; minor slipping with ($10\overline{1}$ 1)[$\overline{2}$ 113], and ($11\overline{2}$ 2)[$\overline{1} \overline{1}$ 23] pyramidal slip has also been observed. However, grains with orientation ~<0001>⊥TD are mainly sensitive to dislocations assisted plasticity-leading to orientation gradients formation. Furthermore, the neck formation was identified as originating from higher populated micro-crack locations and their association with localized plasticity at defect points in the UAM material. These results demonstrate that minimization of impurities to enable grain growth across prior foil interfaces makes HIP an effective methodology for producing Zr plate, with deformation characteristics expected for conventionally manufactured Zr.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spatial variation of the low-temperature micro-photoluminescence of THM-grown CdZnTeSe

The quaternary compound CdZnTeSe (CZTS) has emerged as a next-generation detector material. Unlike CdZnTe (CZT), CZTS has the distinct advantages of little or no sub-grain boundary networks and a much lower concentration of Te inclusions, plus better compositional homogeneity. Thus, the material is expected to offer better spatial charge-transport homogeneity compared to CZT. However, an inhomogeneous distribution of point defects in both CZT and CZTS, such as Cd vacancies and residual impurities, can impose additional spatial inhomogeneity of the resistivity, carrier mobilities, and carrier lifetimes of the material. To investigate the spatial distribution of such defects in CZTS, low-temperature photoluminescence (PL) spectroscopic studies were performed at different positions along a single crystalline CZTS sample surface, which was grown by the traveling heater method (THM). In conclusion, the intensity variation of the PL emission of excitons bound to a neutral acceptor defect (A 0 , X), which is likely dominated by an acceptor like Cu-related level, with respect to the PL emission line from a neutral donor-bound exciton (D 0 , X) exhibited significant spatial variation, while the peak energy positions were approximately uniform due to the high compositional and bandgap homogeneity of the material.

II-VI semiconductor↗
DOE OSTI2017

Modeling thermal spike driven reactions at low temperature and application to zirconium carbide radiation damage

The development of TEM-visible damage in materials under irradiation at cryogenic temperatures cannot be explained using classical rate theory modeling with thermally activated reactions since at low temperatures thermal reaction rates are too low. Although point defect mobility approaches zero at low temperature, the thermal spikes induced by displacement cascades enable some atom mobility as it cools. In this work a model is developed to calculate “athermal” reaction rates from the atomic mobility within the irradiation-induced thermal spikes, including both displacement cascades and electronic stopping. The athermal reaction rates are added to a simple rate theory cluster dynamics model to allow for the simulation of microstructure evolution during irradiation at cryogenic temperatures. The rate theory model is applied to in-situ irradiation of ZrC and compares well at cryogenic temperatures. The results show that the addition of the thermal spike model makes it possible to rationalize microstructure evolution in the low temperature regime.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H2+ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

Amorphization, ion irradiation, SiC↗
DOE OSTI2025

Thermal conductivity measurement of U-Mo and U-Mo/Al interaction layers generated from in-pile irradiation using the suspended-bridge method

Here, this study presents the first measurement of the individual thermal conductivity of U-7wt.%Mo fuel particles and U-Mo/Al interaction layers (ILs) from in-pile irradiated dispersion fuel plates, using the suspended-bridge method. Nanorods of U-7wt.%Mo fuel and U-Mo/Al ILs were extracted by focused ion beam (FIB), and their microstructures were characterized with transmission electron microscopy (TEM). TEM revealed finely distributed nanobubbles in the U-7wt.%Mo matrix, along with an amorphous structure in the ILs. The thermal conductivity of in-pile irradiated U-7wt.%Mo was approximately 30% lower than that of the unirradiated material, ranging from 6.7 W/m·K at 300 K to 8.5 W/m·K at 380 K. The ILs exhibited even lower thermal conductivity, from 2.1 W/m·K at 300 K to 2.7 W/m·K at 380 K. These reductions, attributed to nanobubbles, fission products, and irradiation-induced point defects, were analyzed through a combination of microstructural characterization and literature-based transport models, which successfully reproduced the observed degradation trends.

42 - ENGINEERING↗
DOE OSTI2026

Irradiation-induced grain boundary migration in an ion irradiated Fe-Ni-Cr-Mn alloy

Irradiation-induced grain boundary migration (RIGM) has previously been observed in different metallic systems. However, the mechanisms and dependence on irradiation conditions remained unclear. Here, we report on radiation-induced GB migration (RIGM) in a coarse-grain Fe-Ni-Cr-Mn austenitic alloy irradiated with Fe ions at 400 °C to 15, 35, and 70 dpa. Grain boundary migration is only observed in the irradiated regions and exhibits a linear dependence on the locally delivered dose, as estimated from SRIM calculations. Notably, the same linear dependence is noted across the nominal doses. Furthermore, the evidence points to grain boundary migration being mediated by the flux of point defects to grain boundaries and motivates additional systematic studies of RIGM in these systems.

Grain boundary↗
DOE OSTI2017

Microstructure of calcite deformed by high-pressure torsion: An X-ray line profile study

Calcite aggregates were deformed to high strain using high-pressure torsion and applying confining pressures of 1–6 GPa and temperatures between room temperature and 450 °C. The run products were characterized by X-ray diffraction, and key microstructural parameters were extracted employing X-ray line profile analysis. The dominant slip system was determined as r {$ 10\bar{1}4 $}&lang;$ \bar{2}021 $&rang; with edge dislocation character. The resulting dislocation density and the size of the coherently scattering domains (CSD) exhibit a systematic dependence on the P-T conditions of deformation. While high pressure generally impedes recovery through reducing point defect mobility, the picture is complicated by pressure-induced phase transformations in the CaCO 3 system. Transition from the calcite stability field to those of the high-pressure polymorphs CaCO 3 - II, CaCO 3 - III and CaCO3-IIIb leads to a change of the microstructural evolution with deformation. At 450 °C and pressures within the calcite stability field, dislocation densities and CSD sizes saturate at shear strains exceeding 10 in agreement with earlier studies at lower pressures. In the stability field of CaCO 3 - II, the dislocation density reflects a more complex behavior. Furthermore, at a given strain and strain rate, the dislocation density increases and the CSD size decreases with increasing pressure within the stability fields of either calcite or of the high-pressure polymorphs. There is, in contrast, a jump from high dislocation densities and small CSDs in the upper pressure region of the calcite stability field to lower dislocation densities and larger CSDs in the low-pressure region of the CaCO 3 - II stability field. This jump is more pronounced at higher temperatures and less so at room temperature. The pressure influence on the deformation-induced evolution of dislocation densities implies that pressure variations may change the rheology of carbonate rocks. In particular, a weakening is expected to occur at the transition from the calcite to the CaCO 3 - II stability field, if aragonite does not form.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Large-angle illumination STEM: Toward three-dimensional atom-by-atom imaging

To completely understand and control materials and their properties, it is of critical importance to determine their atomic structures in all three dimensions. Recent revolutionary advances in electron optics – the inventions of geometric and chromatic aberration correctors as well as electron source monochromators – have provided fertile ground for performing optical depth sectioning at atomic-scale dimensions. In this study we theoretically demonstrate the imaging of top/sub-surface atomic structures and identify the depth of single dopants, single vacancies and the other point defects within materials by large-angle illumination scanning transmission electron microscopy (LAI-STEM). The proposed method also allows us to measure specimen properties such as thickness or three-dimensional surface morphology using observations from a single crystallographic orientation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Study of Effects of Cl and Se in CdSeTe Solar Cells Using Scanning Transmission Electron Microscopy

Solar cells based on poly-crystalline CdTe thin films are a leading candidate for low-cost conversion of solar energy due to their near optimum band gap, high absorption coefficient and ease of manufacturing. Due to non-radiative Shockley-Read-Hall (SRH) recombination at grain boundaries (GBs), dislocations, and point defects, current CdTe-based solar cell efficiency appears to be limited to ~22%, which is still below the theoretical limit (~30%). It is well known that CdCl 2 annealing is essential for high performing CdTe solar cells due to grain recrystallization and passivation of defect states within the band gap by Cl atoms. Incorporating Se into CdTe to form an alloyed CdSeTe solar cells also shows a high overall efficiency. Simultaneous addition of Cl and Se can further improve the efficiencies of CdTe solar cells, but yet a comprehensive experimental and theoretical study of effects of Cl and Se in CdSeTe solar cell is absent.

14 SOLAR ENERGY↗
DOE OSTI2020

Resolving atomic transport through iron oxide under irradiation using isotopic tracers

Structural materials in nuclear environments are exposed to complex and harsh conditions, including high temperatures, corrosive solutions, and irradiation. Material stability and likewise degradation are fundamentally controlled by atomic transport mechanisms. Here, we investigate the influence of radiation-induced, non-equilibrium point defect populations on mass transport within model oxide systems using isotopic tracers and atom probe tomography. An isotopically labelled hematite (a-Fe2O3) film was synthesized with 16O- and 18O-rich layers (>30nm and 10 nm, respectively) sequentially deposited via molecular beam epitaxy. One region of the film was proton irradiated to ~0.1 dpa at 450°C, and regions outside the beam spot provided a non-irradiated control of thermal annealing only. 3D APT was used to directly visualize the elemental and O-isotopic redistribution following both thermal and combined thermal and irradiation conditions. Complementary scanning transmission electron microscopy (STEM) was also employed to study the microstructural evolution. Error function fits of the 18O-concentration profiles enabled quantification of diffusion coefficients.

isotopic tracers, diffusion, proton irradiation, h↗
DOE OSTI2017

Temperature Dependence Discontinuity in the Stability of Manganese doped Ceria Nanocrystals

CeO 2 has strong potential for chemical-looping water splitting. It has been shown that manganese doping decreases interface energies of CeO 2 , allowing increased stability of high surface areas in this oxygen carrier oxide. The phenomenon is related to the segregation of Mn3+ at interfaces, which causes a measurable decrease in excess energy. Here in the present work, it is shown that, despite the stability of nanocrystals of manganese-doped CeO 2 with relation to undoped CeO 2 , the effect is strongly dependent on the oxidation state of manganese, i.e., on the temperature. At temperatures below 800 °C, Mn is in the 3+ valence state, and coarsening is hindered by the reduced interface energetics, showing smaller crystal sizes with increasing Mn content. At temperatures above 800 °C, Mn is reduced to its 2+ valence state, and coarsening is enhanced with increasing Mn content. Atomistic simulations show the segregation of Mn to grain boundaries is relatively insensitive to the charge state of the dopant. However, point defect modeling finds that the reduced state causes a decrease in cation vacancy concentration and an increase in cation interstitials, reducing drag forces for grain boundary mobility and increasing growth rates.

36 MATERIALS SCIENCE↗