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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation

We present a reliable method to obtain patterned back gates compatible with high mobility molecular beam epitaxy via local oxygen ion implantation that suppresses the conductivity of an 80 nm thick silicon doped GaAs epilayer. Our technique was optimized to circumvent several constraints of other gating and implantation methods. The ion-implanted surface remains atomically flat which allows unperturbed epitaxial overgrowth. We demonstrate the practical application of this gating technique by using magneto-transport spectroscopy on a two-dimensional electron system (2DES) with a mobility exceeding 20 × 10{sup 6} cm{sup 2}/V s. The back gate was spatially separated from the Ohmic contacts of the 2DES, thus minimizing the probability for electrical shorts or leakage and permitting simple contacting schemes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Cobalt ferrite nanoparticles with improved aqueous colloidal stability and electrophoretic mobility

We have synthesized CoFe{sub 2}O{sub 4} (CFO) nanoparticles of size ∼ 12.2 nm by hydrothermal synthesis method. To control the size of these CFO nanoparticles, oleic acid was used as a surfactant. The inverse spinel phase of the synthesized nanoparticles was confirmed by X-ray diffraction method. As synthesized oleic acid coated CFO (OA@CFO) nanoparticles has very less electrophoretic mobility in the water and are not water dispersible. These OA@CFO nanoparticles were successfully turned into water soluble phase with a better colloidal aqueous stability, through a chemical treatment using citric acid. The modified citric acid coated CFO (CA@CFO) nanoparticles were dispersible in water and form a stable aqueous solution with high electrophoretic mobility.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm{sup 2}/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V{sub TH}) of 1.5 V, and I{sub ON/OFF} ratio of ∼10{sup 7}. A significant improvement in the field-effect mobility (up to ∼33.5 cm{sup 2}/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V{sub TH}, or I{sub ON/OFF} ratio due to the presence of a highly ordered microstructure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer

Molybdenum disulfide is a promising channel material for field effect transistors (FETs). In this paper, monolayer MoS{sub 2} grown by chemical vapor deposition (CVD) was used to fabricate top-gate FETs through standard optical lithography. During the fabrication process, charged impurities and interface states are introduced, and the photoresist is not removed cleanly, which both limit the carrier mobility and the source-drain current. We apply a SiO{sub 2} protective layer, which is deposited on the surface of MoS{sub 2}, in order to avoid the MoS{sub 2} directly contacting with the photoresist and the ambient environment. Therefore, the contact property between the MoS{sub 2} and the electrodes is improved, and the Coulomb scattering caused by the charged impurities and the interface states is reduced. Comparing MoS{sub 2} FETs with and without a SiO{sub 2} protective layer, the SiO{sub 2} protective layer is found to enhance the characteristics of the MoS{sub 2} FETs, including transfer and output characteristics. A high mobility of ∼42.3 cm{sup 2}/V s is achieved, which is very large among the top-gate CVD-grown monolayer MoS{sub 2} FETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial GaN NWN is formed on c-sapphire under nitrogen rich conditions, and then changing the source from Ga to In at appropriate substrate temperature yields the nucleation of a self assembled spontaneous m-plane side faceted-InN NR. By HRTEM, the NRs are shown to be dislocation-free and have a low band gap value of 0.65 eV. Hall measurements are carried out on a single InN NR along with J-V measurements that yield mobility values as high as ≈4453 cm{sup 2}/V s and the carrier concentration of ≈1.1 × 10{sup 17} cm{sup −3}, which are unprecedented in the literature for comparable InN NR diameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Enhancing electron mobility in La-doped BaSnO{sub 3} thin films by thermal strain to annihilate extended defects

We report the enhancement of room-temperature electron mobility in La-doped BaSnO{sub 3} (LBSO) thin films with thermal strain induced by high temperature nitrogen (N{sub 2}) annealing. Simple annealing under an N{sub 2} environment consistently doubled the electron mobility of the LBSO films on the SrTiO{sub 3} (STO) substrates to as high as 78 cm{sup 2} V{sup −1} s{sup −1} at a carrier concentration of 4.0 × 10{sup 20 }cm{sup −3}. This enhancement is mainly attributed to annihilation of extended defects as a consequence of compressive strain induced by the difference in the thermal expansion coefficients of LBSO and STO. Our study suggests that thermal strain can be exploited to reduce extended defects and to facilitate electron transport in transparent oxide semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

High field-effect mobility at the (Sr,Ba)SnO{sub 3}/BaSnO{sub 3} interface

A perovskite oxide, BaSnO{sub 3}, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO{sub 3}-based heterostructures with atomically smooth surfaces, fabricated on SrTiO{sub 3} substrates by the (Sr,Ba)SnO{sub 3} buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO{sub 3} as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO{sub 3}-based field-effect transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Determinants of residential mobility: an adaptive retrospective survey method

This study introduces a survey instrument to collect retrospective life-course events, focusing on residential relocation, and it utilizes the survey to evaluate determinants of residential mobility. Here, the survey consists of seven modules collecting information about household structure and household demographics, latest residential relocation, current and previous home, employment, education, vehicle ownership, and travel behavior. The time window of the life-course calendar in the survey is customized according to the latest residential relocation as an anchor point to assist with memory recollection and balance the required input from participants. The survey is used to collect data from a sample of 514 respondents in Sydney, Australia, and another sample of 404 respondents in Chicago, Illinois, in the US. The Cox proportional hazard model is used to analyze residential mobility. The results show primary school commencement is a salient determinant of residential relocation, but its impact is significantly higher in Chicago compared to Sydney.

96 KNOWLEDGE MANAGEMENT AND PRESERVATION↗
DOE OSTI2022

Giant Starship Elements Mobilize Accessory Genes in Fungal Genomes

Accessory genes are variably present among members of a species and are a reservoir of adaptive functions. In bacteria, differences in gene distributions among individuals largely result from mobile elements that acquire and disperse accessory genes as cargo. In contrast, the impact of cargo-carrying elements on eukaryotic evolution remains largely unknown. Here, we show that variation in genome content within multiple fungal species is facilitated by Starships, a newly discovered group of massive mobile elements that are 110 kb long on average, share conserved components, and carry diverse arrays of accessory genes. We identified hundreds of Starship-like regions across every major class of filamentous Ascomycetes, including 28 distinct Starships that range from 27 to 393 kb and last shared a common ancestor ca. 400 Ma. Using new long-read assemblies of the plant pathogen Macrophomina phaseolina, we characterize four additional Starships whose activities contribute to standing variation in genome structure and content. One of these elements, Voyager, inserts into 5S rDNA and contains a candidate virulence factor whose increasing copy number has contrasting associations with pathogenic and saprophytic growth, suggesting Voyager’s activity underlies an ecological trade-off. We propose that Starships are eukaryotic analogs of bacterial integrative and conjugative elements based on parallels between their conserved components and may therefore represent the first dedicated agents of active gene transfer in eukaryotes. Our results suggest that Starships have shaped the content and structure of fungal genomes for millions of years and reveal a new concerted route for evolution throughout an entire eukaryotic phylum.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2018

How a Fano Resonance Crosses the Mobility Edge in Quantum Waveguides

new scenario for the occurrence of a Fano resonance in the transmission probability of electron waveguides is investigated using a coupled-channel theory. Both a quantum dot and an antidot with either short- or finite-range interaction are embedded in the electron waveguide. Particularly, when the Fano resonance occurs close to the mobility edge (channel threshold), it is shown that Γ~U{sub 12}{sup 4/3}, where Γ is the resonance width and U{sub 12} is the coupling strength between bound state and continuum. This is in contrast to the usual result Γ ~U{sub 12}{sup 2}, which is valid when the resonance occurs far from the mobility edge. Furthermore, it is shown that increasing the size of both dot and antidot leads to larger resonance width.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Theory of transport phenomena in polycrystalline lead chalcogenide films. Mobility. Nondegenerate statistics

The mobility of nondegenerate electrons in quasi-single-crystal and polycrystalline PbTe films is experimentally investigated. The results obtained are compared with the data for bulk crystals at the same charge-carrier concentration. Under the assumption of limitation of the charge-carrier mobility by intercrystallite potential barriers, electron transport in an electric field is theoretically considered. The theoretical results are in good agreement with the experiment.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers

The effect of the hybridization of quantum states on electron transport in a two-barrier quantum well δ-doped through a spacer layer at the limit of heavy doping is shown theoretically and experimentally. A method for increasing the electron mobility in the quantum well by suppressing the tunnel coupling with the donor region through the introduction of an AlAs nanobarrier into the spacer layer is proposed. It is experimentally shown that, in the samples with a shallow quantum well, the AlAs nanobarrier introduced into the spacer layer provides a larger than threefold increase in the electron mobility at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect are studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Electron mobility in the inversion layers of fully depleted SOI films

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Coupling Front-End Separations, Ion Mobility Spectrometry, and Mass Spectrometry For Enhanced Multidimensional Biological and Environmental Analyses

Ion mobility spectrometry (IMS) is a widely used analytical technique for rapid molecular separations in the gas phase. IMS alone is useful, but its coupling with mass spectrometry (MS) and front-end separations has been extremely beneficial for increasing measurement sensitivity, peak capacity of complex mixtures, and the scope of molecular information in biological and environmental sample analyses. Multiple studies in disease screening and environmental evaluations have even shown these IMS-based multidimensional separations extract information not possible with each technique individually. This review highlights 3-dimensional separations using IMS-MS in conjunction with a range of front-end techniques, such as gas chromatography (GC), supercritical fluid chromatography (SFC), liquid chromatography (LC), solid phase extractions (SPE), capillary electrophoresis (CE), field asymmetric ion mobility spectrometry (FAIMS), and microfluidic devices. The origination, current state, various applications, and future capabilities for these multidimensional approaches are described to provide insight into the utility and potential of each technique.

Environmental Molecular Sciences Laboratory↗