Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Materials for Devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides

Abstract Transition metal dichalcogenides (TMDs), especially in two-dimensional (2D) form, exhibit many properties desirable for device applications. However, device performance can be hindered by the presence of defects. Here, we combine state of the art experimental and computational approaches to determine formation energies and charge transition levels of defects in bulk and 2D MX 2 (M = Mo or W; X = S, Se, or Te). We perform deep level transient spectroscopy (DLTS) measurements of bulk TMDs. Simultaneously, we calculate formation energies and defect levels of all native point defects, which enable identification of levels observed in DLTS and extend our calculations to vacancies in 2D TMDs, for which DLTS is challenging. We find that reduction of dimensionality of TMDs to 2D has a significant impact on defect properties. This finding may explain differences in optical properties of 2D TMDs synthesized with different methods and lays foundation for future developments of more efficient TMD-based devices.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗
NASA NTRS1990

Applying CLIPS to control of molecular beam epitaxy processing

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Rabeau, Arthur A.↗
DOE OSTI2022

Giant Doping Response of Magnetic Anisotropy in MnTe

Developing simple ways to control spin states in spintronic devices is a crucial step towards increasing their functionality. MnTe is a room-temperature antiferromagnet with promising spintronic properties, including for thermospintronics and magnon-based devices. Here, we show that, in MnTe, less than 1% Li is sufficient to produce a dramatic spin reorientation as observed by neutron diffraction. The behavior of the 0001 magnetic Bragg peak reveals a significant reorientation of the Mn spins from planar in the pure material to almost completely axial with minimal Li doping. Temperature dependence of the magnetic peaks in Li-doped samples indicates that axial spins shift back to planar suddenly upon approaching the Néel temperature (T N = 307 K). Density functional theory calculations support the idea that a shift in the Fermi level caused by doping is responsible for switching the material between two competing magnetic ground states. These results pave the way for developing easy switching of magnetic states in functional materials such as spintronic devices and topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-efficiency and durable optoelectronic devices using layered 2D perovskites

A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.

14 SOLAR ENERGY↗
NASA NTRS2006

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

infrared imaging↗
DOE OSTI2021

Low barrier height in a ZnO nanorods/NbSe 2 heterostructure prepared by van der Waals epitaxy

Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density functional theory (DFT) calculations predicted that charge transfer between ZnO and NbSe 2 lowers the barrier height at the heterojunction and that conductive surface states of ZnO provide an additional conduction channel in the ZnO/NbSe 2 heterostructures. Crystalline ZnO/NbSe 2 heterostructures were prepared by the hydrothermal method. Electrical characterizations of the ZnO/NbSe 2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.

2D materials↗
DOE OSTI2020

Spin filtering and spin separation in 2D materials by topological spin Hall effect

The needs of high speed performance electronic devices for various applications require novel materials and new physical phenomena. For these purposes we propose to study new physical effects based on electron scattering on magnetic skyrmions and vortices distributed in a 2D ferromagnetic material. Herein, we show that the topological spin Hall effect can be efficiently employed for the filtering, switching, and separation of spin currents. For some values of the parameters (conduction electron concentrations, and skyrmion/vortex sizes) it is possible to separate Hall currents for different electron spin projections as it is like for different carrier charges (electrons and holes) in the normal Hall effect. The calculations are performed using the Boltzmann kinetic equation for the nonequilibrium distribution function and the Lippmann–Schwinger equation for the transition matrix in the whole range of the adiabaticity parameter. The spin filtering due to the skyrmion/vortex scattering can be several orders of magnitude more efficient in the narrow range of the electron concentrations than that of the ordinary ferromagnetic spin polarization in spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Wind Supply Chain Security: Hardware Enumeration and Analysis

This project, undertaken by Idaho National Laboratory (INL) for the Department of Energy (DOE) Wind Energy Technologies Office (WETO), focused on the enumeration and analysis of six key devices important to wind technologies. The devices analyzed included Beckhoff Bus Terminal Controllers (BK1120 and BC9000), a Beckhoff Economy Built-in Panel PC (CP6231), an N-Tron Managed Industrial Ethernet Switch (711FX3), a Bachmann M1 Gateway, and a Bachmann Smart Power Plant Controller. Device selection was driven by availability and budget constraints, with several components sourced from existing wind farms and others procured through a co-agreement with another WETO-funded project. The project's primary objective was to create a hardware bill of materials (HBOM) for each device, identifying and documenting all components to assess potential security and supply chain risks. A detailed analysis revealed over 750 unique components across the six devices, with 80% successfully identified and accompanied by datasheets. Notably, Texas Instruments emerged as the leading supplier, providing over 16% of the components, followed by ON Semiconductor at 11.3%, Analog Devices at 5.3%, and Renesas Electronics Corp at 4.1%. Other notable vendors included Toshiba Corporation, iC-Haus Corporation, Atmel, Vishay, and STMicroelectronics. The enumeration process involved thorough documentation of each component, including its designation, quantity, identifiers, pin package, description, vendor, model, and country of origin. This process provided valuable insights into the complexity and diversity of the electronic systems within these wind devices. It also highlighted the distinct separation of components between vendors, suggesting a trend of vendor-specific component usage. Key findings from the project emphasized the importance of broadening the scope of vendor analysis in future research to gain a comprehensive understanding of component distribution and commonality. The identification of vendor-specific component usage patterns offers new avenues for research and underscores the significance of continued investigation in this field. Overall, this project provides critical insights into the component composition of wind devices, aiding in the development of improved supply chain management and component sourcing strategies. The results contribute valuable knowledge to the wind technology sector, laying the groundwork for enhanced security and resilience in wind energy systems.

17 - WIND ENERGY↗
DOE OSTI2024

Viability of Additively Manufactured Electrodes for Lithium-Ion Batteries

As the global economy becomes increasingly electrified, the demand for batteries and energy storage is expected to rise significantly, particularly in the transportation and electricity sectors. Lithium-ion batteries (LIBs) are currently the most advanced and widely used technology in this field. Traditionally, LIBs are manufactured using simple 2D planar geometries to maximize production efficiency and minimize costs. However, this approach limits energy density due to the restricted design flexibility of the electrodes. Additive manufacturing (AM) offers a promising solution to enhance the energy density and efficiency of LIBs by enabling the design of architectures that reduce diffusive losses and allow for a greater amount of active material to be incorporated within the same device footprint, thereby minimizing the use of inactive materials. Different AM techniques come with their own set of limitations, including printing speed, material compatibility, and scale, which must be considered when designing electrodes. Scalable and cost-effective methods are particularly important for electric vehicle batteries, while achieving higher energy densities in microbatteries is crucial for the miniaturization of wearable electronics and medical devices. Here, in this study, we simulate various 3D porous electrode designs for LIBs using graphite and nickel manganese cobalt oxide (NMC) electrodes. These designs are selected to represent structures that could be produced using different AM techniques, such as direct ink writing, fused deposition modeling, and stereolithography. Our results indicate that at higher charging rates and increased areal mass loading, 3D structures can outperform traditional 2D electrodes, although the benefits may diminish with more complex designs that are harder to manufacture. The observed gains in energy density are attributed to improved electrode utilization and reduced diffusive energy losses. This comprehensive analysis of structure–performance relationships will provide valuable insights to guide future research on 3D designs, material selection, and AM techniques for additively manufactured battery electrodes.

25 ENERGY STORAGE↗
DOE OSTI2024

Computational Insights into Phase Equilibria Between Wide-Gap Semiconductors and Contact Materials

Novel wide-band-gap semiconductors are needed for next-generation power electronics, but there is a gap between a promising material and a functional device. Finding stable (metal) contacts is one of the major challenges that is currently dealt with mainly via trial and error. Herein, we computationally investigate the thermochemistry and phase coexistence at the junction between three wide-gap semiconductors, ..beta..-Ga2O3, GeO2, and GaN, and possible contact materials. The pool of possible contacts includes 47 elemental metals and a set of 4 common, n-type transparent conducting oxides (ZnO, TiO2, SnO2, and In2O3). We use first-principles thermodynamics to model the Gibbs free energies of chemical reactions as a function of gas pressure (pO2/pN2) and equilibrium temperature. We deduce whether a semiconductor/contact interface will be stable at relevant conditions or a chemical reaction between them is to be expected, possibly influencing the long-term reliability and performance of devices. We generally find that most elemental metals tend to oxidize or nitridize and form various interface oxide/nitride layers. Exceptions include select late- and post-transition metals and, in the case of GaN, also the alkali metals, which are predicted to exhibit stable coexistence, although in many cases at relatively low gas partial pressures. Similar is true for the transparent conducting oxides, for which, in most cases, we predict a preference toward forming ternary oxides when in contact with ..beta..-Ga2O3 and GeO2. The only exception is SnO2, which we find to form stable contacts with both oxides. Finally, we show how the same approach can be used to predict gas partial pressure vs temperature phase diagrams to help direct synthesis of ternary compounds. We believe these results provide a valuable guidance in selecting contact materials to wide-gap semiconductors and suitable growth conditions.

contact materials↗
DOE OSTI2024

Fusion Neutron Generator

The proposed code, named FROG (Fusion neutron Generator) is built upon the open-source particle transport Monte Carlo toolkit Geant4. Geant4 provides C++ classes that can be leveraged to build application-specific codes dealing with the transport of particles through matter. Geant4-based codes are applied in high-energy particle physics experiments, medical applications, shielding, and space applications for example. The FROG code allows the user to define the geometry of a neutron converter device shaped as a hollow cylinder, where a neutron breeding material such as lithium deuteride (LiD) is cladded by two concentric cylinders. Such neutron converter is then placed inside a regular nuclear fission reactor, where thermal neutrons will react with the neutron breeder material (typically, Lithium 6), and through a series of reactions, will generate high-energy neutrons – neutrons whose kinetic energy are around 14 MeV. The hollowed central portion can hold a specimen that will be bombarded by high-energy neutrons created inside the neutron breeding material. Figuratively speaking, this type of device transforms neutrons from thermal (~0.625 eV) to fusion (~14 MeV) energies and is sometimes termed “fusion-to-thermal neutron converters” in the literature. The code consists of C++ source file compiled and linked to generate an executable. The user can select the dimensions of the converter (radius, length, and thickness of the breeder material), the breeder material type, the cladding material, and the specimen material that will be activated or irradiated. As input, the neutron flux for a specific location inside a reactor, for instance, positions in ATR, is required. As output, the code predicts the number of high-energy neutrons produced, the total neutron flux and fluence as well as its detailed spectrum. The physics involved in such device is very complex, as it requires modeling neutron transport, light-ion (tritons) transport, as well as fusion reactions. The Geant4 toolkit provides the required physical models.

Martin, NicholasP. [Idaho National Laboratory (INL↗
NASA NTRS1972

Carbon dioxide concentration indicator

Device will provide visual indication of concentration of carbon dioxide. It consists of small amounts of absorbent material contained in semipermeable membrane and device to detect color changes. Material will absorb quantity of carbon dioxide proportional to carbon dioxide concentration in atmosphere. Amount of absorption is indicated by color change.

King, P. H.↗