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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dynamics of submicron aerosol droplets in a robust optical trap formed by multiple Bessel beams

In this paper, we model the three-dimensional escape dynamics of single submicron-sized aerosol droplets in optical multiple Bessel beam traps. Trapping in counter-propagating Bessel beams (CPBBs) is compared with a newly proposed quadruple Bessel beam (QBB) trap, which consists of two perpendicularly arranged CPBB traps. Calculations are performed for perfectly and imperfectly aligned traps. Mie-theory and finite-difference time-domain methods are used to calculate the optical forces. The droplet escape kinetics are obtained from the solution of the Langevin equation using a Verlet algorithm. Provided the traps are perfectly aligned, the calculations indicate very long lifetimes for droplets trapped either in the CPBB or in the QBB trap. However, minor misalignments that are hard to control experimentally already severely diminish the stability of the CPBB trap. By contrast, such minor misalignments hardly affect the extended droplet lifetimes in a QBB trap. The QBB trap is found to be a stable, robust optical trap, which should enable the experimental investigation of submicron droplets with radii down to 100 nm. Optical binding between two droplets and its potential role in preventing coagulation when loading a CPBB trap is briefly addressed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Oxygen transport in the internal xenon plasma of a dispenser hollow cathode

Reactive gases such as oxygen and water vapor modify the surface morphology of BaO dispenser cathodes and degrade the electron emission properties. For vacuum cathodes operating at fixed temperature, the emission current drops rapidly when oxygen adsorbs on top of the low work function surface. Previous experiments have shown that plasma cathodes are more resistant to oxygen poisoning and can operate with O{sub 2} partial pressures one to two orders of magnitude higher than vacuum cathodes before the onset of poisoning occurs. Plasma cathodes used for electric thrusters are typically operated with xenon; however, gas phase barium, oxygen, and tungsten species may be found in small concentrations. The densities of these minor species are small compared with the plasma density, and thus, their presence in the discharge does not significantly alter the xenon plasma parameters. It is important, however, to consider the transport of these minor species as they may deposit on the emitter surface and affect the electron emission properties. In this work, we present the results of a material transport model used to predict oxygen fluxes to the cathode surface by solving the species conservation equations in a cathode with a 2.25 mm diameter orifice operated at a discharge current of 15 A, a Xe flow rate of 3.7 sccm, and 100 ppm of O{sub 2}. The dominant ionization process for O{sub 2} is resonant charge exchange with xenon ions. Ba is effectively recycled in the plasma; however, BaO and O{sub 2} are not. The model shows that the oxygen flux to the surface is not diffusion-limited; therefore, the high resistance to oxygen poisoning observed in plasma cathodes likely results from surface processes not considered here.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Large magnetic entropy change and adiabatic temperature rise of a Gd{sub 55}Al{sub 20}Co{sub 20}Ni{sub 5} bulk metallic glass

Gd{sub 55}Al{sub 20}Co{sub 20}Ni{sub 5} bulk metallic glass (BMG) was synthesized by minor Ni substitution for Co in the Gd{sub 55}Al{sub 20}Co{sub 25} BMG in which excellent glass forming ability (GFA) and magneto-caloric effect were reported previously. The Gd{sub 55}Al{sub 20}Ni{sub 20}Co{sub 5} amorphous rod has a similar GFA to the Gd{sub 55}Al{sub 20}Co{sub 25} BMG but exhibits better magnetic properties. The peak value of magnetic entropy change (−ΔS{sub m}{sup peak}) of the Gd{sub 55}Al{sub 20}Co{sub 20}Ni{sub 5} BMG is 9.8 Jkg{sup −1} K{sup −1}. The field dependence of −ΔS{sub m}{sup peak} follows a −ΔS{sub m}{sup peak}∝H{sup 0.85} relationship. The adiabatic temperature rise of the rod is 4.74 K under 5 T and is larger than of other BMGs previously reported. The improved magnetic properties were supposed to be induced by the enhanced interaction between 4f electron in the rare-earth and 3d electron in the transition metal elements by means of a minor Ni substitution for Co.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Shockley-Read-Hall lifetimes in CdTe

A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is ~10⁻¹³ cm², which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

Vertically integrated graphene-semiconductor systems remain of significant technological importance for their promise to captivate new device physics and propel the development of advanced carbon-based opto-electronic devices. In this study, we carry out a series of bias-dependent transport, gate-dependent transport, and photoconduction measurements to probe the opto-electronic characteristics of metal-graphene-4H-SiC (0001) (Si-face) heterojunctions. The forward bias transport is found to deviate strongly from thermionic emission one as being controlled by the device circuitry and minority carrier injection mechanisms. An improved analytical model is offered and used to extract key junction parameters including series resistance of ∼80 kΩ, interface barrier height of ∼0.6 eV, and ideality factor of ∼6.1. The results of the photocurrent tests point to a light-assisted minority carrier injection as a key mechanism behind the photoconductive gain obtained in the devices subject to a weak, sub-bandgap cw-excitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry

Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine the H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Potential variation around grain boundaries in BaSi{sub 2} films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Potential variations across the grain boundaries (GBs) in a 100 nm thick undoped n-BaSi{sub 2} film on a cast-grown multicrystalline Si (mc-Si) substrate are evaluated using Kelvin probe force microscopy (KFM). The θ-2θ X-ray diffraction pattern reveals diffraction peaks, such as (201), (301), (410), and (411) of BaSi{sub 2}. Local-area electron backscatter diffraction reveals that the a-axis of BaSi{sub 2} is tilted slightly from the surface normal, depending on the local crystal plane of the mc-Si. KFM measurements show that the potentials are not significantly disordered in the grown BaSi{sub 2}, even around the GBs of mc-Si. The potentials are higher at GBs of BaSi{sub 2} around Si GBs that are formed by grains with a Si(111) face and those with faces that deviate slightly from Si(111). Thus, downward band bending occurs at these BaSi{sub 2} GBs. Minority carriers (holes) undergo a repelling force near the GBs, which may suppress recombination as in the case of undoped n-BaSi{sub 2} epitaxial films on a single crystal Si(111) substrate. The barrier height for hole transport across the GBs varies in the range from 10 to 55 meV. The potentials are also higher at the BaSi{sub 2} GBs grown around Si GBs composed of grains with Si(001) and Si(111) faces. The barrier height for hole transport ranges from 5 to 55 meV. These results indicate that BaSi{sub 2} GBs formed on (111)-dominant Si surfaces do not have a negative influence on the minority-carrier properties, and thus BaSi{sub 2} formed on underlayers, such as (111)-oriented Si or Ge and on (111)-oriented mc-Si, can be utilized as a solar cell active layer.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Plasma response measurements of non-axisymmetric magnetic perturbations on DIII-D via soft x-ray imaging

Recent observations on DIII-D have advanced the understanding of plasma response to applied resonant magnetic perturbations (RMPs) in both H-mode and L-mode plasmas. Three distinct 3D features localized in minor radius are imaged via filtered soft x-ray emission: (i) the formation of lobes extending from the unperturbed separatrix in the X-point region at the plasma boundary, (ii) helical kink-like perturbations in the steep-gradient region inside the separatrix, and (iii) amplified islands in the core of a low-rotation L-mode plasma. In this study, these measurements are used to test and to validate plasma response models, which are crucial for providing predictive capability of edge-localized mode control. In particular, vacuum and two-fluid resistive magnetohydrodynamic(MHD) responses are tested in the regions of these measurements. At the plasma boundary in H-mode discharges with n = 3 RMPs applied, measurements compare well to vacuum-field calculations that predict lobe structures. Yet in the steep-gradient region, measurements agree better with calculations from the linear resistive two-fluid MHD code, M3D-C1. Relative to the vacuum fields, the resistive two-fluid MHD calculations show a reduction in the pitch-resonant components of the normal magnetic field (screening), and amplification of non-resonant components associated with ideal kink modes. However, the calculations still over-predict the amplitude of the measuredperturbation by a factor of 4. In a slowly rotating L-mode plasma with n = 1 RMPs, core islands are observed amplified from vacuum predictions. Finally, these results indicate that while the vacuum approach describes measurements in the edge region well, it is important to include effects of extended MHD in the pedestal and deeper in the plasma core.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Au-Cu{sub 2}O core-shell nanowire photovoltaics

Semiconductor nanowires are among the most promising candidates for next generation photovoltaics. This is due to their outstanding optical and electrical properties which provide large optical cross sections while simultaneously decoupling the photon absorption and charge carrier extraction length scales. These effects relax the requirements for both the minority carrier diffusion length and the amount of semiconductor needed. Metal-semiconductor core-shell nanowires have previously been predicted to show even better optical absorption than solid semiconductor nanowires and offer the additional advantage of a local metal core contact. Here, we fabricate and analyze such a geometry using a single Au-Cu{sub 2}O core-shell nanowire photovoltaic cell as a model system. Spatially resolved photocurrent maps reveal that although the minority carrier diffusion length in the Cu{sub 2}O shell is less than 1 μm, the radial contact geometry with the incorporated metal electrode still allows for photogenerated carrier collection along an entire nanowire. Current-voltage measurements yield an open-circuit voltage of 600 mV under laser illumination and a dark diode turn-on voltage of 1 V. This study suggests the metal-semiconductor core-shell nanowire concept could be extended to low-cost, large-scale photovoltaic devices, utilizing for example, metal nanowire electrode grids coated with epitaxially grown semiconductor shells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Central role of electronic temperature for photoelectron charge and spin mobilities in p{sup +}-GaAs

The charge and spin mobilities of minority photoelectrons in p{sup +}-GaAs are determined by monitoring the effect of an electric field on the spatial profiles of the luminescence and of its polarization. By using electric fields to increase the photoelectron temperature T{sub e} without significantly changing the hole or lattice temperatures, the charge and spin mobilities are shown to be principally dependent on T{sub e}. For T{sub e} > 70 K, both the charge and spin mobilities vary as T{sub e}{sup −1.3}, while at lower temperatures this changes to an even more rapid T{sub e}{sup −4.3} law. This finding suggests that current theoretical models based on degeneracy of majority carriers cannot fully explain the observed temperature dependence of minority carrier mobility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of calcination temperature on electrical properties of Nd{sub 0.7}Ba{sub 0.3}MnO{sub 3}

In this work, Nd{sub 0.7}Ba{sub 0.3}MnO{sub 3} was synthesized via cryo-milling method to investigate the effect of calcination temperature on the structure, microstructure, magnetic and electrical properties. XRD analysis revealed all samples can be indexed to orthorhombic structure systems with Imma space group accompany with some minor phases of Mn{sub 2}O{sub 4} and BaMnO{sub 3}. FESEM analysis confirmed that a slight increase in the grain size from 117.4 nm (600°C), 119.5 nm (700°C), 121.0 nm (800°C), 123.1 nm (900°C) to 138.4 nm (1000°C) was observed when different calcination temperature was applied. Four Point Probe measurements showed that all samples are in paramagnetic insulating region and T{sub MIT} is lower than 20K. Resistivity increase when grain size reduces due to increase of effective grain boundary that weakens the electron hopping process via double exchange mechanism. Beside, a drastic increase of resistivity also observed due to present of minor secondary phase (BaMnO{sub 3}) in sample C9.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells

Chromium (Cr) can degrade silicon wafer-based solar cell efficiencies at concentrations as low as 10 10 cm –3 . In this contribution, we employ synchrotron-based X-ray fluorescence microscopy to study chromium distributions in multicrystalline silicon in as-grown material and after phosphorous diffusion. We complement quantified precipitate size and spatial distribution with interstitial Cr concentration and minority carrier lifetime measurements to provide insight into chromium gettering kinetics and offer suggestions for minimizing the device impacts of chromium. We observe that Cr-rich precipitates in as-grown material are generally smaller than iron-rich precipitates and that Cr i point defects account for only one-half of the total Cr in the as-grown material. This observation is consistent with previous hypotheses that Cr transport and CrSi 2 growth are more strongly diffusion-limited during ingot cooling. Here, we apply two phosphorous diffusion gettering profiles that both increase minority carrier lifetime by two orders of magnitude and reduce [Cr i ] by three orders of magnitude to ≈10 10 cm –3 . Some Cr-rich precipitates persist after both processes, and locally high [Cr i ] after the high-temperature process indicates that further optimization of the chromium gettering profile is possible.

14 SOLAR ENERGY↗
DOE OSTI2015

Excitation correlation photoluminescence in the presence of Shockley-Read-Hall recombination

Excitation correlation photoluminescence (ECPL) measurements are often analyzed in the approximation of a cross correlation of charge carrier populations generated by the two delayed pulses. In semiconductors, this approach is valid for a linear non-radiative recombination path, but not for a non-linear recombination rate as in the general Shockley-Read-Hall recombination scenario. Here, the evolution of the ECPL signal was studied for deep trap recombination following Shockley-Read-Hall statistics. Analytic solutions can be obtained for a fast minority trapping regime and steady state recombination. For the steady state case, our results show that the quadratic radiative term plays only a minor role, and that the shape of the measured signal is mostly determined by the non-linearity of the recombination itself. We find that measurements with unbalanced intense pump and probe pulses can directly provide information about the dominant non-radiative recombination mechanism. The signal traces follow the charge carrier concentrations, despite the complex origins of the signal, thus showing that ECPL can be applied to study charge carrier dynamics in semiconductors without requiring elaborate calculations. The model is compared with measurements on a reference sample with alternating layers of InGaAs/InAlAs that were additionally cross-checked with time resolved optical pump terahertz probe measurements and found to be in excellent agreement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Multispecies density peaking in gyrokinetic turbulence simulations of low collisionality Alcator C-Mod plasmas

Peaked density profiles in low-collisionality AUG and JET H-mode plasmas are probably caused by a turbulently driven particle pinch, and Alcator C-Mod experiments confirmed that collisionality is a critical parameter. Density peaking in reactors could produce a number of important effects, some beneficial, such as enhanced fusion power and transport of fuel ions from the edge to the core, while others are undesirable, such as lower beta limits, reduced radiation from the plasma edge, and consequently higher divertor heat loads. Fundamental understanding of the pinch will enable planning to optimize these impacts. We show that density peaking is predicted by nonlinear gyrokinetic turbulence simulations based on measured profile data from low collisionality H-mode plasma in Alcator C-Mod. Multiple ion species are included to determine whether hydrogenic density peaking has an isotope dependence or is influenced by typical levels of low-Z impurities, and whether impurity density peaking depends on the species. We find that the deuterium density profile is slightly more peaked than that of hydrogen, and that experimentally relevant levels of boron have no appreciable effect on hydrogenic density peaking. The ratio of density at r/a = 0.44 to that at r/a = 0.74 is 1.2 for the majority D and minority H ions (and for electrons), and increases with impurity Z: 1.1 for helium, 1.15 for boron, 1.3 for neon, 1.4 for argon, and 1.5 for molybdenum. The ion temperature profile is varied to match better the predicted heat flux with the experimental transport analysis, but the resulting factor of two change in heat transport has only a weak effect on the predicted density peaking.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Cyclic electric field response of morphotropic Bi{sub 1/2}Na{sub 1/2}TiO{sub 3}-BaTiO{sub 3} piezoceramics

In this study, the evolution of field induced mechanisms in lead-free piezoelectric ceramics (1−x)Bi{sub 1/2}Na{sub 1/2}TiO{sub 3}-xBaTiO{sub 3} with x = 0.06 and 0.07 was investigated by transmission electron microscopy, neutron, and X-ray diffraction. Preliminary investigations revealed a strong degradation of macroscopic electromechanical properties within the first 100 bipolar electric cycles. Therefore, this structural investigation focuses on a comparative diffraction study of freshly prepared, poled, and fatigued specimens. Transmission electron microscopy and neutron diffraction of the initial specimens reveal the coexistence of a rhombohedral and a tetragonal phase with space group R3c and P4bm, respectively. In situ electric field X-ray diffraction reveals a pronounced field induced phase transition from a pseudocubic state to a phase composition of significantly distorted phases upon poling with an external electric field of 4 kV/mm. Although the structures of the two compositions are pseudocubic and almost indistinguishable in the unpoled virgin state, the electric field response shows significant differences depending on composition. For both compositions, the application of an electric field results in a field induced phase transition in the direction of the minority phase. Electric cycling has an opposite effect on the phase composition and results in a decreased phase fraction of the minority phase in the fatigued remanent state at 0 kV/mm.

36 MATERIALS SCIENCE↗