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At least 1,081 records · Page 60

Unconventional Z n parton states at ν=7/3: Role of finite width

A recent work [Balram, Jain, and Barkeshli, Phys. Rev. Res. 2, 013349 (2020)] has suggested that an unconventional state describing Zn superconductivity of composite bosons, which supports excitations with charge 1/(3n) of the electron charge, is energetically better than the Laughlin wave function at \nu=7/3 in GaAs systems. All experiments to date, however, are consistent with the latter. To address this discrepancy, we study the effect of finite width on the ground state and predict a phase transition from an unconventional Zn state at small widths to the Laughlin state for widths exceeding ~1.5 magnetic lengths. Here, we also determine the parameter region where an unconventional state is stabilized in the one-third filled zeroth Landau level in bilayer graphene. The roles of Landau level mixing and spin are also considered.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anisotropic Two-Dimensional Disordered Wigner Solid

The interplay between the Fermi sea anisotropy, electron-electron interaction, and localization phenomena can give rise to exotic many-body phases. An exciting example is an anisotropic two-dimensional (2D) Wigner solid (WS), where electrons form an ordered array with an anisotropic lattice structure. Such a state has eluded experiments up to now as its realization is extremely demanding: First, a WS entails very low densities where the Coulomb interaction dominates over the kinetic (Fermi) energy. Attaining such low densities while keeping the disorder low is very challenging. Second, the low-density requirement has to be fulfilled in a material that hosts an anisotropic Fermi sea. Here, we report transport measurements in a clean (low-disorder) 2D electron system with anisotropic effective mass and Fermi sea. The data reveal that at extremely low electron densities, when the r s parameter, the ratio of the Coulomb to the Fermi energy, exceeds ≃ 38, the current-voltage characteristics become strongly nonlinear at small dc biases. Several key features of the nonlinear characteristics, including their anisotropic voltage thresholds, are consistent with the formation of a disordered, anisotropic WS pinned by the ubiquitous disorder potential.

42 ENGINEERING↗

An improved ten-moment closure for reconnection and instabilities

The integration of kinetic effects in fluid models is important for global simulations of Earth's magnetosphere. The use of the two-fluid ten-moment model, which includes the pressure tensor for both species, has had some success in simulating Ganymede and Mercury with a simple closure model. Here, we discuss a heat flux closure which accounts for some limitations of the earlier work while remaining computationally tractable. Comparisons with kinetic simulations for magnetic reconnection and lower-hybrid drift instabilities show good agreement with kinetic results and improvements on previous closure models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Magnetotransport and electronic structure of the antiferromagnetic semimetal YbAs

A number of rare-earth monopnictides have topologically nontrivial band structures together with magnetism and strong electronic correlations. In order to examine whether the antiferromagnetic (AFM) semimetal YbAs (TN=0.5 K) exhibits such a scenario, we have grown high-quality single crystals using a flux method, and characterized the magnetic properties and electronic structure using specific heat, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) measurements, together with density functional theory (DFT) calculations. Both ARPES and DFT calculations find no evidence for band inversions in YbAs, indicating a topologically trivial electronic structure. From low-temperature magnetotransport measurements, we map the field-temperature phase diagram, where we find the presence of a field stabilized phase distinct from the AFM phase at low temperatures. Additionally, an extremely large magnetoresistance (XMR) for both YbAs and the nonmagnetic counterpart LuAs is also observed, which can consistently be accounted for by the presence of electron-hole compensation. Moreover, an angle-dependent study of the Shubnikov-de Haas effect oscillations reveals very similar Fermi surfaces between YbAs and LuAs, with light effective masses down to at least 0.5 K, indicating that the Yb-4f electrons are well localized, and do not contribute to the Fermi surface. However, the influence of the localized Yb-4f electrons on the magnetotransport of YbAs can be discerned from the distinct temperature dependence of the XMR compared to that of LuAs, which we attribute to the influence of short-ranged spin correlations that appear well above TN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

22 K superconductivity in Ba Fe 2 As 2 exposed to F 2

Several previous reports on undoped AEFe 2 As 2 (AE = alkaline earth metal) point to drops in resistivity indicative of possible superconductivity and some degree of Meissner effect in the magnetic susceptibility. Also, based on both resistivity and magnetic susceptibility measurements, controlled exposure to water vapor has been shown to induce superconductivity in AEFe 2 As 2 . In our study, BaFe 2 As 2 single crystals grown using the self-flux method showed a full resistive drop around 22 K and magnetic shielding, when exposed to fluorine gas postgrowth. Our measurements indicate electron (donor) doping via atomic substitution of F for As is concurrent with the observed superconductivity, which sheds light on the likely effect of exposure to water vapor in previous work. Like doping experiments (such as substitution of Co for Fe, P for As, or K for Ba) in AEFe 2 As 2 to date, the present work is consistent with suppression of the spin density wave transition coincident with the appearance of T c . In addition to answering the puzzle of superconductivity in undoped or water vapor exposed AEF 2 As 2 , our results also represent a fast (20 min exposure to 5% F in He) and reliable method suitable for inducing superconductivity in thin films of AEFe 2 As 2 . As a result, some supportive work on BaFe 2 As 2 exposed to Cl 2 is also presented.

36 MATERIALS SCIENCE↗

Spin-dependent Seebeck and Nernst effects in an ideal skyrmion gas

In this work, we theoretically and numerically study spin-dependent Seebeck and Nernst effects in 2D ferromagnetic materials with the topological spin texture (skyrmion and vortex) ideal gas. From the numerical solution of the matrix Boltzmann equation for a nonequilibrium distribution function and the Lippmann–Schwinger equation for a T-matrix we find the strong nonlinear behaviors in the thermoelectric coefficients depending on skyrmion/vortex diameters and electron concentrations. In particular, the dramatic dependences in the Seebeck and Nernst coefficients take place at larger magnetic texture sizes where the abrupt sign flip in the vortex Seebeck and Nernst coefficients occurs in the narrow region of electron concentrations. In this case the normalized Nernst coefficient changes from +5 to -7. The spin-dependent thermoelectric coefficients are proportional to T at low temperatures for all skyrmion/vortex sizes.

36 MATERIALS SCIENCE↗

Intrinsic Berry curvature driven anomalous Nernst thermopower in the semimetallic Heusler alloy CoFeVSb

Understanding of spin-heat coupling mechanisms and magnetothermoelectric phenomena, including the anomalous Nernst effect (ANE), in emergent quaternary Heusler alloys is of practical importance for applications in thermal management and energy harvesting. Here, we demonstrate an intrinsic Berry curvature mediated anomalous Nernst thermopower in CoFeVSb, which orders magnetically at high temperature ( T C ≈ 850 K ) with a large saturation magnetization of ≈ 2.2 μ B / f . u . at room temperature. We show that the electron-electron elastic and electron-magnon inelastic scattering dominate longitudinal electrical transport at low temperatures ( T ≤ 50 K ), whereas the electron-phonon and electron-magnon scatterings govern it at higher T . The longitudinal thermopower is resulted mainly from the diffusive contribution with a very large longitudinal Seebeck coefficient ( 42 μ V K - 1 at 395 K). The value of the anomalous Nernst coefficient ( S ANE ) for CoFeVSb at room temperature is 0.039 μ V K - 1 which is higher than the compressively strained SrRu O 3 film ( 0.03 μ V K - 1 ) as well as the spin gapless semiconductor CoFeCrGa ( 0.018 μ V K - 1 ). On lowering T , both the ordinary Nernst coefficient and carrier mobility increase but an opposite trend is found for S ANE . Our ab initio simulations reveal the topological semimetallic nature of CoFeVSb with a pair of Weyl points. These Weyl crossings result in a significant contribution to the Berry curvature, leading to an intrinsic anomalous Hall conductivity ( σ x y AHE ) of ≈ 85 S/cm, which matches well with experiment (77 S/cm at 2 K). Our experimental findings and ab initio calculations support the dominance of the intrinsic Berry curvature in the observed ANE. The ratio of σ x y AHE to the transverse anomalous thermoelectric conductivity ( α x y ANE ) shows an increasing trend with T attaining a sizable fraction of k B e ( ≈ 0.35 k B e ) at room temperature.

36 MATERIALS SCIENCE↗

Physics of E × B discharges relevant to plasma propulsion and similar technologies

This paper provides perspectives on recent progress in understanding the physics of devices in which the external magnetic field is applied perpendicular to the discharge current. This configuration generates a strong electric field that acts to accelerate ions. The many applications of this set up include generation of thrust for spacecraft propulsion and separation of species in plasma mass separation devices. These “E × B” plasmas are subject to plasma–wall interaction effects and to various micro- and macroinstabilities. In many devices we also observe the emergence of anomalous transport. This perspective presents the current understanding of the physics of these phenomena and state-of-the-art computational results, identifies critical questions, and suggests directions for future research.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Arsenic activation and compensation in single crystal CdTe bilayers

In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dopant activation was systematically investigated using molecular beam epitaxy (MBE) grown single crystal bilayers of As-doped CdTe on undoped CdTe. Results suggest multiple paths for improved As-activation in polycrystalline CdTe-based devices. It was found that the carrier concentration in this MBE material saturated at ∼3 × 1016 cm−3, with high levels (>50%) of As-activation possible. High activation could be achieved with a post-growth activation temperature of ∼450 °C, when the initial doping level was below the saturation level. However, at typical polycrystalline As incorporation levels (>5 × 1016 cm−3), the excess As is inactive or compensating, requiring elevated temperatures (500–600 °C) to achieve high activation. Oxygen in the annealing ambient was detrimental, while the effect of CdCl2 in the ambient is more case-dependent. A 575 °C activation anneal was combined with a 450 °C CdCl2 treatment to better understand the implications for polycrystalline CdTe. Interestingly, on highly doped samples, processes ending with a high temperature step displayed high activation, while those ending at 450 °C significantly reduced the carrier concentration (with or without CdCl2 in the ambient). Low activation can be restored with another high temperature anneal, allowing reproducible toggling between high and low activation based on the final temperature. Photoluminescence revealed the presence of donor–acceptor pairs in the low activation state that appear to be associated with a compensating defect.

14 SOLAR ENERGY↗

Bloch ferromagnetism of composite fermions

In 1929, Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. However, experimental realizations of this effect have been hard to implement. In this work, we report the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism. Our platform utilizes the two-dimensional Fermi sea of composite fermions near half-filling of the lowest Landau level. We measure the Fermi wavevector—which directly provides the spin polarization—and observe a sudden transition from a partially spin-polarized to a fully spin-polarized ground state as we lower the density of the composite fermions. Our theoretical calculations that take Landau level mixing into account provide a semi-quantitative account of this phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe 2

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe 2 . However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. Here, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe 2 . Furthermore, at the tBL edges, we observe the characteristic spectroscopic signatures of the QSH edge states. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first-principles calculations, we quantify the interactions in tBL WTe 2 and its topological edge states as a function of interlayer distance and conclude that it is possible to engineer the topology of WTe 2 bilayers via the twist angle as well as interlayer interactions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Evidence for Rashba magnetism in ultrathin ferromagnet–heavy metal bilayers

Here, we show that ultrathin transition ferromagnet–heavy metal bilayers exhibit anomalous temperature- and electric bias-dependent behaviors near the Curie temperature, inconsistent with the usual Weiss magnetism. Characterization by several complementary techniques and analysis of the dependence on composition reveal that these effects originate from the interplay between interfacial spin-orbit interaction and magnetism, resulting in the emergence of a state with distinct magnetic and magnetoelectronic properties that can be described in the framework of the Rashba model as Rashba magnetism. Our findings open a route for the characterization and control of interfacial spin-orbit phenomena for efficient spin-orbitronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Analyticity and the Unruh effect: a study of local modular flow

The Unruh effect can be formulated as the statement that the Minkowski vacuum in a Rindler wedge has a boost as its modular flow. In recent years, other examples of states with geometrically local modular flow have played important roles in understanding energy and entropy in quantum field theory and quantum gravity. Here I initiate a general study of the settings in which geometric modular flow can arise, showing (i) that any geometric modular flow must be a conformal symmetry of the background spacetime, and (ii) that in a well behaved class of “weakly analytic” states, geometric modular flow must be future-directed. I further argue that if a geometric transformation is conformal but not isometric, then it can only be realized as modular flow in a conformal field theory. Finally, I discuss a few settings in which converse results can be shown — i.e., settings in which a state can be constructed whose modular flow reproduces a given vector field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of oxidation and impurities in lithium surfaces on the emitting wall plasma sheath

The use of lithium as a surface coating in fusion devices improves the plasma performance, but the change in the wall properties affects the secondary electron emission properties of the material. Lithium oxidizes easily, which drives the emission yield well above unity. We present here simulations demonstrating the change in the sheath structure from monotonic to the nonmonotonic space-charge limited sheath using an energy-dependent data-driven emission model, which self-consistently captures both secondary emission and backscattering populations. Increased secondary electron emission from the material has ramifications for the degradation and erosion of the wall. The results show that the oxidation leads to an increased electron energy flux into the wall and a reduced ion energy flux. The net transfer of energy to the surface is significantly greater for the oxidized case than for the pure lithium case. High backscattering rates of low-energy particles lead to a high re-emission rate at the wall.

Fusion reactors↗

Giant Exfoliation Induced Magnetic Coercivity in Fe 3 GaTe 2

Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare-earth-free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe 3 GaTe 2 . Bulk crystals exhibit Curie temperatures above 350 K but negligible room-temperature coercivity. When thinned below ∼100 nm, the coercive field is dramatically enhanced, reaching nearly 1 T at room temperature for in-plane fields—comparable to conventional hard magnets. Micromagnetic analysis reveals a crossover in magnetization reversal from domain-mediated processes in bulk samples to quasi-coherent rotation in thin flakes, driven by increased effective anisotropy and suppressed domain formation. This thickness-dependent transition enables tuning of magnetic hardness without chemical modification. Combined with high saturation magnetization and robust room-temperature performance, Fe 3 GaTe 2 emerges as a promising rare-earth-free material for spintronic applications. Its layered structure further allows integration into van der Waals heterostructures, where large in-plane coercivity can stabilize magnetic states against perturbations and interlayer coupling, offering potential for high-density nonvolatile memory and domain-wall-based devices.

36 MATERIALS SCIENCE↗

Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi 2 Te 4

Intrinsic magnetic topological insulators offer low disorder and large magnetic band gaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the quantum anomalous Hall (QAH) effect and axion insulator phases have been realized. Furthermore, these observations occur at temperatures significantly lower than the Néel temperature of bulk MnBi 2 Te 4 , and measurement of the magnetic energy gap at the Dirac point in ultrathin MnBi 2 Te 4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verification of a temperature-dependent topological phase transition from a large band gap QAH insulator to a gapless TI paramagnetic phase. Here we utilize temperature-dependent angle-resolved photoemission spectroscopy to study epitaxial ultrathin MnBi 2 Te 4 . We directly observe a layer-dependent crossover from a 2D ferromagnetic insulator with a band gap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>70 meV) at 8 K in 3 and 5 SL MnBi 2 Te 4 . The QAH gap is confirmed to be magnetic in origin, as it becomes gapless with increasing temperature above 8 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, in this study, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb) 2 Te 3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

36 MATERIALS SCIENCE↗

Symmetry Control of Unconventional Spin–Orbit Torques in IrO 2

Abstract Spin–orbit torques generated by a spin current are key to magnetic switching in spintronic applications. The polarization of the spin current dictates the direction of switching required for energy‐efficient devices. Conventionally, the polarizations of these spin currents are restricted to be along a certain direction due to the symmetry of the material allowing only for efficient in‐plane magnetic switching. Unconventional spin–orbit torques arising from novel spin current polarizations, however, have the potential to switch other magnetization orientations such as perpendicular magnetic anisotropy, which is desired for higher density spintronic‐based memory devices. Here, it is demonstrated that low crystalline symmetry is not required for unconventional spin–orbit torques and can be generated in a nonmagnetic high symmetry material, iridium dioxide (IrO 2 ), using epitaxial design. It is shown that by reducing the relative crystalline symmetry with respect to the growth direction large unconventional spin currents can be generated and hence spin–orbit torques. Furthermore, the spin polarizations detected in (001), (110), and (111) oriented IrO 2 thin films are compared to show which crystal symmetries restrict unconventional spin transport. Understanding and tuning unconventional spin transport generation in high symmetry materials can provide a new route towards energy‐efficient magnetic switching in spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗