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At least 1,081 records · Page 60

Robust topological state against magnetic impurities observed in the superconductor PbTaSe 2

Magnetic impurities deposited on topological superconductor candidate PbTaSe 2 can introduce a nonsplitting zero-energy state inside the superconducting gap, which has been proposed as a field-free platform for topological zero modes. However, it is still unclear how robust the topological state in PbTaSe 2 is against magnetic impurities, which is related to the topological nature of the zero-energy state as well as its potential for quantum computation. In this paper, we use scanning tunneling microscopy to study the topological surface state in the normal state of PbTaSe 2 under the perturbation of magnetic impurities. We visualize the quasiparticle interference (QPI) arising from the topological surface state. We then deposit Fe impurities on the surface to form atomic Fe adatoms. We find that each Fe adatom sits at a unique interstitial position on the surface and features a local state at high energies, both of which are consistent with our first-principles calculation that further reveals its large magnetic moment. Our systematic Fe deposition and subsequent measurements show that the arclike QPI pattern at the Fermi energy is robust with up to 3% Fe coverage where the atomic nature of Fe adatoms still holds. Our results provide evidence that the topological surface state at the Fermi energy in PbTaSe 2 is robust against dilute magnetic impurities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exceptionally large anomalous Hall effect due to anticrossing of spin-split bands in the antiferromagnetic half-Heusler compound TbPtBi

We have investigated the magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state of TbPtBi with the anomalous Hall angle reaching ~0.68–0.76, which is a few times larger than the previously reported record in GdPtBi. First-principles electronic structure and the associated anomalous Hall conductivity were computed in order to interpret the experimental results. Furthermore, our analysis shows that the AHE in TbPtBi does not originate from the Weyl points but that it is driven by the large net Berry curvature produced by the anticrossing of spin-split bands near the Fermi level in TbPtBi.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Born effective charges and electric polarization in bulk ε-Fe 2 O 3 : An ab-initio approach

Limitation in the synthesis of single-crystal has restricted the complete understanding of the magnetoelectric properties of bulk ε-Fe 2 O 3 . In order to understand the electric polarization of bulk ε-Fe 2 O 3 , we have employed a first-principles Berry-phase method and the density functional perturbation theory to calculate the spontaneous electric polarization and Born effective charges (BECs) of ε-Fe 2 O 3 . The polarization quanta of the ferroelectric bulk ε-Fe 2 O 3 and its polarization lattice are also reported. The polarization switching through a paraelectric transition phase of a low barrier is found to be favorable. The polarization and BECs calculated by both methods are in good agreement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Logarithmic criticality in transverse thermoelectric conductivity of the ferromagnetic topological semimetal CoMnSb

Here we report the results of our experimental studies on the magnetic, transport, and thermoelectric properties of the ferromagnetic metal CoMnSb. A sizable anomalous Hall conductivity $σ_{yx}$ and transverse thermoelectric conductivity $α_{yx}$ are found experimentally and comparable in size to the values estimated from first-principles calculation. Our experiment further reveals that CoMnSb exhibits -T log T critical behavior in $α_{yx}$ (T), deviating from Fermi liquid behavior $α_{yx}$ ~ T over a decade of temperature between 10 and 400 K, similar to ferromagnetic Weyl and nodal-line semimetals. Our theoretical calculation for CoMnSb also predicts the - T log T behavior when the Fermi energy locates near the Weyl nodes in momentum space.

36 MATERIALS SCIENCE↗

VZr_BCC_SolidSolution_128atoms_VASP6

We performed density functional theory (DFT) calculations for body-centered-cubic (BCC) structures with 128 lattices sites of solid solution binary alloys vanadium-zirconium (V-Zr). The electronic structures of alloys have been calculated using Vienna Ab initio Simulation Package (VASP). Within this package the DFT approach is used to reduce many-body Schrodinger equation to set of single particle Kohn-Sham (KS) equations. The generalized electronic exchange-correlation functional is described by generalized gradient approximation with the Perdew-Burke-Ernzerhof parametrization. The electron-ion interactions is described by pseudopotentials developed within the plane-wave basis projector augmented-wave (PAW) approach \cite{PAW}. These pseudopotentials are available at the VASP portal (http://cms.mpi.univie.ac.at/vasp/). Our calculations have been run with the pseudopotentials treating s and p semi-core states as valence in case for the elements V and Zr. The electronic densities and potentials are expanded over plane-waves with energy cutoff of 350 eV. 2x2x2 k-mesh and normal precision were used. The alloys were modeled by supercell containing 128 randomly distributed atoms. At initial step the atoms occupy perfect bcc lattice cites. This initial structure was optimized until energy changes less than 1e-6 eV, while forces acting on atoms don't exceed 1e-2 eV/angstrom. The electron-ion interaction is described by PAW pseudopotentials. The calculations have been collected by sampling chemical compositions across the entire compositional range. The chemical compositions have been sampled by progressively changing the number of atoms per constituent by 4. For each chemical composition of binaries and ternaries, the first-principle calculations have been run for 100 randomized arrangements of the constituents on the BCC lattice sites. We collected data for a total of 3,100 randomized atomic structures over 31 chemical compositions.

36 MATERIALS SCIENCE↗

Effect of atomic size mismatch and chemical complexity on the local lattice distortion of BCC solid solution alloys

Here, the effects of atomic size mismatch and chemical complexity on the local lattice distortion of solid-solution alloys VNbTa, TiVNbMo, TiVNbMoTa and TiVNbMoTaWRe with body-centered cubic (BCC) structure are quantitatively studied with time-of-flight neutron total scattering, extended X-ray absorption fine structure (EXAFS) measurements and first principles calculations. Neutron atomic pair distribution function (PDF) measurements found that the local lattice distortion in the ternary solid-solution alloy VNbTa is 1.1 %, obviously larger than that of the most complicated solid-solution alloy (0.27% for TiVNbMoTaWRe). Our results suggested that atomic size mismatch in high entropy alloys is more critical to the local lattice distortion than chemical complexity. Both EXAFS analysis and theoretical calculations indicate that there is a maximum of ~4 % difference between the bonding length of different atomic pairs in VNbTa.

36 MATERIALS SCIENCE↗

An alternative ground state of MnBi 2 Te 4 obtained by magnetic annealing

Magnetic topological insulators are extremely interesting because they combine the unique properties of topological insulators with magnetism. While as-grown MnBi 2 Te 4 single crystals exhibit an A-type antiferromagnetic (AFM) ordering at T N ≈ 24 K, annealed MnBi 2 Te 4 under 10 T leads to the change of the magnetic properties from AFM to superparamagnetic behavior with the trend of the magnetization saturation at 2 K. Correspondingly, the magnetotransport properties change as well, revealing large positive magnetoresistance with the linear field dependence at low temperatures. Through the first-principles calculations, we provide insight into the experimental results. Our investigation demonstrates that magnetic annealing is a powerful approach for manipulating material properties due to the nearly degenerate ground states in MnBi 2 Te 4 .

Electronic transport↗

Shock compression of vanadium at extremes: Theory and experiment

Here, the equation of state (EOS) and shock compression of bulk vanadium were investigated using canonical ab initio molecular dynamic simulations, with experimental validation to 865 GPa from shock data collected at Sandia's Z Pulsed Power Facility. In simulations the phase space was sampled along isotherms ranging from 3000 K to 50 000 K, for densities between ρ = 3 and 15 g / cm 3 , with a focus on the liquid regime and the body-centered-cubic phase in the vicinity of the melting limit. The principal Hugoniot predicted from first principles is overall consistent with shock data, while it showed that current multiphase SESAME-type EOS for vanadium needed revision in the liquid regime. A more accurate SESAME EOS was developed using constraints from experiments and simulations. This work emphasizes the need to use a combined theoretical and experimental approach to develop high-fidelity EOS models for extreme conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires

Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ~10% higher κ for bulk 28 Si than for bulk natural Si ( nat Si). Here we show that in stark contrast to this bulk behavior, 28 Si (99.92% enriched) nanowires have up to 150% higher κ than nat Si nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in nat Si nanowires, correlated via transmission of phonons to the native amorphous SiO 2 shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.

36 MATERIALS SCIENCE↗

Fossil Power Plant Cyber Security Life-Cycle Risk Reduction, A Practical Framework for Implementation

Market conditions are forcing fossil electricity generation facility owners and operators to implement advanced digital technologies. These technologies enable efficiencies, operational flexibility, operations and maintenance efficiencies, and adapting to a transitioning workforce. These digital technologies, however, can increase the cybersecurity attack surface. The purpose of this research was to develop a holistic cybersecurity risk reduction framework for fossil generation facilities. The framework begins with assessing how cyber risk changes across facility life cycles, including plant, system, vendor, and business life cycles. The next phase performs consequence analysis to prioritize high consequence events. Focusing on high consequence events allows owners to use a graded, risk-informed approach to prioritize cybersecurity efforts. The final phase identifies the digital asset attack surface in sensors and instrumentation and control equipment. After the vulnerabilities are identified, the owner selects mitigating cybersecurity control measures (or countermeasures) based on the risk analysis from the previous phases. This report describes the current industry cybersecurity best practices in fossil generation that are based on the first principles for cybersecurity engineering. The report is divided into five sections that describe the implementation of the risk reduction framework and present identified research, methodological, and technology gaps that were identified through this course of research and development.

01 COAL, LIGNITE, AND PEAT↗

Suppressed Fluctuations as the Origin of the Static Magnetic Order in Strained Sr 2 RuO 4

Combining first-principles density-functional calculations and Moriya's self-consistent renormalization theory, we explain the recently reported counterintuitive appearance of an ordered magnetic state in uniaxially strained Sr 2 RuO 4 beyond the Lifshitz transition. We show that strain weakens the quantum spin fluctuations, which destroy the static order, more strongly than the tendency to magnetism. Furthermore, a different rate of decrease of the spin fluctuations vs magnetic stabilization energy promotes the onset of a static magnetic order beyond a critical strain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Controlling selective nucleation and growth of dysprosium islands on graphene by metal intercalation

We report metal intercalation is an effective method to modify the physical and chemical properties of low-dimensional systems such as epitaxial graphene. Here, we show that the nucleation and growth of metal nanostructures on epitaxial graphene on SiC(0001) can be dramatically changed by metal intercalation. Using scanning tunneling microscopy experiments, we demonstrate that dysprosium (Dy) metal islands are selectively nucleated on the area with Dy intercalation under both graphene and carbon buffer layers, while the adjacent area with only buffer layer intercalated remains relatively bare. Using first-principles calculations based on density functional theory, we show that adsorption of Dy adatom on the preferred nucleation area is energetically more favorable than on other areas. Moreover, changes in the electronic structure and the interlayer spacing upon Dy intercalation obtained from our calculations are also consistent with experimental observations. Our results indicate that metal intercalation is a promising way to manipulate the interaction between graphene and deposited adatoms.

2-dimensional systems↗

Strengthening model development and effects of low diffusing solutes to coarsening resistance in aluminum alloys

A modified Orowan strengthening model is proposed to account for finite rod-shaped precipitates with hemispherical caps in aluminum alloy systems. A combined computational and experimental approach is used to study the influences of anisotropic Orowan looping and solute-dislocation interaction on temperature-dependent yield strength. Here, the strengthening model is validated with a dataset containing 297 experimental precipitate geometries, chemistries, temperatures, and strength measurements, and achieves a strong predictive correlation of 0.8713 with experimentally measured yield strengths. Under conditions that are applicable to coarsening, constant particle volume fraction and aspect ratio, the model predicts that short rod precipitates provide far superior strengthening effects compared to plate precipitates. A cast Al-Si-Mg-Cu alloy with rod-shaped Q-phase (Al 3 Cu 2 Mg 9 Si 7 ) precipitates was developed with a novel chemistry exploring the use of low-diffusivity elements (Mn, Ni, V, Zr) to limit precipitate coarsening. The thermodynamic behavior of Mn, Ni, V, and Zr across the Q-phase interface is examined using transmission electron microscopy (TEM), first-principles density-functional theory (DFT) calculations. and atom-probe tomography (APT). DFT calculations utilizing TEM identified Q-phase/Al-matrix interfaces show that Mn, Ni, V, and Zr preferentially segregate to the Q-phase precipitate boundaries which suggests inhibition of precipitate coarsening and higher strengths after temperature exposure. Atom-probe tomography confirms solute atom partitioning/segregation at the Q-phase/Al-matrix interface, found in the modified commercial AS7GU alloy (A356 +0.5%Cu), which supports these observations.

36 MATERIALS SCIENCE↗

Simulating charged defects at database scale

Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is, therefore, crucial for understanding the growth and operation of materials, especially for optoelectronics applications. In this work, we present a general-purpose Python framework for the analysis of point defects in crystalline materials as well as a generalized workflow for their treatment with high-throughput simulations. The distinguishing feature of our approach is an emphasis on a unique, unit cell, structure-only, definition of point defects which decouples the defect definition, and the specific supercell representation used to simulate the defect. This allows the results of first-principles calculations to be aggregated into a database without extensive provenance information and is a crucial step in building a persistent database of point defects that can grow over time, a key component toward realizing the idea of a “defect genome” that can yield more complex relationships governing the behavior of defects in materials. We demonstrate several examples of the approach for three technologically relevant materials and highlight current pitfalls that must be considered when employing these methodologies as well as their potential solutions.

36 MATERIALS SCIENCE↗

High-Temperature Thermodynamics Modeling of Graphite

We present high-temperature thermodynamic properties for graphite from first-principles anharmonic theory. The ab initio electronic structure is obtained from density-functional theory coupled to a lattice dynamics method that is used to model anharmonic lattice vibrations. This combined approach produces free energies and specific heats for graphite that compare well with available experiments and results from models that empirically represent experimental data, such as CALPHAD. We show that anharmonic theory for the phonons is essential for accurate thermodynamic quantities above about 1000 K.

36 MATERIALS SCIENCE↗

Elucidating the local atomic and electronic structure of amorphous oxidized superconducting niobium films

Qubits made from superconducting materials are a mature platform for quantum information science application, such as quantum computing. However, material-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate material-based decoherence channels. Here, we characterize the atomic structure of the native oxide film formed on Nb resonators by comparing fluctuation electron microscopy experiments to density functional theory calculations, finding that an amorphous layer is consistent with an Nb 2 O 5 stoichiometry. Comparing x-ray absorption measurements at the Oxygen K edge with first-principles calculations, we find evidence of d-type magnetic impurities in our sample, known to cause impedance in proximal superconductors. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors and shows that soft x-ray absorption can fingerprint magnetic impurities in these superconducting systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

TaTi_BCC_SolidSolution_128atoms_VASP6

We performed density functional theory (DFT) calculations for body-centered-cubic (BCC) structures with 128 lattices sites of solid solution binary alloys tantalum-titanium (Ta-Ti). The electronic structures of alloys have been calculated using Vienna Ab initio Simulation Package (VASP). Within this package the DFT approach is used to reduce many-body Schrodinger equation to set of single particle Kohn-Sham (KS) equations. The generalized electronic exchange-correlation functional is described by generalized gradient approximation with the Perdew-Burke-Ernzerhof parametrization. The electron-ion interactions is described by pseudopotentials developed within the plane-wave basis projector augmented-wave (PAW) approach. These pseudopotentials are available at the VASP portal (http://cms.mpi.univie.ac.at/vasp/). Our calculations have been run with the pseudopotentials treating s and p semi-core states as valence in case for the elements Hf and Nb. The electronic densities and potentials are expanded over plane-waves with energy cutoff of 350 eV. 2x2x2 k-mesh and normal precision were used. The alloys were modeled by supercell containing 128 randomly distributed atoms. At initial step the atoms occupy perfect bcc lattice cites. This initial structure was optimized until energy changes less than 1e-6 eV, while forces acting on atoms don't exceed 1e-2 eV/angstrom. The electron-ion interaction is described by PAW pseudopotentials. The calculations have been collected by sampling chemical compositions across the entire compositional range. The chemical compositions have been sampled by progressively changing the number of atoms per constituent by 4. For each chemical composition of binaries and ternaries, the first-principle calculations have been run for 100 randomized arrangements of the constituents on the BCC lattice sites. We collected data for a total of 3,100 randomized atomic structures over 31 chemical compositions. The calculations have been collected on Air Force HPC11 cluster using the VASP 6.5.1. Additional methodology and file structure information is available in the dataset README.txt file.

36 MATERIALS SCIENCE↗

High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films

Wurtzite aluminum nitride (AlN) has attracted increasing attention for high-power and high-temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large thermal conductivity k. The k of epitaxially grown AlN on foreign substrates has been investigated; however, no thermal studies have been conducted on homoepitaxially grown AlN. In this study, the thickness dependent k and thermal boundary conductance G of homoepitaxial AlN thin films were systematically studied using the optical pump–probe method of frequency-domain thermoreflectance. Our results show that k increases with the thickness and k values are among the highest reported for film thicknesses of 200 nm, 500 nm, and 1 μm, with values of 71.95, 152.04, and 195.71 W/(mK), respectively. Our first-principles calculations show good agreement with our measured data. Remarkably, the G between the epilayer and the substrate reported high values of 328, 477, 1180, and 2590 MW/(m 2 K) for sample thicknesses of 200 nm, 500 nm, 1 μm, and 3 μm, respectively. The high k and ultrahigh G of homoepitaxially grown AlN are very promising for efficient heat dissipation, which helps in device design and has advanced applications in micro-electromechanical systems, ultraviolet photonics, and high-power electronics.

36 MATERIALS SCIENCE↗