Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “FILM”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Structural and optical studies of chemically deposited Sn{sub 2}S{sub 3} thin films

Highlights: ► Sn{sub 2}S{sub 3} films were deposited at 30 °C by chemical bath deposition. ► The deposition time of the chemical bath was adjusted to 20 h, 22 h, and 24 h. ► Effect of deposition time on structural and optical properties of Sn{sub 2}S{sub 3} thin films were investigated. ► The presence of characteristic bonds of Sn{sub 2}S{sub 3} was observed from Raman shift experiment. ► The direct band gap of thin films constant were calculated. -- Abstract: Sn{sub 2}S{sub 3} thin films were grown on commercial glass substrates by chemical bath deposition at room temperature. The structural and optical properties of Sn{sub 2}S{sub 3} thin films were studied as a function of deposition time. The thin films were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and UV–vis spectroscopy. The XRD pattern showed that the Sn{sub 2}S{sub 3} thin films had an orthorhombic polycrystalline structure. The lattice constants of the thin films were a = 8.741 Å, b = 14.034 Å and c = 3.728 Å. The characteristic bonds of Sn{sub 2}S{sub 3} were observed at 66.3, 111.7, 224.7 and 308.9 cm{sup −1} using Raman shift experiment. The optical energy band gap of the thin films decreased from 2.12 eV to 2.03 eV with increasing deposition time from 20 to 24 h. The optical constants of the thin films were obtained using the experimentally recorded transmission data as a function of the wavelength.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Preparation and optical properties of Zn{sub 0.85}Sb{sub 0.1}O alloy films

Graphical abstract: Top SEM image (a) and SAED pattern (b) of ZnSbO film grown on Si(1 1 1) substrate at 600 °C. Highlights: ► We discuss the deposition of ZnSbO thin films by pulsed laser deposition (PLD). ► The films showed a high resistivity of ∼10{sup 4} Ω cm, suggesting the efficient compensation of intrinsic donor-like defects. ► The ternary Zn{sub 0.9}Sb{sub 0.1}O film show a reduction in the band gap of ∼ 40 meV with reference to undoped ZnO films. - Abstract: Zn{sub 0.85}Sb{sub 0.1}O films were synthesized by pulsed laser deposition (PLD). The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements were carried out to evaluate the microstructure of the films. These films exhibited a single-phase hexagonal structure with (0 0 2) preferred orientation, despite the high Sb content of ∼10% and the resulting large lattice distortion in the films. Moreover, the films showed semiconductor properties with high resistivity of ∼10{sup 4} Ω cm, which was possibly related to a compensation of intrinsic defects. Compared with the undoped ZnO, a reduction in the band gap by 40 meV was clearly observed in ultraviolet–visible absorption spectra.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Directly patternable SnO{sub 2} thin films incorporating Pt nanoparticles

Highlights: • Direct-patterning of SnO{sub 2} films incorporated with Pt nanoparticles. • Pt incorporated SnO{sub 2} thin films by using photochemical solution deposition. • Reduction catalytic behavior of Pt nanoparticles. • Progress reduction of SnO{sub 2} with increasing amount of Pt nanoparticles. • Enhanced electrical conductivity of SnO{sub 2} films with Pt nanoparticles incorporation. - Abstract: Direct-patterning of SnO{sub 2} films incorporating Pt nanoparticles was performed by using a photochemical solution deposition without a photoresist or dry etching. Incorporating Pt nanoparticles into these films had a slight effect on their crystallinity and almost no effect on their transmittance. The inclusion of Pt nanoparticles enhanced the electrical conductivity of the SnO{sub 2} thin films compared to their pristine forms. The chemical bonding state of the films was analyzed by X-ray photoelectron spectroscopy to investigate the effect of the Pt nanoparticles on the carrier concentration in the film. It was concluded that the reduction of SnO{sub 2} thin films by Pt nanoparticles progressed as a result of the presence of the Pt nanoparticles, causing an oxygen deficiency to develop in SnO{sub 2} and thereby influencing the carrier concentration of the film.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structural, electrical and magnetic properties of (Bi{sub 0.9}RE{sub 0.1})(Fe{sub 0.97}Co{sub 0.03})O{sub 3} (RE = Nd and Gd) thin films

Highlights: • Nd–Co and Gd–Co codoped BiFeO{sub 3} thin films are synthesized by chemical solution deposition method. • Enhanced magnetic property is observed in BGFC thin film at room temperature. • The onset electric field of FN tunneling of the films is associated with band gaps. • Both ferromagnetism and diamagnetism coexist in the BNFC film. - Abstract: Rhombohedral (Bi{sub 0.9}RE{sub 0.1})(Fe{sub 0.97}Co{sub 0.03})O{sub 3} (RE = Nd and Gd) thin films were deposited on FTO substrates by using a chemical solution deposition method. Raman scattering spectra reveal that the BiFeO{sub 3} lattices are able to incorporate Nd/Gd and Co ions with no effect on the basic rhombohedral structure. The chemical shift of Bi 4f, Fe 2p and O 1s core levels of the films is investigated by the X-ray photoelectron spectroscopy (XPS) analysis. The presence of defects in the films has been estimated through XPS study, which has a great effect on the dielectric dispersion and ferroelectric polarization. The intrinsic density of free electrons associated with band gap is the dominating factor which controls the FN tunneling conductance mechanism of the films. Both ferromagnetism and diamagnetism coexist in the BNFC film, while only ferromagnetism is observed in the BGFC film.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The role of cobalt doping on magnetic and optical properties of indium oxide nanostructured thin film prepared by sol–gel method

Highlights: • Cobalt doped indium oxide thin films have been prepared by a sol–gel method. • The films have a thickness less than 100 nm and grain size less than 10 nm. • The lattice parameters and grain size of films decrease as Co content increase. • The optical band gap of films increases as the grain size decrease. • The films' magnetic behaviour is sensitive to ratio of oxygen defects per Co ions. - Abstract: The effect of Co doping concentration, (x = 0.025–0.2), in In{sub 2−x}Co{sub x}O{sub 3} thin film was investigated by X-rays diffraction (XRD), transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Ultraviolet visible spectrophotometer (UV–vis) and vibrating sample magnetometer (VSM). All films were prepared by sol–gel technique followed by spin coating process. The XRD and XPS measurements indicate that Co{sup +2} has been successfully substituted in In{sup +3} site. The TEM measurement shows nanostructure morphology of the films. The doping of Co in indium oxide resulted in a decrease in the lattice parameters and grain size while the band gap increased with increasing Co concentration. Further, by comparing VSM and XPS results, the magnetic behaviour of the films were found to be sensitive to Co concentrations, oxygen vacancies and ratio of oxygen defects to Co concentrations. The magnetic behaviour of the prepared films was explained using bound magnetic polaron (BMP) model.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effects of molybdenum doping and thermal annealing on the physical properties of amorphous In–Zn–O films

Highlights: • The effects of Mo doping and thermal annealing on a-IZO films were studied. • The carrier mobility of Mo-doped a-IZO films was enhanced by thermal annealing. • The optical bandgap of a-IZO films was unaffected by Mo doping. • Ferromagnetism was observed in Mo-doped a-IZO films after annealing. - Abstract: Amorphous In–Zn–O (a-IZO) films doped with Mo were prepared on glass substrates by using magnetron co-sputtering technique. The Mo concentration was controlled by varying the sputtering power applied on the Mo target. The effects of Mo doping and thermal annealing on the electrical, optical and magnetic properties of the a-IZO films were studied. The electrical properties of a-IZO films were found to be strongly affected by Mo doping and thermal annealing. The optical transmission near the absorption edge of a-IZO films is enhanced by Mo doping due to the decrease in reflection. The optical bandgap estimated to be 3.2 eV of a-IZO films is unaffected by Mo doping and thermal annealing. Moreover, some of Mo-doped films exhibit room-temperature ferromagnetism after annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A facile strategy to fabricate plasmonic Cu modified TiO{sub 2} nano-flower films for photocatalytic reduction of CO{sub 2} to methanol

Graphical abstract: Photoreduction of CO{sub 2} to CH{sub 3}OH over plasmonic Cu/TiO{sub 2} film. - Highlights: • Cu nanoparticles modified TiO{sub 2} nano-flower film was prepared by a facile strategy. • Cu nanoparticles can enhance the light absorption and the Raman scattering of TiO{sub 2}. • Cu nanoparticles can effectively restrain the recombination of the charge carriers. • A synergistic mechanism is proposed for photocatalytic reduction of CO{sub 2} on Cu/TiO{sub 2} film. - Abstract: Cu nanoparticles (NPs) deposited TiO{sub 2} nano-flower films were fabricated using a combination of a hydrothermal method and a microwave-assisted reduction process. The investigations indicated that Cu NPs and TiO{sub 2} film both exhibit visible light harvesting properties based on localized surface plasmon resonance (LSPR) of Cu NPs and unique nanostructures of TiO{sub 2} film. Fluorescence quenching was observed because the recombination of charge carriers was effectively suppressed by Cu NPs deposition. The experimental results indicate that Cu/TiO{sub 2} films exhibit better activity for the photocatalytic reduction of CO{sub 2} due to the charge transfer property and LSPR effect of Cu NPs. The CH{sub 3}OH production rate reached 1.8 μmol cm{sup −2} h{sup −1} (energy efficiency was 0.8%) over 0.5 Cu/TiO{sub 2} film under UV and visible light irradiation, which was 6.0 times higher than that observed over pure TiO{sub 2} film. In addition, a tentative photocatalytic mechanism is proposed to understand the experimental results over the Cu modified TiO{sub 2} nano-flower films.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Hierarchically macro–mesoporous TiO{sub 2} film via self-assembled strategy for enhanced efficiency of dye sensitized solar cells

Highlights: • A new hierarchically macro–mesoporous TiO{sub 2} film is fabricated via TiF{sub 4} hydrolysis. • TiF{sub 4} hydrolysis is accompanied with self-assembled process of TiO{sub 2} nanoparticles. • The hierarchically porous TiO{sub 2} films show higher performance than nonporous film. - Abstract: The hierarchically porous structure of TiO{sub 2} film plays an important role on improved photoelectric conversion efficiency in dye-sensitized solar cells (DSSCs). It is highly required to develop a facile strategy to prepare the hierarchical porous photoelectrode. In this study, a novel hierarchically macro–mesoporous TiO{sub 2} film as photoelectrode of DSSCs is fabricated by a self-assembled process of TiO{sub 2} nanoparticles via TiF{sub 4} hydrolysis. The hydrolysis of TiF{sub 4} is accompanied with self-assembled process of TiO{sub 2} nanoparticles on the surface of electrophoretic-deposited titanate nanotube film which provides effective active sites for the deposition of TiO{sub 2} nanoparticles owing to a large amount of hydroxyl groups, resulting in the formation of hierarchically porous structures. The hierarchically porous TiO{sub 2} film is mainly composed of mesopores with a size of 2–50 nm and macropores with a wide range of 0.5–5 μm, which contribute to an obviously higher conversion performance (6.70%) than nonporous P25-TiO{sub 2} film (4.01%). The main reasons for enhanced conversion efficiency of hierarchically porous TiO{sub 2} film can be attributed to adsorption of more dye molecules, rapid diffusion and efficient transport of electrolyte, and longer electron lifetime. This work may provide new insights into preparing porous structure of TiO{sub 2} films in DSSCs for modification of photoelectric conversion efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Ferroelectric and dielectric study of strontium tantalum based perovskite oxynitride films deposited by reactive rf magnetron sputtering

Highlights: • Oxynitride perovskite thin films were deposited by reactive sputtering. • Films are textured or epitaxially grown on MgO and Nb-SrTiO{sub 3} substrates. • Local piezoelectric and ferroelectric behavior was highlighted by PFM. • A 1600 nm-thick film presents a permittivity of 175 at 10 kHz and RT. • Permittivity is around 65 in high frequency range. - Abstract: Strontium and tantalum based oxynitride perovskite thin films were deposited by reactive magnetron sputtering. Epitaxial films deposited on Nb-SrTiO{sub 3} substrates show smooth surfaces with roughness values from 1.5 to 3.6 nm for a thickness of films in the range 20–1600 nm. The samples are yellow with band gap values around 2.35 eV. Piezo-force microscopy characterization pointed out the local piezoelectric and ferroelectric behavior of the oxynitride perovskite films. In the low frequency range, the 1600 nm-thick film exhibits a permittivity of 175 at 10 kHz, with dielectric losses of 0.055. Permittivity is lowered in high frequencies with a value around 65 obtained on a 1520 nm-thick film deposited on MgO substrate, which is textured with a preferential c-axis orientation. No accordability of the permittivity was highlighted at a macroscopic scale. The moderate crystallographic strain evidenced in the 20 nm thin film does not induce a high permittivity.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Role of ferroelectric/ferromagnetic layers on the ferroelectric properties of magnetoelectric composite films derived by chemical solution deposition

Highlights: • Multiferroic composite films with different components were prepared. • Individual layer effect on the properties of composite films was studied. • BTO-CFO film shows bigger ferroelectric polarization than BTO-BFO film. • Leakage current curves show BTO-CFO film has the smallest leakage current. • Leakage current is dominated by the space-charges-limited mechanisms. - Abstract: Composite thin films with BiFeO{sub 3} (BFO), CoFeO{sub 4} (CFO) and/or BaTiO{sub 3} (BTO) layers as the components are fabricated via CSD method. XRD and Raman patterns show all the composite films can be indexed to perovskite and spinel structures. Except the interfaces between BTO and CFO layers, the other two-phase interfaces can be clearly observed. Interestingly, the BTO-CFO film has bigger polarization than BTO-BFO, especially the thickness of CFO layer is smaller than the BFO layer, implying the ferromagnetic layer has a significant impact on the ferroelectric properties of the composite films, which is too thin to be fully polarized. The variation of leakage currents show BTO-CFO film has the smallest value, corroborating the results of ferroelectric measurements. The leakage current is dominated by the space-charges-limited mechanisms according to the fitting results, and the oxygen vacancies in the BFO layers play an important role for the variations of E{sub SCL} and E{sub TFL} voltages.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of oxygen vacancies and Ag deposition on the magnetic properties of Ag/N co-doped TiO2 single-crystal films

Highlights: • Photochemical deposition method to prepare Ag-doped TiO{sub 2} samples. • TiO{sub 2} single crystal films are used for studying room temperature ferromagnetism origin. • Ag element is deposited on TiO{sub 2} single crystal films surface in the form of Ag particles. • Oxygen vacancies and Ag particles synergy influence the ferromagnetism in samples. - Abstract: We employ TiO{sub 2} single-crystal films as a substrate and use a photochemical deposition method to prepare Ag-doped and Ag/N co-doped TiO{sub 2} single-crystal films. We also investigate the optical and magnetic properties of the samples using various measurements. No diffraction peaks related to silver oxide appear in the X-ray diffraction (XRD) spectra, which implies the existence of Ag atoms in Ag-doped TiO{sub 2} single-crystal films. X-ray photoelectron spectroscopy (XPS) spectra indicate the existence of Ti{sup 4+} and Ag° in Ag/N co-doped TiO{sub 2} single-crystal films. It is found that Ag is deposited on a TiO{sub 2} single-crystal film surface in the form of Ag particles. Meanwhile, Ag particles can slightly enhance ferromagnetism in Ag-doped TiO{sub 2} single-crystal films compared with the TiO{sub 2} single-crystal film sample. Oxygen vacancies and Ag particle synergy influence ferromagnetism in Ag/N co-doped TiO{sub 2} single-crystal films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Optical, morphological and durability studies of quaternary chalcogenide Ge-Sb(As)-(S,Te) films

Highlights: • Films of two glassy chalcogenide systems of Ge{sub x}-Sb/As{sub 40-x}-S{sub 50}-Te{sub 10} were studied. • Optical constants as function of films composition are obtained in 0.25–30 μm range. • The transparent zone of the films is in the (0.6–2.5) μm spectral range. • The vibrational modes were determined from IR-SE, FTIR and Raman. • The stability of the films after QT was proved by AFM, SEM and SE analyses. - Abstract: Thin films from two glassy systems of Ge{sub x}Sb{sub 40-x}S{sub 50}Te{sub 10} and Ge{sub x}As{sub 40-x}S{sub 50}Te{sub 10}, with compositions x = 10, 20 and 27 at. %, were deposited on optical glass substrates by vacuum thermal evaporation of powdered parent chalcogenide glasses. The complex refractive index and dielectric constants of the films are determined by ellipsometry in a wide spectral range of 0.25–30 μm. In the transparent spectral region of 0.6–2.5 μm the refractive index values are within 2.9–2.3 and 3.3–2.4 for the As-contained and Sb-contained films, respectively. From the IR and Raman data analysis the basic chemical and oxygen-related impurity bonds are identified. The films durability properties were established by applying the US Military Standard quality tests. The quality-test-induced-changes in surface morphology were evaluated. The films are relatively stable after quality test treatments, which cause a small degree of densification and surface roughening for Sb-containing films and surface flattening for As-containing ones.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Scanning angle Raman spectroscopy: A nondestructive method for simultaneously determining mixed polymer fractional composition and film thickness

A scanning angle (SA) Raman spectroscopy method was developed to simultaneously measure the chemical composition and thickness of waveguide mixed polymer films with varying fractional compositions. In order to test the method, six films of polystyrene-block-poly(methyl methacrylate), some mixed with poly(methyl methacrylate) homopolymer (PS-b-PMMA:PMMA), and two films of poly(2-vinylnapthalene)-block-poly(methyl methacrylate) (P2VN-b-PMMA) were prepared. The film thickness ranged from 495 to 971 nm. The chemical composition and thickness of PS-b-PMMA:PMMA films was varied by the addition of the PMMA homopolymer and annealing the films in toluene. SA Raman peak amplitude ratios (1001 cm -1 for PS, 812 cm -1 for PMMA, and 1388 cm -1 for P2VN) were used to calculate the refractive index of the polymer film, an input parameter in calculations of the sum square electric field (SSEF). The film thickness was determined by SSEF models of the experimental Raman amplitudes versus the incident angle of light. The average film thickness determined by the developed SA Raman spectroscopy method was within 5% of the value determined by optical profilometry. In conclusion, SA Raman spectroscopy will be useful for in situ label-free analyses of mixed polymer waveguide films.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Structural and Electrocatalytic Studies of Pulsed Laser Deposited Epitaxial RuO 2 Thin Films

Two sets of high-quality epitaxial ruthenium oxide (RuO 2 ) thin films with different thicknesses were synthesized in situ on cost-competitive sapphire substrates by using a pulsed laser deposition technique. The first set of films, with a thickness of 40 nm and a sheet resistance of 15.7 Ω/□, was prepared using 2100 laser pulses, while the second set of films, with a thickness of 87 nm and a sheet resistance of 6.7 Ω/□, was prepared using 4800 laser pulses. All other deposition parameters were kept the same. The post-deposition structural and morphological measurements showed that both sets of films grew at the same growth rate, had the same crystallinity, similar grain boundary density, and slightly different surface roughness. The thicker RuO 2 films achieved an overpotential of 280 mV for the oxygen evolution reaction at a current density of 100 μA/cm 2 , comparable to or exceeding the performance of films grown on more expensive substrates. Comparatively, the thinner RuO 2 films, which have a significantly higher charge transfer resistance (250 Ω versus 100 Ω for thick films), display a higher overpotential of 320 mV. These results indicate that the lower electrical resistance of thicker films promotes charge transfer through the film body, leading to superior electrocatalytic properties.

charge-transfer↗
DOE OSTI2012

Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

Vanadium oxide (VO{sub x}) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 {+-} 6 and 2901 {+-} 30 A thick, which were then optically and electrically characterized. The complex dielectric function spectra ({epsilon} = {epsilon}{sub 1} + i{epsilon}{sub 2}) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VO{sub x} samples. Significant changes in {epsilon} and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 A of the top surface of the deposited film to become more electrically resistive as evidenced by variations in {epsilon}. Exposure of the VO{sub x} thin film to atmospheric conditions introduces a similar change in {epsilon}, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VO{sub x} films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Lattice mismatch-induced evolution of microstructural properties in FePt films

FePt (10, 20, 40, and 60 nm) films were fabricated on four different single crystal substrates [MgO (001), KTaO{sub 3} (001), SrTiO{sub 3} (001), and LaAlO{sub 3} (001)], and the effects of lattice mismatch on the microstructure and magnetic properties of FePt films were systematically investigated. The X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) results showed that the different lattice mismatch between the substrates and FePt films resulted in the different crystallographic texture and microstructure of the FePt films. Under the tensile strain between the FePt and substrates (MgO, KTaO{sub 3}, SrTiO{sub 3}), the FePt films preferred to form L1{sub 0} FePt (001) texture. The perpendicular anisotropy of the FePt films grown on MgO was larger than that grown on KTaO{sub 3} and SrTiO{sub 3}. For the FePt films grown on the LaAlO{sub 3} substrate, both FePt (110) and (001) orientations were found, which indicated the presence of tensile and compressive strain, respectively. With the reduction of the lattice mismatch between the FePt (10 nm) and substrate from 5.8% (MgO) to 2.4% (KTaO{sub 3}), and 0.1% (SrTiO{sub 3}), the microstructure of the FePt films changed gradually from granular to continuous films (SEM and TEM results). The microstructure of the 10 nm FePt film grown on LaAlO{sub 3} substrate showed granular structure.

36 MATERIALS SCIENCE↗