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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

An ITPA joint experiment to study runaway electron generation and suppression

Recent results from an ITPA joint experiment to study the onset, growth, and decay of relativistic electrons (REs) indicate that loss mechanisms other than collisional damping may play a dominant role in the dynamics of the RE population, even during the quiescent I{sub p} flattop. Understanding the physics of RE growth and mitigation is motivated by the theoretical prediction that disruptions of full-current (15 MA) ITER discharges could generate up to 10 MA of REs with 10–20 MeV energies. The ITPA MHD group is conducting a joint experiment to measure the RE detection threshold conditions on a number of tokamaks under quasi-steady-state conditions in which V{sub loop}, n{sub e}, and REs can be well-diagnosed and compared to collisional theory. Data from DIII-D, C-Mod, FTU, KSTAR, and TEXTOR have been obtained so far, and the consensus to date is that the threshold E-field is significantly higher than predicted by relativistic collisional theory, or conversely, the density required to damp REs is significantly less than predicted, which could have significant implications for RE mitigation on ITER.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Narrowing the error in electron correlation calculations by basis set re-hierarchization and use of the unified singlet and triplet electron-pair extrapolation scheme: Application to a test set of 106 systems

A method previously suggested to calculate the correlation energy at the complete one-electron basis set limit by reassignment of the basis hierarchical numbers and use of the unified singlet- and triplet-pair extrapolation scheme is applied to a test set of 106 systems, some with up to 48 electrons. The approach is utilized to obtain extrapolated correlation energies from raw values calculated with second-order Møller-Plesset perturbation theory and the coupled-cluster singles and doubles excitations method, some of the latter also with the perturbative triples corrections. The calculated correlation energies have also been used to predict atomization energies within an additive scheme. Good agreement is obtained with the best available estimates even when the (d, t) pair of hierarchical numbers is utilized to perform the extrapolations. This conceivably justifies that there is no strong reason to exclude double-zeta energies in extrapolations, especially if the basis is calibrated to comply with the theoretical model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

The study of the transition regime between slab and mixed slab-toroidal electron temperature gradient modes in a basic experiment

Electron temperature gradient (ETG) modes are suspected sources of anomalous electron thermal transport in magnetically confined plasmas as in tokamaks. Prior work in the Columbia Linear Machine (CLM) has been able to produce and identify slab ETG modes in a slab geometry [Wei et al., Phys. Plasmas 17, 042108 (2010)]. Now by modifying CLM to introduce curvature to the confining axial magnetic field, we have excited mixed slab-toroidal modes. Linear theory predicts a transition between slab and toroidal ETG modes when (k{sub ∥}R{sub c})/(k{sub y}ρ) ∼1 [J. Kim and W. Horton, Phys. Fluids B 3, 1167 (1991)]. We observe changes in the mode amplitude for levels of curvature R{sub c}{sup −1}≪(k{sub ∥,slab})/(k{sub ⊥}ρ) , which may be explained by reductions in k{sub ∥} in the transition from slab to mixed slab-toroidal modes, as also predicted by theory. We present mode amplitude scaling as a function of magnetic field curvature. Over the range of curvature available in CLM experimentally we find a modest increase in saturated ETG potential fluctuations (∼1.5×), and a substantial increase in the power density of individual mode peaks (∼4–5×)

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Electronic and Optical Properties of a Semiconducting Spinel (Fe 2 CrO 4 )

Epitaxial chromium ferrite (Fe 2 CrO 4 ), prepared by state-of-the-art oxygen plasma assisted molecular beam epitaxy, is shown to exhibit unusual electronic transport properties driven by the crystallographic structure and composition of the material. By replacing 1/3 of the Fe cations with Cr converts the host ferrimagnet from a metal into a semiconductor by virtue of its fixed valence (3+); Cr substitutes for Fe at B sites in the spinel lattice. Conversely, replacing 2/3 of the Fe cations with Cr results in an insulator. Three candidate conductive paths, all involving electron hopping between Fe 2+ and Fe 3+ , are identified in Fe 2 CrO 4 . Moreover, Fe 2 CrO 4 is shown to be photoconductive across the visible portion of the electromagnetic spectrum. As a result, this material is of potential interest for important photo-electrochemical processes such as water splitting.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Surface and Interface Properties in Thin‐Film Solar Cells: Using Soft X‐rays and Electrons to Unravel the Electronic and Chemical Structure

Abstract Thin‐film solar cells have great potential to overtake the currently dominant silicon‐based solar cell technologies in a strongly growing market. Such thin‐film devices consist of a multilayer structure, for which charge‐carrier transport across interfaces plays a crucial role in minimizing the associated recombination losses and achieving high solar conversion efficiencies. Further development can strongly profit from a high‐level characterization that gives a local, electronic, and chemical picture of the interface properties, which allows for an insight‐driven optimization. Herein, the authors' recent progress of applying a “toolbox” of high‐level laboratory‐ and synchrotron‐based electron and soft X‐ray spectroscopies to characterize the chemical and electronic properties of such applied interfaces is provided. With this toolbox in hand, the activities are paired with those of experts in thin‐film solar cell preparation at the cutting edge of current developments to obtain a deeper understanding of the recent improvements in the field, e.g., by studying the influence of so‐called “post‐deposition treatments”, as well as characterizing the properties of interfaces with alternative buffer layer materials that give superior efficiencies on large, module‐sized areas.

Weinhardt, Lothar↗
DOE OSTI2018

A Two-Electron Storage Nonaqueous Organic Redox Flow Battery

We demonstrated a two-electron nonaqueous redox flow battery based on structurally tailored organic phenothiazine catholyte and anthraquinone anolyte materials, with doubled charge storage capacities and two voltage plateaus observed in electrochemical cell tests.

Huang, Jinhua↗
DOE OSTI2017

Experimental and DFT Studies of the Electron-Withdrawing Ability of Perfluoroalkyl (R F ) Groups: Electron Affinities of PAH(R F ) n Increase Significantly with Increasing R F Chain Length

Two series of aromatic compounds with perfluoroalkyl (RF) groups of increasing length, 1,3,5,7-naphthalene(RF)4 and 1,3,5,7,9-corannulene(RF)5, have been prepared and their electronic properties studied by low-temperature PES (i.e., gas-phase electron affinity (EA) measurements). These and many related compounds were also studied by DFT calculations. The data demonstrate unambiguously that the electron-withdrawing ability of RF substituents increases significantly and uniformly from CF3 to C2F5 to n-C3F7 to n-C4F9.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2021

Controlling hydrocarbon transport and electron beam induced deposition on single layer graphene: Toward atomic scale synthesis in the scanning transmission electron microscope

Abstract Focused electron beam induced deposition (FEBID) is a direct write technique for depositing materials on a support substrate akin to 3D printing with an electron beam (e‐beam). Opportunities exist for merging this existing technique with aberration‐corrected scanning transmission electron microscopy to achieve molecular‐ or atomic‐level spatial precision. Several demonstrations have been performed using graphene as the support substrate. A common challenge that arises during this process is e‐beam‐induced hydrocarbon deposition, suggesting greater control over the sample environment is needed. Various strategies exist for cleaning graphene in situ. One of the most effective methods is to rapidly heat to high temperatures, for example, 600℃ or higher. While this can produce large areas of what appears to be atomically clean graphene, mobile hydrocarbons can still be present on the surfaces. Here, we show that these hydrocarbons are primarily limited to surface migration and demonstrate an effective method for interrupting the flow using e‐beam deposition to form corralled hydrocarbon regions. This strategy is effective for maintaining atomically clean graphene at high temperatures where hydrocarbon mobility can lead to substantial accumulation of unwanted e‐beam deposition.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparison Between the f-Electron and Conduction-Electron Density of States in the Falicov-Kimball Model at Low Temperature

The spinless Falicov-Kimball model is one of the simplest models of many-body physics. While the conduction-electron density of states is temperature independent in the normal state, the f -electron density of states is strongly temperature dependent—it has an orthogonality catastrophe singularity in the metallic phase and is gapped in the insulating phase. The question we address here is whether the spectral gap is the same for both electron species as T → 0. Finally, we find strong evidence to indicate that the answer is affirmative.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Complete collision data set for electrons scattering on molecular hydrogen and its isotopologues: IV. Vibrationally-resolved ionization of the ground and excited electronic states

Here, we present a comprehensive set of vibrationally-resolved cross sections for electron-impact ionization of molecular hydrogen and its isotopologues (H 2 , D 2 , T 2 , HD, HT, and DT) in both the ground and excited electronic states. We apply the adiabatic-nuclei molecular convergent close-coupling (MCCC) method to calculate cross sections from threshold to 1000 eV for ionization of the ground and excited vibrational levels of the X 1 Σ$^{+}_{g}$, B 1 Σ$^{+}_{u}$, C 1 π u , EF 1 Σ$^{+}_{g}$, a 3 Σ$^{+}_{g}$, and c 3 π u electronic states, representing all states with united-atoms-limit principle quantum number n=1–2. The cross sections are presented in graphical form and provided as both numerical values and analytic fit functions in supplementary data files. The data can also be downloaded from the MCCC database at mccc-db.org.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2015

Effects of cation compositions on the electronic properties and optical dispersion of indium zinc tin oxide thin films by electron spectroscopy

Highlights: • REELS analysis can provide optical dispersion and electronic properties of oxide materials. • The band gap varied with In/Zn/Sn compositions and increased after annealing. • The optical properties were examined using REELS in conjunction with the Tougaard–Yubero model. • The dispersion parameters were determined by a single-oscillator Wemple–DiDomenico model. • The Zn and Sn contents play a crucial role in determining the single-oscillator constant and dispersion energy of IZTO thin films. - Abstract: The electronic properties and optical dispersion of indium zinc tin oxide (IZTO) films with different cation compositions were investigated by reflection electron energy loss spectroscopy (REELS). The REELS spectra of IZTO films revealed that the band gap varied with different Sn/Zn ratios and In content. The optical properties were examined with REELS data using Tougaard–Yubero model and the results were compared with the envelope of the transmission spectra obtained using a UV-spectrometer. The dispersion behavior of the refractive index from REELS results was studied in terms of the single-oscillator Wemple–DiDomenico model. The results showed that the different compositions of In/Zn/Sn caused a change in the dispersion parameters of IZTO thin films in contrast to the static values of refractive indices and dielectric constant which remained the same. Our work demonstrated that REELS is an efficient tool to study the optical properties of a material by obtaining the optical parameters.

36 MATERIALS SCIENCE↗