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At least 1,081 records · Page 60

Redox active polymer devices and methods of using and manufacturing the same

The disclosed technology relates generally to apparatuses comprising conductive polymers and more particularly to tags and tag devices comprising a redox-active polymer film, and methods of using and manufacturing the same. In one aspect, an apparatus includes a substrate and a conductive structure formed on the substrate which includes a layer of redox-active polymer film having mobile ions and electrons. The conductive structure further includes a first terminal and a second terminal configured to receive an electrical signal therebetween, where the layer of redox-active polymer is configured to conduct an electrical current generated by the mobile ions and the electrons in response to the electrical signal. The apparatus additionally includes a detection circuit operatively coupled to the conductive structure and configured to detect the electrical current flowing through the conductive structure.

Friesen, Cody A.↗

Variable stiffness flyer plate for penetration device

A penetration device including a casing, a propellant positioned in the casing, and a flyer plate. The flyer plate is coupled to the casing and adjacent to the propellant. The flyer plate includes a center portion having a substantially constant first thickness and includes a peripheral portion around the center portion and defining an edge. The peripheral portion includes one or more recesses in a first surface of the peripheral portion.

Muha, Nicholas B.↗

Electronic device and method for compressing sampled data

An electronic device for compressing sampled data comprises a memory element and a processing element. The memory element is configured to store sampled data points and sampled times. The processing element is in electronic communication with the memory element and is configured to receive a plurality of sampled data points, a slope for each sampled data point in succession, the slope being a value of a change between the sampled data point and its successive sampled data point, and store the sampled data point in the memory element when the slope changes in value from a previous sampled data point.

Morrow, Mitchell Hedges↗

Multilayer carbon nanotube film-containing devices

The present disclosure relates to a device that includes an active layer and a first charge transport layer, where the first charge transport layer includes a first layer and a second layer, the first layer is in contact with the second layer, the second layer is positioned between the first layer and the active layer, the first layer comprises a first carbon nanostructure, and the second layer includes a second carbon nanostructure.

Wheeler, Lance Michael↗

Ultraviolet (UV) light emitting device (LED) driven photocathode

An apparatus includes an electromechanical x-ray generator (MEXRAY) configured to charged capacitors using a small, high-voltage direct current. The apparatus also includes an ultraviolet (UV) light emitting diode (LED) driven photocathode device configured to control/modulate an electron dose rate of the MEXRAY or other vacuum DC, source.

Watson, Scott Avery↗

Architecture Of A Multi-channel Data Streaming Device With An Fpga As A Coprocessor

The design of a data acquisition system often involves the integration of a Field Programmable Gate Array (FPGA) with analog front-end components to achieve precise timing and control. Reuse of these hardware systems can be difficult since they need to be tightly coupled to the communications interface and timing requirements of the specific ADC used. A hybrid design exploring the use of FPGA as a coprocessor to a traditional CPU in a dataflow architecture is presented. Reduction in the volume of data and gradual transitioning of data processing away from a hard real-time environment are both discussed. Chief design concerns, including data throughput and precise synchronization with external stimuli, are addressed. The discussion is illustrated by the implementation of a multi-channel digital integrator, a device based entirely on commercial off-the-shelf (COTS) equipment.

Nogiec, Jerzy M.↗

Motivation and Development of a Compact Superconducting Accelerator for X-ray Medical Device Sterilization

Fermilab is developing a compact superconducting (CSRF) accelerator as a source of a high-power, high-energy electron beam to produce an x-ray beam comparable to $\geq$ 2 MCi of cobalt-60. As part of this development, we are presently assembling a 20 kW, 1.6 MeV prototype that incorporates the four enabling technologies described below. These technologies support a heat budget that is within the capacity of commercially available cryocoolers and eliminate the need for liquid cryogens. The use of superconducting technologies promises efficiencies, wall-plug to beam, of 80% or greater. A summary of the design and progress to date will be given. In addition, we will present a review of developments within the medical device sterilization industry that are motivating the development of this technology.

43 PARTICLE ACCELERATORS↗

High efficiency small molecule tandem photovoltaic devices

A high efficiency small molecule tandem solar cell is disclosed. The tandem cell may include a first subcell comprising a first photoactive region and a second subcell comprising a second photoactive region. The first and second photoactive regions are designed to minimize spectral overlap and maximize photocurrent. The device may further include an interconnecting layer, disposed between the first subcell and the second subcell, that is at least substantially transparent.

Forrest, Stephen R.↗

Nuclear thermal propulsion fuel element packing device

A packing device for filling fuel elements with a powder through a fill aperture in an outer shell of the fuel element, including a stationary base, a clamp assembly including a body defining a bore therein, the bore being configured to slidably receive a fuel element therein, wherein the clamp assembly is movable along a vertical axis with respect to the stationary base, a cam assembly including a cam and a drive motor configured to rotate the cam, wherein rotation of the cam alternatingly raises the clamp assembly up along the vertical axis and subsequently drops the clamping assembly, and a powder reservoir assembly including a powder reservoir and a fill needle in fluid communication with the powder reservoir.

Lake, Russell L.↗

Method and device for a high temperature vacuum-safe solder resist utilizing laser ablation of solderable surfaces for an electronic module assembly

A process for manufacturing an electronic component having attaches includes providing a first component having a first attach, forming trenches on a portion of the first attach with a laser to form a solder stop, and providing a second component comprising a second attach. The process further includes providing solder between the first attach and the second attach to form a connection between the first component and the second component, where the trenches contain the solder to a usable area. A device produced by the process is disclosed as well.

Stabach, Jennifer↗

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗

Perovskite-containing devices and methods of making the same

The present disclosure relates to a method that includes positioning a stack that includes at least one of the following layers between a first surface and a second surface: a first perovskite layer and/or a second perovskite layer; and treating the stack for a period of time by at least one of heating the stack or pressurizing the stack, where a device that includes the first surface and the second surface provides the heating and the pressurizing of the stack.

van Hest, Marinus Franciscus Antonius Maria↗

Window-integrated photovoltaic devices

The present disclosure relates to a device that includes a perovskite layer, a first charge-transport layer, and an adhesion layer, where the adhesion layer is positioned between the charge transport layer and the perovskite layer, the adhesion layer forms a first bond with the charge transport layer, and the adhesion layer forms a second bond with the perovskite layer.

Wheeler, Lance Michael↗

Superlattice structure including two-dimensional material and device including the superlattice structure

Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.

Lee, Minhyun↗

Steep slope transistors with threshold switching devices

A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

Huang, Xuanqi↗

Hybrid prioritized resource allocation in thermally-or power-constrained computing devices

Various embodiments comprise prioritizing frequency allocations in thermally- or power-constrained computing devices. Computer elements may be assigned ‘weights’ based on their priorities. The computer elements with higher weights may receive higher frequency allocations to assure they receive priority in processing more quickly. The computer elements with lower weights may receive lower frequency allocations and suffer a slowdown in their processing. Elements with the same weight may be grouped together for the purpose of frequency allocation.

Al-Rawi, Asma↗

Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices

There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.

Forrest, Stephen R.↗