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At least 1,081 records · Page 60

Metallic Junction Thermoelectric Device Simulations

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

Duzik, Adam J.↗

Single Event Effect Testing of the Analog Devices ADV212

The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.

single event latch-ups (SEL)↗

Compliant Interfacial Layers in Thermoelectric Devices

A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Firdosy, Samad A.↗

Microfluidic Device

Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

Tai, Yu-Chong↗

Water Capture Device Signal Integration Board

I am a junior in electrical engineering at Arizona State University, and this is my second internship at Johnson Space Center. I am an intern in the Command and Data Handling Branch of Avionics Division (EV2), my previous internship was also in EV2. During my previous internship I was assigned to the Water Capture Device payload, where I designed a prototype circuit board for the electronics system of the payload. For this internship, I have come back to the Water Capture Device project to further the work on the electronics design I completed previously. The Water Capture Device is an experimental payload to test the functionality of two different phase separators aboard the International Space Station (ISS). A phase separator sits downstream of a condensing heat exchanger (CHX) and separates the water from the air particles for environmental control on the ISS. With changing CHX technology, new phase separators are required. The goal of the project is to develop a test bed for the two phase separators to determine the best solution.

Chamberlin, Kathryn J.↗

Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.

SiC MOSFET↗

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗

Total Ionizing Dose Test of Analog Devices’ AD654 Voltage to Frequency Converter

Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

B. Freeman↗

Calibrating a 3-Axis Accelerometer Instrument with a Less Accurate Calibration Device Part 1: Mathematical Methodology

A three-axis accelerometer instrument (3xAI) can provide the angular attitude of a 3D object using the gravity vector (g) as the sole reference. Calibrating such an instrument requires placing it at known (to some accuracy plus uncertainty) angular articulations with respect to g. This paper will show a potential process for calibrating a 3xAI by using a 2-axis rotary system (calibration device) to provide these articulations. Any calibration device (CD) with such capacity will contain internal misalignments. These misalignments, even if made relatively small or approximated to zero in the kinematics model (KM), can be detrimental to the calibration of the instrument when high measurement accuracy is required. This is especially true if the selected set of articulations chosen for calibration do not include their symmetrical counterpoints (a point where the misalignment has equal magnitude but is opposite in direction to a point chosen). The consequence of not including the combination, point and counterpoint, for any misalignment involved in the calibration, results in a biased instrument. This paper will demonstrate a calibration of the instrument using symbolic math resulting in a closed-form solution of the instrument coefficients. The main objective is to show the impact of all the CD misalignments to the instrument coefficients. This process is the basis for a more sophisticated method (shown in a future paper) for obtaining the instrument coefficients while simultaneously obtaining an estimate of the calibration device internal misalignments.

Angle↗

Nonlinear Microwave Interactions with Voltage-Gated Graphene Devices

In this dissertation, methods of fabrication and testing micro- and nano-scaled thermoelectric microwave power detectors based on graphene are explored. Initial detectors show sensitivities of 0.87 mV/mW and each chapter herein describes the iterations and improvements made to the devices. In the end, detectors have shown sensitivities of up to 60.25 mV/mW when accounting for the reflection coefficient of the device, over a 690% increase in sensitivity. Commercially-available detectors that feature zero DC power consumption and operate over similar frequency ranges typically over a power detection sensitivity of 500 mV/mW. However, state-of-the-art thermoelectric detectors based on CMOS and MEMS technologies over power detection sensitivities that are typically lower than 0.4 mV/mW. Unoptimized graphene based detectors have been shown to outperform CMOS and MEMS detectors. An outlook is provided on further optimizations that can be made to the devices.

Michael Robert Gasper↗

Radiation effects assessment of MRAM devices

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

McClure, Steve↗

Space qualification of photonic devices

Key optimal elements for space qualification plans of photonic devices are overviewed. Device parameters and qualifying procedures were discussed to assure the reliability of newly developed photonic devices needed for potential usage in space environments.

space↗

A Trade Study and Metric for Penetration and Sampling Devices for Possible Use on the NASA 2003 and 2005 Mars Sample Return Missions

This paper reviews the work completed on the compilation of a database containing viable penetrating and sampling devices, the performance system level trade study comparing selected devices to a set of prescribed parameters and the employment of a metric for the evaluation and ranking of the traded penetration and sampling devices, with respect to possible useage on the 03 and 05 sample return missions.

Mars↗

Wide Bandgap Semiconductor Devices and Systems for Communications in Extreme Environment

The feasibility of gallium nitride based wide bandgap semiconductor devices for signal amplification in extreme planetary environment is investigated. The measured performance of these devices at S-band, X-band, and Ka-band are presented. The data indicates excellent performance at the above frequencies. Potential application of these devices includes communication systems required to operate in the extreme hot environment of Venus and in the extreme cold and high radiation environment of Jupiter’s icy moons.

Gallium Nitride↗

Next Generation Exercise Device (NGED): Advancing Exercise Capabilities for Future Space Missions Through Biomechanical Modeling

BACKGROUND As space exploration extends to long-duration missions on the Moon and Mars, maintaining astronaut health and fitness becomes increasingly critical. The Next Generation Exercise Device (NGED), developed and tested by the HumanWorks Lab in NASA Johnson Space Center's (JSC) Software, Robotics, and Simulation Division, aims to address this challenge through innovative approaches. This study presents the development and evaluation of an NGED system, focusing on its adaptability to various mission scenarios, including prospective use in a Lunar Pressurized Rover (LPR). Central to this project is the application of biomechanical modeling to optimize exercise efficacy and safety in microgravity and partial gravity environments. The project is a collaborative effort with the Human Health and Performance group at Johnson Space Center, ensuring a comprehensive approach to astronaut well-being that integrates biomechanical principles with practical exercise solutions. The NGED represents the next generation of exercise capabilities for missions in space, on the Moon and Mars, with a specific focus on applications such as the LPR. METHODS AND RESULTS Data collection for NGED development was conducted with two motor-driven Beyond Power Voltra I [1] systems and a custom test structure to allow placement of the cable-based devices on the ground, at shoulder height, and overhead. The collection was performed in JSC’s Prototype Immersive Technology (PIT) Lab, utilizing an OptiTrack motion capture system and AMTI force platform, to enable detailed biomechanical analysis via OpenSim [2,3]. Motion capture data were collected for three subjects representing different body types and statures. The marker set used was an enhanced version of the full-body Plug-in Gait marker set [4], with additional markers strategically placed for the primary objective of informing exercise volume requirements. Subjects performed a series of 17 exercises, carefully selected to engage various muscle groups, including novel spaceflight exercises such as skiing (ergometer style), lateral pulldowns, wood chops, triceps extensions, and flies, with load variations ranging from 10 to 90 pounds to maintain kinematic form. This comprehensive approach allowed for a thorough evaluation of the NGED's performance across a wide range of motions and loads. The biomechanical modeling and analysis were conducted using a modified OpenSim Full Body Rajagopal Model [4,5] and also scaled to the maximum and minimum anthropometry provided in NASA-STD-3001 [6]. Volumetric convex hulls were generated based on model marker trajectories and aggregated into geometric assemblies. These can be placed in models of vehicle designs to assess fit to protect for exercise as well as to adapt NGED exercise to fit available space. Preliminary findings from the collection indicate that the NGED prototype demonstrates significant adaptability across varying user anthropometrics and exercise types. The device showed consistent performance in load-bearing exercises, with subjects able to perform exercises effectively while maintaining proper biomechanical form. CONCLUSION NGED represents a forward-looking advancement in exercise capabilities for future space missions. In the future, this system can be used to capture valuable metrics (e.g., isometric mid-thigh pull for force output measurements, assessments of postural muscle strength, overall isometric strength). Its versatility in accommodating various exercises and user physiques, coupled with the ability to provide targeted biomechanical loading, makes it a promising approach for maintaining astronaut health during long-duration missions to the Moon and Mars. Future work will focus on refining the NGED based on initial biomechanical findings, leveraging the detailed insights provided by motion capture and analysis techniques. Particular emphasis will be placed on optimizing its use within the confined spaces of a LPR and other space habitats. This work contributes significantly to NASA's goals of supporting human health and performance in deep space exploration, paving the way for sustainable long-term presence beyond Low Earth Orbit through advanced, biomechanically-informed exercise solutions.

C Wang↗

Devices and methods for removing dissolved ions from water using composite resin electrodes

The present invention provides for a device useful or removing dissolved ions from water comprising or configured to comprise composite resin electrodes. The present invention provides for a device useful for removing dissolved ions from water comprising or configured to comprise composite resin electrodes. The present invention also provides for a method for removing dissolved ions from water comprising providing said device, and using it thereof.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗