Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “CONTROL DEVICE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

A single-cell scraper based on an atomic force microscope for detaching a living cell from a substrate

We describe an atomic force microscope (AFM) manipulator that can detach a single, living adhesion cell from its substrate without compromising the cell's viability. The micrometer-scale cell scraper designed for this purpose was fabricated from an AFM micro cantilever using focused ion beam milling. The homemade AFM equipped with the scraper was compact and standalone and could be mounted on a sample stage of an inverted optical microscope. It was possible to move the scraper using selectable modes of operation, either a manual mode with a haptic device or a computer-controlled mode. The viability of the scraped single cells was evaluated using a fluorescence dye of calcein-acetoxymethl ester. Single cells detached from the substrate were collected by aspiration into a micropipette capillary glass using an electro-osmotic pump. As a demonstration, single HeLa cells were selectively detached from the substrate and collected by the micropipette. It was possible to recultivate HeLa cells from the single cells collected using the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electronic reconstruction at the polar (111)-oriented oxide interface

Atomically flat (111) interfaces between insulating perovskite oxides provide a landscape for new electronic phenomena. For example, the graphene-like coordination between interfacial metallic ion layer pairs can lead to topologically protected states [Xiao et al., Nat. Commun. 2, 596 (2011) and A. Rüegg and G. A. Fiete, Phys. Rev. B 84, 201103 (2011)]. The metallic ion/metal oxide bilayers that comprise the unit cell of the perovskite (111) heterostructures require the interface to be polar, generating an intrinsic polar discontinuity [Chakhalian et al., Nat. Mater. 11, 92 (2012)]. Here, we investigate epitaxial heterostructures of (111)-oriented LaAlO 3 /SrTiO 3 (LAO/STO). We find that during heterostructure growth, the LAO overlayer eliminates the structural reconstruction of the STO (111) surface with an electronic reconstruction, which determines the properties of the resulting two-dimensional conducting gas. This is confirmed by transport measurements, direct determination of the structure and atomic charge from coherent Bragg rod analysis, and theoretical calculations of electronic and structural characteristics. Interfacial behaviors of the kind discussed here may lead to new growth control parameters useful for electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Bandgap analysis and carrier localization in cation-disordered ZnGeN 2

The bandgap of ZnGeN 2 changes with the degree of cation site disorder and is sought in light emitting diodes for emission at green to amber wavelengths. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of disorder on electronic properties in ZnGeN 2 , addressing a gap in current studies, which largely focus on dilute or fully disordered systems. The present study demonstrates changes in the density of states and localization of carriers in ZnGeN 2 calculated using bandgap-corrected density functional theory and hybrid calculations on partially disordered supercells generated using the Monte Carlo method. We use localization and density of states to discuss the ill-defined nature of a bandgap in a disordered material and identify site disorder and its impact on the structure as a mechanism controlling electronic properties and potential device performance. Decreasing the order parameter results in a large reduction of the bandgap. The reduction in bandgap is due, in part, to isolated, localized states that form above the valence band continuum associated with nitrogen coordinated by more zinc than germanium. The prevalence of defect states in all but the perfectly ordered structure creates challenges for incorporating disordered ZnGeN 2 into optical devices, but the localization associated with these defects provides insight into the mechanisms of electron/hole recombination in the material.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films

Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn6Sn6 (R = rare earth) compounds are particularly interesting because of the existence of the large intrinsic anomalous Hall effect (AHE), which originates from the gapped Dirac cones near the Fermi level. This makes RMn6Sn6 an outstanding candidate for realizing the high-temperature quantum AHE. The growth of RMn6Sn6 thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn6Sn6 have focused on bulk crystals, and the synthesis of RMn6Sn6 thin films has not been reported so far. Here, we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn6Sn6 and TbMn6Sn6 thin films. It is especially noteworthy that TbMn6Sn6 thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum AHE. Our work paves the avenue toward the control of the AHE using devices patterned from RMn6Sn6 thin films.

Materials Science↗
DOE OSTI2024

Modeling of the metal–insulator transition temperature in alio-valently doped VO 2 through symbolic regression

The correlated semiconductor vanadium dioxide (VO 2 ) exhibits an insulator–metal transition (IMT) near room temperature, which is of interest in various device applications. Precise IMT temperature control is crucial to determine the use cases across technologies such as thermochromic windows, actuators for robots or neuronal oscillators. Doping the cation or anion sites can modulate the IMT by several tens of degrees and control hysteresis. However, modeling the effects of control parameters (e.g., doping concentration, type of dopants) is challenging due to complex experimental procedures and limited data, hindering the use of traditional data-driven machine learning approaches. Symbolic regression (SR) can bridge this gap by identifying nonlinear expressions connecting key input parameters to target properties, even with small data sets. In this work, we develop SR models to capture the IMT trends in VO 2 influenced by different dopant parameters. Using experimental data from the literature, our study reveals a dual nature of the IMT temperature with varying tungsten (W) doping concentrations. The symbolic model captures data trends and accounts for experimental variability, providing a complementary approach to first-principles calculations. Our feature-driven analysis across a broader class of dopants informs selectivity and provides qualitative insights into tuning phase transition properties valuable for neuromorphic computing and thermochromic windows.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100×. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

Physics↗
DOE OSTI2020

Suppression of edge localized modes with real-time boron injection using the tungsten divertor in EAST

We report an observation of robust suppression of edge-localized modes (ELMs) in the Experimental Advanced Superconducting Tokamak (EAST), enabled by continuous boron (B) powder injection. Edge harmonic oscillations appear during B powder injection, providing sufficient particle transport to maintain constant density and avoid impurity accumulation in ELM-stable plasmas. Here, quasi-steady ELM suppression discharges are demonstrated with modest energy confinement improvement and over a wide range of conditions: heating power and technique variation, electron density range over a factor ~3.5, deuterium or helium ion species, and with either direction of the toroidal magnetic field. ELM suppression is observed above a threshold edge B intensity and ceases within 0.5 s of termination of the B injection. In contrast to ELM suppression accompanied by recycling reduction during Li powder injection in NSTX and EAST (Maingi et al 2018 Nucl. Fusion 58 024003), reduced recycling due to hydrogenic species retention is unnecessary for the ELM suppression with B powder injection, paving the way for its consideration as an ELM control tool for future fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Dependence of ion-cyclotron range of frequencies instabilities on species mix and fast-ion distribution: I. Stability

Ion cyclotron emission (ICE) driven by fast ions has the potential to be a reactor relevant diagnostic of confined and escaping fast ions; moreover, controlled experiments in magnetic fusion devices can shed light on similar magnetospheric instabilities below and above the ion cyclotron frequency f ci . Dedicated DIII-D experiments studied instabilities below f ci and at cyclotron harmonics l f ci by injecting thirteen different neutral beam populations into plasmas with different thermal compositions of H, D, and 3He at five different values of toroidal field. High-frequency magnetic loops diagnose mode properties. Each beam type is individually injected for an approximate slowing-down time (~100 ms), resulting in a database of 2529 conditions that are analyzed in frequency bands corresponding to ICE harmonics and < f ci global Alfvén eigenmodes. The sub-cyclotron modes are more unstable at low field and in plasmas with large H concentration. For D injection, first harmonic ICE at f cD is more unstable in hydrogen plasmas but, for H injection, the converse is true (ICE at f cH is more unstable in D), suggesting that thermal same-species ions damp fundamental ICE. ICE stability also depends upon the pitch-angle anisotropy gradient and upon the ‘bump-on-tail’ gradient ∂f/∂v. Although the frequency of unstable ICE in these plasmas always occurs near the central cyclotron frequency, the precise value also depends on the Alfvén speed and beam direction, consistent with the idea that instability occurs for modes that simultaneously satisfy ω ≃ 2πlf ci , the magnetosonic dispersion relation, and the Doppler-shifted resonance condition.

electromagnetic ion cyclotron instabilities↗
DOE OSTI2026

Real-time avoidance of the L-mode and H-mode density limit via machine-learned stability metrics

Reliable operation of burning plasma tokamaks will require robust control strategies to avoid macroscopic instability limits such as the L-mode and H-mode density limits (LDL, HDL). In this work, we explore closed-loop avoidance of these phenomena at DIII-D using machine-learned risk metrics. Feedback control is implemented via the ‘DL Supervisor’ scheme, which regulates the chosen risk metric by reducing the density target or increasing NBI heating in real-time. Using the LDL 25 risk metric, the LDL is reproducibly suppressed. We also introduce an HDL risk metric in this study, HDL 25 , which reduces the False Positive Rate by 2x compared to the Greenwald fraction. Applying this scaling to a plasma current ramp-down, we successfully avoid an HDL-driven H/L back-transition. These experiments constitute the first demonstration of real-time DL avoidance using machine-learned risk metrics. These instability metrics outline a path to safer high-density operation, more reliable ramp-down scenarios, and improved off-normal control for next-step devices such as ITER and SPARC.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Voltage-Controlled Sensitivity of the Spin Seebeck Effect in Pt/Y 3 Fe 5 O 12 /MgO/(PbMg 1/3 Nb 2/3 O 3 ) 0.7 (PbTiO 3 ) 0.3 Multiferroic Heterostructures

The characteristics of pure spin current from the longitudinal spin Seebeck effect are investigated at room temperature in Pt / Y 3 Fe 5 O 12 deposited on the ( Pb Mg 1 / 3 Nb 2 / 3 O 3 ) 0.7 ( Pb Ti O 3 ) 0.3 substrate, through which electrostrain can be controllably applied. The applied voltage enables the modification of magnetic anisotropy in the magnetic insulating Y 3 Fe 5 O 12 layer, and thus the sensitivity of the spin Seebeck effect at small magnetic fields, without suppressing the spin Seebeck effect and the inverse spin Hall effect. This is due to the robust intrinsic physical parameters in Pt / Y 3 Fe 5 O 12 . In conclusion, our results pave the way for the application of voltage-controlled pure spin-current devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Giant Doping Response of Magnetic Anisotropy in MnTe

Developing simple ways to control spin states in spintronic devices is a crucial step towards increasing their functionality. MnTe is a room-temperature antiferromagnet with promising spintronic properties, including for thermospintronics and magnon-based devices. Here, we show that, in MnTe, less than 1% Li is sufficient to produce a dramatic spin reorientation as observed by neutron diffraction. The behavior of the 0001 magnetic Bragg peak reveals a significant reorientation of the Mn spins from planar in the pure material to almost completely axial with minimal Li doping. Temperature dependence of the magnetic peaks in Li-doped samples indicates that axial spins shift back to planar suddenly upon approaching the Néel temperature (T N = 307 K). Density functional theory calculations support the idea that a shift in the Fermi level caused by doping is responsible for switching the material between two competing magnetic ground states. These results pave the way for developing easy switching of magnetic states in functional materials such as spintronic devices and topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Modular Quantum Processor with an All-to-All Reconfigurable Router

Superconducting qubits provide a promising approach to large-scale fault-tolerant quantum computing. However, qubit connectivity on a planar surface is typically restricted to only a few neighboring qubits. Achieving longer-range and more flexible connectivity, which is particularly appealing in light of recent developments in error-correcting codes, however, usually involves complex multilayer packaging and external cabling, which is resource intensive and can impose fidelity limitations. Here, we propose and realize a high-speed on-chip quantum processor that supports reconfigurable all-to-all coupling with a large on-off ratio. We implement the design in a four-node quantum processor, built with a modular design comprising a wiring substrate coupled to two separate qubit-bearing substrates, each including two single-qubit nodes. We use this device to demonstrate reconfigurable controlled-𝑍 gates across all qubit pairs, with a benchmarked average fidelity of 96.00% ± 0.08% and best fidelity of 97.14% ± 0.07%, limited mainly by dephasing in the qubits. We also generate multiqubit entanglement, distributed across the separate modules, demonstrating GHZ-3 and GHZ-4 states with fidelities of 88.15% ± 0.24% and 75.18% ± 0.11%, respectively. This approach promises efficient scaling to larger-scale quantum circuits and offers a pathway for implementing quantum algorithms and error-correction schemes that benefit from enhanced qubit connectivity.

Quantum circuits↗
DOE OSTI2025

The Effects of Compounded Model Size Reductions on Adversarial Robustness

Recent advances in Edge AI and Tiny Machine Learning (TinyML) have enabled the deployment of machine learning models on resource-constrained environments. However, deploying these models on edge devices, such as micro-controllers, requires significant model footprint reduction through a variety of techniques such as quantization, pruning, and clustering. While these optimization methods offer considerable advantages, they potentially introduce AI-related security vulnerabilities, particularly concerning model robustness with respect to adversarial AI attacks. Prior research has extensively examined the impact of quantization on adversarial robustness; however, the effects of alternative reduction techniques and their combinations remain understudied. This paper investigates the impact of model size reduction techniques on adversarial robustness, when applied individually and combined. We utilized Fast Gradient Sign Method (FGSM) and Projected Gradient Descent (PGD) attacks to generate adversarial perturbations for both training and testing data, and then evaluated the models' accuracy under adversarial training conditions. Our findings revealed that reduction techniques generally diminished robustness; although, combining techniques was not found to make robustness any worse than when applied individually. Moreover, specific techniques can potentially enhance resistance to small size perturbations. This research provides insights into the trade-offs between model size reduction and security, establishing a foundation for future investigations into improving adversarial training techniques and methodologies for maintaining robustness while preserving memory footprint benefits.

Austria, Phillipe [ORNL] (ORCID:0000000236223973)↗
DOE OSTI2016

Methods for Dynamic Analysis of Distribution Feeders with High Penetration of PV Generators

An increase in the number of inverter-interfaced photovoltaic (PV) generators on existing distribution feeders affects the design, operation, and control of the distribution systems. Existing distribution system analysis tools are capable of supporting only snapshot and quasi-static analyses. Capturing the dynamic effects of PV generators during the variation in distribution system states is necessary when studying the effects of controller bandwidths, multiple voltage correction devices, and anti-islanding. This work explores the use of dynamic phasors and differential algebraic equations (DAE) for impact analysis of PV generators on the existing distribution feeders.

14 SOLAR ENERGY↗
DOE OSTI2023

Improving Performance of III-V Solar Cells Grown on Spalled Germanium with Ex Situ Substrate Planarization

Controlled spalling allows removal of devices and provides an opportunity for cost reduction through substrate reuse. However, the fracture-based process can leave behind morphological surface features, notably river lines, that can disrupt epitaxial growth and degrade device performance. We investigate the viability of various wet etch chemistries to planarize river lines to ensure high-quality device growth and performance without mechanical repolishing, and so maintain a route towards cost-effective reuse. Etching in a HF: HNO 3 :CH 3 COOH solution effectively planarizes river lines and produces a surface that yields devices with equivalent performance to those grown on epi-ready Ge wafer surfaces. Further studies will focus on optimizing etch composition, temperature, and time to minimize material removal while maintaining a suitable surface for high-quality epitaxy.

germanium↗
DOE OSTI2022

Towards Optimal and Executable Distribution Grid Restoration Planning With a Fine-Grained Power-Communication Interdependency Model

Distribution service restoration (DSR) under natural disasters is always a critical and challenging problem for utility companies. An effective solution must not ignore the power-communication interdependency as various systems are getting increasingly connected in the Smart Grid era. In this paper, we propose a two-layer distribution system model with both power and communication components. Based on this model, we formulate the restoration process as a routing problem that schedules the path and action sequence of utility crews that involves repairing damaged components, closing power switches, and enabling communication paths between the control center and remote field devices. Further, we develop a simulation-based method to quantitatively evaluate the restoration process with public reference models of large-scale power systems. The experimental results show that our method improves the total restored energy up to 57.6% and reduces the recovery time up to 63% by considering the power-communication interdependency.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Design of stimulus-responsive two-state hinge proteins

In nature, proteins that switch between two conformations in response to environmental stimuli structurally transduce biochemical information in a manner analogous to how transistors control information flow in computing devices. Designing proteins with two distinct but fully structured conformations is a challenge for protein design as it requires sculpting an energy landscape with two distinct minima. Here, in this work, we describe the design of “hinge” proteins that populate one designed state in the absence of ligand and a second designed state in the presence of ligand. X-ray crystallography, electron microscopy, double electron-electron resonance spectroscopy, and binding measurements demonstrate that despite the significant structural differences the two states are designed with atomic level accuracy and that the conformational and binding equilibria are closely coupled.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2018

Material platforms for optical metasurfaces

Optical metasurfaces are judicously engineered electromagnetic interfaces that can control and manipulate many of light’s quintessential properties, such as amplitude, phase, and polarization. These artificial surfaces are composed of subwavelength arrays of optical antennas that experience resonant light-matter interaction with incoming electromagnetic radiation. Their ability to arbitrarily engineer optical interactions has generated considerable excitement and interest in recent years and is a promising methodology for miniaturizing optical components for applications in optical communication systems, imaging, sensing, and optical manipulation. However, development of optical metasurfaces requires progress and solutions to inherent challenges, namely large losses often associated with the resonant structures; large-scale, complementary metal-oxide-semiconductor-compatible nanofabrication techniques; and incorporation of active control elements. Furthermore, practical metasurface devices require robust operation in high-temperature environments, caustic chemicals, and intense electromagnetic fields. Although these challenges are substantial, optical metasurfaces remain in their infancy, and novel material platforms that offer resilient, low-loss, and tunable metasurface designs are driving new and promising routes for overcoming these hurdles. In this review, we discuss the different material platforms in the literature for various applications of metasurfaces, including refractory plasmonic materials, epitaxial noble metal, silicon, graphene, phase change materials, and metal oxides. We identify the key advantages of each material platform and review the breakthrough devices that were made possible with each material. Finally, we provide an outlook for emerging metasurface devices and the new material platforms that are enabling such devices.

36 MATERIALS SCIENCE↗