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At least 109 records · Page 6

Observation of a massive phason in a charge-density-wave insulator

The lowest-lying fundamental excitation of an incommensurate charge density wave (CDW) material is widely believed to be a massless phason -- a collective modulation of the phase of the CDW order parameter. However, as first pointed out by Lee and Fukuyama, long-range Coulomb interactions should push the phason energy up to the plasma energy of the CDW condensate, resulting in a massive phason and a fully gapped spectrum. Whether such behavior occurs in a CDW system has been unresolved for more than four decades. Using time-domain THz emission spectroscopy, we investigate this issue in the material (TaSe 4 ) 2 I, a classical example of a quasi-one-dimensional CDW insulator. Upon transient photoexcitation at low temperatures, we find the material strikingly emits coherent, narrow-band THz radiation. The frequency, polarization and temperature-dependence of the emitted radiation imply the existence of a phason that acquires mass by coupling to long-range Coulomb interaction. Our observations constitute the first direct evidence of the massive "Lee-Fukuyama" phason and highlight the potential applicability of fundamental collective modes of correlated materials as compact and robust sources of THz radiation.

36 MATERIALS SCIENCE↗

Results From Cs Activated GaN Photocathode Development for MCP Detector Systems at GSFC

We describe the development of high quantum efficiency W photocathodes for use in large area two dimensional microchannel plate based detector arrays to enable new W space astronomy missions. Future W missions will require improvements in detector sensitivity, which has the most leverage for cost-effective improvements in overall telescope/instrument sensitivity. We use new materials such as p-doped GaN, AIGaN, ZnMgO, Sic and diamond. We have currently obtained QE values > 40 % at 185 nm with Cesiated GaN, and hope to demonstrate higher values in the future. By using controlled internal fields and nano-structuring of the surfaces, we plan to provide field emission assistance for photoelectrons while maintaining their energy distinction from dark noise electrons. We will transfer these methods from GaN to ZnMgO, a new family of wide band-gap materials more compatible with microchannel plates. We also are exploring technical parameters such as doping profiles, internal and external field strengths, angle of incidence, field emission assistance, surface preparation, etc.

Norton, Tim↗

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Negley, Gerald H.↗

Development and Progress in Enabling the Photocatalyst Ti02 Visible-Light-Active

Photocatalytic oxidation (PCO) of organic contaminants is a promising air and water quality management approach which offers energy and cost savings compared to thermal catalytic oxidation (TCO). The most widely used photocatalyst, anatase TiO2, has a wide band gap (3.2 eV) and is activated by UV photons. Since solar radiation consists of less than 4% UV, but contains 45% visible light, catalysts capable of utilizing these visible photons need to be developed to make peo approaches more efficient, economical, and safe. Researchers have attempted various approaches to enable TiO2 to be visible-light-active with varied degrees of success'. Strategies attempted thus far fall into three categories based on their electrochemical' mechanisms: 1) narrowing the band gap of TiO2 by implantation of transition metal elements or nonmetal elements such as N, S, and C, 2) modifying electron-transfer processes during PCO by adsorbing sensitizing dyes, and 3) employing light-induced interfacial electron transfer in the heteronanojunction systems consisting of narrow band gap semiconductors represented by metal sulfides and TiO2. There are diverse technical approaches to implement each of these strategies. This paper presents a review of these approaches and results of the photocatalytic activity and photonic efficiency of the end .products under visible light. Although resulting visible-light-active (VLA) photocatalysts show promise, there is often no comparison with unmodified TiO2 under UV. In a limited number of studies where such comparison was provided, the UV-induced catalytic activity of bare TiO2 is much greater than the visible-light-induced catalytic activity of the VLA catalyst. Furthermore, VLA-catalysts have much lower quantum efficiency compared to the approx.50% quantum efficiency of UV-catalysts. This stresses the need for continuing research in this area.

Levine, Lanfang H.↗

Stability of fractional Chern insulators with a non-Landau level continuum limit

The stability of fractional Chern insulators is widely believed to be predicted by the resemblance of their single-particle spectra to Landau levels. Here we investigate the scope of this geometric stability hypothesis by analyzing the stability of a set of fractional Chern insulators that explicitly do not have a Landau level continuum limit. By computing the many-body spectra of Laughlin states in a generalized Hofstadter model, we analyze the relationship between single-particle metrics, such as trace inequality saturation, and many-body metrics, such as the magnitude of the many-body and entanglement gaps. We show numerically that the geometric stability hypothesis holds for Chern bands that are not continuously connected to Landau levels, as well as conventional Chern bands, albeit often requiring larger system sizes to converge for these configurations.

2-dimensional systems↗

Valley-Tunable Even-Denominator Fractional Quantum Hall State in the Lowest Landau Level of an Anisotropic System

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors (v) are of prime interest as they are predicted to host exotic, topological states of matter. Here, we report here the observation of a FQHS at v = 1/2 in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multivalley degree of freedom offer an unprecedented tunability of the v = 1/2 FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the v = 1/2 FQHS depend strongly on valley occupancy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anomalous Auger Recombination in PbSe

Using first-principles approaches we find that the Auger recombination in PbSe is anomalous in three distinct ways. First, the direct Auger coefficient is 4 orders of magnitude lower than that of other semiconductors with similar band gaps, a result that can be attributed to the lack of involvement of a heavy-hole band. Second, phonon-assisted indirect Auger recombination prevails, contrary to the common belief that direct Auger is dominant in narrow-gap semiconductors. Third, an unexpectedly weak temperature dependence of the Auger coefficient is observed, which we can now attribute to the indirect nature of the Auger process. The widely accepted explanation of this behavior in terms of an unusual temperature dependence of the band gap is only a secondary effect. Furthermore, our results elucidate the mechanisms underlying the anomalous Auger recombination in IV-VI semiconductors in general, which is critical for understanding and engineering carrier transport.

36 MATERIALS SCIENCE↗

Modeling Studies of PVT Growth of ZnSe: Current Status and Future Course

Bulk growth of wide band gap II-VI semiconductors by physical vapor transport (PVT) has been developed and refined over the past several years at NASA Marshall Space Flight Center. Results from a modeling study of PVT crystal growth of ZnSe are reported in this paper. The PVT process is numerically investigated using a two-dimensional formulation of the governing equations and associated boundary conditions. Both the incompressible Boussinesq approximation and a compressible model are tested to determine the influence of gravity on the process and to discern the differences between the two approaches. The influence of a residual gas is included in the models. The results show that both the incompressible and compressible approximations provide comparable results and the presence of a residual gas tends to measurably reduce the mass flux in the system. Detailed flow, thermal and concentration profiles are provided. The simulations show that the Stefan flux dominates the system flow field and the subtle gravitational effects can be gauged by subtracting this flux from the calculated profiles. Shear flows, due to solutal buoyancy, of the order of 50 microns/s for the liorizont,-d growth orientation and 10 microns/s for the vertical orientation are predicted. Whether these flows can fully account for the observed gravity related growth morphological effects and inhomogeneous solute and dopant distributions is a matter of conjecture. A template for future modeling efforts in this area is suggested which incorporates a mathematical approach to the tracking of the growth front based on energy of formation concepts.

Ramachandran, N.↗

Moiré nematic phase in twisted double bilayer graphene

Graphene moiré superlattices display electronic flat bands. At integer fillings of these flat bands, energy gaps due to strong electron-electron interactions are generally observed. However, the presence of other correlation-driven phases in twisted graphitic systems at non-integer fillings is unclear. Here, we report the existence of threefold rotational symmetry breaking in twisted double bilayer graphene. Using spectroscopic imaging over large and uniform areas to characterize the direction and degree of C 3 symmetry breaking, we find it to be prominent only at energies corresponding to the flat bands and nearly absent in the remote bands. We demonstrate that the magnitude of the rotational symmetry breaking does not depend on the degree of the heterostrain or the displacement field, being instead a manifestation of an interaction-driven electronic nematic phase. We show that the nematic phase is a primary order that arises from the normal metal state over a wide range of doping away from charge. Furthermore, our modelling suggests that the nematic instability is not associated with the local scale of the graphene lattice, but is an emergent phenomenon at the scale of the moiré lattice.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗

Charge carrier nonadiabatic dynamics in non-metal doped graphitic carbon nitride

Graphitic carbon nitride (GCN) has attracted significant attention due to its excellent performance in photocatalytic applications. Non-metal doping of GCN has been widely used to improve the efficiency of the material as a photocatalyst. Using a combination of time-domain density functional theory with nonadiabatic molecular dynamics, we study the charge carrier dynamics in oxygen and boron doped GCN systems. The reported simulations provide a detailed time-domain mechanistic description of the charge separation and recombination processes that are of fundamental importance while evaluating the photovoltaic and photocatalytic performance of the material. The appearance of smaller energy gaps due to the presence of dopant states improves the visible light absorption range of the doped systems. At the same time, the nonradiative lifetimes are shortened in the doped systems as compared to the pristine GCN. In the case of boron doped at a carbon (B–C–GCN), the charge recombination time is very long as compared to the other two doped systems owing to the smaller electron–phonon coupling strength between the valence band maximum and the trap state. The results suggest B–C–GCN as the most suitable candidate among three doped systems studied in this work for applications in photocatalysis. Finally, this work sheds light into the influence of dopants on quantum dynamics processes that govern GCN performance and, thus, guides toward building high-performance devices in photocatalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

42 ENGINEERING↗

Morphological Modulation of TiO 2 Nanotube via Optimal Anodization Condition for Solar Water Oxidation

With the depletion of fossil fuels and the rising global demand for energy, photoelectrochemical (PEC) water splitting presents a promising solution to avert an energy crisis. Titanium dioxide (TiO 2 ), an n -type semiconductor, has gained popularity as a photoanode due to its remarkable PEC properties. Nevertheless, inherent challenges such as a wide band gap (~3.2 eV), charge recombination, and slow oxygen evolution reaction (OER) rates at the surface limit its practical application by constraining light absorption. To overcome these limitations, we have developed TiO 2 nanotubes (NTs) using a facile anodization method. This study examines the impact of anodization growth parameters on solar water oxidation performance. Specifically, TiO 2 NTs with modified anodization time (referred to as TiO 2 -6) showed a 3.5-fold increase in photocurrent density compared to the as-grown TiO 2 NTs. Furthermore, electrochemical analyses, such as electrochemical impedance spectroscopy (EIS), indicated a significant decrease in charge transfer resistance following the adjustment of on-off anodization time. Additionally, the TiO 2 -6 photoanode demonstrated a higher electrochemically active surface area (ECSA) than other samples. Therefore, optimal nanostructuring parameters are crucial for enhancing the PEC properties of TiO 2 NTs. Overall, our findings offer valuable insights for fabricating high-quality TiO 2 NTs photoanodes, contributing to developing efficient PEC systems for sustainable energy production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low Exciton Binding Energies and Localized Exciton–Polaron States in 2D Tin Halide Perovskites

We report aside from band gap reduction, little is understood about the effect of the tin-for-lead substitution on the fundamental optical and optoelectronic properties of metal halide perovskites (MHPs), especially when transitioning from 3D to lower dimensional structures. Herein, we take advantage of the spectro-scopic isolation of excitons in 2D MHPs to study the intrinsic differences between lead and tin MHPs. The exciton’s spectral fine structure indicates a larger polaron binding energy in tin MHPs. Additionally, the electroabsorption responses of the 2D MHPs demonstrates that tin MHPs have exciton binding energies 1.5–2× lower than that of their lead counterparts. Despite the lower binding energy, the excitons in tin MHPs are more Frenkel-like with small radii, small polarizabilities, and large dipole moments. These results are interpreted as consequences of small polaron formation and disorder-induced dipole moments. This work highlights the wide range of intrinsic differences between lead and tin MHPs as well as the complexity of excited states in these systems.

36 MATERIALS SCIENCE↗

Assessment of the Short-Term Radiometric Stability between Terra MODIS and Landsat 7 ETM+ Sensors

The Landsat 7 (L7) Enhanced Thematic Mapper (ETM+) sensor was launched on April 15th, 1999 and has been in operation for over nine years. It has six reflective solar spectral bands located in the visible and shortwave infrared part of the electromagnetic spectrum (0.5 - 2.5 micron) at a spatial resolution of 30 m. The on-board calibrators are used to monitor the on-orbit sensor system changes. The ETM+ performs solar calibrations using on-board Full Aperture Solar Calibrator (FASC) and the Partial Aperture Solar Calibrator (PASC). The Internal Calibrator Lamp (IC) lamps, a blackbody and shutter optics constitute the on-orbit calibration mechanism for ETM+. On 31 May 2003, a malfunction of the scan-line corrector (SLC) mirror assembly resulted in the loss of approximately 22% of the normal scene area. The missing data affects most of the image with scan gaps varying in width from one pixel or less near the centre of the image to 14 pixels along the east and west edges of the image, creating a wedge-shaped pattern. However, the SLC failure has no impacts on the radiometric performance of the valid pixels. On December 18, 1999, the Moderate Resolution Imaging Spectroradiometer (MODIS) Proto-Flight Model (PFM) was launched on-board the NASA's EOS Terra spacecraft. Terra MODIS has 36 spectral bands with wavelengths ranging from 0.41 to 14.5 micron and collects data over a wide field of view angle (+/-55 deg) at three nadir spatial resolutions of 250 m, 500 in 1 km for bands 1 to 2, 3 to 7, and 8 to 36, respectively. It has 20 reflective solar bands (RSB) with spectral wavelengths from 0.41 to 2.1 micron. The RSB radiometric calibration is performed by using on-board solar diffuser (SD), solar diffuser stability monitor (SDSM), space-view (SV), and spectro-radiometric calibration assembly (SRCA). Through the SV port, periodic lunar observations are used to track radiometric response changes at different angles of incidence (AOI) of the scan mirror. As a part of the AM Constellation satellites, Terra MODIS flies approximately 30 minutes behind L7 ETM+ in the same orbit. The orbit of L7 is repetitive, circular, sunsynchronous, and near polar at a nominal altitude of 705 km (438 miles) at the Equator. The spacecraft crosses the Equator from north to south on a descending node between 10:00 AM and 10:15 AM. Circling the Earth at 7.5 km/sec, each orbit takes nearly 99 minutes. The spacecraft completes just over 14 orbits per day, covering the entire Earth between 81 degrees north and south latitude every 16 days. The longest continuous imaging swath that L7 sensor can collect is for a 14-minute subinterval contact period which is equivalent to 35 full WRS-2 scenes. On the other hand, Terra can provide the entire corresponding orbit with wider swath at any given ETM+ collection without contact time limitation. There are six spectral matching band pairs between MODIS (bands 3, 4, 1, 2, 6, 7) and ETM+ (bands 1, 2, 3, 4, 5, 7) sensor. MODIS has narrower spectral responses than ETM+ in all the bands. A short-term radiometric stability was evaluated using continuous ETM+ scenes within the contact period and the corresponding half orbit MODIS scenes. The near simultaneous earth observations (SNO) were limited by the smaller swath size of ETM+ (187 km) as compared to MODIS (2330 km). Two sets of continuous granules for MODIS and ETM+ were selected and mosaiced based on pixel geolocation information for non cloudy pixels over the North American continent. The Top-of- Atmosphere (TOA) reflectances were computed for the spectrally matching bands between ETM+ and MODIS over the regions of interest (ROI). The matching pixel pairs were aggregated from a finer to a coarser pixel resolution and the TOA reflectance values covering a wide dynamic range of the sensors were compared and analyzed. Considering the uncertainties of the absolute calibration of the both sensors, radiometric stability was verified for the band pairs. The Railroad Valley Playa, Nada (RVPN) was included in the path of this continuous orbit, which served as a verification point between the shortterm and the long-term trending results from previous studies. This work focuses on monitoring the short-term on-orbit stability of MODIS and the ETM+ RSB. It also provides an assessment of the absolute calibration differences between the two sensors over their wide dynamic ranges.

Choi, Taeyoung↗

Ferroelectric 2D antimony oxides with wide bandgaps

The first two-dimensional (2D) polymorphs of antimony dioxide, namely, γ-Sb 2 O 4 and δ-Sb 2 O 4 , are predicted using the evolutionary algorithm combined with first-principles density functional theory (DFT) calculations. Out-of-plane ferroelectricity is found in γ-Sb 2 O 4 , while in-plane ferroelectricity is found in δ-Sb 2 O 4 . The predicted dipole moments of γ-Sb 2 O 4 and δ-Sb 2 O 4 phases are 36.63 and 14.96 eÅ, respectively, implying that they can be good candidates for making ferroelectric devices. Further, the calculations show that doping with other group V elements or applying strain can lower the switching energy barriers and thus facilitate switching. Results from GW calculations show indirect band gaps of 5.51 and 3.39 eV for γ-Sb 2 O 4 and δ-Sb 2 O 4 in their monolayers, respectively. Raman spectra are calculated to facilitate the experimental investigation of the predicted structures. The existence of both in-plane and out-of-plane 2D ferroelectricity and the large band gaps make this material system particularly interesting for potential applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of single atom Platinum (Pt) doping and facet dependent on the electronic structure and light absorption of Lanthanum Titanium Oxide (La 2 Ti 2 O 7 ): A Density Functional Theory study

Charge generation and separation are two key processes for semiconductor photocatalysis. Here, we use Pt as a single atom catalyst to systematically examine the facet-dependent electronic band structure and light absorption of the layered perovskite-type wide-gap semiconductor, lanthanum titanium oxide (La 2 Ti 2 O 7 , LTO) by means of density functional theory simulations. In this study, it is found that single Pt atom doping of different LTO surfaces (here, (100), (101) and (001)) can not only create states in the bandgap that would promote the formation of recombination centers, but also shift the optical absorption edge to the visible region. Interestingly, the Pt doping forms a heterojunction, with the valence band maximum consisting of Pt states and the conduction band minimum consisting of LTO states, respectively. To study the facet dependent surface activity, acetic acid (CH 3 COOH) was used as a model molecule to investigate the adsorption and charge transfer on the (101), (100) and (001) Pt-LTO surface facets. The results show that the (101) facet could enable stronger adsorption of CH 3 COOH by promoting more electron transfer during the interfacial interaction. Our theoretical findings aim to promote the design and optimization of the single atom catalysts (SACs) for photocatalytic applications and other broad catalysis systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Incident beam optics optimization for the single crystal neutron diffractometer Pioneer with a polarized beam option

Pioneer, a next-generation single-crystal neutron diffractometer, is under development for Oak Ridge National Laboratory’s Second Target Station. Designed to address a wide range of scientific questions, Pioneer will deliver homogeneous neutron beams with customizable size and divergence and provide a polarized beam option. This article introduces its incident beam optics, highlighting the optimization methodology and the simulated performance. Pioneer will utilize a modified elliptical-straight guide for neutron transport and deploy slit packages and insertable apertures to control beam size and divergence. The optimized guide geometry matches the optimal-and-full-sample-illumination condition, and the beam control system effectively filters out unwanted neutrons while preserving the desired ones. In addition, we have found that polygon-approximated guides provide satisfactory transport efficiency and beam homogeneity, eliminating the need for truly curved guides. Further, to enhance neutronics performance and reduce cost, the coatings of supermirror elements are individually optimized to the lowest half-integer m-values that are sufficient to deliver the desired neutrons. After evaluating polarizing V-cavities and 3 He spin filters over the default polarized wavelength band of 1.2–5.5 Å, we selected a translatable multichannel polarizing V-cavity as the incident beam polarizer. Strategically placed at a location where the beam divergence is low and a large in-guide gap has negligible impact on transport efficiency, the optimized V-cavity achieves an average P 2 T of ~35%.

47 OTHER INSTRUMENTATION↗