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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Identifying the secondary electron cutoff in ultraviolet photoemission spectra for work function measurements of non-ideal surfaces

Abstract Absolute values of work functions can be determined in ultraviolet photoemission spectroscopy (UPS) by measuring the minimum kinetic energy of secondary electrons generated by a known photon energy. However, some samples can produce spectra that are difficult to interpret due to additional intensity below the true secondary electron cutoff. Disordered absorbates on elemental metals add small intensity below the onset for the transition metal surfaces studied, which can be attributed to energy losses after photoelectrons are generated. In contrast, spectra from WO 3−x films can produce multiple onsets with comparable intensity which do not fit this model. False onsets (in the context of work function measurements) can be minimized by optimizing experimental detection parameters including limiting analyzer acceptance angles and pass energy. True work functions can be identified by examining the onsets as the sample bias is varied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ultraviolet spectroscopy of pressurized and supercritical carbon dioxide

Abstract Carbon dioxide (CO 2 ) is prevalent in planetary atmospheres and sees use in a variety of industrial applications. Despite its ubiquitous nature, its photochemistry remains poorly understood. In this work we explore the density dependence of pressurized and supercritical CO 2 electronic absorption spectra by vacuum ultraviolet spectroscopy over the wavelength range 1455-2000 Å. We show that the lowest absorption band transition energy is unaffected by a density increase up to and beyond the thermodynamic critical point (137 bar, 308 K). However, the diffuse vibrational structure inherent to the spectrum gradually decreases in magnitude. This effect cannot be explained solely by collisional broadening and/or dimerization. We suggest that at high densities close proximity of neighboring CO 2 molecules with a variety of orientations perturbs the multiple monomer electronic state potential energy surfaces, facilitating coupling between binding and dissociative states. We estimate a critical radius of ~4.1 Å necessary to cause such perturbations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Photon acceleration of high-intensity vector vortex beams into the extreme ultraviolet

Extreme ultraviolet (XUV) light sources allow for the probing of bound electron dynamics on attosecond scales, interrogation of high-energy-density matter, and access to novel regimes of strong-field quantum electrodynamics. Despite the importance of these applications, coherent XUV sources remain relatively rare, and those that do exist are limited in their peak intensity and spatio-polarization structure. Here, we demonstrate that photon acceleration of an optical vector vortex pulse in the moving density gradient of an electron beam–driven plasma wave can produce a high-intensity, tunable-wavelength XUV pulse with the same vector vortex structure as the original pulse. Quasi-3D, boosted-frame particlein- cell simulations show the transition of optical vector vortex pulses with 800-nm wavelengths and intensities below 10 18 W/cm 2 to XUV vector vortex pulses with 36-nm wavelengths and intensities exceeding 10 20 W/cm 2 over a distance of 1.2 cm. The XUV pulses have sub-femtosecond durations and nearly flat phase fronts. The production of such high-quality, high-intensity XUV vector vortex pulses could expand the utility of XUV light as a diagnostic and driver of novel light–matter interactions.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Failure of molecular dynamics to provide appropriate structures for quantum mechanical description of the aqueous chloride ion charge-transfer-to-solvent ultraviolet spectrum

The lowest band in the charge-transfer-to-solvent ultraviolet absorption spectrum of aqueous chloride ion is studied by experiment and computation. Interestingly, the experiments indicate that at concentrations up to at least 0.25 M, where calculations indicate ion pairing to be significant, there is no notable effect of ionic strength on the spectrum. The experimental spectra are fitted to aid comparison with computations. Classical molecular dynamic simulations are carried out on dilute aqueous Cl - , Na + , and NaCl, producing radial distribution functions in reasonable agreement with experiment and, for NaCl, clear evidence of ion pairing. Clusters are extracted from the simulations for quantum mechanical excited state calculations. Accurate ab initio coupled-cluster benchmark calculations on a small number of representative clusters are carried out and used to identify and validate an efficient protocol based on time-dependent density functional theory. The latter is used to carry out quantum mechanical calculations on thousands of clusters. The resulting computed spectrum is in excellent agreement with experiment for the peak position, with little influence from ion pairing, but is in qualitative disagreement on the width, being only about half as wide. It is concluded that simulation by classical molecular dynamics fails to provide an adequate variety of structures to explain the experimental CTTS spectrum of aqueous Cl - .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

KF·B(OH) 3 : a KBBF-type material with large birefringence and remarkable deep-ultraviolet transparency

In this work, we discuss a designed material with large birefringence and remarkable deep-ultraviolet transparency, KF·B(OH) 3 that has been discovered. The well-aligned [F·B(OH) 3 ] – layers endow a very large bandgap (7.63 eV), comparably large birefringence (0.114 @1064 nm), and the reinforced interlayer bonding of ca. 2.16 × KBe 2 BO 3 F 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Strategically designed metal-free deep-ultraviolet birefringent crystals with superior optical properties

Finding new birefringent materials with deep-ultraviolet (DUV, λ < 200 nm) transparency is urgent, as current commercial materials cannot meet the rapidly growing demands in related application fields. Herein, three guanidinium-based compounds, C(NH 2 ) 3 CH 3 SO 3 , β-C(NH 2 ) 3 Cl, and γ-C(NH 2 ) 3 Cl, all featuring [C(NH 2 ) 3 ·X] ∞ (X = CH 3 SO 3 and Cl) pseudo layers, were designed through structural motif tailoring. Theoretical calculations indicate that these metal-free compounds all possess broad bandgaps (6.49–6.71 eV, HSE06) and remarkable birefringence (cal. 0.166–0.211 @ 1064 nm). Centimeter-sized C(NH 2 ) 3 CH 3 SO 3 crystals have been grown using a feasible aqua-solution method. Subsequently, to further optimize the properties, β/γ-C(NH 2 ) 3 Cl was remolded by further tailoring the [C(NH 2 ) 3 ] + cationic unit and the acceptor Cl - anion, and then the fourth compound NH 2 COF was theoretically constructed. Interestingly, NH 2 COF exhibits the desired coexistence of a wider bandgap (7.87 eV, HSE06) and giant birefringence (cal. 0.241 @ 1064 nm) attributed to its higher density of well-aligned birefringence-active groups (BAGs). Furthermore, among these four designed compounds, C(NH 2 ) 3 CH 3 SO 3 has been experimentally synthesized and exhibits a short UV cutoff edge. Centimeter-sized crystals have been grown using a feasible aqueous solution method. This study provides an effective strategy to optimize the density of BAGs for large birefringence and offers valuable insights into the strategic design of metal-free DUV birefringent crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is critical for sub-1 nm technology nodes but remains constrained by inherent trade-offs among resolution, line-edge roughness (LER), and sensitivity. Stochastic effects originating from photon shot noise, low-energy secondary electron blur, and the random distribution of resist components further limit its advancement toward high numerical-aperture (NA, NA = 0.55) and hyper-NA (NA ≥0.75) EUVL. While the optimization of spin-on chemically amplified resists (CARs) continues, metal-oxide resists (MORs) have emerged as strong candidates for next-generation EUVL by incorporating metals with high EUV absorption coefficients, which enhances both resist sensitivity and etch resistance during pattern transfer. Besides spin-coating, recent advances in vapour-phase techniques, such as vapour-phase infiltration (VPI), chemical vapour deposition (CVD), and molecular atomic layer deposition (MALD), offer promising pathways to achieve new resist platforms, such as dry resists, that satisfy the stringent thickness and uniformity requirements of next-generation EUVL. These methods enable the direct incorporation of metal species into existing resist matrices or the formation of hybrid inorganic–organic resist platforms, thereby improving film uniformity, etch durability, and pattern fidelity while mitigating stochastic defects. This review highlights the latest advancements in vapour-phase-synthesized EUV resists, emphasizing material design, lithographic performance, and the underlying exposure mechanisms. Although still emerging, vapour-phase strategies are paving the way for an all-dry integration framework that could improve EUV patterning workflows and meet the demands of future technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-resolution optical micro-spectroscopy extending from the near-infrared to the vacuum-ultraviolet

Optical characterization of small samples over a wide spectral range with rapid data acquisition is essential for the analysis of many material systems, such as 2D van der Waals layers and their heterostructures. In this paper, we present the design and implementation of a tabletop micro-spectroscopy system covering the near-infrared to the vacuum-ultraviolet (1.2 eV–6.8 eV or ~1.0 μm to 185 nm) using mostly off-the-shelf components. It can measure highly reproducible local reflectance spectra with a total integration time of a few minutes and a full-width-half-maximum spot size of 2.7 by 5.6 μm. For precise positioning, the design also allows simultaneous monitoring of the measurement location and the wide-field image of the sample. We demonstrate ultra-broadband reflectance spectra of exfoliated thin flakes of several wide-gap 2D materials, including ZnPS 3 , hexagonal BN, and Ca(OH) 2 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Study of vacuum ultraviolet emission in helium and helium/nitrogen mixtures

Helium is frequently used as a working medium for the generation of plasmas and is capable of energetic photon emissions. These energetic photon emissions are often attributed to the formation of helium excimer and subsequent photon emission. When the plasma device is exposed to another gas, such as nitrogen, this energetic photon emission can cause photoionization and further ionization wave penetration into the additional gas. Often ignored are the helium resonance emissions that are assumed to be radiation trapped and therefore not pertinent to photoionization. Here, experimental evidence for the presence of helium atomic emission in a pulsed discharge at ten’s of Torr is shown. Simulations of a discharge in similar conditions agree with the experimental measurements. In this context, the role of atomic and molecular helium light emission on photoionization of molecular nitrogen in an ionization wave is studied using a kinetic modeling approach that accounts for radiation dynamics in a developing low-temperature plasma. Three different mixtures of helium at a total pressure of 250 Torr are studied in simulation. Photoionization of the nitrogen molecule by vacuum ultraviolet helium emission is used as the only seed source ahead of the ionization front. It is found that even though radiation trapped, the atomic helium emission lines are the significant source of photoionization of nitrogen. The significant effect of radiation trapped photon emission on ionization wave dynamics demonstrates the need to consider these radiation dynamics in plasma reactors where self-absorbed radiation is ignored.

42 ENGINEERING↗
DOE OSTI2021

Enhanced extreme ultraviolet high-harmonic generation from chromium-doped magnesium oxide

High-order harmonic generation (HHG) from crystals is emerging as a new ultrashort source of coherent extreme ultraviolet (XUV) light. Doping the crystal structure can offer a new way to control the source properties. Here, we present a study of HHG enhancement in the XUV spectral region from an ionic crystal, using dopant-induced vacancy defects, driven by a laser centered at a wavelength of 1.55 μm. Our numerical simulations based on solutions of the semiconductor Bloch equations and density-functional theory are supported by our experimental observations and demonstrate an increase in the XUV high harmonic yield from doped bulk magnesium oxide (MgO) compared to undoped MgO, even at a low defect concentration. The anisotropy of the harmonic emission as a function of the laser polarization shows that the pristine crystal's symmetry is preserved. Our study paves the way toward the control of HHG in solids with complex defects caused by transition-metal doping.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm−2. Examination of the x-ray diffraction (XRD) rocking curves indicates a preferred (100) orientation prior to irradiation, with decrease in crystal quality afterward. Additionally, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. Shifts toward theoretical unstrained positions are observed in the irradiated films, which indicates partial relaxation. Raman spectra also indicate increase in oxygen vacancies (VO) and zinc interstitial defects (Zni) compared to the control sample. Additionally, transient photocurrent measurements performed on each sample at different temperatures showed up to 2× increase in photocurrent decay time constants for irradiated samples vs the control. This persistent photoconductive behavior is linked to the activation of electron and hole traps near the surface, and to the desorption and reabsorption of O2 molecules on the ZnO surface under the influence of UV light. Using an Arrhenius model, trap activation energies were extracted and, by comparing with known energies from the literature, the dominant defects contributing to persistent photoconductivity for each irradiation condition were identified. The persistence of differences in photocurrent transients between different samples months after irradiation indicates that the defects introduced by the suppression of thermally activated dynamic annealing processes have a long-term deleterious effect on device performance.

Heuser, Thomas A. (ORCID:0000000225642400)↗
DOE OSTI2022

Spectral and polarization based imaging in deep-ultraviolet excited photoelectron microscopy

Using photoelectron emission microscopy, nanoscale spectral imaging of atomically thin MoS2 buried between Al2O3 and SiO2 is achieved by monitoring the wavelength and polarization dependence of the photoelectron signal excited by deep-ultraviolet light. Although photons induce the photoemission, images can exhibit resolutions below the photon wavelength as electrons sense the response. To validate this concept, the dependence of photoemission yield on the wavelength and polarization of the exciting light was first measured and then compared to simulations of the optical response quantified with classical optical theory. A close correlation between experiment and theory indicates that photoemission probes the optical interaction of UV-light with the material stack directly. The utility of this probe is then demonstrated when both the spectral and polarization dependence of photoemission observe spatial variation consistent with grains and defects in buried MoS2. Taken together, these new modalities of photoelectron microscopy allow mapping of optical property variation at length scales unobtainable with conventional light-based microscopy.

Beechem, Thomas E. (ORCID:0000000275360719)↗
DOE OSTI2023

Toward streaked collective Thomson scattering measurements on an extreme ultraviolet plasma light source

Here we show through forward modeling calculations that streaked collective Thomson scattering measurements are feasible on laser-produced tin plasmas generated under conditions relevant for extreme ultraviolet lithography. Using a 532 nm probe laser beam, the feasibility of simultaneous measurements of electron plasma wave (EPW) and ion acoustic wave (IAW) spectra is investigated. Absolute photon counts for laser scattering off both waves are calculated. Probe laser electron heating and bremsstrahlung background radiation effects are accounted for. While a large spatiotemporal region can be successfully probed based on the IAW feature, only one measurement location can be accessed through the EPW as a result of the low signal to noise ratio. A portable/traveling tabletop system is proposed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Self-consistent integrated modeling of combined hybrid discharge-laser produced plasma devices for extreme ultraviolet metrology

Discharge- and laser-produced plasma (DLPP) devices are being used as light sources for extreme ultraviolet (EUV) generation. A key challenge for both, DPP and LPP, is achieving sufficient brightness to support the throughput requirements of nanometrology tools. To simulate the environment of a hybrid DLPP device and optimize the EUV output, we have developed an integrated HEIGHTS-DLPP computer simulation package. The package integrates simulation of two evolving plasmas (DPP and LPP) and includes modeling of a set of integrated self-consistent processes: external power source and plasma energy balance, plasma resistive magnetohydrodynamics, plasma heat conduction, detailed radiation transport (RT), and laser absorption and refraction. We simulated and optimized DLPP devices using Xe gas as a target material. We synchronized the external circuit parameters, chamber gas parameters, and laser beam temporal and spatial profiles to achieve maximum EUV output. The full 3D Monte Carlo scheme was integrated for detailed RT and EUV output calculations in Xe using more than 3600 spectral groups. The modeling results are in good agreement with Julich Forschungszentrum experimental data. Theoretical models, developed and integrated into the HEIGHTS package, showed wide capabilities and flexibility. In conclusion, the models and package can be used for optimization of the experimental parameters and settings, investigation of DLPP devices with complex design, analyzing the impact of integrated spatial effects and working timeline arrangement on the final EUV output, and EUV source size, shape, and angular distribution.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Tangential extreme ultraviolet and soft x-ray diagnostic system for time-resolved temperature measurement on the High Beta Tokamak-Extended Pulse

The High Beta Tokamak-Extended Pulse has recently incorporated a tangential multi-energy extreme ultraviolet and soft x-ray diagnostic system. This system enables measurements of the electron temperature and the examination of mode dynamics within the tokamak. While other systems have been built for poloidal views over similar temperature ranges, this is the first multi-energy tangential-view system designed to work in a temperature range below 200 eV in a tokamak. To facilitate these measurements, a filter wheel comprising five distinct groups of dual-filters has been developed and implemented. By employing a combination of 0.1 μm aluminum and 0.2 μm titanium filters, the system allows estimation of electron temperature profiles through reconstruction of the emission profile using the standard “double-foil” technique. The influence of impurities and filter oxide layers on measurement outcomes is examined. Results reveal that, while the absolute electron temperature values may exhibit some deviations, key characteristics like the electron temperature profile shape and inversion radius during sawtooth events remain consistent. This consistency confirms the system’s suitability for core plasma studies. This system has proven effective in detecting and analyzing internal magnetohydrodynamic phenomena, such as sawteeth.

Instruments & Instrumentation↗
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
DOE OSTI2024

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers.

Physics↗