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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Harmonic mixing characteristics of metal-barrier-metal junctions as predicted by electron tunneling

The bias dependence of the nonlinear mixing characteristics of metal-barrier-metal junction currents is deduced assuming an electron tunneling model. The difference-frequency beat voltage at frequency omega sub 1 - (n x omega sub 2), when n is an integer and omega sub 1 and omega sub 2 are the assumed frequencies of two induced currents, is found to have n zeros as the diode bias is varied. Recent experimental observations have demonstrated such characteristics.

Faris, S. M.↗
DOE OSTI2023

A Novel Scalable Array Design for III-V Compound Semiconductor-based Nonvolatile Memory (UltraRAM) with Separate Read-Write Paths

The dream of achieving a universal memory that can provide robust non-volatile memory states along with low-energy operation has been the key driving force of memory research. Despite dominating the memory market, conventional charge-based memories cannot satisfy these requirements. However, UltraRAM, an oxide-free charge-based memory cell, aims to achieve both of these requirements. This device achieves non-volatility (with an endurance of over 10 7 cycles and a retention of over 1000 years) along with switching at low-voltage (±2.3 V) utilizing a triple-barrier resonant tunneling (TBRT) structure made of InAs/AlSb. In this work, we propose an array design for UltraRAM-based memory devices. Our proposed memory array features separate read-write path and eliminates the possibility of accidentally switching the memory states stored in the array. Moreover, our design allows us to read all the cells in a column in one cycle without imposing any limit on the scalability. Besides, since the read operation in our proposed design is independent of the write mechanism, there is flexibility to optimize the read operation for memory and in-memory computing applications.

Alam, Shamiul↗
NASA NTRS1978

Photoinduced currents in metal-barrier-metal junctions

The fabrication and application of metal-barrier-metal tunneling junctions for radiative interactions are discussed. Particular attention is given to the photolithographic fabrication of small area devices and the coupling to such devices via surface plasmon waves which play an important role at infrared and optical frequencies. It has been shown that the junction electron tunneling currents can be strongly coupled to surface plasmon junction modes, and spontaneous and stimulated emission of the latter are possible as well as nonlinear interactions. Finally, results demonstrating the photo-excitation of electrons with subsequent tunneling induced by ultraviolet radiation are presented. It is estimated that quantum efficiencies of the order of 5% and higher are possible in the ultraviolet region.

Guedes, M. P.↗
NASA NTRS1992

Simulation of electron transport in quantum well devices

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Miller, D. R.↗
DOE OSTI2021

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Can a man-made universe be achieved by quantum tunneling without an initial singularity?

Essentially all modern particle theories suggest the possible existence of a false vacuum state; a metastable state with an energy density that cannot be lowered except by means of a very slow phase transition. Inflationary cosmology makes use of such a state to drive the expansion of the big bang, allowing the entire observed universe to evolve from a very small initial mass. A sphere of false vacuum in the present universe, if larger than a certain critical mass, could inflate to form a new universe which would rapidly detach from its parent. A false vacuum bubble of this size, however, cannot be produced classically unless an initial singularity is present from the outset. The possibility is explored that a bubble of subcritical size, which classically would evolve to a maximum size and collapse, might instead tunnel through a barrier to produce a new universe. The tunneling rate using semiclassical quantum gravity is estimated, and some interesting ambiguities in the formulas are discovered.

Guth, Alan H.↗
DOE OSTI2020

Monolayer Semiconductor Auger Detector

Auger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. In this paper, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe 2 as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the effect of QD-QW geometry variations. The relation to the PL experiments is shown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2004

Semiconductor Lasers Containing Quantum Wells in Junctions

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Yang, Rui Q.↗
NASA NTRS2016

Computational Role of Tunneling in a Programmable Quantum Annealer

Quantum tunneling is a phenomenon in which a quantum state tunnels through energy barriers above the energy of the state itself. Tunneling has been hypothesized as an advantageous physical resource for optimization. Here we present the first experimental evidence of a computational role of multiqubit quantum tunneling in the evolution of a programmable quantum annealer. We developed a theoretical model based on a NIBA Quantum Master Equation to describe the multi-qubit dissipative cotunneling effects under the complex noise characteristics of such quantum devices.We start by considering a computational primitive, the simplest non-convex optimization problem consisting of just one global and one local minimum. The quantum evolutions enable tunneling to the global minimum while the corresponding classical paths are trapped in a false minimum. In our study the non-convex potentials are realized by frustrated networks of qubit clusters with strong intra-cluster coupling. We show that the collective effect of the quantum environment is suppressed in the critical phase during the evolution where quantum tunneling decides the right path to solution. In a later stage dissipation facilitates the multiqubit cotunneling leading to the solution state. The predictions of the model accurately describe the experimental data from the D-WaveII quantum annealer at NASA Ames. In our computational primitive the temperature dependence of the probability of success in the quantum model is opposite to that of the classical paths with thermal hopping. Specially, we provide an analysis of an optimization problem with sixteen qubits,demonstrating eight qubit cotunneling that increases success probabilities. Furthermore, we report results for larger problems with up to 200 qubits that contain the primitive as subproblems.

hard problems↗
DOE OSTI2024

Correlating aluminum layer deposition rates, Josephson junction microstructure, and superconducting qubits’ performance

An ultra-thin aluminum oxide layer is a key component for Josephson junctions (JJ) in superconducting quantum bits (qubits). This layer serves as a barrier layer for Cooper pairs tunneling between the superconducting electrodes and significantly influences the overall performance of the junction. In this study, we investigate the impact of aluminum deposition rates on the microstructure and chemical variation of the aluminum oxide layer, as well as the device's yields and qubits’ lifetimes. Surprisingly, although the oxide layer roughness and thickness variation improve noticeably with an increasing Al deposition rate from 0.5 Å/s to 5 Å/s, the qubit's coherence time is almost unchanged. We attribute this to the fact that Cooper pairs tunnel only through the thinnest region of the barrier. Additionally, we revealed a stress-induced grain boundary sliding short-circuit failure mechanism in the JJ. Our discovery provides a vital understanding of oxide microstructure and JJ functionality, which are critical for improving the coherence time of superconducting qubits.

Coherence time↗
NASA NTRS1991

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W/sq cm, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.

Brown, E. R.↗
NASA NTRS1997

Acoustic Barrier Facilitates Inlet Noise Measurements for Aft-Dominated Fans

Noise levels for modern high-bypass-ratio subsonic turbofans tend to be aft dominated. That is, the highest flyover noise levels radiate from the fan exit. Measuring fan inlet sound radiation without aft radiation contamination requires selective suppression of the aft noise. In NASA Lewis Research Center's 9- by 15-Foot Low-Speed Wind Tunnel, an acoustic barrier was used to effectively isolate the inlet noise field for a model of an advanced turbofan. This proof-of-concept test was performed on a model turbofan manufactured for NASA Lewis by the Allison Engine Company as part of the Advanced Subsonic Technology program. The 8-cm-thick acoustic barrier was constructed in sections that were joined upon installation. These sections, which were composed of a wood frame with typically 0.64-cm tempered fiberboard skins, extended from the tunnel's floor to its ceiling and had an axial length of 61 cm. On the fan side of the barrier just downstream of the leading edge, the upstream section had an acoustic treatment--a bulk absorber with a perforated metal skin. It had a nominal full height and an axial length of 46 cm. In addition, an elliptical leading edge was faired into the upstream barrier section. The barrier was mounted on tracks on the tunnel floor and ceiling at a sideline distance of 15 cm from the fan nacelle. Tests were made with the barrier leading edge at the fan inlet highlight plane and 15 cm further aft. The barrier extended downstream essentially to the end of the treated tunnel test section.

Source record↗
NASA NTRS1990

On the dissociation energy of BH

The dissociation energy D(0) of the X 1Sigma(+) state has been determined to be 81.5 + or - 0.5 kcal/mol. This value includes an estimate for basis set incompleteness and for core-core and core-valence correlation. The barrier in the A 1Pi state potential is estimated to be 1.9 + or - 0.2 kcal/mol. By analyzing the tunneling through the barrier, it is demonstrated that D(0) and the predissociation limit differ by about 0.8-0.9 kcal/mol. Thus the experimental predissociation limit of 82.5 + or - 0.4 kcal/mol is consistent with the values computed for D(0) and the barrier in this work.

Bauschlicher, Charles W., Jr.↗
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
NASA NTRS2003

Vertical Electron Transport through PbS-EuS Structures

Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.

Wrotek, S.↗