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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si|SiO x |AlO x |MoO x |metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky barrier height. ALD AlO x provides a synthesis-tunable fixed charge and can provide excellent field effect passivation at the SiO x |AlO x interface. A large (>1 × 10 12 q.cm –2 ) negative fixed charge density was expected to decrease Schottky barrier height on p-type silicon and increase Schottky barrier height on n-type silicon by up to 0.4 eV based on an electrostatic model. Fixed charge density and interface trap state density were measured using a thick layer of AlO x in metal oxide semiconductor capacitor structures (MOSCAPs); Schottky barrier height and specific contact resistivity were measured using a tunneling-active layer of AlO x in contacted structures with MoO x . In some samples, HfO x interface layers were inserted between AlO x and silicon to quench the fixed negative charge. The Schottky barrier height was found to vary with processing conditions but did not have a strong correlation with expected fixed charge density. Here, while fixed charge may play a role in determining the Schottky barrier height, other parameters also have significant affect. Further work is needed to minimize contact resistivity and elucidate other factors impacting the Schottky barrier height.

14 SOLAR ENERGY↗
NASA NTRS1995

Resonant Tunneling Analog-To-Digital Converter

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

Broekaert, T. P. E.↗
DOE OSTI2022

Probabilistic Neural Computing with Stochastic Devices

Abstract The brain has effectively proven a powerful inspiration for the development of computing architectures in which processing is tightly integrated with memory, communication is event‐driven, and analog computation can be performed at scale. These neuromorphic systems increasingly show an ability to improve the efficiency and speed of scientific computing and artificial intelligence applications. Herein, it is proposed that the brain's ubiquitous stochasticity represents an additional source of inspiration for expanding the reach of neuromorphic computing to probabilistic applications. To date, many efforts exploring probabilistic computing have focused primarily on one scale of the microelectronics stack, such as implementing probabilistic algorithms on deterministic hardware or developing probabilistic devices and circuits with the expectation that they will be leveraged by eventual probabilistic architectures. A co‐design vision is described by which large numbers of devices, such as magnetic tunnel junctions and tunnel diodes, can be operated in a stochastic regime and incorporated into a scalable neuromorphic architecture that can impact a number of probabilistic computing applications, such as Monte Carlo simulations and Bayesian neural networks. Finally, a framework is presented to categorize increasingly advanced hardware‐based probabilistic computing technologies.

Misra, Shashank↗
DOE OSTI2022

Discovery of quantum phases in the Shastry-Sutherland compound SrCu 2 (BO 3 ) 2 under extreme conditions of field and pressure

The 2-dimensional layered oxide material SrCu 2 (BO 3 ) 2 , long studied as a realization of the Shastry-Sutherland spin topology, exhibits a range of intriguing physics as a function of both hydrostatic pressure and magnetic field, with a still debated intermediate plaquette phase appearing at approximately 20 kbar and a possible deconfined critical point at higher pressure. Here, we employ a tunnel diode oscillator (TDO) technique to probe the behavior in the combined extreme conditions of high pressure, high magnetic field, and low temperature. We reveal an extensive phase space consisting of multiple magnetic analogs of the elusive supersolid phase and a magnetization plateau. In particular, a 10 x 2 supersolid and a 1/5 plateau, identified by infinite Projected Entangled Pair States (iPEPS) calculations, are found to rely on the presence of both magnetic and non-magnetic particles in the sea of dimer singlets. These states are best understood as descendants of the full-plaquette phase, the leading candidate for the intermediate phase of SrCu 2 (BO 3 ) 2

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Direct observation of electric field-induced magnetism in a molecular magnet

Abstract We report the direct observation of an electrically-induced magnetic susceptibility in the molecular nano- magnet [Fe 3 O(O 2 CPh) 6 (py) 3 ]ClO 4 · py, an Fe 3 trimer. This magnetoelectric effect results from the breaking of spatial inversion symmetry due to the spin configurations of the antiferromagnetic trimer. Both static and very low frequency electric fields were used. Fractional changes of the magnetic susceptibility of 11 ppb $$\pm 2$$ ± 2 per kVm -1 for the temperature range 8 . 5 < T < 13 . 5 K were observed for applied electric fields up to 62 kV m − 1 . The changes in susceptibility were measured using a tunnel diode oscillator operating at liquid helium temperatures while the sample is held at a higher regulated temperature.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Local characterization of a heavy-fermion superconductor via sub-Kelvin magnetic force microscopy

Using magnetic force microscopy operating at sub-Kelvin temperatures, we characterize the heavy fermion superconductor CeCoIn5. We pinpoint the absolute London penetration depth of λ(0)=435 ± 20 nm and report its temperature dependence, which is closely linked to the symmetry of the superconducting gap. In addition, we directly measure the pinning force of individual Abrikosov vortices and estimate the critical current density of jc=9×104 A/cm2. In contrast to the related, well-established tunnel diode oscillator technique, our method is capable of resolving inhomogeneities locally on the micrometer scale at ultra-low temperature.

Wulferding, Dirk (ORCID:0000000342792109)↗
DOE OSTI2022

Proximity enhanced magnetism at NiFe 2 O 4 /Graphene interface

Here, we explore the change in effective magnetic anisotropy of the ferrimagnetic (FM) insulator nickel ferrite (NFO) thin film due to the inclusion of monolayer graphene (MLG) grown on top of the NFO layer. This was done by performing radio frequency (RF) transverse susceptibility (TS) measurements on bare NFO and NFO/MLG bilayer samples for both in-plane (IP) and out-of-plane (OOP) configurations utilizing a tunnel diode oscillator technique. Our magnetometry measurements indicated an enhancement in the overall saturation magnetization of the NFO/MLG bilayer with respect to the bare NFO film. The TS measurements reveal that the inclusion of MLG reduces the effective magnetic anisotropy for both IP and OOP configurations drastically, by up to a factor of 2 over the temperature range 40 K ≤ T ≤ 280 K. Since NFO is a magnetic substrate, it is possible that NFO could induce magnetic ordering in MLG at the NFO/MLG interface via the magnetic proximity effect. Furthermore, since NFO is insulating and MLG is a semimetal, there likely exists a large conductivity difference at the interface, making charge transfer plausible. These two effects could modify the interfacial magnetism leading to a change in the effective magnetic anisotropy. These results highlight the importance of understanding the interfacial magnetism of FM/MLG heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Low-temperature high-frequency dynamic magnetic susceptibility of classical spin-ice Dy 2 Ti 2 O 7

In this study, radio-frequency (14.6 MHz) AC magnetic susceptibility, , of Dy 2 Ti 2 O 7 was measured using self-oscillating tunnel-diode resonator. Measurements were made with the excitation AC field parallel to the superimposed DC magnetic field up to 5 T in a wide temperature range from 50 mK to 100 K. At 14.6 MHz, a known broad peak of from kHz—range audio-frequency measurements around 15 K for both [111] and [110] directions shifts to 45 K, continuing the Arrhenius activated behavior with the same activation energy barrier of E a ≈ 230 K. Magnetic field dependence of along [111] reproduces previously reported low-temperature two-in-two-out to three-in-one-out spin configuration transition at about 1 T, and an intermediate phase between 1 and 1.5 T. The boundaries of the intermediate phase show reasonable overlap with the literature data and connect at a critical endpoint of the first order transition line, suggesting that these features are frequency independent. An unusual upturn of the magnetic susceptibility at T → 0 was observed in magnetic fields between 1.5 T and 2 T for both magnetic field directions, before fully polarized configuration sets in above 2 T.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Possible unconventional order parameter in single crystals of SrPt 3 P superconductor

Here, anisotropic properties of single crystals of SrPt 3 P were studied using London penetration depth and electrical resistivity measurements. The upper critical field, $H_{c2}(T)$, was determined from four-probe electrical resistivity measurements for three orthogonal directions of a magnetic field with respect to the crystal. The London penetration depth, $λ(T)$, was determined from the magnetic susceptibility of the Meissner–London state measured using a tunnel-diode resonator technique. Whereas $H_{c2}(T)$ and the normal-state $ρ(T)$ are practically identical for all three magnetic field orientations, the London penetration depth shows significant unidirectional anisotropy. The low-temperature $λ(T)$ is exponentially attenuated when a small excitation radiofrequency magnetic field, $H_{rf}$, is applied along the c"-direction, in which case screening currents flow in the a"b"-plane, while for the other two orientations, $H_{rf}$∥ a" and $H_{rf}$ ∥ b", the London penetration depth shows a much stronger, $λ(T)$ ~ T 2 , variation. Such unusual and contrasting behavior of the two anisotropies, $γ_{H}$(T) = $H_{c2}$/$H_{c2,c}$ = $ξ_{ab}$/$ξ_{c}$ and $γ_{λ}$(T) = $λ_{c}$\$λ_{ab'}$, imposes significant constraints on the possible order parameter. Although our measurements are insufficient to derive conclusively the superconducting gap anisotropy, the order parameter with two point nodes and a modulation in the perpendicular direction is qualitatively consistent with the experimental observations.

anisotropic superconducting gap↗
DOE OSTI2021

Campbell penetration depth in low carrier density superconductor YPtBi

Magnetic penetration depth, λ m , was measured as a function of temperature and magnetic field in single crystals of low carrier density superconductor YPtBi by using a tunnel-diode oscillator technique. Measurements in zero DC magnetic field yield London penetration depth, λ L ( T ) , but in the applied field the signal includes the Campbell penetration depth, λ C ( T ) , which is the characteristic length of the attenuation of small excitation field, H AC , into the Abrikosov vortex lattice due to its elasticity. Whereas the magnetic field dependent λ C exhibit λ C ~ B p with p = 1 / 2 in most of the conventional and unconventional superconductors, we found that p ≈ 0.23 << 1 / 2 in YPtBi due to rapid suppression of the pinning strength. From the measured λ C ( T , H ) , the critical current density is j c ≈ 40 A / cm 2 at 75 mK. We find that this is orders of magnitude lower than that of conventional superconductors of comparable T c .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Intermediate scattering potential strength in electron-irradiated YBa 2 Cu 3 O 7-δ from London penetration depth measurements

Temperature-dependent London penetration depth, λ(T), of a high quality optimally-doped YBa 2 Cu 3 O 7-δ single crystal was measured using tunnel-diode-resonator technique. Controlled artificial disorder was induced by low-temperature 20 K irradiation by 2.5 MeV electrons at two large doses of 3.8 x 10 19 and 5.3 x 10 19 electrons per cm 2 . The irradiation caused significant suppression of the superconductor's critical temperature, T c , from 94.6 K to 90.0 K, and to 78.7 K, respectively. The low-temperature behavior of λ(T) evolves from a T-linear in pristine state to a T 2 behavior after irradiation, expected for a line-nodal d-wave superconductor. However, the original theory that explained such behavior assumed a unitary limit of the scattering potential, whereas usually in normal metals and semiconductors, Born scattering is sufficient to describe the experiment. To estimate the scattering potential strength, we calculated the superfluid density, ρ s (t = T/T c ) = λ 2 (0)/λ 2 (T), varying the amount and strength of non-magnetic scattering using a self-consistent t-matrix theory. Fitting the obtained curves to a power law, ρ s = 1 - Rt n , and to a polynomial, ρ s = 1 - At - Bt 2 , and comparing the coefficients n in one set and A and B in another with the experimental values, we estimate the phase shift to be around 70 and 65°, respectively. We correlate this result with the evolution of the density of states with nonmagnetic disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Nontrivial Fermi surface topology of the kagome superconductor CsV 3 Sb 5 probed by de Haas–van Alphen oscillations

Here, we have investigated the normal state Fermi-surface properties of the kagome superconductor CsV 3 Sb 5 using torque magnetometry with applied fields (H) up to 35 T. The torque signal shows clear de Haas-van Alphen (dHvA) oscillations above 15 T. The oscillations are smooth and consist of seven distinct frequencies with values from similar to ~18 T to 2135 T. The presence of higher frequencies in CsV 3 Sb 5 is further confirmed by carrying out additional measurements using the tunnel diode oscillator technique. All frequencies measured at different tilt angles (θ) of the field direction with respect to the c axis show a 1/cosθ dependence, implying that the Fermi surfaces corresponding to these frequencies are two dimensional (2D). The absence of dHvA oscillations at θ = 90° further supports the presence of 2D Fermi surfaces. The Berry phase (φ) determined from the Landau level fan diagram for all frequencies is similar to ~ 0.4. This value is close to the theoretical value of φ = 0.5 for a nontrivial system, which strongly supports the nontrivial topology of the Fermi surfaces of these frequencies. Several quantities characterizing the Fermi surface are calculated employing the Lifshitz-Kosevich theory. These findings are crucial for exploring the interplay between nontrivial band topology, charge-density wave, and unconventional superconductivity of CsV 3 Sb 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Superconducting properties and gap structure of the topological superconductor candidate Ti 3 Sb

Here, we present a study of the superconducting properties of the candidate topological superconductor Ti 3 Sb. Electrical transport measurements show zero resistance with a T c,onset of ≈ 5.9 K with a transition width ΔT c ≈ 0.6 K. The superconducting phase boundaries as derived from magnetotransport and magnetic susceptibility measurements agree well. We estimate an upper critical field B c2 (0) ≈ 4.5 T. A Ginzburg-Landau (GL) analysis yields values of the coherence length and penetration depth of ξ = 6.2 nm and λ = 340 nm, respectively, and a GL parameter κ ≈ 55, indicating extreme type-II behavior. Furthermore, we observe a step height in the specific heat $\frac{Δ C_e}{γ T_c}$ ≈ 1.61 ± 0.24 (with T c = 4.8 ± 0.4 K), a value larger than the Bardeen-Cooper-Schrieffer value of 1.43, suggesting modest coupling. Measurements of the temperature dependence of the London penetration depth via the tunnel-diode oscillator technique down to ≈ 450 mK show a full superconducting gap, consistent with a conventional s-wave gap structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1965

Simple circuit produces high-speed, fixed duration pulses

Circuit generates an output pulse of fixed width from a variable width input pulse. The circuit consists of a tunnel diode in parallel with an inductance driven by a constant current generator. It is used for pulsed communication equipment design.

Garrahan, N. M.↗
NASA NTRS1966

Circuit protects regulated power supply against overload current

Sensing circuit in which a tunnel diode controls a series regulator transistor protects a low voltage transistorized dc regulator from damage by excessive load currents. When a fault occurs, the faulty circuit is limited to a preset percentage of the current when limiting first occurs.

Airth, H. B.↗
NASA NTRS1967

Solid-state time-to-pulse-height converter developed

Solid-state circuit produces an output pulse with an amplitude directly proportional to the time interval between two input pulses. It uses selected circuit options to achieve variable mode operation and a tunnel diode controls the charging time of a capacitor in proportion to the time interval being measured.

Lynch, R. J.↗