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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage.

Courey, Karim J.↗
DOE OSTI2019

Atomic Layer-Deposited Al{sub 2}O{sub 3} Interlayer for Improved Tribological and Anti-corrosion Properties of TiN Hard Coating on 316L Stainless Steel

A dense Al{sub 2}O{sub 3} interlayer was inserted into TiN to enhance the tribological and anti-corrosion properties of TiN hard coating via a hybrid process of magnetron sputtering and atomic layer deposition (ALD). The influence of the ALD-Al{sub 2}O{sub 3} layer on the microstructure, mechanical, tribological and anti-corrosion properties of TiN was examined. The TiN-Al{sub 2}O{sub 3} coating exhibits low friction coefficient and specific wear rate, due to the structure change and columnar refinement caused by the addition of amorphous ALD-Al{sub 2}O{sub 3} interlay which improves the mechanical properties of hard coating. The improved corrosion properties of TiN are attributed to the fact that the insulating ALD-Al{sub 2}O{sub 3} used as a sealing layer can prevent the corrosive chlorine ions migrating into the lower TiN layer and block the charge transport in coatings. Moreover, raising the insertion position of ALD-Al{sub 2}O{sub 3} layer away from the steel substrate results in a further increase in the anti-corrosion property of TiN-Al{sub 2}O{sub 3} composite coating.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Stability of Tin-Lead Halide Perovskite Solar Cells

Tin-lead perovskites have low band gaps (1.2 eV - 1.4 eV) that offer complementary absorption spectra to mixed halide perovskites with band gaps in the range of 1.6 eV - 1.85 eV. In combination, tin-lead and mixed halide perovskites can be used to make efficient all-perovskite tandem solar cells. While these can achieve high efficiency, they are hampered by the unproven longterm stability of tin-containing perovskites. We make the first demonstration of tin-lead perovskite solar cells that pass benchmark 1000-hour tests of stability under stressors of heat, light, and atmospheric exposure. We identify that mixed tin-lead perovskites oxidise by a different chemical pathway, one that is much less favourable, than the oxidation pathway followed by pure tin perovskites, making them significantly more stable. Fortuitously, mixed tin-lead perovskites also have band gaps that are close to ideal for the rear cell of an all-perovskite monolithic two-junction tandem. Beyond selecting the composition of the perovskite to be one that has inherently suppressed tendency to oxidise, we also fabricate a novel heterojunction-based architecture that eliminates the commonly used acidic PEDOT:PSS layer, which leads to enhanced stability. By packaging the resulting solar cell in a glass-on-glass package with a pliable low-elastic-modulus polyolefin encapsulant and a butyl rubber edge seal, we also demonstrate that the low band gap perovskite solar cell that passes the IEC damp heat test for thin film solar cells - a milestone that demonstrates the removal of a significant impediment to the commercialization of high efficiency perovskite tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Effect of Mg-Bearing Oxide(+TiN) Inclusion on Microstructure of Fe-16 Mass Pct Cr Ferritic Alloy and Its Evolution During Heating at 1573 K (1300 °C)

Both the effects of Mg-bearing oxide and Mg-bearing oxide +TiN inclusions on the microstructures of Fe-16 mass pct Cr alloy should be clarified. In this paper, the effects of Mg-bearing oxide(+TiN) inclusions on the microstructures of Fe-16 mass pct Cr ferritic alloy and changes due to the inclusions during heating at 1573 K (1300 °C) were studied by manual and automatic SEM-EDS analyses. Three alloys were used as specimens. The inclusions were Al{sub 2}TiO{sub 4} +TiN with a small amount of TiN in alloy #1, Al{sub 2}(Mg, Ti)O{sub 4} in alloy #2 and Al{sub 2}(Mg, Ti)O{sub 4} +TiN in alloy #3. The average grain size was smaller, and the ratio of columnar grains was lower in the as-cast alloy #2 and as-cast alloy #3 than that in the as-cast alloy #1. This is attributed to the heterogeneous nucleation of delta ferrite on Al{sub 2}(Mg, Ti)O{sub 4} during solidification. Refinement of the microstructures of ferritic steel by Mg-bearing oxide + multi-TiN inclusions is proposed. Changes in composition, aspect ratio, and size distribution of inclusions in each alloy during heating were investigated systematically. Mg-bearing oxide(+TiN) was dispersed in both the as-cast alloys and heated alloys, which contributed to microstructural refinement of the heated alloys through the pinning effect.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Solar reduction of carbon dioxide on copper-tin electrocatalysts with energy conversion efficiency near 20%

Abstract Copper catalysts modified with tin have been demonstrated to be selective for the electroreduction of carbon dioxide to carbon monoxide. However, such catalysts require the precise control of tin loading amount. Here, we develop a copper/tin-oxide catalyst with dominant tin oxide surface being formed via a spontaneous exchange reaction between sputtered tin and copper oxide. Even though the surface of this catalyst is tin-rich, it achieves an excellent performance towards carbon monoxide production in a flow cell. This contrasts with copper/tin-oxide prepared via atomic layer deposition since it yields selectivity towards carbon monoxide only on a copper-rich surface. Mechanism studies reveal that the tin sites on the tin-rich copper/tin-oxide surface achieve a suitable binding with adsorbed carbon monoxide under the presence of copper. Powered by a triple-junction solar cell, the copper/tin-oxide based electrolyzer sets a new benchmark solar-to-chemical energy conversion efficiency of 19.9 percent with a Faradaic efficiency of 98.9 percent towards carbon monoxide under simulated standard air mass 1.5 global illumination.

14 SOLAR ENERGY↗
DOE OSTI2015

Cu diffusion in single-crystal and polycrystalline TiN barrier layers: A high-resolution experimental study supported by first-principles calculations

Dense single-crystal and polycrystalline TiN/Cu stacks were prepared by unbalanced DC magnetron sputter deposition at a substrate temperature of 700 °C and a pulsed bias potential of −100 V. The microstructural variation was achieved by using two different substrate materials, MgO(001) and thermally oxidized Si(001), respectively. Subsequently, the stacks were subjected to isothermal annealing treatments at 900 °C for 1 h in high vacuum to induce the diffusion of Cu into the TiN. The performance of the TiN diffusion barrier layers was evaluated by cross-sectional transmission electron microscopy in combination with energy-dispersive X-ray spectrometry mapping and atom probe tomography. No Cu penetration was evident in the single-crystal stack up to annealing temperatures of 900 °C, due to the low density of line and planar defects in single-crystal TiN. However, at higher annealing temperatures when diffusion becomes more prominent, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N sublattice for the experimental N/Ti ratio. In comparison, localized diffusion of Cu along grain boundaries in the columnar polycrystalline TiN barriers was detected after the annealing treatment. The maximum observed diffusion length was approximately 30 nm, yielding a grain boundary diffusion coefficient of the order of 10{sup −16} cm{sup 2} s{sup −1} at 900 °C. This is 10 to 100 times less than for comparable underdense polycrystalline TiN coatings deposited without external substrate heating or bias potential. The combined numerical and experimental approach presented in this paper enables the contrasting juxtaposition of diffusion phenomena and mechanisms in two TiN coatings, which differ from each other only in the presence of grain boundaries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Tin removal by an annular surface wave plasma antenna in an extreme ultraviolet lithography source

Tin contamination of the collector mirror surface remains one of the crucial issues of EUV (Extreme Ultraviolet) sources, directly impacting the availability of the tool. Hydrogen plasma-based tin removal processes employ hydrogen radicals and ions to interact with tin deposits to form gaseous tin hydride (SnH 4 ), which can be removed through pumping. An annular surface wave plasma (SWP) source developed at the University of Illinois—Urbana Champaign is integrated into the cone and perimeter of the collection mirror for in situ tin removal. The SWP is characterized by high ion and radical densities, low electron temperature, and local generation where etching is needed. This method has the potential to significantly reduce downtime and increase mirror lifetime. Radical probe measurements show hydrogen radical densities in the order of 10 19 m -3 , while Langmuir probe measurements show electron temperatures of up to 6 eV and plasma densities on the order of 10 17–18 m -3 . The generated ions are essential to the tin cleaning and have sufficiently low energy to cause no damage to the collector capping layer. Tin etch rates of up to 270 nm/min were observed in a variety of experimental conditions, including various powers, pressures, flowrates, and temperatures. In conclusion, the high etch rates demonstrated in this study exceed the expected contamination rate of the EUV source.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Study of a linear surface wave plasma source for tin removal in an extreme ultraviolet source

Tin deposition mitigation employs hydrogen radicals and ions, formed in a hydrogen plasma, to interact with tin to form tin hydride (SnH 4 ) in the gaseous state, which is then pumped away. Surface wave plasma (SWP) technology developed at Illinois generates hydrogen radicals and ions, resulting in tin etch rates that are high enough to keep extreme ultraviolet (EUV) lithographic tools clean. An advantage of an SWP antenna is the ability to generate a high density of hydrogen radicals and hydrogen ions directly at the desired etching location. In situ etching of tin enables high availability EUV tools by maintaining high reflectivity of the multilayer mirror of the collector. Additionally, the SWP is characterized with low ion energies and low electron temperature, such that the multilayer mirror does not suffer any damage from sputtering or implantation of hydrogen ions during operation. Here, experiments elucidating the fundamental processes of tin removal are conducted by varying pressure, power, surface temperature, and gas flow rate in order to observe the etch rate behavior. Our results have shown that the presence of hydrogen ions increases etch rates because ion bombardment weakens Sn–Sn bonds, which, in turn, allows for a higher rate of chemical etching by the radicals. The ion bombardment reduces the number of radicals needed to etch a single tin atom to the range of 10 2 –10 3 . The linear SWP antenna yields plasma densities on the order of 10 17 to 10 18 m -3 and radical densities on the order of 10 18 to 10 19 m -3 , allowing for greater utilization of ion etch enhancement. Etch rates of up to 200 nm/min have been achieved. The surface temperature of the samples is an important factor in the etching process such that the decrease in the surface temperature increases the etch rates and decreases the hydrogen desorption rates. In addition, a kinetic etch model is developed to explain the behavior of etch rates as a function of surface temperature. Furthermore, results from experiments performed in an Illinois NXE:3100 chamber will be discussed.

42 ENGINEERING↗
DOE OSTI2024

Plasmon assisted synthesis of TiN-supported single-atom nickel catalysts

We report the deposition of single atom nickel catalyst on refractory plasmonic titanium nitride (TiN) nanomaterials supports using the wet synthesis method under visible light irradiation. TiN nanoparticles efficiently absorb visible light to generate photoexcited electrons and holes. Photoexcited electrons reduce nickel precursor to deposit Ni atoms on TiN nanoparticles’ surface. The generated hot holes are scavenged by the methanol. We studied the Ni deposition on TiN nanoparticles by varying light intensity, light exposure time, and metal precursor concentration. These studies confirmed the photodeposition method is driven by hot electrons and helped us to find optimum synthesis conditions for single atoms deposition. We characterized the nanocatalysts using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). We used density functional theory (DFT) calculations to predict favorable deposition sites and aggregation energy of Ni atoms on TiN. Surface defect sites of TiN are most favorable for single nickel atoms depositions. Interestingly, the oxygen sites on native surface oxide layer of TiN also exhibit strong binding with the single Ni atoms. Plasmon enhanced synthesis method can facilitate photodeposition of single atom catalysts on a wide class of metallic supports with plasmonic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Graphene oxide supported tin dioxide: synthetic approaches and electrochemical characterization as anodes for lithium- and sodium-ion batteries

The review addresses synthetic approaches to composite materials based on graphene oxide and nano tin dioxide and their electrochemical properties as anodes for lithium- and sodiumion batteries. The introduction of a carbon matrix into the composite material improves the electrochemical characteristics of the anodes. In most methods, the synthesis of graphene oxide–tin dioxide composites is based on the use of tin(II,IV) chlorides as the starting compounds, and the most efficient electrode materials were obtained by the hydrothermal or solvothermal routes. Thermal processing is much more economic than the gas phase deposition protocols but requires heating of a large volume of dilute tin oxide dispersions in an autoclave. Mechanochemistry (ball milling) is also economically unfavorable for the synthesis of composite materials. In addition, large volumes of acidic wastes that should be neutralized and safely discarded are formed when tin chlorides are used. An alternative environmentally friendly technique based on the use of aqueous peroxide solutions can be applied for the production of efficient anode materials based on graphene oxide and tin dioxide. This process does not involve acidic wastes, uses hydrogen peroxide and ethanol as reagents, and accomplishes film deposition (coating) at room temperature. Final thermal treatment is required only for the active material, which minimizes energy expenses and equipment costs.

25 ENERGY STORAGE↗
DOE OSTI2015

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Low Exciton Binding Energies and Localized Exciton–Polaron States in 2D Tin Halide Perovskites

We report aside from band gap reduction, little is understood about the effect of the tin-for-lead substitution on the fundamental optical and optoelectronic properties of metal halide perovskites (MHPs), especially when transitioning from 3D to lower dimensional structures. Herein, we take advantage of the spectro-scopic isolation of excitons in 2D MHPs to study the intrinsic differences between lead and tin MHPs. The exciton’s spectral fine structure indicates a larger polaron binding energy in tin MHPs. Additionally, the electroabsorption responses of the 2D MHPs demonstrates that tin MHPs have exciton binding energies 1.5–2× lower than that of their lead counterparts. Despite the lower binding energy, the excitons in tin MHPs are more Frenkel-like with small radii, small polarizabilities, and large dipole moments. These results are interpreted as consequences of small polaron formation and disorder-induced dipole moments. This work highlights the wide range of intrinsic differences between lead and tin MHPs as well as the complexity of excited states in these systems.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Rheological Evolution of Ti-Bearing Slag with Different Volume Fractions of TiN

The effect of the volume fraction of TiN (0 to 4.27 vol pct) on the rheological behaviors of Ti-bearing slag, including the viscosity and the constitutive equation, was investigated using a Brookfield rheometer at 1773 K. With the increasing TiN, the viscosity and the shear stress increased substantially, and the slag is converted from Newtonian to non-Newtonian. When the slag samples were dispersed with TiN (1.00 to 4.27 vol pct), the measured viscosities were greater than those estimated by the Einstein–Roscoe equation, and the complex internal structure was suggested to be responsible for the extra enhancement of the viscosity beyond that caused by TiN itself. The viscosity curves of the slag samples containing TiN (1.00 to 4.27 vol pct) were divided into three regions depending on the critical shear rate and the initial shear rate. In the Newtonian region, the apparent volume fraction of TiN was defined and used to develop a semiempirical model based on the Einstein–Roscoe equation to describe the viscosity. In the two non-Newtonian regions, the shear rate, the yield stress, and the viscosity differences between the non-Newtonians regions and the Newtonian regions were applied in developing the viscosity models.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Shock-ramp compression of tin near the melt line

Tin has been shock compressed to ~69 GPa on the Hugoniot using Sandia’s Z Accelerator. A shockless compression wave closely followed the shock wave to ramp compress the shocked tin and probe a high temperature quasi-isentrope near the melt line. A new hybrid backwards integration – Lagrangian analysis routine was applied to the velocity waveforms to obtain the Lagrangian sound velocity of the tin as a function of particle velocity. Surprisingly, an elastic wave was observed on initial compression from the shock state. The presence of the elastic wave indicates tin possess a small but finite strength at this shock pressure, strongly indicating a (mostly) solid state. Finally, high fidelity shock Hugoniot measurements on tin sound velocities in this stress range may be required to refine the shock melting stress for pure tin.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of thickness on metal-to-semiconductor transition in 2-dimensional TiN thin films

Titanium nitride thin films have been grown on c-plane sapphire substrates using a pulsed laser deposition technique in the thickness range of 6–45 nm. X-ray diffraction (XRD) analysis has demonstrated TiN (111) as the preferred orientation of growth on the sapphire substrates. The XRD measurements have also indicated that orientational alignment between the TiN and the sapphire improved with an increase in the TiN film thickness. A change in the resistivity behavior of the TiN thin films from metallic to semiconducting has been observed as the TiN film thickness is reduced below 15 nm. Analyzing and fitting of TiN films’ conductivity data have shown that while the Arrhenius law governs their conductivity in the temperature range of 300–350 K, conductivity values of the films follow the variable range hopping mechanism below 300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Alloying effect of niobium and tin on the zirconium alloy fuel cladding behavior at high temperature oxidation in steam - 2016-0072

As the materials for fuel claddings for water-cooled reactors, binary and multicomponent zirconium alloys zirconium-niobium (Zr-Nb) (E110, M5), zirconium-tin-iron (Zr-Sn-Fe) (Zircaloy-2,-4), and zirconium-niobium-tin-iron (Zr-Nb-Sn-Fe) (E635, ZIRLO{sup R} ) most commonly are used. Improvement extends, in particular, by varying their composition by niobium, tin, and iron. At the same time, importance is given to ensuring the safe operation of the fuel rods not only in normal conditions but also in emergency situations such as a loss of coolant accident. In this paper, we present the research results of studies of the influence of alloying elements niobium, tin, and iron on corrosion resistance and embrittlement at high-temperature steam oxidation of fuel claddings based on the alloy types Zr-xNb (x=1.0/2.5) and Zr-xNb-ySn-zFe (x=0.6/2.4; y=0.24/1.1; z=0.18/0.34) made by using zirconium sponge. We conducted high-temperature steam oxidation tests at temperatures of 1,000 deg. C, 1,100 deg. C, and 1,200 deg. C with continuous measurement of the weight gain during the experiment and subsequent cooling in steam with rate ∼ 20 deg. C/s. We conducted studies of kinetics of high-temperature oxidation in steam, structural-phase state changes, alloying elements distribution, absorbed hydrogen content, and residual ductility after rapid cooling of the oxidized specimens. We revealed the difference in the oxidation kinetics of the materials studied, which decreased as the oxidation temperature increased. Likewise, an increase of the tin content in the alloy influenced a specimen's breakaway oxidation intensification at 1,000 deg. C. This shows that the mechanical properties of fuel claddings oxidized under the same conditions depend on their alloying composition, and the hydrogen fraction is absorbed by the specimen and formed by the oxidation of ZrO{sub 2}, α-Zr(O), and ex-β layer structures, which in turn varies depending on the alloy composition. The increase of niobium, tin, and iron content in the zirconium alloy leads to a decrease in the residual ductility of fuel claddings after high-temperature steam oxidation. According to obtained results, among the materials studied, Zr-1.0Nb alloy is the most resistant to embrittlement during high-temperature steam oxidation at temperatures of 1,000-1,200 deg. C. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2024

Self-Assembled TiN-Metal Nanocomposites Integrated on Flexible Mica Substrates towards Flexible Devices

The integration of nanocomposite thin films with combined multifunctionalities on flexible substrates is desired for flexible device design and applications. For example, combined plasmonic and magnetic properties could lead to unique optical switchable magnetic devices and sensors. In this work, a multiphase TiN-Au-Ni nanocomposite system with core–shell-like Au-Ni nanopillars embedded in a TiN matrix has been demonstrated on flexible mica substrates. The three-phase nanocomposite film has been compared with its single metal nanocomposite counterparts, i.e., TiN-Au and TiN-Ni. Magnetic measurement results suggest that both TiN-Au-Ni/mica and TiN-Ni/mica present room-temperature ferromagnetic property. Tunable plasmonic property has been achieved by varying the metallic component of the nanocomposite films. The cyclic bending test was performed to verify the property reliability of the flexible nanocomposite thin films upon bending. This work opens a new path for integrating complex nitride-based nanocomposite designs on mica towards multifunctional flexible nanodevice applications.

42 ENGINEERING↗