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At least 109 records · Page 6

Differential Etv2 threshold requirement for endothelial and erythropoietic development

Endothelial and erythropoietic lineages arise from a common developmental progenitor. Etv2 is a master transcriptional regulator required for the development of both lineages. However, the mechanisms through which Etv2 initiates the gene-regulatory networks (GRNs) for endothelial and erythropoietic specification and how the two GRNs diverge downstream of Etv2 remain incompletely understood. Here, by analyzing a hypomorphic Etv2 mutant, we demonstrate different threshold requirements for initiation of the downstream GRNs for endothelial and erythropoietic development. We show that Etv2 functions directly in a coherent feedforward transcriptional network for vascular endothelial development, and a low level of Etv2 expression is sufficient to induce and sustain the endothelial GRN. In contrast, Etv2 induces the erythropoietic GRN indirectly via activation of Tal1, which requires a significantly higher threshold of Etv2 to initiate and sustain erythropoietic development. These results provide important mechanistic insight into the divergence of the endothelial and erythropoietic lineages.

59 BASIC BIOLOGICAL SCIENCES↗

Induced seismicity red-light thresholds for enhanced geothermal prospects in the Netherlands

Prospects for geothermal energy in the Netherlands have renewed concerns around induced earthquakes. Risks from induced earthquakes are managed by traffic light protocols (TLPs), where the red-light is chosen as the stop-point before exceeding a tolerance to risk. Here, we simulate post-shut-in earthquake scenarios based on realistic information for the Netherlands. We focus on three risk metrics: aggregates like nuisance and damage impacts and also local personal risk (LPR) – a likelihood of building collapse fatality for an individual. Our results show that the severity of these risks varies spatially by orders of magnitude. Prior induced seismicity (e.g., the 2012 Huizinge event) provides a reference baseline to calibrate the Dutch earthquake risk tolerances. We find that these calibrated risk tolerances are similar to those observed in North America, suggesting an underlying sociological ‘license to operate.’ Furthermore, the use of calibrated risk tolerances results in nuisance concerns completely eclipsing the other two metrics. We compare our results to a hypothetical Groningen geothermal operation and find that our approach sets red-light thresholds approximately one magnitude unit below the ML 3.6 Huizinge event. Overall, our results provide a first-order recommendation for red-light thresholds and proactive management of Dutch enhanced geothermal induced seismicity.

15 GEOTHERMAL ENERGY↗

Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors

The Ovonic Threshold Switching (OTS) selector serves as an essential component in the development of three-dimensional high-density memory integration technology. Nevertheless, the state-of-the-art high-performance OTS materials usually contain toxic elements such as arsenic (As), posing significant risks to both environmental and human health. Nitrogen (N), which belongs to the same group as arsenic (As), has emerged as a highly promising alternative for As doping. However, the underlying mechanisms that govern N-based OTS materials have not yet been extensively investigated. In this study, we delve into the effects of N doping on the structural, bonding, and electronic properties of amorphous GeSe (a-GeNSe) by ab initio molecular dynamics simulations to bridge the knowledge gap. Our findings indicate that upon N doping in a-GeSe, the formation of robust Ge-N bonds, along with N-centered tetrahedral and triangular structures, resulting in the sluggish atomic movement that enhances the thermal stability and endurance of a-GeNSe. The OTS characteristics are significantly influenced by the material’s electronic band structure, and thus the relatively slow performance drift can be attributed to the stabilization of mid-gap states, a result of N doping which effectively slows down the aging process of chalcogenide glass. Moreover, the increased mobility gap in a-GeNSe raises the threshold voltage (V th ), making it more compatible with commercially available phase-change memory materials. Furthermore, our findings reveal the extensive impact of the N element on a typical OTS material and offer valuable perspectives for alternative doping strategies that could potentially supplant As practices.

36 MATERIALS SCIENCE↗

Structural damage response of lanthanum and yttrium aluminate crystals to nuclear collisions and electronic excitation: Threshold assessment of irradiation damage

A comparative analysis is performed on the structural damage response and associated mechanisms in lanthanum aluminate and yttrium aluminate crystals under various irradiation conditions by a combination of experimental and theoretical approaches. Under low-energy Au+ irradiation, the damage accumulation curve shows a higher damage rate for LaAlO 3 crystals than YAlO 3 crystals. The relatively low irradiation tolerance of LaAlO 3 to the action of nuclear collisions is ascribed to the large amorphization cross-section and effective cross-section for defect-stimulated amorphization. Under swift Ar 12+ , Ni 19+ and Kr 17+ irradiation with different ion energies and velocities, the formed highly-disordered/amorphous latent tracks with different morphologies in pristine and predamaged crystals are discussed, and the corresponding electronic energy loss and lattice temperature thresholds are quantitatively determined. Compared to YAlO 3 , LaAlO 3 exhibits lower sensitivity and higher damage tolerance to the electronic energy loss process, attributing to its relatively high recrystallization efficiency during the rapid quenching process. Furthermore, the introduction of lattice defects into LaAlO 3 and YAlO 3 crystals considerably enhances the sensitivity and intensity of thermal spike response to the electronic energy loss, and the induced effective modification of track morphologies demonstrates the synergistic effect between the electronic energy loss and pre-existing defects created by nuclear collisions. In this case, even under the action of electronic energy loss below the threshold, the lattice temperature in the nuclear-collision damaged crystalline system could still meet the criterion for track production. The irradiation energy deposited to atoms and induced lattice temperature evolution discussed in this work provide a deeper insight into the complex processes involved in irradiation-induced latent track behaviors.

36 MATERIALS SCIENCE↗

Development of a large-mass, low-threshold detector system with simultaneous measurements of athermal phonons and scintillation light

For this work, we have combined two low-threshold detector technologies to develop a large-mass, low-threshold detector system that simultaneously measures the athermal phonons in a sapphire detector while an adjacent silicon high-voltage detector detects the scintillation light from the sapphire detector. This detector system could provide event-by-event discrimination between electron and nuclear events due to the difference in their scintillation light yield. While such systems with simultaneous phonon and light detection have been demonstrated earlier with smaller detectors, our system is designed to provide a large detector mass with high amplification for the limited scintillation light. Future work will focus on at least an order of magnitude improvement in the light collection efficiency by having a highly reflective detector housing and custom phonon mask design to maximize light collection by the silicon high-voltage detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Zonally dominated dynamics and Dimits threshold in curvature-driven ITG turbulence

The saturated state of turbulence driven by the ion-temperature-gradient instability is investigated using a two-dimensional long-wavelength fluid model that describes the perturbed electrostatic potential and perturbed ion temperature in a magnetic field with constant curvature (a $Z$ -pinch) and an equilibrium temperature gradient. Numerical simulations reveal a well-defined transition between a finite-amplitude saturated state dominated by strong zonal-flow and zonal temperature perturbations, and a blow-up state that fails to saturate on a box-independent scale. We argue that this transition is equivalent to the Dimits transition from a low-transport to a high-transport state seen in gyrokinetic numerical simulations (Dimits et al. , Phys. Plasmas , vol. 7, 2000, 969). A quasi-static staircase-like structure of the temperature gradient intertwined with zonal flows, which have patch-wise constant shear, emerges near the Dimits threshold. The turbulent heat flux in the low-collisionality near-marginal state is dominated by turbulent bursts, triggered by coherent long-lived structures closely resembling those found in gyrokinetic simulations with imposed equilibrium flow shear (van Wyk et al. , J. Plasma Phys. , vol. 82, 2016, 905820609). The breakup of the low-transport Dimits regime is linked to a competition between the two different sources of poloidal momentum in the system – the Reynolds stress and the advection of the diamagnetic flow by the $\boldsymbol {E}\times \boldsymbol {B}$ flow. By analysing the linear ion-temperature-gradient modes, we obtain a semi-analytic model for the Dimits threshold at large collisionality.

Physics↗

Cation-π Bonding in Actinides: UO x + (Benzene) ( x = 0, 1, 2) Complexes Studied with Threshold Photodissociation Spectroscopy and Theory

Cation-π complexes of the form UO x + (benzene) (x = 0, 1, 2) are produced by laser vaporization and cooled in a supersonic molecular beam. These ions are mass selected and studied with UV–visible laser photodissociation spectroscopy. Each of these complexes photodissociates by elimination of the benzene ligand. Above an energetic threshold, the absorption and photodissociation are continuous, indicating a high density of strongly coupled electronic states. The thresholds for the dissociation of each of these three complexes are measured and assigned as their respective bond dissociation energies. The bond energies determined [U + –(benzene): 42.5 ± 0.3 kcal/mol; UO + –(benzene): 41.0 ± 0.3 kcal/mol; UO 2 + –(benzene): 39.7 ± 0.3 kcal/mol] are comparable to those of transition metal ion-benzene complexes. Computational studies at the DFT/B3LYP level complement the experiments, predicting dissociation energies in reasonably good agreement with the experiments. Experiments and theory agree that the U+(benzene) complex is more strongly bound than its corresponding oxide ions. This new thermochemistry on actinide cation-π bonding should stimulate higher-level computational studies on these systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Plasmons Enable Ultralow Threshold Solid-State Triplet Fusion Upconversion with a 2D Sensitizer

Solid-state triplet−triplet annihilation (TTA) upconversion has significant potential for application in light harvesting, optoelectronic devices, and bioimaging. However, the high optical powers required to achieve efficient upconversion have inhibited its adoption. In this work, we demonstrate plasmon-enhanced near-infrared (NIR)-to-blue TTA upconversion in a monolayer WSe2/organic heterojunction. Under far-field excitation, the device reaches a threshold of 19 mW/cm 2 and an external quantum efficiency (EQE) of 0.17% with an anti-Stokes shift of 1.1 eV. Plasmon excitation lowers the threshold to 0.9 mW/cm 2 and improves the EQE to 3.6%. We attribute the plasmon enhancement to surface plasmon polariton (SPP) near-field enhancement and dark-exciton absorption. Optimization of the WSe 2 transfer process is identified as a key factor for the device performance. This work demonstrates that plasmon excitation overcomes the low far-field absorption of 2D transition-metal dichalcogenide (TMD) sensitizers. Consequently, monolayer TMDs can achieve solid-state upconversion with a performance among the best reported.

2D materials↗

Low Threshold Voltages Electrochemically Drive Gold Migration in Halide Perovskite Devices

The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI3 perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI3/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene, MAPbI3 begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI3 thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.

42 ENGINEERING↗

Unveiling mechanisms and onset threshold of humping in high-speed laser welding

The fabrication of fuel cells relies on a rapid laser welding process. However, challenges arise with the occurrence of humping when the welding speed surpasses a critical threshold, which poses difficulties in achieving a smooth surface finish and a consistent weld strength. This study aims to elucidate the humping mechanisms by analyzing the morphology of molten pool and the characteristics of melt flow at varying welding speeds via in situ synchrotron high-speed X-ray imaging and computational fluid dynamics simulations. Our findings indicate that the short keyhole rear wall, the high backward melt velocity, and the prolonged tail of molten pool are the primary factors contributing to the onset of humping. Furthermore, a dimensionless humping index (π h ) was introduced, which successfully captured the onset threshold of humping across different literatures. This index not only provides a quantitative description of the humping formation tendency but also serves as a valuable tool for optimizing the laser welding process.

42 ENGINEERING↗

Benchmarking quantum logic operations relative to thresholds for fault tolerance

Contemporary methods for benchmarking noisy quantum processors typically measure average error rates or process infidelities. However, thresholds for fault-tolerant quantum error correction are given in terms of worst-case error rates—defined via the diamond norm—which can differ from average error rates by orders of magnitude. One method for resolving this discrepancy is to randomize the physical implementation of quantum gates, using techniques like randomized compiling (RC). In this work, we use gate set tomography to perform precision characterization of a set of two-qubit logic gates to study RC on a superconducting quantum processor. We find that, under RC, gate errors are accurately described by a stochastic Pauli noise model without coherent errors, and that spatially correlated coherent errors and non-Markovian errors are strongly suppressed. We further show that the average and worst-case error rates are equal for randomly compiled gates, and measure a maximum worst-case error of 0.0197(3) for our gate set. Our results show that randomized benchmarks are a viable route to both verifying that a quantum processor’s error rates are below a fault-tolerance threshold, and to bounding the failure rates of near-term algorithms, if—and only if—gates are implemented via randomization methods which tailor noise.

97 MATHEMATICS AND COMPUTING↗

Superheating gold beyond the predicted entropy catastrophe threshold

In their landmark study, Fecht and Johnson unveiled a phenomenon that they termed the ‘entropy catastrophe’, a critical point where the entropy of superheated crystals equates to that of their liquid counterparts. This point marks the uppermost stability boundary for solids at temperatures typically around three times their melting point. Despite the theoretical prediction of this ultimate stability threshold, its practical exploration has been prevented by numerous intermediate destabilizing events, colloquially known as a hierarchy of catastrophes, which occur at far lower temperatures. Here we experimentally test this limit under ultrafast heating conditions, directly tracking the lattice temperature by using high-resolution inelastic X-ray scattering. Our gold samples are heated to temperatures over 14 times their melting point while retaining their crystalline structure, far surpassing the predicted threshold and suggesting a substantially higher or potentially no limit for superheating. We point to the inability of our samples to expand on these very short timescales as an important difference from previous estimates. These observations provide insights into the dynamics of melting under extreme conditions.

Laser-produced plasmas↗

Large two-photon cross sections and low-threshold multiphoton lasing of CdS/CdSe/CdS quantum shells

Colloidal quantum shells are spherical semiconductor quantum wells, which have shown strong promise as optical materials, particularly in classes of experiments requiring multiple excitons. The two-photon properties of CdS/CdSe/CdS quantum shell samples are studied here to demonstrate large non-linear absorption cross-sections while retaining advantageous multiexciton physics conferred by the geometrical structure. The quantum shells have large two-phonon cross sections (0.4–7.9 × 10 6 GM), which highlights their potential use in upconversion imaging in which large per particle two-photon absorption is critical. Time-resolved measurements confirmed that the quantum shells have long biexciton lifetime (>10 ns in the largest core samples reported here) and large gain bandwidth (>300 meV). The combination of these attributes with large two-photon cross sections makes the CdS/CdSe/CdS quantum shells excellent gain media for two-photon excitation. With a broad gain bandwidth and long gain lifetime, quantum shell solids support multimodal amplified spontaneous emission from excitons, biexcitons, and higher excited states. In conclusion, thresholds for amplified spontaneous emission and lasing, which are as low as 1 mJ cm −2 , are comparable to, or lower than, the thresholds reported for other colloidal materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Error-Field Penetration Thresholds in Ohmically Heated ITER and SPARC Plasmas

The critical n=1, n=2, and n=3 error-field amplitudes needed to trigger error-field penetration in ITER and SPARC, steady-state, ohmically heated plasmas are calculated using a standard asymptotic matching approach. The calculation incorporates plasma impurities, trapped particles, the bootstrap current, and neoclassical poloidal flow-damping. The energy confinement time is specified by the neo-Alcator scaling law in the low-density linear ohmic confinement (LOC) regime, and by the ITER-89P L-mode scaling law in the high-density saturated ohmic confinement regime (SOC) regime. The response of the plasma in the inner region is calculated using a linearized version of the four-field model. At the normal operating electron number density, diamagnetic levels of rotation are found to be sufficient to protect ITER and SPARC ohmically heated plasmas from m=2/n=1 error-field penetration. On other hand, SPARC, and especially ITER, ohmically heated plasmas may be vulnerable to n>1 error-field penetration. ITER and SPARC ohmically heated plasmas are also slightly more susceptible to error-field penetration when the electron fluid at the rational surface rotates in the ion diamagnetic direction, rather than the electron diamagnetic direction. At electron number densities that are sufficiently low that the plasma lies in the LOC confinement regime, the error-field penetration threshold increases with increasing density. However, as soon as the electron number density becomes large enough that the plasma enters the SOC regime, the increase in the error-field penetration threshold with increasing density levels off.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Resonant Auger decay of dissociating CH 3 I near the I 4d threshold

Resonant Auger processes provide a unique perspective on electronic interactions and excited vibrational and electronic states of molecular ions. Here, new data are presented on the resonant Auger decay of excited CH 3 I in the region just below the I 4d -1 ionization threshold. The resonances include the Rydberg series converging to the five spin–orbit and ligand-field split CH 3 I (I 4d -1 ) thresholds, as well as resonances corresponding to excitation from the I 4d 5/2,3/2 orbitals into the σ* lowest unoccupied molecular orbital. This study focuses on participator decay that populates the lowest lying states of CH 3 I + , in particular, the X̃ 2 E 3/2 and 2 E 1/2 states, and on spectator decay that populates the lowest-lying (CH 3 I 2+ )σ* states of CH 3 I + . The CH 3 I (I 4d -1 )σ* resonances are broad, and dissociation to CH 3 + I competes with the autoionization of the core-excited states. Auger decay as the molecule dissociates produces a photoelectron spectrum with a long progression (up to v 3 + ~ 25) in the C–I stretching mode of the X̃ 2 E 3/2 and 2 E 1/2 states, providing insights into the shape of the dissociative core-excited surface. Further, the observed spectator decay processes indicate that CH 3 I + is formed on the repulsive wall of the lower-lying (CH 3 I 2+ )σ* potentials, and the photon-energy dependence of the processes provides insights into the relative slopes of the (4d -1 )σ* and (CH 3 I 2+ )σ* potential surfaces. Data are also presented for the spectator decay of higher lying CH 3 I (I 4d -1 )nl Rydberg resonances. Photoelectron angular distributions for the resonant Auger processes provide additional information that helps distinguish these processes from the direct ionization signal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low-threshold, single-transverse-mode, 940-nm vertical-cavity surface-emitting laser with a mode filter and half-wavelength cavity

We demonstrate a structure for a vertical-cavity surface-emitting laser (VCSEL) with a mode filter and half-wavelength (λ/2) cavity. The effects of λ/2- and λ-cavities on the threshold current are studied. The thickness and etched diameter of the mode filter are optimised to achieve single-transverse-mode output. The results show that when changing from λ-cavity to λ/2-cavity, the threshold current of the VCSEL decreases by 30.7% (from 0.85 mA to 0.65 mA). In addition, for the mode-filter thickness of 80 nm, and the etched diameter of 2.5 μm, the side mode suppression ratio reaches 90 dB, which meets the requirement of single-transverse-mode output. The VCSELs with the optimised design can overcome many difficulties and have great potential in 3D face recognition. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Inner-shell photoionization of free and confined Mg in the region of the 2p thresholds

In this work, photoionization of the free and confined Mg (Mg@C 60 ) have been calculated in the vicinity of the inner-shell 2p thresholds using R -matrix at the Breit–Pauli R -matrix level with a particular emphasis on the various resonance series leading up to the two lowest inner-shell thresholds and the changes resulting from the confinement. For free Mg, the calculated resonance positions agree well with NIST values, and a number of new resonances are identified. For confined Mg, the calculation was done for various depths of the confining potential well in order to follow the trajectories of the resonances as a function of well depth. The results for the well depth corresponding to Mg@C 60 showed that most of the resonances moved to higher photon energy, as a result of the confinement, but a few moved to lower energies. This phenomenology was found to result from the fact that the 3p, 3d and 4s excitations are trapped by the confining potential well, while the higher excitations were not.

74 ATOMIC AND MOLECULAR PHYSICS↗

Observation of a cross-section enhancement near the production threshold in $\sqrt{s} = 13$ TeV pp collisions with the ATLAS detector

A measurement of $t\bar{t}$ production is presented in the invariant-mass region near the pair production threshold, $m_{t\bar{t}} \sim 345$ GeV, in final states with two charged leptons and multiple jets. The measurement is based on $140\,\mathrm{fb}^{-1}$ of proton–proton collision data collected at $\sqrt{s} = 13$ TeV with the ATLAS detector at the Large Hadron Collider. The data are compared to two models of $t\bar{t}$ production: a baseline model including only perturbative quantum chromodynamics (pQCD) predictions for the hard process at approximate next-to-next-to leading order accuracy in the strong coupling, and an extended model that, in addition, incorporates non-relativistic QCD simulations that also include the formation of colour-singlet quasi-bound-states near the $t\bar{t}$ threshold. The agreement between the data and the models is quantified via a profile-likelihood fit to the reconstructed $m_{t\bar{t}}$ distributions, in bins of two angular observables sensitive to spin-correlations in the $t\bar{t}$ system. An excess of events is observed over the baseline pQCD prediction, with an observed significance over 8 standard deviations. This excess is consistent with the formation of colour-singlet and spin-singlet S-wave quasi-bound $t\bar{t}$ states, as predicted by non-relativistic QCD, and corresponds to an observed cross-section of $9.3^{+1.4}_{-1.3}$ pb.

Large Hadron Collider↗