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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A 20-kW DC Oak Ridge Converter with Integrated AC & DC Sources for Grid Services and Energy Storage Systems

This paper proposes a wireless power transfer (WPT) platform with integrated energy conversion that has the capability for 1) recharging the energy storage systems (ESSs) from the grid systems, including renewable energy sources such as wind, solar, etc., 2) off grid systems recharging the ESSs from dc grid systems, 3) grid recharging of electric vehicles (EVs), and 4) off grid recharging of EVs from ESSs. The unique aspect of the method is the use of multi-interface power electronic converter for the grid and ESSs and EVs that can support a range of applications with ac / dc and dc / dc energy conversion ability in a single converter system. The key enabling technology to achieve these functionalities is Oak Ridge Converter (ORC) with polyphase coupler coil system both developed at ORNL. This new technology enables higher power density WPT systems while allowing the coils to interface from ac grid at 60 Hz frequency or dc source directly merging with 85 kHz operating frequency of switching component. The experimental results of the proposed system are presented for 20 kW output power with the system overall efficiency around 95.4% from dc source and 93% overall efficiency from ac grid achieving 9-10% current total harmonic distortion (THD) and 0.98-0.99 power factor (PF).

Asa, Erdem↗
DOE OSTI2020

LCOE Design Optimization Using Genetic Algorithm with Improved Component Models for Medium-Voltage Transformerless PV Inverters

For real-world installations of photovoltaic and other renewable energy resources, the critical design metric is the levelized cost of energy (LCOE); however, many power electronics design optimizations are performed with efficiency and power density as the primary design goals. Recent work has shown that a new LCOE-focused optimization approach can yield improved system designs balancing cost and energy generation. This paper expands the LCOE optimization approach by considering comprehensive optimization parameters, adding new modeling of inductor cost, extending the semiconductor model to include effects of losses on housing cost, and implementing a genetic algorithm to improve computation efficiency.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
DOE OSTI2022

A Reliable, Cost-Effective Transformerless Medium-Voltage Inverter for Grid Integration of Combined Solar and Energy Storage

The goal of this project is to utilize an innovative holistic power electronic inverter design approach, which can leverage best-in-class silicon carbide (SiC) power modules, novel multi-level power electronic circuits, high frequency transformers, switching sequence based control and co-designed electro-thermal management methods, to realize a 300 kW transformerless medium-voltage (MV) inverter system. The system cost of the inverter is considered as a primary design objective alongside high power density, efficiency, low electromagnetic interference (EMI) and long lifespan. This design-oriented research activity, especially the proposed multi-objective optimization approach, will have broad impacts in holistic power electronic system design methods and in technologies that can be commercialized into a wide variety of wide bandgap power electronic applications.

14 SOLAR ENERGY↗
DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Omega-Limit Sets and Input-To-State Stability in Power Grids with Switching Equilibria

This paper studies a power transmission system with both conventional generators (CGs) and distributed energy assets (DEAs) providing frequency control. We consider an operating condition with demand aggregating two dynamic components: one that switches between different values on a finite set, and one that varies smoothly over time. Such dynamic operating conditions may result from protection scheme activations, external cyber-attacks, or due to the integration of dynamic loads, such as data centers. Mathematically, the dynamics of the resulting system are captured by a system that switches between a finite number of vector fields - or modes -, with each mode having a distinct equilibrium point induced by the demand aggregation. To analyze the stability properties of the resulting switching system, we leverage tools from hybrid dynamic inclusions and the concept of ..omega.. -limit sets from sets. Specifically, we characterize a compact set that is semi-globally practically asymptotically stable under the assumption that the switching frequency and load variation rate are sufficiently slow. For arbitrarily fast variations of the load, we use a level-set argument with multiple Lyapunov functions to establish input-to-state stability of a larger set and with respect to the rate of change of the loads. The theoretical results are illustrated via numerical simulations on the IEEE 39-bus test system.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

A Control Scheme to Mitigate the Dead-Time Effects in a Wireless Power Transfer System

In practice, a dead-time is always provided between the complementary switching instances of the inverter phase-leg devices. At higher operating frequencies, the dead-time issues in wireless power transfer (WPT) systems become critical, especially as the power level increases. In certain operating conditions, the dead-time effect in wireless power transfer system affects the switching characteristics. Consequently, the switching losses in the power semiconductor devices increase and also impact the efficiency of the overall system. In this paper, a simple control scheme is proposed to eliminate the dead-time effect (or voltage polarity reversal) in the WPT inverter. The proposed control scheme monitors the inverter output voltage, and the switching frequency is auto-tuned to eliminate the undesired switching instances in the inverter voltage. The proposed control scheme is validated using the closed-loop simulations in PLECS, and the experimental results on a 5.6 kW WPT prototype are also presented. After eliminating the voltage-polarity-reversal at the inverter output, the inverter losses were reduced by ~40%, and the overall system losses were reduced by ~17%.

Kavimandan, Utkarsh↗
DOE OSTI2021

Soft-switching, high performance single-phase AC-DC converter

A soft-switching, high-performance single-phase alternating current (AC)-direct current (DC) converter is provided. The AC-DC converter described herein provides a new circuit topology for single-stage, single-phase or multi-phase AC-DC power conversion with power factor correction (PFC) and galvanic isolation using a high-frequency isolation transformer. The AC-DC converter improves power conversion efficiency and power density—two of the most important metrics for a power converter. It achieves soft switching for high frequency switches in the circuit, leading to higher efficiency and lower electromagnetic interference (EMI).

Ayyanar, Rajapandian↗
DOE OSTI2023

Switch leakage mitigation through differential cancellation

High speed analog-to-digital converters (ADC), switched-capacitor delay elements, and pulsed radio frequency (RF) systems all require switches in the signal path operating at high switching speeds, providing low resistance when enabled, and providing high signal isolation when disabled. In semiconductor technologies such as CMOS, the enabled state resistance directly scales with the sizing of the switch device, where a larger width switch provides a lower enabled state resistance. As the device width is increased, so is the capacitance formed between the gate, drain, and source of the device.

42 ENGINEERING↗
DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2023

Mitigating dust particle contamination in an afterglow plasma by controlled lifting with a DC electric field

Abstract Particle contamination due to plasma processing motivates the design of a method of electrically lifting particles in a time interval after a plasma’s power is turned off. Small solid dust particles have electric charges that are not frozen until a late stage of the plasma afterglow. Beyond that time, before they fall to a surface below and cause defects, particles can be lifted in a controlled manner by applying an appropriate direct-current (DC) electric field, as we demonstrate experimentally. A few milliseconds after an argon plasma’s capacitively coupled radio-frequency power is switched off, a vertical DC electric field is applied. Thereafter, video imaging shows that the falling of the particles is slowed or stopped altogether, depending on the magnitude of the upward electric force.

Physics↗
DOE OSTI2020

Performance Evaluation of Three RTU Energy Efficiency Technologies

This project was part of an effort by CLEAResult and ComEd to evaluate the energy saving potential of emerging technologies in the Chicago area. This project focused on evaluating emerging technologies related to rooftop units (RTUs). An RTU with a single-stage compressor and a constant-speed fan with an induction motor was selected as the baseline for technology comparison. Three retrofit strategies were investigated. The first two involved replacing the single-stage compressor of an RTU by either a two-stage or variable-speed compressor and adding a variable frequency drive (VFD) to the constant speed fan. The use of a multi-/variable-stage compressor improves the part-load efficiency of the compressor which will ultimately result in annual energy savings as well as peak demand shaving in some cases where the design capacity of the RTU is larger than the maximum cooling load of the building space that it is serving. The third technology was the use of a high rotor pole switched reluctance motor (SRM) as a replacement for the constant-speed supply fan. The SRM was applied in single-speed, two-stage and variable-speed compressor RTUs. SRM motors run via reluctance torque. Their stator poles are driven by direct current (DC) power and require an inverter as well as active control when using alternating current (AC) power. This inherent property results in high efficiency over a range of operating conditions. It also exhibits higher efficiency compared to variable frequency drives (VFDs) since its switching frequency is much slower (SCE, 2018).The three technologies investigated are summarized below: 1) Replacing the single-speed compressor with a two-stage compressor and adding a VFD to the supply fan. 2)Replacing the single-speed compressor with a variable-speed compressor and adding a VFD to the supply fan. 3) Replacing the constant-speed induction motor of the supply fan with a high rotor pole SRM. DOE’s building simulation platform EnergyPlus and its graphical user interface OpenStudio were used to evaluate the energy-saving potential of upgrading RTUs, by leveraging experimental data from previous research.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2025

Electron density profile and associated fluctuation measurements using a microwave reflectometry diagnostic on Helically Symmetric eXperiment (HSX)

Abstract A dual-band frequency-modulated reflectometry is employed on the Helically Symmetric eXperiment (HSX) stellarator. This system equips a fast PIN switch to alternate the frequency source between two voltage-controlled oscillators, providing an operational frequency range from 14.5 GHz to 25.5 GHz. A monostatic antenna geometry and an ellipsoidal mirror are implemented in the vessel of HSX, where the polarization of the transmitted microwave can be switched between O- and X-mode to accommodate the magnetic field and plasma density. Although the original system was designed for density fluctuation measurement, significant efforts have been undertaken to improve the system performance and to realize the density profile inversion. Recent improvements of the system reported here include calibration of the dispersion in the transmission line, optimization of the waveform, and implementation of the Choi-Williams time–frequency distribution for spectral analysis. In this paper, we present the optimization of the reflectometry system along with first experimental measurements of the density profile and observations of fluctuations during gas puffing experiments.

Han, X. (ORCID:0000000184986433)↗
DOE OSTI2021

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

Abstract Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of indium tin oxide (ITO). Exciting this mode using the Kretschmann-Raether configuration, we study reflection switching properties of a 60 nm layer close to the resonant plasmon frequency. We demonstrate a thermal switching mechanism, which results in a shift in the plasmon resonance frequency of 20 THz for a TM pump intensity of 70 GW cm −2 . For degenerate pump and probe frequencies, we highlight an additional two-beam coupling contribution, not previously isolated in ENZ nonlinear optics studies, which leads to an overall pump induced change in reflection from 1% to 45%.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Design and Optimization of High-frequency Transformer for Isolated Single-Stage Three-Phase AC/DC Converter using Bidirectional Switches

This paper presents the design and optimization of the high-frequency transformer for an isolated single-stage threephase AC/DC converter enabled by the 4H-SiC BiDirectional Field Effect Transistor (BiDFET). Non-dominated Sorting Genetic Algorithm II (NSGA-II) is used to perform a multiobjective optimization to minimize loss, weight, and volume. A 20 kW, 50 kHz hardware prototype based on the selected optimal point is characterized by a power amplifier. The finite element analysis simulation results are also presented to validate the core magnetic flux density and winding electric field strength. The experimental prototype was tested at 800 Vdc/480 Vrms at 10 kW rated power.

BiDFET, High-frequency transformer, Multiobjective↗