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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Attaching of strain gages to substrates

A method and apparatus for attaching strain gages to substrates is described. A strain gage having a backing plate is attached to a substrate by using a foil of brazing material between the backing plate and substrate. A pair of electrodes that are connected to a current source, are applied to opposite sides of the backing plate, so that heating of the structure occurs primarily along the relatively highly conductive foil of brazing material. Field installations are facilitated by utilizing a backing plate with wings extending at an upward incline from either side of the backing plate, by attaching the electrodes to the wings to perform the brazing operation, and by breaking off the wings after the brazing is completed.

Lemcoe, M. M.↗
NASA NTRS1979

Study of composites as substrate materials in large space telescopes

Nonmetallic composites such as the graphite/epoxy system were investigated as possible substrates for the primary mirror of the large space telescope. The possible use of fiber reinforced metal matrix composites was reviewed in the literature. Problems arising out of the use of composites as substrate materials such as grinding, polishing, adherence of reflective coatings, rigidity of substrate, hygrospcopici tendency of the composites, thermal and temporal stability and other related problems were examined.

Sharma, A. V.↗
NASA NTRS1979

Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.

Jastrzebski, L.↗
NASA NTRS1980

Investigation into the effect of plasma pretreatment on the adhesion of parylene to various substrates

An experimental effort has been undertaken to examine the effect of plasma pretreatment of various substrate materials coated with a polymer in the parylene family. This report describes the procedure and discusses initial data which indicate using plasmas of argon and oxygen to promote adhesion of parylene coatings upon many difficult-to-bond substrates. Substrates investigated were gold, nickel, kovar, teflon (FEP), kapton, silicon, tantalum, titanium, and tungsten. Without plasma treatment, 180 deg peel tests yield a few g/cm (oz/in) strengths. With dc plasma treatment in the deposition chamber, followed by coating, peel strengths are increased by one to two orders of magnitude.

Riley, T.↗
NASA NTRS1981

Investigation into the role of NaCL deposited on oxide and metal substrates in the initiation of hot corrosion

The conversion to Na2SO4 of NaCl deposited on oxide substrates was studied as a function of temperature, in air with various SO2 and H2O partial pressures. The substrate was either a pure oxide or an oxide scale growing on a metal specimen. The progress of the reaction was observed using the SEM-EDAX technique to monitor morphological effects and, as far as possible, establish the rate of the process. The physical characteristics of the interaction between salt and substrate were also examined with particular reference to physical damage to the underlying oxide, especially when this is a scale on a metal specimen. An effort was also made to establish the conditions under which liquid phases may form and the mechanisms by which they form.

Birks, N.↗
NASA NTRS1980

Empirical study of the interaction of silicon substrate thinness, device design, and solar cell processing

Processing experiments using wire-saw techniques to slice thin silicon wafers are described. Substrates were sliced directly to 17 mil, 8 mil, and 5 mil thicknesses. Some of the 8 mil substrates and all of the 5 mil substrates were chemically etched to 7 and 4 mils, respectively, to guarantee removal of any saw damage. The wafers wire sawed to 17 mil thicknesses were processed as reference cells. A baseline process which results in an n(+)-p cell structure, and two advanced processes which provide n(+)-p-p(+) structures were utilized. By using a p(+) enhancement layer on the solar cell back surface, the performance of the 7 mil wafers was increased to exceed that of the 17 mil solar cells with simple n(+)-p structures. Cells fabricated by an ion implantation sequence utilizing elemental boron and phosphorus implants were shown to be capable of equalling or exceeding the performance of cells fabricated by an equivalent all-diffusion process.

Pryor, R. A.↗
NASA NTRS1981

Role of substrate quality on IC performance and yields

The development of silicon and gallium arsenide crystal growth for the production of large diameter substrates are discussed. Large area substrates of significantly improved compositional purity, dopant distribution and structural perfection on a microscopic as well as macroscopic scale are important requirements. The exploratory use of magnetic fields to suppress convection effects in Czochralski crystal growth is addressed. The growth of large crystals in space appears impractical at present however the efforts to improve substrate quality could benefit from the experiences gained in smaller scale growth experiments conducted in the zero gravity environment of space.

Thomas, R. N.↗
NASA NTRS1981

Large-area silicon-on-ceramic substrates for low-cost solar cells

The SCIM (Silicon-Coating-By-Inverted Meniscus) process to produce SOC (silicon-on-ceramic) substrates has been investigated for various growth conditions and substrate velocities (4-30 cm/min). Slotted mullite-based substrates (10-cm-wide by 100-cm-long) have been coated with smooth, continuous silicon layers, with thicknesses in the range from 100 to 300 microns. Thermal stress (which can be a problem at low velocities) is prevented by proper thermal design. The highest SCIM-coated SOC cell efficiencies to date are 7.5% (AM1, AR) as compared to 10.5% (AM1, AR) for dip-coated SOC cells. Substantial improvements in cell efficiency are expected when high purity parts are installed in the SCIM-coater.

Schuldt, S. B.↗
NASA NTRS1982

Densification of porous refractory substrates

A hydrolyzed tetraethyl orthosilicate is applied to the surface of a porous refractory substrate following which the substrate is heated to a temperature and for a period of time sufficient to bond the silica released from the tetraethyl orthosilicate to the substrate. The surface is thus densified and strengthened.

Ecord, G. M.↗
NASA NTRS1982

Holographic fabrication of gratings in metal substrates

A program for investigating the grain enlargement resulting from the laser recrystallization of a thin gallium arsenide film on a patterned substrate, a technique known as graphoepitaxy was evaluated. More specifically, the effects of recrystallizing an uncapped gallium arsenide film using a continuous wave neodymium YAG laser operating at 1.06 microns were studied. In an effort to minimize arsenic loss from the film, the specimens were held in an arsine atmosphere during recrystallization. Two methods for fabricating patterned substrates were developed, one using reactive ion etching of a molybdenum film on both sapphire and silicon substates and another by preferential wet etching of a silicon substrate onto which a film of molybdenum was subsequently deposited.

Fletcher, R. M.↗
NASA NTRS1982

Microbial ecology of extreme environments: Antarctic dry valley yeasts and growth in substrate-limited habitats

The success of the Antarctic Dry Valley yeasts presumeably results from adaptations to multiple stresses, to low temperatures and substrate-limitation as well as prolonged resting periods enforced by low water availability. Previous investigations have suggested that the crucial stress is substrate limitation. Specific adaptations may be pinpointed by comparing the physiology of the Cryptococcus vishniacii complex, the yeasts of the Tyrol Valley, with their congeners from other habitats. Progress was made in methods of isolation and definition of ecological niches, in the design of experiments in competition for limited substrate, and in establishing the relationships of the Cryptococcus vishniacii complex with other yeasts. In the course of investigating relationships, a new method for 25SrRNA homology was developed. For the first time it appears that 25SrRNA homology may reflect parallel or convergent evolution.

Vishniac, H. S.↗
NASA NTRS1983

Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

Vasquez, R. P.↗
NASA NTRS1983

Investigation into the role of sodium chloride deposited on oxide and metal substrates in the initiation of hot corrosion

Sodium chloride is deposited on the surface of alumina substrates and exposed to air containing 1% SO2 at temperatures between 500 C and 700 C. In all cases the sodium chloride was converted to sodium sulfate. The volatilization of sodium chloride from the original salt particles was responsible for the development of a uniform coating of sodium sulfate on the alumina substrate. At temperatures above 625 C, a liquid NaCl-Na2SO4 autectic was formed on the substrate. The mechanisms for these reactions are given. One of the main roles of NaCl in low temperature hot corrosion lies in enabling a corrosive liquid to form.

Birks, N.↗
NASA NTRS1984

Photodeposition of Nitride Insulators on 3-5 Substrates

Laser assisted chemical vapor deposition (LCVD) of nitride insulators, using an excimer laser operating on either KrF or ArF transitions (248 nm or 193 nm respectively) was explored. The properties of silicon nitride films Deposited with 193 nm photons on quartz and silicon substrates in a SiH4, NH3, N2 and He mixture are discussed. Aluminum films were deposited at substrate temperatures from room temperature to 200 C using 248 nm or 193 nm photons to dissociate trimethylaluminum (TMA). Deposition of Al films were investigated to isolate problems associated with TMA such as C and O contamination during AlN depositions. The Al film properties were evaluated on SiO2 and Si substrates. Preliminary results were obtained for aluminum nitride films using TMA and NH3 as the gas phase Al and N donors. The properties of Cr films deposited over areas 5 square cm using 193 nm or 248 nm photons to dissociate Cr(CO) were investigated.

Collins, G. J.↗
NASA NTRS1985

Effects of MAR-M247 substrate (modified) composition on coating oxidation coating/substrate interdiffusion

The effects of gamma+gamma' Mar-M247 substrate composition on gamma+beta Ni-Cr-Al-Zr coating oxidation and coating/substrate interdiffusion were evaluated. These results were also compared to a prior study for a Ni-Cr-Al-Zr coated gamma Ni-Cr-Al substrate with equivalent Al and Cr atomic percentages. Cyclic oxidation behavior at 1130 C was investigated using change in weight curves. Concentration/distance profiles were measured for Al, Cr, Co, W, and Ta. The surface oxides were examined by X-ray diffraction and scanning electron microscopy. The results indicate that variations of Ta and C concentrations in the substrate do not affect oxidation resistance, while additions of grain boundary strengthening elements (Zr, Hf, B) increase oxidation resistance. In addition, the results indicate that oxidation phenomena in gamma+beta/gamma+gamma' Mar-M247 systems have similar characteristics to the l gamma+beta/gamma Ni-Cr-Al system.

Pilsner, B. H.↗
NASA NTRS1986

A computer program to calculate the resistivity of a thin film deposited on a conductive substrate from four-point probe measurements

A series of FORTRAN-77 programs is described which correct for the effect of a conducting substrate when a linear four-point probe is used to measure the resistivity of a thin film. The resistivity of the film is given in terms of the thicknesses of the film and substrate, the known resistivity of the substrate, and the measured delta V/I. A full development is given as well as a complete description of the operation of the programs. The programs themselves can be obtained through COSMIC, and are identified as LEW No. 14381.

Oberle, L. G.↗
NASA NTRS1986

Analysis of substrate and plant spectral features of semi-arid shrub communities in the Owens Valley, California

Airborne Imaging Spectrometer (AIS) data were analyzed to deduce plant density and species composition in three semi-arid shrub-dominated communities of Owens Valley, CA, occurring on either a sand, granite alluvium, or basalt substrate. The high-spectral resolution AIS data were related to spectra obtained with field portable spectrometers, which in turn were related to plant and soil characteristics of the communities. Many of the dominant species have unique spectral features which permit their identification in AIS pixel images. The canopy-induced shadow may be a major factor influencing substrate spectral properties during fall and winter, because of low sun angles. Moreover, changes in spectral signatures following dormancy and leaf senescence tend to decrease contrasts between the plant community and the geologic substrate, also suggesting that fall and winter are a difficult time of year for spectral analyses.

Ustin, S. L.↗
NASA NTRS1988

Substrates For High-Temperature Superconductors

Proposed hot-dipping process prepares materials well suited to serve as substrates for high-temperature superconductors. Makes it possible to produce substrates combining properties needed for given application, such as flexibility, strength, long grains, and <001> crystal orientation. Properties favor growth of superconductive films carrying high current and fabricated in variety of useful shapes. Used in making solar cells, described in "Hot-Dipped Metal Films as Epitaxial Substrates" (NPO-15904).

Shlichta, Paul J.↗