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At least 109 records · Page 6

A 250 GHz planar low noise Schottky receiver

A planar quasi-optical Schottky receiver based on the quasi-integrated horn antenna has been developed and tested over the 230-280 GHz bandwidth. The receiver consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended on a thin dielectric membrane in an etched-pyramidal horn cavity. The diode has a 1.21 micron anode diameter and a low parasitic capacitance due to the use of an etched surface channel. The antenna-mixer results in a measured DSB conversion loss and noise temperature at 258 GHz of 7.2 dB +/- 0.5 dB and 1310 K +/- 70 K, respectively, at room temperature. The design is compatible with SIS mixers, and the low cost of fabrication and simplicity makes it ideal for submillimeter-wave imaging arrays requiring a 10-20 percent bandwidth.

Ali-Ahmad, Walid Y.↗

An 86-106 GHz quasi-integrated low noise Schottky receiver

An integrated planar receiver was developed and tested over the 82-112 GHz bandwidth. The quasi-integrated antenna used in the receiver has a high gain, a high Gaussian coupling efficiency, and a wide bandwidth. The novel mixer design consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended inside an integrated horn antenna. The diode uses an etched surface channel and a planar air bridge for reduced parasitic capacitance. At 92 GHz, the room-temperature antenna-mixer exhibits a double sideband conversion loss and noise temperature of 5.5 +/- 0.5 dB and 770 K +/- 50 K, respectively. The measured DSB conversion loss and noise temperature over a 20 GHz bandwidth (86 GHz-106 GHz) remain less than 6.2 dB +/- 0.5 dB and 1000 K +/- 50 K, respectively. The low cost of fabrication and simplicity of the design makes it ideal for millimeter- and submillimeter-wave receivers.

Ali-Ahmad, Walid Y.↗

A wide-band 760-GHz planar integrated Schottky receiver

A wideband planar integrated heterodyne receiver has been developed for use at submillimeter-wave to FIR frequencies. The receiver consists of a log-periodic antenna integrated with a planar 0.8-micron GaAs Schottky diode. The monolithic receiver is placed on a silicon lens and has a measured room temperature double side-band conversion loss and noise temperature of 14.9 +/- 1.0 dB and 8900 +/- 500 K, respectively, at 761 GHz. These results represent the best performance to date for room temperature integrated receivers at this frequency.

Gearhart, Steven S.↗

Radio, millimeter-submillimeter, and infrared spectra of flat-spectrum extragalactic radio sources

We present radio to submillimeter-wave continuum spectra of 44 bright, compact extragalactic radio sources with flat spectra at centimeter wavelengths ('blazars'). Infrared J, H, and K flux densities are added to the spectra of six of these objects. These spectra are useful in comparisons of x-ray and gamma-ray measurements with the multiwaveband properties of blazars. A number of the objects have been detected as strong, hard gamma-ray sources by the Compton Gamma Ray Observatory (CGRO). The millimeter-wave spectra of the gamma-ray bright blazars we observe are flatter on average than for the sample as a whole.

Bloom, Steven D.↗

Antisymmetric Layup Of Precise Composite Laminates

Warping of precise composite-material (graphite-fiber/epoxy-matrix) laminated panels reduced, according to proposal, by improved combination of design and method of fabrication. Essence of proposal to stack plies during fabrication in such pattern that effects of unavoidable ply-orientation errors in individual layers cancel each other out, on whole, in final product. Emerged from study of warping of composite-material laminated face sheets undergoing development for use as lightweight substrates for precise, curved mirrors in submillimeter-wave astronomical telescopes and optical communication systems.

Rapp, Donald↗

Very High Current Density Nb/AlN/Nb Tunnel Junctions for Low-Noise Submillimeter Mixers

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.

Kawamura, Jonathan↗

Micromachined TWTs for THz Radiation Sources

The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.

Booske, John H.↗

A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

Bruston, J.↗

Retrieve Optically Thick Ice Cloud Microphysical Properties by Using Airborne Dual-Wavelength Radar Measurements

An algorithm to retrieve optically thick ice cloud microphysical property profiles is developed by using the GSFC 9.6 GHz ER-2 Doppler Radar (EDOP) and the 94 GHz Cloud Radar System (CRS) measurements aboard the high-altitude ER-2 aircraft. In situ size distribution and total water content data from the CRYSTAL-FACE field campaign are used for the algorithm development. To reduce uncertainty in calculated radar reflectivity factors (Ze) at these wavelengths, coincident radar measurements and size distribution data are used to guide the selection of mass-length relationships and to deal with the density and non-spherical effects of ice crystals on the Ze calculations. The algorithm is able to retrieve microphysical property profiles of optically thick ice clouds, such as, deep convective and anvil clouds, which are very challenging for single frequency radar and lidar. Examples of retrieved microphysical properties for a deep convective clouds are presented, which show that EDOP and CRS measurements provide rich information to study cloud structure and evolution. Good agreement between IWPs derived from an independent submillimeter-wave radiometer, CoSSIR, and dual-wavelength radar measurements indicates accuracy of the IWC retrieved from the two-frequency radar algorithm.

Wang, Zhien↗

A Planar Dielectric-Filled-Parabolic-Feed Frequency Multiplier

In this paper, we present a novel quasi-optical all-planar frequency doubler that could provide an alternative approach to conventional waveguide circuits for millimeter- and submillimeter-wave signal generation. By utilizing a quad-bridge-diode configuration, we are able to isolate the input and the output circuits without the use of complicated filter structures.

frequency doubler waveguide circuits signal genera↗

The Application of the FDTD Method to Millimeter-Wave Filter Circuits Including the Design and Analysis of a Compact Coplanar

The finite difference time domain (FDTD) method is applied to the analysis of microwave, millimeter-wave and submillimeter-wave filter circuits. In each case, the validity of this method is confirmed by comparison with measured data. In addition, the FDTD calculations are used to design a new ultra-thin coplanar-strip filter for feeding a THz planar-antenna mixer.

Millimeter-wave filter Coplanar-Strip filter↗

NASA Tech Briefs, January 2001

The topics include: 1) A "Model" of Interactive Engineering; 2) Feature Section: Communications Technology; 3) lnReview; 4) Application Briefs; 5) Submillimeter-Wave Image Sensor; 6) Ultrasonic/Sonic Drill/Corers With Integrated Sensors; 7) Normally Closed, Piezoelectrically Actuated Microvalve; 8) Magnetostrictively Actuated Valves for Cryosurgical Probes; 9) Remote Sensing of Electric Fields in Clouds; 10) Wireless-Communication Headset Subsystem To Enhance Signaling; 11) Power Amplifier With 9 to 13 dB of Gain From 65 to 146 GHz; 12) Humidity Interlock for Protecting a Cooled Laser Crystal; 13) A Lightweight Ambulatory Physiological Monitoring System; 14) Improvements in a Lightning-Measuring Instrument; 15) Broad-Band, Noninvasive Radio-Frequency Current Probe; 16) Web-Based Technology Distributes Lean Models; 17) Software Guides Aeroelastic-Systems Design; and 18) Postprocessing Software for Micromechanics Analysis Code. A Photonics West 2001 Preview Tech Brief supplement to this January 2001 issue is also included.

Source record↗

Fabrication and Performance of Planar Schottky Diodes with T-gate-like Anodes in 200 GHz Subharmonically-Pumped Waveguide Mixers

A T-gate-like structure has been developed, fabricated and tested as the anode for millimeter and submillimeter-wave Schottky diodes. The low parasitics of the T-anode diodes yield extremely high cutoff frequencies, making the diodes useable at frequencies well beyond 1 THz. The diodes were tested as an antiparallel-pair, integrated monolithically with microstrip circuitry on a quartz substrate, in a subharmonically pumped waveguide mixer. A double sideband noise temperature of 600 K with a conversion loss of 4.7 dB were measured at 200 GHz. This is believed to be the lowest noise temperature ever reported for a room temperature subharmonically-pumped Schottky diode mixer at this frequency.

Planar↗