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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

FCC feasibility studies: Impact of tracker- and calorimeter-detector performance on jet flavor identification and Higgs physics analyses

The ambitious physics program planned for the Future Circular Collider electron-positron phase imposes stringent constraints on detector performance. This study systematically investigates how different detector configurations impact jet flavor identification and their effects on high-profile physics analyses. Using Higgs boson coupling measurements and searches for invisible Higgs decays as benchmarks, we evaluate the sensitivity of these analyses to variations in tracker and calorimeter detector properties. We examine modifications to single-point resolution, material budget, silicon layer placement, and particle identification capabilities, quantifying their effects on flavor-tagging performance. Additionally, we present the first comprehensive study of Higgs-to-invisible decay detection using full detector simulation, providing insights for optimizing detector designs at lepton colliders.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
DOE OSTI2020

Early Career: Mesoscale Fragments of Crystalline Silicon by Chemical Synthesis (Final Technical Report)

Silicon has transformed the modern era, with applications in computing, solar cells, energy storage, and beyond. The traditional approach to making silicon is a high-temperature “top-down” process that affords only the most stable form of silicon, leaving hidden vast swathes of structure-function space. The goal of this program was to establish new approaches to making silicon-based materials from the bottom-up, allowing structural precision from the atomic level up to the bulk, and to understand how structure influences function. Key results included the development of the cyclosilane building blocks and low-temperature methods for their polymerization, as well as new tools for spectroscopic characterization. In addition to revealing new materials chemistry insights, in the five-year period covered by this award, this work resulted in 11 publications and three graduate student theses.

36 MATERIALS SCIENCE↗
DOE OSTI2024

One-Step Spark Plasma Erosion Processing of Carbon-Coated Sn-Si Nanoparticles for Lithium-Ion Battery Anodes

High density portable energy storage is desirable owing to the energy requirements of portable electronics and electric vehicles. The Li-ion battery’s high energy density could be even further improved through the utilization of alternative materials (instead of carbon) for the anode, such as Sn or Si. Nonetheless, the large volume expansion upon lithiation, up to ~300% for Li 22 Si 5 , causes pulverization and rapid capacity degradation during cycling. Sn also forms a Li 22 Sn 5 compound with the equivalent stoichiometric Li capacity but with enhanced ductility. Nano-sized Si and Sn have demonstrated distinctive nanoscale properties, facilitating the retention of higher capacities, particularly when coated with carbon, which improves mechanical stability. To date, the methods of synthesizing coated Si, Sn, or Si-Sn alloyed nanoparticles are complicated, costly, and not readily scalable to meet the demands of cost-effective manufacturing. Spark plasma erosion in a hydrocarbon dielectric has been explored as a one-step process to produce Sn-Si alloy nanoparticles coated with a thin carbon film, offering a scalable and cost-effective processing route. The resulting Sn-Si particles exhibited a bi-modal size distribution at ~5 nm and ~500 nm and were carbon-coated, as intended, from the hydrocarbon dielectric breakdown. The spark-eroded nanoparticles were thoroughly characterized using TEM/EDS, XPS, AES, SSNMR, and TGA, and their improved electrochemical performance was assessed through half-cell experiments.

25 ENERGY STORAGE↗
DOE OSTI2021

Silicon sealing for high performance battery anode materials

A battery electrode is provided that includes a porous silicon microstructure precursor, a silicon shell coating deposited on the silicon microstructure precursor, and a graphene coating deposited on the silicon shell coating, where the graphene coating encapsulates the silicon shell coating forming a graphene-encapsulated silicon-shell-protected porous silicon microstructure precursor battery electrode.

Cui, Yi↗
DOE OSTI2024

DoD Symposium Presentation

TRISO fuel, or TRi-structural ISOtropic, is a ceramic based nuclear fuel capable of operating at high temperatures (up to 1600°C). The fuel, consisting of uranium oxycarbide (UCO) fuel kernels, is coated with three layers of carbon and ceramic (dense silicon carbide) materials to capture and contain radioactive fission products. BWXT, located in Lynchburg, VA, has perfected the manufacturing techniques to produce this fuel and is currently the only US company licensed to produce this irradiation-tested fuel. BWXT is currently producing fuel in support of a demonstration reactor scheduled for startup on the INL site in 2025. The first fuel delivery, estimated at 200 kilograms High Assay Low Enriched Uranium, is targeted for the end of CY2024.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2021

A Circularity Assessment for Silicon Solar Panels Based on Dynamic Material Flow Analysis

Solar photovoltaics (PV) are the fastest growing renewable energy technology for clean, inexpensive, and sustainable electricity generation. Along with numerous technical roadmaps to improve system cost, performance and reliability, the PV industry should also plan to handle large volumes of silicon panel waste, which is initially estimated to be ~13 million metric tons (MT) by 2050 in the U.S. alone. Understanding the magnitude of material needs and how material flows throughout the PV panel life cycle could respond to design, operational and different end-of-life (EOL) circular pathways will help transition into a circular, resource-conserving economy. Herein, we introduce a dynamic material flow analysis (DMFA) framework based on electricity generation to quantify time-series stocks and flows of bulk PV materials (e.g., solar glass and aluminum frames) throughout the life cycles of utility-scale silicon PV systems in the U.S. in the period 2000-2100. We apply the model to a range of scenarios to understand how material demands depend on selected PV-related parameters, different material circularity strategies, and recent module design trends (e.g., bifacial, frameless). We found that float glass and aluminum in PV installations would likely reach 100 million MT and 12 million MT by 2100, respectively, in the baseline scenario. The most influential parameters for PV installation and subsequent waste reduction are found to be module lifetime, module efficiency, annual degradation, and material reduction. Module recycling and component remanufacturing were found to be the most effective material circularity strategies for waste minimization. Panel reuse has negligible savings on waste under current module efficiencies compared to replacements with newer generations with higher efficiency. Ongoing trends to produce larger power frameless modules could save 10 million MT of glass and ~9 million MT of aluminum. Our results enable advanced planning for future materials needs and provide insight into potential opportunities to minimize waste.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

A Circularity Assessment for Silicon Solar Panels Based on Dynamic Material Flow Analysis: Preprint

Solar photovoltaics (PV) are the fastest growing renewable energy technology for clean, inexpensive, and sustainable electricity generation. Along with numerous technical roadmaps to improve system cost, performance and reliability, the PV industry should also plan to handle large volumes of silicon panel waste, which is initially estimated to be ~13 million metric tons (MT) by 2050 in the U.S. alone. Understanding the magnitude of material needs and how material flows throughout the PV panel life cycle could respond to design, operational and different end-of-life (EOL) circular pathways will help transition into a circular, resource-conserving economy. Herein, we introduce a dynamic material flow analysis (DMFA) framework based on electricity generation to quantify time-series stocks and flows of bulk PV materials (e.g., solar glass and aluminum frames) throughout the life cycles of utility-scale silicon PV systems in the U.S. in the period 2000-2100. We apply the model to a range of scenarios to understand how material demands depend on selected PV-related parameters, different material circularity strategies, and recent module design trends (e.g., bifacial, frameless). We found that float glass and aluminum in PV installations would likely reach 100 million MT and 12 million MT by 2100, respectively, in the baseline scenario. The most influential parameters for PV installation and subsequent waste reduction are found to be module lifetime, module efficiency, annual degradation, and material reduction. Module recycling and component remanufacturing were found to be the most effective material circularity strategies for waste minimization. Panel reuse has negligible savings on waste under current module efficiencies compared to replacements with newer generations with higher efficiency. Ongoing trends to produce larger power frameless modules could save 10 million MT of glass and ~9 million MT of aluminum. Our results enable advanced planning for future materials needs and provide insight into potential opportunities to minimize waste.

circular economy↗
DOE OSTI2020

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile memories. As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides—the archetypal ferroelectric system. Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes. In this paper we report ferroelectricity in ultrathin doped hafnium oxide (HfO 2 ), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which ‘reverse’ size effects counterintuitively stabilize polar symmetry in the ultrathin regime.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗
DOE OSTI2024

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Different Damp-Heat-Induced Series Resistance Degradation Behaviors in Fielded Crystalline Silicon Photovoltaic Modules Due to Difference in Bill of Materials

This case study investigates mono-crystalline silicon modules from underperforming portions of a utility-scale photovoltaic power plant. Field-collected I-V curves and electroluminescence imaging suggested that increased series resistance was a primary factor driving module degradation. Selected modules were removed from the field for further analysis, including incremental damp heat accelerated testing, which confirmed a progression in series resistance degradation. Two distinct cell degradation behaviors became apparent during the investigation. Cross-sectional scanning electron microscopy (with elemental analysis) and scanning spreading resistance microscopy identified key differences between the two degradation mechanisms, primarily grid finger width and contact resistance. Additionally, the study highlights the reliability implications of retest requirements in International Electrotechnical Commission 61215 for material changes and how they may have mitigated the degradation observed at this site.

14 SOLAR ENERGY↗
DOE OSTI2023

Neuromorphic Photonics Based on Phase Change Materials

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Kinetics of solid–liquid interface motion in molecular dynamics and phase-field models: crystallization of chromium and silicon

The results of molecular dynamics (MD) simulations of the crystallization process in one-component materials and solid solution alloys reveal a complex temperature dependence of the velocity of the crystal–liquid interface featuring an increase up to a maximum at 10–30% undercooling below the equilibrium melting temperature followed by a gradual decrease of the velocity at deeper levels of undercooling. At the qualitative level, such non-monotonous behaviour of the crystallization front velocity is consistent with the diffusion-controlled crystallization process described by the Wilson–Frenkel model, where the almost linear increase of the interface velocity in the vicinity of melting temperature is defined by the growth of the thermodynamic driving force for the phase transformation, while the decrease in atomic mobility with further increase of the undercooling drives the velocity through the maximum and into a gradual decrease at lower temperatures. At the quantitative level, however, the diffusional model fails to describe the results of MD simulations in the whole range of temperatures with a single set of parameters for some of the model materials. The limited ability of the existing theoretical models to adequately describe the MD results is illustrated in the present work for two materials, chromium and silicon. It is also demonstrated that the MD results can be well described by the solution following from the hodograph equation, previously found from the kinetic phase-field model (kinetic PFM) in the sharp interface limit. The ability of the hodograph equation to describe the predictions of MD simulation in the whole range of temperatures is related to the introduction of slow (phase field) and fast (gradient flow) variables into the original kinetic PFM from which the hodograph equation is obtained. The slow phase-field variable is responsible for the description of data at small undercoolings and the fast gradient flow variable accounts for local non-equilibrium effects at high undercoolings. The introduction of these two types of variables makes the solution of the hodograph equation sufficiently flexible for a reliable description of all nonlinearities of the kinetic curves predicted in MD simulations of Cr and Si. This article is part of the theme issue ‘Transport phenomena in complex systems (part 1)’.

Science & Technology - Other Topics↗