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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Dendritic web - A viable material for silicon solar cells

The dendritic web process is a technique for growing thin silicon ribbon from liquid silicon. The material is suitable for solar cell fabrication and, in fact, cells fabricated on web material are equivalent in performance to cells fabricated on Czochralski-grown material. A recently concluded study has delineated the thermal requirements for silicon web crucibles, and a detailed conceptual design has been developed for a laboratory growth apparatus.

Seidensticker, R. G.↗
NASA NTRS1999

Thermal/environmental barrier coating system for silicon-based materials

A coating system for a substrate containing a silicon-based material, such as silicon carbide-containing ceramic matrix materials containing silicon carbide and used to form articles exposed to high temperatures, including the hostile thermal environment of a gas turbine engine. The coating system includes a layer of barium strontium aluminosilicate (BSAS) as a bond coat for a thermal-insulating top coat. As a bond coat, the BSAS layer serves to adhere the top coat to a SiC-containing substrate. The BSAS bond coat exhibits sufficient environmental resistance such that, if the top coat should spall, the BSAS bond coat continues to provide a level of environmental protection to the underlying SiC-containing substrate.

Spitsberg, Irene T.↗
NASA NTRS1985

Reliability of two sintered silicon nitride materials

Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.

Mieskowski, D. M.↗
NASA NTRS2009

Coated silicon comprising material for protection against environmental corrosion

In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

Hazel, Brian Thomas↗
NASA NTRS1985

Electrical, structural, and chemical characterization of silicon sheet materials

Progress on the electrical, structural, and chemical characterization of silicon sheet material is reported. In the study on high temperature deformation of dendritic web ribbon, experimental creep tests were performed in four point bending under constant load conditions, and unusual behavior was observed. Also, measurements of oxygen content in web ribbon were made. Two conclusions reached are creep behavior of web which is very different from any seen for single crystal silicon and oxygen level in web silicon which is near the saturation level at the melting point of silicon.

Ast, D. G.↗
NASA NTRS1985

FSA future directions: FSA technology activities in FY86

The silicon material, advanced silicon sheet, device research, and process research activities are explained. There will be no new initiatives. Many activities are targeted for completion and the emphasis will then be on technology transfer. Industrial development of the fluidized-bed reactor (FBR) deposition technology is proceeding. Technology transfer and industry funding of sheet development are continuing.

Leipold, M. H.↗
NASA NTRS1974

Soft, thermally conductive material

Silicon rubber filled with high percentage of silver-plated copper microspheres provides soft, thermally conductive seat for thermal switch. Material also could be used in thin sheet form to prevent corrosion between dissimilar metals while maintaining good thermal communication. It could be used as thermal gasketing.

Anderson, A. J.↗
NASA NTRS2012

Effects of Atomic Oxygen and Grease on Outgassing and Adhesion of Silicone Elastomers for Space Applications

An investigation of silicone elastomers for seals used in docking and habitat systems for future space exploration vehicles is being conducted at NASA. For certain missions, NASA is considering androgynous docking systems where two vehicles each having a seal would be required to: dock for a period of time, seal effectively, and then separate with minimum push-off forces for undocking. Silicone materials are generally chosen for their wide operating temperatures and low leakage rates. However silicone materials are often sticky and usually exhibit considerable adhesion when mated against metals and silicone surfaces. This paper investigates the adhesion unit pressure for a space rated silicone material (S0383-70) for either seal-on-seal (SoS) or seal-on-aluminum (SoAl) operation modes in the following conditions: as-received, after ground-based atomic-oxygen (AO) pre-treatment, after application of a thin coating of a space-qualified grease (Braycote 601EF), and after a combination of AO pre-treatment and grease coating. In order of descending adhesion reduction, the AO treatment reduced seal adhesion the most, followed by the AO plus grease pre-treatment, followed by the grease treatment. The effects of various treatments on silicone (S0383-70 and ELA-SA-401) outgassing properties were also investigated. The leading adhesion AO pretreatment reduction led to a slight decrease in outgassing for the S0383-70 material and virtually no change in ELA-SA-401 outgassing.

deGroh, Henry C., III↗
DOE OSTI2023

In situ high-temperature 3D imaging of the damage evolution in a SiC nuclear fuel cladding material

Silicon carbide (SiC)-based nuclear fission fuel rod cladding has been considered as one of the possible designs for accident tolerant fuels. It is in the form of a SiC fibre reinforced SiC matrix composite tube (SiC f -SiC m ) with monolithic SiC outer and/or inner coating layers. This study focuses on the deformation and fracture processes in this material using in situ X-ray micro-computed tomography (XCT) at room temperature (RT) and 1200 °C in an inert gas environment in a C-ring compression loading configuration. Prior to testing, local properties and residual stresses were characterised using nanoindentation and Raman spectroscopy since they can impact the mechanical behaviour of the material. The 3D strain distribution, crack formation and propagation processes including the toughening mechanisms (e.g., crack deflection, micro-cracking, crack bridging and bifurcation) are investigated in the coating and underlying composites at RT and 1200 °C. There is no particular sequence which toughening mechanism occurs first – this is very different from the conventional toughening theory in ceramic-matrix composites under uniaxial tension loading. Indeed, no evidence of fibre pull-out or fibre fracture was observed in this SiC f -SiC m nuclear cladding material in the current C-ring compression configuration. The correlation between local measurements and bulk mechanical behaviour are discussed.

3D imaging↗
NASA NTRS1982

Acoustic microscopy of silicon carbide materials

It is shown that scanning laser acoustic microscopy (SLAM) is able to detect such fracture-controlling flaws in dense silicon carbide materials as surface voids, whose diameter-by-depth size is a minimum of 75 by 17 microns in reaction-bonded SiC and 68 by 25 microns in alpha-SiC. Surface conditions such as pitting, which have been found to limit the discernibility of drilled holes, become important when pit and drilled hole sizes become comparable.

Khandelwal, P. K.↗
NASA NTRS1981

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

Kachare, A. H.↗
DOE OSTI2020

Fifth-degree elastic energy for predictive continuum stress–strain relations and elastic instabilities under large strain and complex loading in silicon

Materials under complex loading develop large strains and often phase transformation via an elastic instability, as observed in both simple and complex systems. Here, we represent a material (exemplified for Si I) under large Lagrangian strains within a continuum description by a 5th-order elastic energy found by minimizing error relative to density functional theory (DFT) results. The Cauchy stress—Lagrangian strain curves for arbitrary complex loadings are in excellent correspondence with DFT results, including the elastic instability driving the Si I → II phase transformation (PT) and the shear instabilities. PT conditions for Si I → II under action of cubic axial stresses are linear in Cauchy stresses in agreement with DFT predictions. Such continuum elastic energy permits study of elastic instabilities and orientational dependence leading to different PTs, slip, twinning, or fracture, providing a fundamental basis for continuum physics simulations of crystal behavior under extreme loading.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Investigation of diffusion barrier materials on silicon carbide filaments

The formation of diffusion barrier materials on SiC filaments is discussed. The filaments possess a carbon-rich surface layer and, consequently, are difficult to wet by molten Al and tend to react with the molten metal, degrading filament strength. Characterization of the filament with various CVD barrier materials is reported.

Wawner, F. E.↗
DOE OSTI2020

Fifth-degree elastic energy for predictive continuum stress-strain relations and elastic instabilities under large strain and complex loading in silicon

Materials under complex loading develop large strains and often phase transformation via an elastic instability, as observed in both simple and complex systems. Here, we represent a material (exemplified for Si I) under large Lagrangian strains within a continuum description by a 5th-order elastic energy found by minimizing error relative to density functional theory (DFT) results. The Cauchy stress—Lagrangian strain curves for arbitrary complex loadings are in excellent correspondence with DFT results, including the elastic instability driving the Si I → II phase transformation (PT) and the shear instabilities. PT conditions for Si I → II under action of cubic axial stresses are linear in Cauchy stresses in agreement with DFT predictions. Such continuum elastic energy permits study of elastic instabilities and orientational dependence leading to different PTs, slip, twinning, or fracture, providing a fundamental basis for continuum physics simulations of crystal behavior under extreme loading.

Levitas, Valery↗
NASA NTRS1983

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Spitzer, M. B.↗
DOE OSTI2022

Epoxy / Silicone Potting Material Removal for Greater Recovery of Circuit Boards

This report documents an exploratory research project, “Epoxy/Silicone Potting Material Removal for Greater Recovery of Circuit Boards,” that investigated micro abrasion and laser ablation as potential cost effective methods for removal of epoxy and silicone potting material from printed circuit boards (PCBs) to expose components for testing and repair. The ability to cost effectively remove such PCB potting materials will improve PCB repair, remanufacture, and reuse opportunities with potential for sizable reductions in material use, E-waste, and energy. Laser ablation was identified as a method potentially warranting further investigation, in particular for epoxy based potting materials.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1980

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Dumas, K. A.↗