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At least 109 records · Page 6

Summary of flat-plate solar array project documentation. Abstracts of published documents, 1975 to June 1982

Technologies that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and government applications at a cost per watt that is competitive with other means is investigated. Silicon refinement processes, advanced silicon sheet growth techniques, solar cell development, encapsulation, automated fabrication process technology, advanced module/array design, and module/array test and evaluation techniques are developed.

Source record↗

Summary of flat-plate solar array project documentation: Abstracts of published documents, 1975-1986, revision 1

Abstracts of final reports, or the latest quarterly or annual, of the Flat-Plate Solar Array (FSA) Project Contractor of Jet Propulsion Laboratory (JPL) in-house activities are presented. Also presented is a list of proceedings and publications, by author, of work connected with the project. The aim of the program has been to stimulate the development of technology that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and Government applications at a cost per watt that is competitive with utility generated power. FSA Project activities have included the sponsoring of research and development efforts in silicon refinement processes, advanced silicon sheet growth techniques, higher efficiency solar cells, solar cell/module fabrication processes, encapsulation, module/array engineering and reliability, and economic analyses.

Phillips, M. J.↗

Process and Radiation Induced Defects in Electronic Materials and Devices

Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.

Washington, Kenneth↗

Evaluation and verification of epitaxial process sequence for silicon solar cell production

The applicability of solar cell and module processing sequences, to be used on lower cost epitaxial silicon wafers was evaluated. The extent to which the process sequences perform effectively when applied to film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si is examined. It is concluded that these substrates are satisfactory in their cell performance.

Redfield, D.↗

Rapid thermal processing of Czochralski silicon substrates: Defects, denuded zones, and minority carrier lifetime

Rapid thermal processing (RTP) of Czochralski (Cz) silicon substrates is discussed with its attendant effects on defects, denuded zones, and minority carrier lifetime. Preferential chemical etching and X-ray topography was used to delineate defects which were subsequently correlated with minority carrier lifetime; determined by a pulse metallo-organic decompositon (MOD) test device. The X-ray delineation of grown-in defects was enhanced by a lithium decoration procedure. Results, thus far, show excellent correlation between process-induced defects.

Rozgonyi, G. S.↗

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗

LSSA (Low-cost Silicon Solar Array) project

The Photovoltaic Conversion Program was established to find methods of economically generating enough electrical power to meet future requirements. Activities and progress in the following areas are discussed: silicon-refinement processes; silicon-sheet-growth techniques; encapsulants; manufacturing of off-the-shelf solar arrays; and procurement of semistandardized solar arrays.

Source record↗

SEU In An Advanced Bipolar Integrated Circuit

Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.

Zoutendyk, John A.↗

Microelectromechanical Systems for Aerodynamics Applications

Microelectromechanical systems (MEMS) embody the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including micro-sensors and micro-actuators, are attractive because they can be made small (characteristic dimension about microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. MEMS pressure sensors, wall-shear-stress sensors, and micromachined hot-wires are nearing application in aeronautics. MEMS actuators face a tougher challenge since they have to be scaled (up) to the physical phenomena that are being controlled. MEMS actuators are proposed, for example, for controlling the small structures in a turbulent boundary layer, for aircraft control, for cooling, and for mixing enhancement. Data acquisition or control logistics require integration of electronics along with the transducer elements with appropriate consideration of analog-to-digital conversion, multiplexing, and telemetry. Altogether, MEMS technology offers exciting opportunities for aerodynamics applications both in wind tunnels and in flight

Mehregany, Mehran↗

MEMS Applications in Aerodynamic Measurement Technology

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.

Reshotko, E.↗

Cryolite Byproduct in Silicon Production

Process reacts alumina hydrate with HF and NaF from silicon-production process. Cryolite is produced by adding reaction step to process that makes high-purity silicon from fluorosilicic acid. New extended process has been demonstrated in laboratory and could be used in commercial plants.

Bartlett, R. W.↗

Process Research of Polycrystalline Silicon Material (PROPSM)

A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

Culik, J. S.↗

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗

Silicon solar cell process. Development, fabrication and analysis

Solar cells were fabricated from unconventional silicon sheets, and the performances were characterized with an emphasis on statistical evaluation. A number of solar cell fabrication processes were used and conversion efficiency was measured under AMO condition at 25 C. Silso solar cells using standard processing showed an average efficiency of about 9.6%. Solar cells with back surface field process showed about the same efficiency as the cells from standard process. Solar cells from grain boundary passivation process did not show any improvements in solar cell performance.

Yoo, H. I.↗

Closed-Loop Process Yields Ultrapure Silicon

Metallurgical-grade silicon transforms into tribromosilane by reacting it with process byproducts. Tribromosilane is separated from mixture, purified, and finally decomposed in presence of hydrogen in silicon-product reactor. Conversion efficiencies of 30 to greater than 60 percent of tribromosilane to ultrapure granular polycrystalline silicon are typical in produce reactor.

Schumacher, J. C.↗

Silicon Solar Cell Process Development, Fabrication and Analysis

Solar cells were constructed from polycrystalline silicon sheet material (10 cm x 10 cm). These cells were made using conventional aerospace methods and serve as the so-called baseline cell for analysis and comparison with cells to be made from similar material, but using optimized processing techniques. Before and during the processing of the baseline cells in a cleaned diffusion tube, control cells were built using the baseline method. All cells were measured on a solar simulator at air mass zero and 28 C. Average efficiency for the baseline cells was 9.5%. Efficiency was found to vary with location in the sheet. Center regions had higher efficiencies whereas corner and edge regions had lower efficiencies. In general, the efficiency falls off with distance from the center of the sheet.

Minahan, J. A.↗

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗