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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Determining the Efficiency of EMPHATICs Silicon Strip Detectors (SSDs)

EMPHATIC is an experiment at Fermilab which aims to reduce current neutrino flux uncertainties. This report discusses the limitations current neutrino flux uncertainties places on large scale neutrino experiments, provides background on the EMPHATIC experiment, and details the project of determining the efficiency of the Silicon Strip Detectors (SSDs) used in EMPHATIC. As part of the data analysis process and in order to increase the accuracy of EMPHATIC’s simulations a representation of efficiency of each SSD is required. To achieve this a data-driven analysis was performed on EMPHATIC's collected data using the Root and Art frameworks. Visual and numerical representations of efficiency were determined. The average efficiency over all SSDs is 98.58\%, however this number deflated as it includes known bad channels.

Olson, V. [Illinois U., Urbana (main)]↗
NASA NTRS1998

Development of a Broad High-Energy Gamma-Ray Telescope using Silicon Strip Detectors

The research effort has led to the development and demonstration of technology to enable the design and construction of a next-generation high-energy gamma-ray telescope that operates in the pair-production regime (E greater than 10 MeV). In particular, the technology approach developed is based on silicon-strip detector technology. A complete instrument concept based on this technology for the pair-conversion tracker and the use of CsI(T1) crystals for the calorimeter is now the baseline instrument concept for the Gamma-ray Large Area Space Telescope (GLAST) mission. GLAST is NASA's proposed high-energy gamma-ray mission designed to operate in the energy range from 10 MeV to approximately 300 GeV. GLAST, with nearly 100 times the sensitivity of EGRET, operates through pair conversion of gamma-rays and measurement of the direction and energy of the resulting e (+) - e (-) shower. The baseline design, developed with support from NASA includes a charged particle anticoincidence shield, a tracker/converter made of thin sheets of high-Z material interspersed with Si strip detectors, a CsI calorimeter and a programmable data trigger and acquisition system. The telescope is assembled as an array of modules or towers. Each tower contains elements of the tracker, calorimeter, and anticoincidence system. As originally proposed, the telescope design had 49 modules. In the more optimized design that emerged at the end of the grant period the individual modules are larger and the total number in the GLAST array is 25. Also the calorimeter design was advanced substantially to the point that it has a self-contained imaging capability, albeit much cruder than the tracker.

Michelson, Peter F.↗
DOE OSTI2025

Quality concerns caused by quality control — deformation of silicon strip detector modules in thermal cycling tests

The ATLAS experiment at the Large Hadron Collider (LHC) is currently preparing to replace its present Inner Detector (ID) with the upgraded, all-silicon Inner Tracker (ITk) for its High-Luminosity upgrade (HL-LHC). The ITk will consist of a central pixel tracker and the outer strip tracker, consisting of about 19,000 strip detector modules. Each strip module is assembled from up to two sensors, and up to five flexes (depending on its geometry) in a series of gluing, wirebonding and quality control steps. During detector operation, modules will be cooled down to temperatures of about -35 °C (corresponding to the temperature of the support structures on which they will be mounted) after being initially assembled and stored at room temperature. In order to ensure compatibility with the detector's operating temperature range, modules are subjected to thermal cycling as part of their quality control process. Ten cycles between -35 °C and +40 °C are performed for each module, with full electrical characterisation tests at each high and low temperature point. As part of an investigation into the stress experienced by modules during cooling, it was observed that modules generally showed a change in module shape before and after thermal cycling. This paper presents a summary of the discovery and understanding of the observed changes, connecting them with excess module stress, as well as the resulting modifications to the module thermal cycling procedure.

47 OTHER INSTRUMENTATION↗
NASA NTRS2007

A Radiation Dosimeter Concept for the Lunar Surface Environment

A novel silicon detector configuration for radiation dose measurements in an environment where solar energetic particles are of most concern is described. The dosimeter would also measure the dose from galactic cosmic rays. In the lunar environment a large range in particle flux and ionization density must be measured and converted to dose equivalent. This could be accomplished with a thick (e.g. 2mm) silicon detector segmented into cubic volume elements "voxels" followed by a second, thin monolithic silicon detector. The electronics needed to implement this detector concept include analog signal processors (ASIC) and a field programmable gate array (FPGA) for data accumulation and conversion to linear energy transfer (LET) spectra and to dose-equivalent (Sievert). Currently available commercial ASIC's and FPGA's are suitable for implementing the analog and digital systems.

Adams, James H.↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗
DOE OSTI2024

Improved modeling of detector response effects in phonon-based crystal detectors used for dark matter searches

Various dark matter search experiments employ phonon-based crystal detectors operated at cryogenic temperatures. Some of these detectors, including certain silicon detectors used by the SuperCDMS Collaboration, are able to achieve single-charge sensitivity when a voltage bias is applied across the detector. The total amount of phonon energy measured by such a detector is proportional to the number of electron-hole pairs created by the interaction. However, crystal impurities and surface effects can cause propagating charges to either become trapped inside the crystal or create additional unpaired charges, producing non-quantized measured energy as a result. A new analytical model for describing these detector response effects in phonon-based crystal detectors is presented. This model improves upon previous versions by demonstrating how the detector response, and thus the measured energy spectrum, is expected to differ depending on the source of events. Finally, we use this model to extract detector response parameters for SuperCDMS HVeV detectors, and illustrate how this robust modelling can help statistically discriminate between sources of events in order to improve the sensitivity of dark matter search experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1987

Silicon radiation detectors with oxide charge state compensation

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

Walton, J. T.↗
NASA NTRS2006

Simultaneous observation of the radiation environment inside and outside the ISS

The low-Earth orbit (LEO) radiation environment has been directly observed by the IV and EV charged particle directional spectrometers (CPDS) aboard the International Space Station (ISS). The EV instrument is mounted on the S0 truss of the ISS and consists of three separate silicon detector telescopes which are oriented in different directions. The IV instrument is a single silicon detector telescope located inside the US Laboratory module of the ISS. We report on the current state of the data analysis for these instruments, which includes the proton and He stopping particle spectra, relative CNO abundances, LET spectra, and measured dose rate as a function of time.

Lee, K. T.↗
NASA NTRS1990

Dual purpose pyrometer for temperature and solidification velocity measurement

A dual purpose pyrometer is described that allows both accurate radiance temperature measurement and fast temporal response. The system uses two silicon photodiodes with separate optical paths derived from a common spot on the sample. The optical bandwidths and response times of each detection circuit are tailored to the function of each radiometer. The radiance temperature of electromagnetically levitated metallic samples is measured over a narrow optical bandwidth with a high-gain silicon detector. The velocity of solidification of undercooled melts can be deduced from the rise time of the second silicon detector which samples a broad optical bandwidth and has a fast response time. Results from experiments on the undercooling and solidification behavior of electromagnetically levitated pure nickel show that the solidification velocity approaches 17 m/s at high undercooling.

Hofmeister, W. H.↗
DOE OSTI2022

Characterization of PIPS detectors for measurement of radioxenon

The International Monitoring System arm of the Comprehensive Nuclear-Test-Ban Treaty Organization utilizes sampling of atmospheric radioxenon to scan the world for nuclear testing events. Current designs utilized in the field involve plastic scintillator cells run in coincidence with Sodium Iodide (NaI) or High Purity Germanium (HPGe) detectors. The use of plastic scintillators as electron detectors exhibit some issues in comparison to other materials. Silicon detectors are analyzed as an alternative to plastic scintillators for beta detection based on their higher energy resolution and lowered memory effect. A radioxenon detection setup was created with the intent of measuring radioxenon samples using coincidence counting between silicon and NaI detectors as well as silicon and HPGe. Finally, the absolute efficiency of both setups is calculated and compared.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2026

Pixel-Strip Module Testing and Performance Analysis for the CMS Phase-2 Outer Tracker Upgrade

In response to the demanding environment of the High-Luminosity Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) Experiment's Outer Tracker is being replaced with a lighter, higher-granularity, radiation-tolerant silicon detector capable of providing tracking information directly to the Level-1 trigger system. The new Outer Tracker consists of Pixel-Strip (PS) and Strip-Strip (2S) transverse momentum (pT) modules, which are assembled and tested at, among other centers, Fermilab's Silicon Detector Facility. PS modules consist of a pixel sensor, a strip sensor, and multiple application-specific integrated circuits (ASICs). This poster studies the performance of MaPSAs, silicon macro-pixel sensors bump-bonded to 16 macro-pixel ASICS. It presents the testing procedures for MaPSAs and MaPSA-strip sensor sub-assemblies, as well as the results of calibration and performance studies of two PS modules before and after irradiation. These results assess the impact of irradiation on module performance, providing insight into the modules' expected performance in the HL-LHC environment.

Kimrey, Emerson [Scripps College]↗
DOE OSTI2020

Charge collection and electrical characterization of neutron irradiated silicon pad detectors for the CMS High Granularity Calorimeter

The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$\mu\textrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^\circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^\circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$\%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$\%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Developing the S 32 ( p , d ) S * 31 ( p ) ( γ ) reaction to probe the P 30 ( p , γ ) S 31 reaction rate in classical novae

Background: The 30 P(p,γ) 31 S reaction rate is one of the largest remaining sources of uncertainty in the final abundances of nuclei created in a classical nova involving a ONe white dwarf. The reaction rate directly influences silicon isotopic ratios, which are used as identifiers of presolar grains with nova origins. Additionally, the uncertainty in the 30 P(p,γ) 31 S reaction rate has been found to limit the use of nova nuclear thermometers based on observations of elemental ratios in nova ejecta. Purpose: Reduce uncertainties in the nuclear data for proton-unbound states in 31 S, which act as resonances for the 30 P(p,γ) 31 S reaction at classical nova temperatures, and develop a technique for high efficiency, high-resolution reaction-decay coincidence measurements. Methods: Here, the 32 S(p,d) 31 S reaction was used to populate the states of interest in 31 S. The experiment was performed at the Texas A&M Cyclotron Institute using the LLNL Hyperion array for the detection of charged particles and γ rays. A downstream silicon telescope was used to select reaction deuterons, and a single upstream silicon detector was used to measure protons emitted in the decay of unbound 31 S levels. Results: Several states in 31 S above the proton separation energy were observed to have been populated. Decay protons from the resonant states in 31 S were identified as events in the upstream silicon detectors that came in coincidence with deuterons in the downstream telescope. Protons emitted from these states were measured and branching ratios extracted. Conclusions: While no new reaction rate is derived, spin-parity assignments for several higher-lying proton unbound states have been confirmed. Measured p 0 branching ratios for these levels have been compared to previous measurements with good agreement, and in some cases provided a reduction in uncertainty. The previously identified T = 3/2 state may have been incorrectly assigned a large p 0 branching ratio in a previous measurement. The technique of measuring reaction-decay coincidences with a particle-gamma setup appears promising.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

SENSEI at SNOLAB: Single-Electron Event Rate and Implications for Dark Matter

We present results from data acquired by the SENSEI experiment at SNOLAB after a major upgrade in May 2023, which includes deploying 16 new sensors and replacing the copper trays that house the CCDs with a new light-tight design. We observe a single-electron event rate of (1.39±0.11)×10^{-5} e^{-}/pix/day, corresponding to (39.8±3.1) e^{-}/gram/day. This is an order-of-magnitude improvement compared to the previous lowest single-electron rate in a silicon detector and the lowest for any photon detector in the wavelength range between near-infrared and ultraviolet. We use these data to obtain a 90% confidence level upper bound of 1.53×10^{-5} e^{-}/pix/day and to set constraints on sub-GeV dark matter candidates that produce single-electron events. We hypothesize that the data taken at SNOLAB in the previous run, with an older tray design for the sensors, contained a larger rate of single-electron events due to light leaks. We test this hypothesis using data from the SENSEI detector located in the MINOS cavern at Fermilab.

dark matter↗
DOE OSTI2021

Measurement of the bulk radioactive contamination of detector-grade silicon with DAMIC at SNOLAB

We present measurements of bulk radiocontaminants in the high-resistivity silicon CCDs from the DAMIC experiment at SNOLAB. We utilize the exquisite spatial resolution of CCDs to discriminate between α and β decays, and to search with high efficiency for the spatially-correlated decays of various radioisotope sequences. Using spatially-correlated β decays, we measure a bulk radioactive contamination of 32 Si in the CCDs of 140 ± 30 μBq/kg, and place an upper limit on bulk 210 Pb of < 160 μBq/kg. Using similar analyses of spatially-correlated α and β decays, we set upper limits of < 11 μBq/kg (0.9 ppt) on 238 U and < 7.3 μBq/kg (1.8 ppt) on 232 Th in the bulk silicon. The ability of DAMIC CCDs to identify and reject spatially-coincident backgrounds, particularly from 32 Si, has significant implications for the next generation of silicon-based dark matter experiments, where β's from 32 Si decay will likely be a dominant background.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗