Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “semiconductor radiation detectors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Hot-pressed 6 LiInSe 2 for use as a ceramic radiation detector

Lithium based chalcogenides have many uses in the nuclear science field. 6 LiInSe 2 (or LISe) has been researched extensively because of its ability to operate in both scintillator and semiconductor modes. Here, this makes it useful in applications including nuclear material detection for national security, space applications, and medical imaging. In some applications growth and fabrication costs are of concern, as it takes upwards of 40 days to synthesize a charge, grow a crystal and fabricate a detector. Ceramics are a solution for this long route of preparation. This research shows that using a 6 LiInSe 2 ceramic instead of a single crystal significantly decreases the time required to make a detector. In the present work, ceramic wafers can be formed using a mechanical press equipped with a heating attachment. The resulting ceramic wafer performs very similar to a slow-growth single crystal when used in the scintillator mode.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Enhancement of radiation detection performance with reduction of EH 6/7 deep levels in n-type 4H–SiC through thermal oxidation

We report the effect of EH 6/7 electron trap centers alone on the performance of high-resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky barrier detector (SBD) and a metal-oxide-semiconductor (MOS) capacitor detector fabricated using two sister samples derived from the same 50 μm 4H–SiC parent wafer exhibited widely different energy resolutions of 0.4% and 0.9% for 5486 keV alpha particles. An equivalent noise charge model analysis ruled out the effect of the detector capacitance and the leakage current on the resolution of the detectors. Deep level transient spectroscopic studies revealed the presence of two trapping centers in each detector within the temperature scan range 240–800 K. The Z 1/2 center, a potential electron trap, was detected in both the detectors in equal concentration, which suggested that the observed difference in the energy resolution is due to the presence of the other defect, the EH 6/7 center, in the SBD. The capture cross section of the EH 6/7 center was calculated to be three orders of magnitude higher than the second defect [a carbon antisite vacancy (CAV) center] observed in the MOS detector with an activation energy of 1.10 eV, which accounted for the enhanced electronic trapping in the SBD leading to its poor energy resolution. It has been proposed that the EH 6/7 centers in the SBD have likely been reconfigured to CAV pairs during the thermal growth of the silicon dioxide layer in the MOS detector. The proposed formation mechanism of CAV, a stable qubit state for quantum information processing, addresses the outstanding questions related to the role of defect dynamics in their formation.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2021

Spatially resolved x-ray detection with photonic crystal scintillators

We study the self-collimation phenomenon in photonic crystals (PhC) of wide bandgap materials for ultra-fast and high spatial resolution x-ray detection. We work on various heavy inorganic scintillators: BaF 2 , GaN, ZnO, CsI:Tl, NaI:Tl, LYSO, WO 4 compounds, and plastic scintillators. Conventional scintillator detectors do not rely on a direct detection mechanism; hence, they require intricate design and fabrication processes. We offer a PhC design to observe self-collimation phenomena and overcome the ongoing spatial resolution challenges with these types of materials. We investigate the photonic band diagrams and iso-frequency contours. Fourier transforms based on finite-difference time-domain and frequency domain simulations are done for verifying and analyzing the self-collimation with the selected material. Light extraction efficiency at the PhC–air interface, depending on the truncation distance from the excitation point, is measured. Beam divergence values are calculated at 1 mm propagation distance. The vertical field profiles are obtained to observe the confinement. For the spatial resolution analysis, cross-sectional beam profiles have been examined. Furthermore, Gaussian envelopes are fitted to beam profiles for a consistent data analysis, and full-width-at-half-maximum values are considered. As a result, we theoretically prove and demonstrate the spatially resolved x-ray detection at the sub-micrometer level for a wide range of scintillator materials.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Radioactivities of Long Duration Exposure Facility (LDEF) materials: Baggage and bonanzas

Radioactivities in materials onboard the returned Long Duration Exposure Facility (LDEF) satellite were studied by a variety of techniques. Among the most powerful is low background Ge semiconductor detector gamma ray spectrometry. The observed radioactivities are of two origins: those radionuclides produced by nuclear reactions with the radiation field in orbit and radionuclides present initially as contaminants in materials used for construction of the spacecraft and experimental assemblies. In the first category are experiment related monitor foils and tomato seeds, and such spacecraft materials as Al, stainless steel, and Ti. In the second category are Al, Be, Ti, Va, and some special glasses. Consider that measured peak-area count rates from both categories range from a high value of about 1 count per minute down to less than 0.001 count per minute. Successful measurement of count rates toward the low end of this range can be achieved only through low background techniques, such as used to obtain the results presented here.

Smith, Alan R.↗
DOE OSTI2020

Radioactive Source Localization via Bayesian Particle Filter

In the event of a misplaced radioactive source or other emergency situation, measuring a radiation field, mapping its distribution, and determining a source location are essential tasks to ameliorating the situation. However, radiation fields may be extremely hazardous to human surveyors and minimizing received radiation doses is just as essential. Robots appear to be a potential solution to these problems. Beyond simply measuring radiation, the robot's computer processing capabilities offer a way to apply complex data analysis methods to radiation measurements in real-time. Methods which predict likely source locations can then feed this information into other processes, potentially improving path planning and enabling more efficient measurements. Given a robot mounted with a gamma-ray detector, can we: develop a methodology to account for detector performance across a wide range of source angles, distances, and photon energies? operate an autonomously navigating robot to effectively survey and characterize an area of interest? implement a data analysis method, conventionally used in measurements of motion, for source localization purposes? An open-source TurtleBot 3 robot, running Robot Operating System (ROS) on Ubuntu 16.04 LTS, was fitted with a Kromek GR1{sup R} Cadmium Zinc Telluride (CZT) solid-state gamma-ray detector. As a part of ROS, the packages OpenSlam, gmapping, and amcl were used to perform Simultaneous Localization and Mapping (SLAM), determining the robot's position and mapping the surrounding area. Data was acquired via Lidar mounted on top the TurtleBot 3. Detector Calibration Fit: The equation was fit to 365 counts of various energies, distances, and angles. A MATLAB{sup R} program was written to simulate measurements taken a robot on a random walk, with count data and positions discretized into finite element pixels. Using this program, a sample of 100 runs was performed on a map with a simulated source at the center, with a total of 200 of 2 pixels each. Similarly, multiple runs of the filter were performed on recorded robot measurement data. In both simulation and real tests, when corrected for errors (particles placed outside of bounds or on the robot, and simulation-specific errors), corresponding t-tests of predicted x and y-coordinates were within a 95% confidence interval of the actual position. For the real trial, these positions are slightly skewed right in the x-axis as the robot remained mainly to the left side of the source within the sample area. These simulations demonstrate potential validity for the usage of a particle filter as method of radioactive source localization. In the future, true real-time implementation and data fusion may further augment the performance of the robot to localize lost sources. Additionally, identification of multiple sources, determination of source types, and usage of a collimator are areas to potentially be explored.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2022

Radiation detector using a graphene amplifier layer

A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D 2 GOS) detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Progress Toward Fast Decay Energy Spectroscopy for Actinide Analysis

Decay energy spectroscopy (DES) is an increasingly popular technique for measuring isotopic composition of actinide samples for nuclear safeguards applications. Current approaches for actinide DES utilize milligram-scale external gold absorbers (> 0.1 nJ/K) that are integrated with actinide samples through mechanical kneading and are thermally connected to microcalorimeters using indium or gold wire bonds. This leads to relatively slow sensor rise time and, consequently, limits counting speed to a few counts per second. We are developing faster metallic magnetic calorimeter-based DES by integrating actinide samples with magnetic sensor materials. This reduces signal rise time and enables high counting speed while maintaining the ability to knead the radioactive source with the absorber. We have measured signal rise time of 0.7 μs with a 1.5 mg external gold absorber using this approach. Here, we also demonstrated online DES operation using an Ortec DSPEC 50, a commercially available data acquisition system developed for semiconductor detectors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1993

Synthesis, Properties, and Applications Of Boron Nitride

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

Pouch, John J.↗
DOE OSTI2022

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Abstract Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.

36 MATERIALS SCIENCE↗
NASA NTRS2007

Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

Wrbanek, John D.↗
NASA NTRS1972

High field CdS detector for infrared radiation

New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.

Tyagi, R. C.↗
DOE OSTI2020

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
DOE OSTI2024

Investigating Gadolinium-Lined Sodium-Iodide Neutron Detectors for Mobile Applications

For enhancing the effectiveness of nonproliferation efforts in neutron detection, most portable instruments rely on 6 Li scintillators, 10 B-based detectors, or gas-filled 3 He proportional counters. Additionally, gamma-ray detectors based on scintillators and semiconductors are often employed for search applications to find radioactive material in the field. These systems typically include dedicated detectors along with separate high voltage supplies and processing electronics for the gamma-ray and neutron detectors. Ideally, a portable radiation detection system should be lightweight, compact, and cost-effective. In the field, scintillators can serve a dual purpose: (1) detecting gamma-rays and (2) detecting neutrons. Gamma-ray detection with scintillators is based on the interaction of gamma-rays within the scintillating material, whereas neutron detection depends indirectly on neutron capture events. These capture events generate conversion electrons and gamma-rays, which can interact with the scintillator. For enhancing neutron capture, the scintillator can be surrounded by neutron absorber materials with a high neutron cross section. The resulting secondary electrons and gamma-rays from neutron interactions, depending on the absorber material used, can then be analyzed to detect the presence of neutron sources. Similarly, semiconductor-based detectors can be employed along with neutron absorbers as liners for neutron detection. 158 Gd has a significantly larger neutron cross section than 3 He, commonly used in gas-filled proportional counters, as shown in Figure 1. For thermal (0.025 eV) neutrons, the absorption cross section of 158 Gd is 10,000 times greater than that of 3 He (refer to Figure 1). This feature makes naturally occurring gadolinium, which consists of 24.8% 158 Gd, a promising neutron absorber material for use in combination with gamma-ray detectors–yielding a hybrid detector–for neutron detection.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
NASA NTRS2014

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Su, Ching-Hua↗
DOE OSTI2021

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O N (oxygen residing on the nitrogen site) donors and the V B -H (boron vacancy bonded with hydrogen complex) deep level acceptors. Experimental results further revealed that the applied electric field induces an anti-correlation between the emission intensity of the DAP transition and the charge collection efficiency from which it was shown that it is possible to find an expression to quantitatively measure the maximum charge collection efficiency in h-BN. The results introduce not only a coherent picture for the relationship between common impurities in h-BN and charge collection and trapping mechanisms but also useful insights into possible approaches to improve the quality, purity, and charge collection of the h-BN epilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗