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DOE OSTI2023

Combined Coherent Manipulation and Single-Shot Measurement of an Electron Spin in a Quantum Dot (Final Technical Report)

Semiconductor quantum dots (QDs) are promising candidates to act as single-photon sources and/or quantum bits in future optical quantum information applications. Their excellent optical properties such as high brightness, single-photon purity, and narrow linewidth have potential utility in many areas. One challenge is to control the energy levels of the QD without using a magnetic field. The AC Stark effect offers the opportunity to do this. We have demonstrated record-large AC Stark shifts of the energy states of a single charged QD. We showed that the shifts can be applied in a spin-selective manner by controlling the polarization of the laser producing the AC Stark effect. In order to characterize the effect, we developed a novel spectral filtering scheme to discriminate the high-power AC Stark laser from the QD fluorescence. We also developed a compact, low-cost, homemade polarimeter to help control the polarization of the AC Stark laser, which enabled the spin selectivity of the AC Stark effect. With the practical capabilities thus developed, we learned that the spin-selective AC Stark effect causes electron spin pumping, which in turn causes nuclear spin pumping via the hyperfine interaction. The nuclear spin pumping causes a mean field Zeeman interaction between the nuclear spin ensemble and the electron trapped in the QD, resulting in the so-called Overhauser shift. The magnitude of the Overhauser shift and the measured linewidth of the QD’s optical transitions enabled characterization of the mean nuclear spin polarization and fluctuations. The potentially rapid (ns-scale) control of the QD energy levels and nuclear spin polarization will enable measurements of electron and nuclear spin polarization in the absence of any real magnetic field, which is a completely unique capability. The ability to rapidly apply a spin-selective AC Stark effect in the presence of a weak real magnetic field will allow control of the polarization selection rules of the transitions, enabling all single-qubit operations on the electron spin, i.e., initialization, coherent manipulation, and quantum non-demolition measurement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Enhancement of Emission from Lanthanide Dopants in Perovskite Nanocrystals through a Temperature-Dependent Phase Transformation of the Perovskite Lattice

The excited states of lanthanide ions (Ln 3+ ) exhibit ultranarrow emission and long spin dephasing lifetimes suitable for optoelectronic and quantum applications but are not directly optically accessible. One effective strategy to excite Ln 3+ ions is to dope them into a semiconductor host lattice, which acts as a photosensitizer. This work describes enhancement of emission intensity by a factor of 19 with decreasing temperature (from 300 to S K) from Sm 3+ ions in CsPbCl 3 nanocrystal hosts. Structural characterization over the same temperature region reveals that this enhancement is primarily due to a symmetry-lowering cubic-to-orthorhombic phase transition of the host lattice, which reduces the local site symmetry of the dopant and increases the Sm 3+ * emission quantum yield.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges

The electrical performances of III-nitride blue micro-light-emitting diodes (µLEDs) with different tunnel junction (TJ) epitaxial architectures grown by metalorganic chemical vapor deposition are investigated. A new TJ structure that employs AlGaN is introduced. The current density–voltage characteristic is improved by incorporating AlGaN layer above the n-side of the TJ layer, and the effects of the AlGaN/GaN superlattices is examined. Based upon the data from band diagram simulation, net positive polarization charge is formed at the AlGaN/GaN interface, which results in a reduction in tunneling distance and increase in tunneling probability. Moreover, similar electrical improvement is observed in various device dimensions and is independent of operating current density, suggesting that AlGaN/GaN biaxial tensile strain or current spreading is not the main contribution for the improvement. Finally, the effects on the efficiency performances are determined. While the maximum external quantum efficiency of the TJ devices remains identical, the wall-plug efficiency of µLEDs is enhanced significantly by the proposed AlGaN-enhanced TJ design. This work reveals the possibility of energy efficient TJ contact with high transparency in the visible wavelength range.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Monolithic AlScN/SiC phononic waveguides for scalable acoustoelectric and quantum devices

Unlike conventional surface acoustic wave devices, phononic waveguide systems enable higher circuit density and stronger strain and piezoelectric fields, making them promising for advanced acoustoelectric and quantum applications. One such material system for generating and guiding phonons at gigahertz frequencies is AlScN on SiC, which can be synthesized by sputter depositing AlScN directly onto SiC wafers. The AlScN on the SiC platform allows for tightly vertically-confined acoustic modes with high electromechanical coupling, high speed of sound, and simple fabrication of strip and rib waveguides. Until now, this system has only been studied as a slab waveguide platform, i.e., without any lateral waveguiding. Here, we demonstrate a two-dimensionally confined phononic architecture in AlScN on SiC that supports guided modes at 2.95 and 4.05 GHz. These modes exhibit strong electromechanical coupling coefficients (k 2 = 4.27%) and propagation losses on the order of 10 dB/mm. Furthermore, this architecture is well-suited for phononic routing and power-efficient active or nonlinear devices such as amplifiers, mixers, and oscillators, and is compatible with the integration of quantum systems, including vacancy centers, charge carriers, photons, and spins, either embedded in SiC or heterogeneously integrated on the surface.

Electrical components↗

DOE OSTI2022

Enabling multiple intercavity polariton coherences by adding quantum confinement to cavity molecular polaritons

In this study, the “particle in a box” idea, which was broadly developed in semiconductor quantum dot research, was extended into mid-infrared (IR) cavity modes by applying lateral confinement in an optical cavity. The discrete cavity modes hybridized with molecular vibrational modes, resulting in a quartet of polariton states that can support multiple coherence states in the IR regime. We applied tailored pump pulse sequences to selectively prepare these coherences and verified the multi-coherence existence. The simulation based on Lindblad equation showed that because the quartet of polariton states resided in the same cavity, they were specifically robust toward decoherence caused by fluctuations in space. The multiple robust coherences paved the way for entangled states and coherent interactions between cavity polaritons, which would be critical for advancing polariton-based quantum information technology.

2D IR↗

DOE OSTI2021

All-epitaxial long-range surface plasmon polariton structures with integrated active materials

We demonstrate all-epitaxial structures capable of supporting short- and long-range surface plasmon polariton (SRSPP and LRSPP) modes in the long-wave infrared region of the electromagnetic spectrum. The SRSPP and LRSPP modes are bound to the interfaces of a buried heavily doped (n ++ ) semiconductor layer and surrounding quantum-engineered type-II superlattice (T2SL) materials. The surrounding T2SLs are designed to allow optical transitions across the frequency dispersion of the SPP modes. We map the SPP dispersion in our structure using grating-coupled angle- and polarization-dependent reflection and photoluminescence spectroscopy. The epitaxial structures are analytically described using a simplified three-layer system (T2SL/n ++ /T2SL) and modeled using rigorous coupled wave analysis with excellent agreement to our experimental results. The presented structures offer the potential to serve as long-range interconnects or waveguides in all-epitaxial plasmonic/optoelectronic systems operating in the long-wave infrared.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Spin-Orbit Interactions in Transdimensional Heterostructures (Final Technical Report)

A summary of the theory development for the fundamental understanding of intrinsic electronic processes and interactions in transdimensional heterostructures. The transdimensional regime lays in between three (3D) and two (2D) dimensions. Current research has been largely focused on purely 2D or conventional 3D materials, being guided by a traditional view that only the dimensionality and the chemical composition are important to control the physical properties of quantum materials. The transitional, transdimensional regime has been largely overlooked. The theoretical and experimental results reported herewith fill in this gap by providing the missing aspects of the spin-orbit interaction theory and the associated magneto-optical response for ultrathin films of metals and semiconductors in the transdimensional regime.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Optical activation and detection of charge transport between individual colour centres in diamond

Understanding the capture of charge carriers by colour centres in semiconductors is important for the development of novel forms of sensing and quantum information processing, but experiments typically involve ensemble measurements, often impacted by defect proximity. In this study, we show that confocal fluorescence microscopy and magnetic resonance can be used to induce and probe charge transport between individual nitrogen-vacancy centres in diamond at room temperature. In our experiments, a ‘source’ nitrogen vacancy undergoes optically driven cycles of ionization and recombination to produce a stream of photogenerated carriers, one of which is subsequently captured by a ‘target’ nitrogen vacancy several micrometres away. We use a spin-to-charge conversion scheme to encode the spin state of the source colour centre into the charge state of the target, which allows us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those measured in ensembles.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Iron dopant energy levels in β-Ga 2 O 3

The energetic positions of the two Fe dopant levels in the bandgap of β-Ga 2 O 3 are determined to be at 3.05(±0.05) and 3.85(±0.05) eV below the conduction band minimum from transmission measurements employing a sub-picosecond tunable ultraviolet laser radiation source. A further measurement of the quantum efficiency of photoelectron emission from the Fe:Ga 2 O 3 (010) photocathode is consistent with the obtained absorption data and a dominant optical phonon assisted Franck–Condon emission mechanism, while also providing an estimate of 100 ps for the conduction band electron lifetime.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2025

Third-order photon correlations extract single-nanocrystal multiexciton properties in solution

Colloidal semiconductor nanocrystals are considered promising materials for high-flux optical applications, including lasing, light-emitting diodes, biological imaging, and quantum optics. In high-flux applications, multiexcitons can significantly contribute to emission, influencing its brightness, spectral purity, and kinetics. As a result, understanding and controlling multiexciton emission in colloidal nanocrystal materials is of the utmost importance. In the past, single-nanocrystal photon correlation methods have been applied to understand biexciton and triexciton efficiencies, lifetimes, and spectra. While powerful, such methods suffer from user selection bias and require stable emission from single nanocrystals. To compensate for this shortcoming, second-order correlation methods were developed to extract sample-averaged biexciton properties from a solution of nanocrystals. Until now, however, the analogous third-order solution photon correlation methods remained unexplored. In this work, we present a pair of third-order photon correlation techniques to obtain the sample-averaged single-nanocrystal triexciton quantum yield and lifetime in a solution-phase experiment. These techniques derive from the relationship between the Poisson probability of nanocrystal photon absorption and the intrinsic probability of nanocrystal photon emission. We validate the theoretical background of these techniques by creating a numerical model to simulate the diffusion and emission of many nanocrystals in solution. Our simulations confirm that the average triexciton quantum yield and triexciton lifetime can be extracted from a solution of nanocrystals. These techniques will enable researchers to gain a better understanding of the fundamental multiexciton properties of colloidal nanocrystals.

Horowitz, Jonah R. [Massachusetts Institute of Tec↗

NASA NTRS1991

22 W coherent GaAlAs amplifier array with 400 emitters

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Krebs, D.↗

DOE OSTI2024

Phonon Screening of Excitons in Atomically Thin Semiconductors

Atomically thin semiconductors, encompassing both 2D materials and quantum wells, exhibit a pronounced enhancement of excitonic effects due to geometric confinement. Consequently, these materials have become foundational platforms for the exploration and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons. While excitonic properties of atomically thin semiconductors have been the subject of extensive theoretical investigations, the role of phonon screening on excitons in atomically thin structures remains unexplored. In this Letter, we demonstrate via ab initio GW-Bethe-Salpeter equation calculations that phonon screening can have a significant impact on optical excitations in atomically thin semiconductors. We further show that the degree of phonon screening can be tuned by structural engineering. We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton in monolayer GaN via screening. Our studies provide new intuition beyond standard models into the interplay among structural properties, phonon characteristics, and exciton properties in atomically thin semiconductors, and have implications for future experiments.

2-dimensional systems↗

DOE OSTI2022

Colloidal Quantum Dot Solar Cells: Progressive Deposition Techniques and Future Prospects on Large-area Fabrication

Colloidally grown nanosized semiconductors yield extremely high-quality optoelectronic materials. Many examples have pointed to near perfect photoluminescence quantum yields, meaning non-radiative optical processes (losses) can be completely suppressed allowing for technology-leading materials as high purity color centers in display technology and emitters in LEDs. Furthermore, because of high chemical yield, and improved understanding of the surfaces, these materials, particularly colloidal quantum dots (QDs) can also be ideal candidates for other optoelectronic applications. Given the strong drive toward carbon neutrality and limiting climate change, electricity from solar photovoltaics will play a large role in the power generation sector. QDs have been developed and shown dramatic improvements over the past 15 years as photoactive materials in photovoltaics and have unique potential with various innovative deposition properties which could lead to exceptionally low-cost and high-performance devices. Once the key issues related to charge transport in optically thick arrays are addressed, QD-based photovoltaic technology could become a better candidate for practical application. In this article, w e show how the possibilities of different deposition techniques could bring QD-based solar cells to the industrial level and discuss the challenges for perovskite QD solar cells in particular, to achieve large-area fabrication for further advancing technology to solve pivotal energy and environmental issues.

14 SOLAR ENERGY↗

DOE OSTI2022

Reduced photothermal heating in diamonds enriched with H3 point defects

Solid-state laser refrigeration of semiconductors remains an outstanding experimental challenge. In this work, we show that, following excitation with a laser wavelength of 532 nm, bulk diamond crystals doped with H3 centers both emit efficient up-conversion (anti-Stokes) photoluminescence and also show significantly reduced photothermal heating relative to crystals doped with nitrogen–vacancy (NV) centers. The H3 center in diamond is a highly photostable defect that avoids bleaching at high laser irradiances of 10–70 MW/cm 2 and has been shown to exhibit laser action, tunable over the visible band of 500–600 nm. Here, the observed reduction of photothermal heating arises due to a decrease in the concentration of absorbing point defects, including NV-centers. These results encourage future exploration of techniques for H3 enrichment in diamonds under high-pressure, high-temperature conditions for the simultaneous anti-Stokes fluorescence cooling and radiation balanced lasing in semiconductor materials. Reducing photothermal heating in diamond through the formation of H3 centers also opens up new possibilities in quantum sensing via optically detected magnetic resonance spectroscopy at ambient conditions.

42 ENGINEERING↗

NASA NTRS2007

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Hu, Qing↗

NASA NTRS2009

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

Hu, Qing↗

NASA NTRS1992

Stimulated electronic transition concept for an erasable optical memory

A new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. The properties of MgS:Eu,Sm and SrS:Eu,Sm as possible media for the SET process are investigated. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.

Albin, Sacharia↗

DOE OSTI2026

Predicting Open Quantum Dynamics with Data-Informed Quantum-Classical Dynamics

We introduce a data-informed quantum-classical dynamics (DIQCD) approach for predicting the evolution of an open quantum system. The equation of motion in DIQCD is a Lindblad equation with a flexible, time-dependent Hamiltonian that can be optimized to fit sparse and noisy data from local observations of an extensive open quantum system. We demonstrate the accuracy and efficiency of DIQCD for both experimental and simulated quantum devices. We show that DIQCD can predict entanglement dynamics of ultracold molecules (calcium fluoride) in optical tweezer arrays. DIQCD also successfully predicts carrier mobility in organic semiconductors (rubrene) with accuracy comparable to nearly exact numerical methods.

Lindblad equation↗