Lifetime requirements for semiconductor lasers in inertial fusion energy systems
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Lasers↗
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Results for “semiconductor lasers”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Modeling the Cost of Semiconductor Laser Diodes for IFE Driver Applications
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Business and economics↗
Development and planning and design of equipment pumping generator of semiconductor lasers
The schematic of a multidimensional current pulse generator is studied. A MTKh-90 cold cathode thyratron is used as the current commutator. In the autooscillation mode on a frequency of 380 hertz the generator creates a current to 100 amps per pulse in a control resistance of 1 ohm. The pulse duration is regulated within the limits from 0.1 to 3.0 microseconds.
Popkov, A. V.↗
Formation of internally-confined semiconductor lasers
In technique for fabrication of strip lasers, current constriction is accomplished by diffusing blocking regions into n-type substrate prior to growth. Current flow is controlled by blocking layers, which results in reduction of threshold current and better heat dissipation.
Cannuli, V. M.↗
Spatially-coherent coupled semiconductor lasers
External cavity for monolithic array of three GaAs lasers phase-coherently couples individual outputs to produce single spatially coherent beam. Fourier transform properties of lens and spatial filter are used to select coherent mode.
Rutz, E. M.↗
Advanced development of Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region
The technology was studied for producing Pb-salt diode lasers for the 8-51 micron spectral region suitable for use as local oscillators in a passive Laser Heterodyne Spectrometer (LHS). Consideration was given to long range NASA plans for the utilization of the passive LHS in a space shuttle environment. The general approach was to further develop the method of compositional interdiffusion (CID) recently reported, and used successfully at shorter wavelength. This technology was shown to provide an effective and reproducible method of producing a single-heterostructure (SH) diode of either the heterojunction or single-sided configuration. Performance specifications were exceeded in several devices, with single-ended CW power outputs as high as 0.88 milliwatts in a mode being achieved. The majority of the CID lasers fabricated had CW operating temperatures of over 60K; 30% of them operated CW above the boiling temperature of liquid nitrogen. CW operation above liquid nitrogen temperature was possible for wavelengths as long as 10.3 microns. Operation at 77K is significant with respect to space shuttle operations since its allows considerable simplification of cooling method.
Linden, K. J.↗
Excess noise in Pb(1-x)Sn(x)Se semiconductor lasers
The noise characteristics of the TDL were studied for frequencies less than 20 kHz. For heterodyne applications, the high frequency ( 1 MHz) characteristics are also important. Therefore, the high frequency noise characteristics of the TDL were studied as a part of a full TDL characterization program which has been implemented for the improvement of the TDL as a local oscillator in the LHS system. It was observed that all the devices showed similar high frequency noise characteristics even though they were all constructed using different techniques. These common high frequency noise characteristics are reported.
Harward, C. N.↗
Picosecond optical pulse generation at gigahertz rates by direct modulation of a semiconductor laser
We report the generation of picosecond pulses by the direct modulation of a buried heterostructure GaAlAs diode laser. Pulse width of 28 ps is achieved at a repetition frequency of 2.5 GHz. Pulse width dependence on the experimental parameters is described.
Auyeung, J.↗
Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region
Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.
Miller, M. D.↗
Power combining of semiconductor lasers: A review
Several methods of coherent power combining are described and compared. A comparison is also made between coherent and incoherent power combining, and important operational characteristics are considered. It is found that in communication links with demanding requirements coherent power combining is necessary.
Katz, J.↗
Transient behavior of an actively mode-locked semiconductor laser diode
Experimental investigation was carried out to study the transient regimes during the buildup and decay of the active mode-locked state in a laser diode. The mode locking was achieved through a sinusoidal modulation of the diode current with the laser in an external cavity. The pulse shape evolution and the time constants for the buildup and decay were determined.
Auyeung, J. C.↗
Semiconductor Laser Phased Array
Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.
Katz, J.↗
Coupling mechanism of gain-guided integrated semiconductor laser arrays
It is shown that a gain-guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. It is shown that these phase-locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain-guided lasers is discussed.
Kapon, E.↗
Coupled parallel waveguide semiconductor laser
The operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated. One of the cavities ('control' cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser. With a minor modification, the same device can operate as an independent two-wavelength laser source.
Katz, J.↗
Single contact tailored gain phased array of semiconductor lasers
A single contact tailored gain-guided array is demonstrated in which the gain profile across the array is made strongly asymmetric by varying the width of the contact stripes. A proton isolated arary of six (GaAl)As lasers with 5-micron separations and widths varying linearly between 3 and 8 microns had a single lobed far field 2 deg wide, close to the diffraction limit for a single supermode. Fabrication of this device is simple, and suited to large-scale processing techniques. It is also shown that in such an asymmetric gain-guided array the fundamental mode is favored over higher order modes, and that higher order modes can have single lobed far-field patterns differing only slightly from that of the fundamental.
Lindsey, C. P.↗
Nd:YAG end pumped by semiconductor laser arrays for free space optical communications
Preliminary experimental results are reported for a diode-pumped Nd:YAG laser employing a tightly focused end-pump geometry. The resonator configuration is planoconcave, with the pumped end of the Nd:YAG rod being coated for high reflection at 1.06 microns. This geometry rectifies nearly all the inefficiencies plaguing side-pumped schemes. This laser is further considered as a candidate for optical communication over the deep space channel.
Sipes, D. L., Jr.↗
Direct analysis of gain-guided phase-locked semiconductor laser arrays
A method for analyzing arbitrary one-dimensional waveguides is described and applied to find the lateral modes of gain-guided laser arrays directly, without the need for a coupled-mode approximation. Detailed results are given for a four-element array for which experimental results are available, and the effect of varying device parameters on the relative gains of the modes is considered. The results show differences between gain-guided and real-index guided arrays which are not evident in prior analyses.
Marshall, W. K.↗
Tunable Dual Semiconductor Laser
Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.
Mukai, Seiji↗