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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Schottky Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

semiconducting↗

Feasibility of Micro-Multilayer Multifunctional Electrical Insulation (MMEI) System for High Voltage Applications

The newly patented micro-multilayer multifunctional electrical insulation (MMEI) system was developed for future electric aircraft applications which critically require lightweight but high voltage (HV), high temperature, and corona or partial discharge (PD) resistant insulation. During the initial development stages, the concept and practicability of the MMEI system were successfully validated with its exceptionally high dielectric breakdown voltages. The multilayer structures were optimized in terms of material type, individual layer thickness, and overall layer configuration along with potential mechanisms identified for its superior performance. Subsequently, scalability, manufacturability, and commercial applicability of the MMEI system were demonstrated with the 1 meter long, 3-phase HV, high power (HP) bus bar prototypes. Two prototypes, one with the conventional SOA insulation system including Mica sheet and the other with an optimized MMEI, were designed, fabricated, and tested successfully. Both prototypes passed both HiPot and PD tests up to the highest test voltage available, 15 kVAC, although the latter showed a slight increase in PD activities at 12.5 kV. However, the prototype with MMEI was 15% lighter or 12% thinner than the other one. Current efforts to significantly enhance the PD resistance of the MMEI system by employing semiconductive shielding layers, which can be also multifunctional, e.g., electromagnetic interference shielding, moisture blocking, heat dissipation, for various HV applications are also discussed in this paper.

Novel Electrical Insulation↗

Feasibility of Micro-Multilayer Multifunctional Electrical Insulation (MMEI) System for High Voltage Applications

The newly patented micro-multilayer multifunctional electrical insulation (MMEI) system was developed for future electric aircraft applications which critically require lightweight but high voltage (HV), high temperature, and corona or partial discharge (PD) resistant insulation. During the initial development stages, the concept and practicability of the MMEI system were successfully validated with its exceptionally high dielectric breakdown voltages. The multilayer structures were optimized in terms of material type, individual layer thickness, and overall layer configuration along with potential mechanisms identified for its superior performance. Subsequently, scalability, manufacturability, and commercial applicability of the MMEI system were demonstrated with the 1 meter long, 3-phase HV, high power (HP) bus bar prototypes. Two prototypes, one with the conventional SOA insulation system including Mica sheet and the other with an optimized MMEI, were designed, fabricated, and tested successfully. Both prototypes passed both HiPot and PD tests up to the highest test voltage available, 15 kVAC, although the latter showed a slight increase in PD activities at 12.5 kV. However, the prototype with MMEI was 15% lighter or 12% thinner than the other one. Current efforts to significantly enhance the PD resistance of the MMEI system by employing semiconductive shielding layers, which can be also multifunctional, e.g., electromagnetic interference shielding, moisture blocking, heat dissipation, for various HV applications are also discussed in this paper.

Novel Electrical Insulation↗

Radiation-detector optical-imaging device is of simplified construction

A simplified radiation detector was designed which employs an activated continuous front surface consisting of either the diffused or barrier type of semiconducting material with a grid structure on the nonactivated side of the detector. Its form may be either a rectangular coordinate or a polar coordinate system.

Source record↗

Miniature stress transducer has directional capability

Miniature stress transducer uses a semiconductive piezoresistive element to detect stress only on specific axes. Measurement of internal mass stress is based on the compressive deformation of the transducer. The device is applicable to constant stress monitoring in building and dam structural parts.

San Miguel, A.↗