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At least 109 records · Page 6

Large room-temperature elastocaloric effect in a bulk polycrystalline Ni-Ti-Cu-Co alloy with low isothermal stress hysteresis

Creation of high-performance advanced elastocaloric materials is essential for the execution of elastocaloric refrigeration that can be an environment-friendly and high-efficiency substitute for the widely used traditional vapor-compression cooling technology. Here we have developed a bulk polycrystalline Ni-Ti-Cu-Co shape memory alloy exhibiting large elastocaloric effect, low stress hysteresis and room temperature working temperature, all of which are of great importance to and urgently demanded for high-efficiency room-temperature elastocaloric refrigeration. This newly developed (Ni 42.5 Ti 50 Cu 7.5 ) 99 Co 1 alloy shows a large room-temperature elastocaloric effect with directly measured adiabatic temperature change up to -14.4 K during unloading. The stress hysteresis of the isothermal superelastic stress-strain curve is as low as 60 MPa when the maximum tensile strain is 2.7%. Owing to the large elastocaloric effect and low stress hysteresis, a very high coefficient of performance up to 19 is achieved on the material level. This newly developed (Ni 42.5 Ti 50 Cu 7.5 ) 99 Co 1 alloy is a robust candidate for efficient elastocaloric refrigeration. Advanced in-situ synchrotron high-energy X-ray diffraction technique was employed to reveal the phase transformation sequence and to accurately determine the crystal structure of different phases, based on which the lattice compatibility between the transforming phases was evaluated and the phase transformation strain was predicted, providing in-depth fundamental understanding of the martensitic transformation in this newly developed alloy. This work could be useful for designing high-performance elastocaloric materials for solid-state cooling applications.

36 MATERIALS SCIENCE↗

Single Event Effects on Space Radiation Hardened 64K SRAMS at Room temperature

The laser threshold linear Energy transfer for single event upsetscan be estimaed, even at room temperature, for space radiation hardened 64K SRAMs. The memories where independently developed to quality for the Qualified Manufacturer's List by IBM and Honeywell. The memory was so hard that high energy heavy ions generated by the Van de Graff could not determine the SEU threshold at room temperature. Use of pulsed Laser tests would meake it possible to forgo very expensive testing at ultra-high energy accelerators.

Space Radiation 64K SRAMS↗

Thermal properties measurement of TRISO particle coatings from room temperature to 900 °C using laser-based thermoreflectance methods

The thermal properties of tristructural isotropic (TRISO) particle coatings have been measured using laser-based thermoreflectance methods from room temperature to 900 °C. At room temperature the pyrocarbon coatings have comparable thermal conductivities below 10 W·m -1 ·K -1 , whereas the SiC coating has a thermal conductivity around 90 W·m -1 ·K -1 . The thermal diffusivities of all coatings display significant reduction with increasing temperature. Finally, the thermal conductivity of SiC decreases by more than 25% above 800 °C and the thermal conductivities of pyrocarbons increase moderately with the temperature, displaying similar changes to that of amorphous graphite at elevated temperatures.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor

Abstract Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin‐polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto–electric or magneto–optical devices, especially for two‐dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room‐temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room‐temperature ferromagnetic order obtained in semiconducting vanadium‐doped tungsten disulfide monolayers produced by a reliable single‐step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p‐type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of ~2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium–vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first‐principles calculations. Room‐temperature 2D‐DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.

36 MATERIALS SCIENCE↗

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Brown, E. R.↗

Ultra-Low-Cost Room Temperature SiC Thin Films

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Faur, Maria↗

Influence of testing environment on the room temperature ductility of FeAl alloys

The effects of testing atmospheres (air, O2, N2, and vacuum) on the room-temperature ductility of Fe-40Al, Fe-40Al-0.5B, and Fe-50Al alloys were investigated. The results confirmed the decrease in room-temperature ductility of Fe-rich FeAl alloys by the interaction of the aluminide with water vapor, reported previously by Liu et al. (1989). The highest ductilities were measured in the atmosphere with the lowest moisture levels, i.e., in vacuum. It was found that significant ductility is still restricted to Fe-rich alloys (Fe-40Al), as the Fe-50Al alloy remained brittle under all testing conditions. It was also found that slow cooling after annealing was beneficial, and the effect was additive to the environmental effect. The highest ductility measurements in this study were 9 percent elongation in furnace-cooled Fe-40Al and in Fe-40Al-0.5B, when tested in vacuum.

Gaydosh, D. J.↗

Sub-1K Cold-Electron Quantum Well Switching at Room Temperature

Quantum states can provide means to systematically manipulate the transport of electrons. Here, in this study, we present electron transport across quasi-bound states of two heterogeneous quantum wells (QWs), where the transport of thermally excited electrons is blocked or enabled depending on the relative positions of the two quasi-bound states, with an abrupt current onset occurring when the two QW states align. The QW switch comprises a source (Cr), QW1 (Cr 2 O 3 ), QW2 (SnO x , x < 2), a tunneling barrier (SiO 2 ), and a drain (Si), where the effective electron mass of QW1 (m* QW1 ) is selected to be larger than QW2 (m* QW2 ). The current-voltage (I-V) measurements of the fabricated devices show abrupt current onsets, with the current transition occurring within 0.25 mV, corresponding to an effective electron temperature of 0.8 K at room temperature. Since transistor power consumption is fundamentally tied to effective electron temperature, this sub-1K cold-electron QW switching holds promise for highly energy-efficient computing.

Fermi−Dirac thermal smearing↗

Sensing performance of sub-100-nm vanadium oxide films for room temperature thermal detection applications

Vanadium oxide films are widely employed as thermal detectors in uncooled infrared detection systems due to their high temperature coefficient of resistance near room temperature. One strategy toward maximizing detectivity and reducing the thermal time constant in these systems is to minimize the system platform dimensions. This approach necessitates thinner film thicknesses ([Formula: see text]100 nm), for which there is little information regarding thermal sensing performance. Herein, we report on the sensitivity of reactively sputtered vanadium oxide thin film resistive thermometers nominally ranging from 100 to 25 nm and assess the influence of thermal annealing. Here we demonstrate that films in this minimum limit of thickness maintain a high temperature coefficient while additionally providing an enhancement in characteristics of the noise equivalent power.

36 MATERIALS SCIENCE↗

A study of low-noise preamplifier systems for use with room temperature mercuric iodide /HgI2/ X-ray detectors

An analysis of different preamplification systems for use with room temperature mercuric iodide X-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution values of 295 eV (FWHM) for an Fe-55 source (5.9 keV) and 225 eV (FWHM) for a pulser have been obtained with both the detector and the input FET at room temperature using a pulsed-light feedback preamplifier. Improvement in energy resolution by cooling the input FET using a small Peltier element has been discussed.

Iwanczyk, J. S.↗

Impact of substrates and quantum effects on exciton line shapes of 2D semiconductors at room temperature

Exciton resonances in monolayer transition-metal dichalcogenides (TMDs) provide exceptionally strong light–matter interaction at room temperature. Their spectral line shape is critical in the design of a myriad of optoelectronic devices, ranging from solar cells to quantum information processing. However, disorder resulting from static inhomogeneities and dynamical fluctuations can significantly impact the line shape. Many recent works experimentally evaluate the optical properties of TMD monolayers placed on a substrate and the line shape is typically linked directly to the material’s quality. Here, we highlight that the interference of the substrate and TMD reflections can strongly influence the line shape. We further show how basic, room-temperature reflection measurements allow investigation of the quantum mechanical exciton dynamics by systematically controlling the substrate reflection with index-matching oils. By removing the substrate contribution with properly chosen oil, we can extract the excitonic decay rates including the quantum mechanical dephasing rate. The results provide valuable guidance for the engineering of exciton line shapes in layered nanophotonic systems.

2D semiconductor↗

Room temperature tensile ductility in powder processed B2 FeAl alloys

It has been shown that it is possible to obtain significant room temperature tensile ductility in FeAl alloys using iron-rich deviations from stoichiometry. A comparison of the room temperature tensile and compressive behaviors of Fe-50 at. pct Al and Fe-40 at. pct Al shows that FeAl is brittle at higher Al contents because it fractures along grain boundaries before general yielding. Lower aluminum contents reduce the yield stress substantially and hence some ductility is observed before fracture. Addition of boron results in measurable improvements in ductility of Fe-40 at. pct Al and is accompanied by an increase in transgranular tearing on the fracture surface, suggesting a grain boundary strengthening mechanism. Increasing the cooling rate following annealing at 1273 K results in a large increase in the yield strength and a corresponding decrease in ductility.

Crimp, M. A.↗

Propane Activation on Pt Electrodes at Room Temperature: Quantification of Adsorbate Identity and Coverage

Abstract C−H bond activation is the first step in manufacturing chemical products from readily available light alkane feedstock and typically proceeds via carbon‐intensive thermal processes. The ongoing emphasis on decarbonization via electrification motivates low‐temperature electrochemical alternatives that could lead to sustainable chemicals production. Platinum (Pt) electrocatalysts have shown activity towards reacting alkanes; however, little is known about propane electrocatalytic activation and conditions suitable for enabling selective oxidation to valuable products. Herein, we utilize a combination of electrochemical mass spectrometry (ECMS) and density functional theory (DFT) calculations to elucidate the potential dependence of propane activation on Pt electrocatalysts. Results show a strong dependence of adsorption on the applied potential in room‐temperature aqueous acidic electrolyte, with a maximum coverage of propane‐derived adsorbates at 0.30 V vs RHE. Using charge deconvolution and deuterated experiments, the mechanism of adsorption was elucidated, and C 3 H 2 * was determined as the average dehydrogenated propane‐derived adsorbate species. DFT calculations further corroborate these results, showing that the formation of deeply dehydrogenated species is energetically accessible at room temperature. The combined theoretical and experimental findings yield insights for selective activation of paraffinic C−H bonds at room temperature, aqueous conditions—a critical step towards decarbonized chemical manufacturing.

Chemistry↗

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO 3 , a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of Y Fe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.

36 MATERIALS SCIENCE↗

Ambient pressure X-ray photoelectron spectroscopy study of room-temperature oxygen adsorption on Cu(1 0 0) and Cu(1 1 1)

We investigated the room-temperature chemisorption of oxygen on Cu(1 0 0) and Cu(1 1 1) using ambient-pressure X-ray photoelectron spectroscopy (APXPS). A shoulder-to-shoulder comparison between the oxygen-gas titration on the two surfaces reveals that Cu(1 0 0) is the more active for oxygen dissociative chemisorption when the surfaces are clean. The (2 $\sqrt{2}$ × $\sqrt{2}$)R45o missing-row reconstruction appears in Cu(1 0 0)’s LEED image after about 10 4 Langmuir of oxygen exposure, whereas on Cu(1 1 1), no long-range ordering was observed throughout the whole experiment. An oxide layer consisting of cuprous and cupric oxide shows up on Cu(1 1 1) at an oxygen exposure that is significantly lower than for Cu(1 0 0). This observation suggests that the presence of (2 $\sqrt{2}$ × $\sqrt{2}$)R45o missing-row reconstruction layer slows down Cu(1 0 0) oxidation. Literature has widely reported that surface morphology influences the copper oxidation process. This study provides an XPS demonstration that copper surface oxide formation in O 2 at room temperature depends on the surface crystallographic orientation.

36 MATERIALS SCIENCE↗

Characterizing the solid hydrolysis product, UF 4 (H 2 O) 2.5 , generated from neat water reactions with UF 4 at room temperature

Uranium tetrafluoride (UF 4 ) is an important intermediate in the production of UF 6 and uranium metal. Room temperature hydrolysis of UF 4 was investigated using a combination of Fluorine-19 nuclear magnetic resonance spectroscopy ( 19 F NMR), Raman and infrared spectroscopy, powder X-ray diffraction, and microscopy measurements. UF 4 (H 2 O) 2.5 was identified as the primary solid hydrolysis product when anhydrous UF 4 was stirred in deionized water. Static NMR and 19 F magic angle spinning NMR measurements revealed that a small amount of uranyl fluoride can also form when anhydrous UF 4 is left in water, although this species comprises less than 5% of the total sample with the remaining parts being UF 4 (H 2 O) 2.5 . Since UF 4 is generally considered to be stable under ambient conditions, these findings mark the first time that a room temperature reaction between UF 4 and water has been detected and analyzed without interference from additional chemical reagents. The Raman characterization of UF 4 (H 2 O) 2.5 presented herein is the first on record. Since UF 4 is one of the most used intermediates during chemical conversion of uranium ore to uranium metal for nuclear fuel and weapons, the results presented herein are applicable to numerous nuclear science fields where solid state detection of uranium is of value, including nuclear nonproliferation, nuclear forensics, and environmental remediation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of Space-Flight Compatible Room-Temperature Electronics for the Lynx X-Ray Microcalorimeter

We are studying the development of space-flight compatible room-temperature electronics for the Lynx x-ray microcalorimeter (LXM) of the Lynx mission. The baseline readout technique for the LXM is microwave SQUID multiplexing. The key modules at room temperature are the RF electronics module and the digital electronics and event processor (DEEP). The RF module functions as frequency converters and mainly consists of local oscillators and I/Q mixers. The DEEP performs demultiplexing and event processing, and mainly consists of field-programmable gate arrays, ADCs, and DACs. We designed the RF electronics and DEEP to be flight ready, and estimated the power, size, and mass of those modules. There are two boxes each for the RF electronics and DEEP for segmentation, and the sizes of the boxes are 13 in: × 13 in: × 9 in: for the RF electronics and 15.5 in: × 11.5 in: × 9.5 in: for the DEEP. The estimated masses are 25.1 kg∕box for the RF electronics box and 24.1 kg∕box for the DEEP box. The maximum operating power for the RF electronics is 141 W or 70.5 W∕box, and for the DEEP box is 615 W or 308 W∕box. The overall power for those modules is 756 W. We describe the detail of the designs as well as the approaches to the estimation of resources, sizes, masses, and powers.

Sakai, Kazuhiro↗