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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.

Birchenough, A. G.↗
NASA NTRS1974

A system to geometrically rectify and map airborne scanner imagery and to estimate ground area

A system of computer programs were developed which performs geometric rectification and line-by-line mapping of airborne multispectral scanner data to ground coordinates and estimates ground area. The system requires aircraft attitude and positional information furnished by ancillary aircraft equipment, as well as ground control points. The geometric correction and mapping procedure locates the scan lines, or the pixels on each line, in terms of map grid coordinates. The area estimation procedure gives ground area for each pixel or for a predesignated parcel specified in map grid coordinates. The results of exercising the system with simulated data showed the uncorrected video and corrected imagery and produced area estimates accurate to better than 99.7%.

Spencer, M. M.↗
NASA NTRS1974

SICLOPS - A system of computer programs for rectified mapping of airborne scanner imagery

This paper describes SICLOPS, a system of computer programs, which has been developed to perform geometrically corrected line-by-line mapping of airborne multispectral scanner data to ground coordinates and to estimate ground areas. As inputs, SICLOPS accepts aircraft attitude and positional information furnished by ancillary aircraft equipment, plus ground truth information giving the location, in map grid coordinates, of a number of recognizable landmarks on the ground. The geometric correction and mapping procedure locates the scan lines, or the pixels on each line, in terms of map grid coordinates. The area estimation procedure gives ground area for each pixel or for a predesignated parcel specified in map grid coordinates. The results of exercising the system with simulated data showed the uncorrected video and corrected imagery and produced area estimates accurate to better than 99.7%. Real input data, though prepared, have not yet been processed by the system.

Spencer, M. M.↗
NASA NTRS1980

The half-wave rectifier response of the magnetosphere and antiparallel merging

In some ways the magnetosphere behaves as if merging occurs only when the interplanetary magnetic field (IMF) is southward, and in other ways it behaves as if merging occurs for all IMF orientations. An explanation of this duality is offered in terms of a geometrical antiparallel merging model which predicts merging for all IMF orientations but magnetic flux transfer to the tail only for southward IMF. This is in contrast to previous models of component merging, where merging and flux transfer occur together for nearly all IMF orientations. That the problematic duality can be explained by the model is compelling evidence that antiparallel merging should be seriously considered in constructing theories of the merging process.

Crooker, N. U.↗
NASA NTRS1990

Hierarchical approach to reconstruct surfaces by using iteratively rectified imagery

A new approach to reconstruct the 3D surface of the object space from digital images is described. All the object points obtained by an automatic orientation procedure lead to a first approximation of the surface. Edges are computed for one image and matched to the other image by grey level correlation or least-squares matching through the scale space. To every discrete step in the scale space there exists the digital stereopair (image pyramid), the corresponding surface digital elevation model (DEM), and the warped images. The warped images in this discrete scale space representation correspond to digital orthophotos obtained from the DEMs that result from matching the image pyramid. The warped images will be used on every successive level in the image pyramid in order to reduce the foreshortening problems associated with any area-based matching method.

Schenk, Toni↗
NASA NTRS1998

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1986

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Edwards, Dean B.↗
NASA NTRS2006

Rectifying antenna and method of manufacture

In accordance with the present invention, an aperture rectenna is provided where the substrate is transparent and of sufficient mechanical strength to support the fabricated structure above it. An aperture antenna is deposited on the transparent substrate and a metal-insulator-metal (MIM) diode is constructed on top of the aperture antenna. There is an insulating layer between the aperture antenna metal and the metal ground plane optimized to maximize the collection of incident radiation. The top of the structure is capped with a metal ground plane layer, which also serves as the DC connection points for each rectenna element.

Bhansali, Shekhar↗
NASA NTRS2009

Magnetic-Field-Tunable Superconducting Rectifier

Superconducting electronic components have been developed that provide current rectification that is tunable by design and with an externally applied magnetic field to the circuit component. The superconducting material used in the device is relatively free of pinning sites with its critical current determined by a geometric energy barrier to vortex entry. The ability of the vortices to move freely inside the device means this innovation does not suffer from magnetic hysteresis effects changing the state of the superconductor. The invention requires a superconductor geometry with opposite edges along the direction of current flow. In order for the critical current asymmetry effect to occur, the device must have different vortex nucleation conditions at opposite edges. Alternative embodiments producing the necessary conditions include edges being held at different temperatures, at different local magnetic fields, with different current-injection geometries, and structural differences between opposite edges causing changes in the size of the geometric energy barrier. An edge fabricated with indentations of the order of the coherence length will significantly lower the geometric energy barrier to vortex entry, meaning vortex passage across the device at lower currents causing resistive dissipation. The existing prototype is a two-terminal device consisting of a thin-film su - perconducting strip operating at a temperature below its superconducting transition temperature (Tc). Opposite ends of the strip are connected to electrical leads made of a higher Tc superconductor. The thin-film lithographic process provides an easy means to alter edge-structures, current-injection geo - metries, and magnetic-field conditions at the edges. The edge-field conditions can be altered by using local field(s) generated from dedicated higher Tc leads or even using the device s own higher Tc superconducting leads.

Sadleir, John E.↗
DOE OSTI2021

Single-stage transmitter for wireless power transfer

A single-stage transmitter for wireless power transfer is provided. The transmitter includes a rectifier stage and an inverter stage sharing a first phase leg. The rectifier stage further includes a rectifying leg including two diodes connected in series, and a boost inductor coupling the first phase leg and the rectifying leg to an input port. The inverter stage further includes a second phase leg. Each phase leg includes two switches connected in series. The first and second phase legs are coupled to an output port. A bus capacitor is coupled across the first phase, second phase, and rectifying legs. A controller is programmed to determine first and second parameters, based on an output power at the output port, to simultaneously control the rectifier stage and the inverter stage to maintain constant bus voltage and achieve high power factor and low total harmonic distortion at the input port.

Costinett, Daniel Jes↗
NASA NTRS1977

Improved ground truth geoid for the GEOS-3 calibration area

The purpose of this investigation is to develop methods and procedures are reported for computing a detailed geoid to be used as geodetic ground truth for the calibration and verification of GEOS-3 altimeter data. The technique developed is based on rectifying the best available detailed geoid so that the rectified geoid will have correct scale, orientation, shape and position with respect to the geocenter. The approach involved the development of a mathematical model based on a second degree polynomial, in rectangular Cartesian coordinates, describing the geoid undulations at the control stations. A generalized least squares solution was obtained for the polynomial which describes the variation of the undulation differences between the control stations geoid and the gravimetric geoid. Three rectified geoid were determined. These geoids correspond to three sets of tracking station data: (1) WFC/C-band data; (2) GSFC/C-band data; and (3) OSU-275 data. The absolute accuracy of these rectified geoids is linearly correlated with the uncertainties of the tracking station coordinates and, to a certain extent, with those of the detailed geoid being rectified.

Mourad, A. G.↗
NASA NTRS2002

Rectenna for high-voltage applications

An energy transfer system is disclosed. The system includes patch elements, shielding layers, and energy rectifying circuits. The patch elements receive and couple radio frequency energy. The shielding layer includes at least one opening that allows radio frequency energy to pass through. The openings are formed and positioned to receive the radio frequency energy and to minimize any re-radiating back toward the source of energy. The energy rectifying circuit includes a circuit for rectifying the radio frequency energy into dc energy. A plurality of energy rectifying circuits is arranged in an array to provide a sum of dc energy generated by the energy rectifying circuit.

Epp, Larry W.↗
DOE OSTI2024

Analysis and Control of a Three-Port Converter with High-Frequency AC Link for Hybrid Unmanned/Autonomous Aerial Vehicles

In this study, a three-port resonant converter with a high-frequency isolation link for hybrid unmanned/autonomous aerial vehicle (UAV/AAV) applications is analyzed. The rectified engine-generator set output supplies the first input ports while the other is connected to a battery energy storage system. Input ports consist of half-bridge high-frequency inverters, whereas output port utilizes a semi-bridgeless active rectifier. This rectifier is formed by replacing rectifier low-side diodes with active switching devices. A phase-shift duty-cycle control is implemented for switching signals to regulate the power share and flow between ports. The proposed control system implemented achieves zero voltage switching (ZVS), reduces switching losses, and minimum current flow optimization ensures regulation in a wide range of output power. Compared to the existing bidirectional pulse width modulation (PWM) converters, the proposed system decreases the number of power conversion stages and provides centralized control without needing communications between the ports. The proposed control technique operating in closed-loop control achieves the power flow between ports under various load conditions. Finally, theoretical analysis demonstrates the proposed converter’s viability and laboratory experimental validations at 500 W full power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗
NASA NTRS1990

Silicon carbide semiconductor device fabrication and characterization

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Davis, R. F.↗