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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1970

Precision full-wave rectifier

Simplified circuit uses one operational amplifier and two precision resistors. The amplifier is operated open loop for switching and closed loop for linear gain, both simultaneously.

Deboo, G. J.↗
NASA NTRS1971

Design and analysis of an automatic method of measuring silicon-controlled-rectifier holding current

The design of an automated SCR holding-current measurement system is described. The circuits used in the measurement system were designed to meet the major requirements of automatic data acquisition, reliability, and repeatability. Performance data are presented and compared with calibration data. The data verified the accuracy of the measurement system. Data taken over a 48-hr period showed that the measurement system operated satisfactorily and met all the design requirements.

Maslowski, E. A.↗
NASA NTRS1971

Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.

Birchenough, A. G.↗
NASA NTRS1974

A system to geometrically rectify and map airborne scanner imagery and to estimate ground area

A system of computer programs were developed which performs geometric rectification and line-by-line mapping of airborne multispectral scanner data to ground coordinates and estimates ground area. The system requires aircraft attitude and positional information furnished by ancillary aircraft equipment, as well as ground control points. The geometric correction and mapping procedure locates the scan lines, or the pixels on each line, in terms of map grid coordinates. The area estimation procedure gives ground area for each pixel or for a predesignated parcel specified in map grid coordinates. The results of exercising the system with simulated data showed the uncorrected video and corrected imagery and produced area estimates accurate to better than 99.7%.

Spencer, M. M.↗
NASA NTRS1974

SICLOPS - A system of computer programs for rectified mapping of airborne scanner imagery

This paper describes SICLOPS, a system of computer programs, which has been developed to perform geometrically corrected line-by-line mapping of airborne multispectral scanner data to ground coordinates and to estimate ground areas. As inputs, SICLOPS accepts aircraft attitude and positional information furnished by ancillary aircraft equipment, plus ground truth information giving the location, in map grid coordinates, of a number of recognizable landmarks on the ground. The geometric correction and mapping procedure locates the scan lines, or the pixels on each line, in terms of map grid coordinates. The area estimation procedure gives ground area for each pixel or for a predesignated parcel specified in map grid coordinates. The results of exercising the system with simulated data showed the uncorrected video and corrected imagery and produced area estimates accurate to better than 99.7%. Real input data, though prepared, have not yet been processed by the system.

Spencer, M. M.↗
NASA NTRS1980

The half-wave rectifier response of the magnetosphere and antiparallel merging

In some ways the magnetosphere behaves as if merging occurs only when the interplanetary magnetic field (IMF) is southward, and in other ways it behaves as if merging occurs for all IMF orientations. An explanation of this duality is offered in terms of a geometrical antiparallel merging model which predicts merging for all IMF orientations but magnetic flux transfer to the tail only for southward IMF. This is in contrast to previous models of component merging, where merging and flux transfer occur together for nearly all IMF orientations. That the problematic duality can be explained by the model is compelling evidence that antiparallel merging should be seriously considered in constructing theories of the merging process.

Crooker, N. U.↗
NASA NTRS1990

Hierarchical approach to reconstruct surfaces by using iteratively rectified imagery

A new approach to reconstruct the 3D surface of the object space from digital images is described. All the object points obtained by an automatic orientation procedure lead to a first approximation of the surface. Edges are computed for one image and matched to the other image by grey level correlation or least-squares matching through the scale space. To every discrete step in the scale space there exists the digital stereopair (image pyramid), the corresponding surface digital elevation model (DEM), and the warped images. The warped images in this discrete scale space representation correspond to digital orthophotos obtained from the DEMs that result from matching the image pyramid. The warped images will be used on every successive level in the image pyramid in order to reduce the foreshortening problems associated with any area-based matching method.

Schenk, Toni↗
NASA NTRS1998

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1986

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Edwards, Dean B.↗