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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Use of CCSDS and OSI Protocols on the Advanced Communications Technology Satellite

Although ACTS (Advanced Communications Technology Satellite) provides an almost error-free channel during much of the day and under most conditions, there are times when it is not suitable for reliably error-free data communications when operating in the uncoded mode. Because coded operation is not always available to every earth station, measures must be taken in the end system to maintain adequate throughput when transferring data under adverse conditions. The most effective approach that we tested to improve performance was the addition of an 'outer' Reed-Solomon code through use of CCSDS (Consultative Committee for Space Data Systems) GOS 2 (a forward error correcting code). This addition can benefit all users of an ACTS channel including those applications that do not require totally reliable transport, but it is somewhat expensive because additional hardware is needed. Although we could not characterize the link noise statistically (it appeared to resemble uncorrelated white noise, the type that block codes are least effective in correcting), we did find that CCSDS GOS 2 gave an essentially error-free link at BER's (bit error rate) as high as 6x10(exp -4). For users that demand reliable transport, an ARQ (Automatic Repeat Queuing) protocol such as TCP (Transmission Control Protocol) or TP4 (Transport Protocol, Class 4) will probably be used. In this category, it comes as no surprise that the best choice of the protocol suites tested over ACTS was TP4 using CCSDS GOS 2. TP4 behaves very well over an error-free link which GOS 2 provides up to a point. Without forward error correction, however, TP4 service begins to degrade in the 10(exp -7)-10(exp -6) range and by 4x10(exp -6), it barely gives any throughput at all. If Congestion Avoidance is used in TP4, the degradation is even more pronounced. Fortunately, as demonstrated here, this effect can be more than compensated for by choosing the Selective Acknowledgment option. In fact, this option can enable TP4 to deliver some throughput at error rates as high as 10(exp -5).

Chirieleison, Don↗
NASA NTRS1993

Ceramic fibers from Si-B-C polymer precursors

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.

Riccitiello, S. R.↗
NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗
NASA NTRS2005

Evolvable hardware system at extreme low temperatures

This paper describes circuit evolutionary experiments at extreme low temperatures, including the test of all system components at this extreme environment (EE). In addition to hardening-by-process and hardening-by-design, 'hardening-by-reconfiguration ', when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive selfreconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. This paper demonstrates this technique for circuit evolution and recovery at liquid nitrogen temperatures (-196.6 (deg)C). In addition, preliminary tests are performed to assess the survivability limitations of the evolutionary processor at extreme low temperatures.

evolvable harware↗
NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments: Problem or Solution?

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). In addition to hardening-by-process and hardening-by-design, "hardening-by-reconfiguration", when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive self-reconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Partly degraded resources are still used, while completely damaged resources are bypassed. Designs suitable for various environmental conditions can be determined prior to operation or can be determined in-situ, by adaptive reconfiguration algorithms running on built-in digital controllers. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfigurable devices were exposed to, and degraded by, low temperatures (approx. 196 C), high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms. Taking this technology from Technology Readiness Level (TRL) 3 to TRL 5 is the target of a current NASA project.

Field Programmable Transistor Array (FPTA)↗
NASA NTRS1975

Development of restraint material and tucked fabric joints

A study was conducted to evaluate and select a suitable restraint material for the exterior of space suits pressurized to 4.0 PSID for normal operations, and to develop and improve tucked fabric joints for motions associated with the human shoulder, elbow, knee, waist, hip, ankle, and wrist. The many attributes of the end items are summarized to include structural integrity, simplicity, low maintenance, lightweight, high durability, low elongation, full range mobility, long life, and resistance to degradation in the operational environment.

Mcmullen, J. M.↗
NASA NTRS1984

Reliability physics

Speakers whose topics relate to the reliability physics of solar arrays are listed and their topics briefly reviewed. Nine reports are reviewed ranging in subjects from studies of photothermal degradation in encapsulants and polymerizable ultraviolet stabilizers to interface bonding stability to electrochemical degradation of photovoltaic modules.

Cuddihy, E. F.↗
NASA NTRS1988

Geological remote sensing signatures of terrestrial impact craters

Geological remote sensing techniques can be used to investigate structural, depositional, and shock metamorphic effects associated with hypervelocity impact structures, some of which may be linked to global Earth system catastrophies. Although detailed laboratory and field investigations are necessary to establish conclusive evidence of an impact origin for suspected crater landforms, the synoptic perspective provided by various remote sensing systems can often serve as a pathfinder to key deposits which can then be targetted for intensive field study. In addition, remote sensing imagery can be used as a tool in the search for impact and other catastrophic explosion landforms on the basis of localized disruption and anomaly patterns. In order to reconstruct original dimensions of large, complex impact features in isolated, inaccessible regions, remote sensing imagery can be used to make preliminary estimates in the absence of field geophysical surveys. The experienced gained from two decades of planetary remote sensing of impact craters on the terrestrial planets, as well as the techniques developed for recognizing stages of degradation and initial crater morphology, can now be applied to the problem of discovering and studying eroded impact landforms on Earth. Preliminary results of remote sensing analyses of a set of terrestrial impact features in various states of degradation, geologic settings, and for a broad range of diameters and hence energies of formation are summarized. The intention is to develop a database of remote sensing signatures for catastrophic impact landforms which can then be used in EOS-era global surveys as the basis for locating the possibly hundreds of missing impact structures. In addition, refinement of initial dimensions of extremely recent structures such as Zhamanshin and Bosumtwi is an important objective in order to permit re-evaluation of global Earth system responses associated with these types of events.

Garvin, J. B.↗
NASA NTRS1990

On the nature and rate of resurfacing of Venus

Crrater production and obliteration are modeled for the plains of Venus, using (1) the observed distribution of Venus-crossing asteroids and comets; (2) viscous relaxation of crater topography; and (3) erosion and burial by atmospheric, volcanic, and tectonic processes. Crater lifetimes are assumed to be proportional to crater depths for both classes of obliterative processes although the individual criteria vary. An average crater retention age between 0.4 to 2.0 Gyr is estimated for plains, under the assumption that craters are produced and not removed. The range is driven by uncertainty in identifying degraded impact as opposed to volcanic craters. On the other hand, crater retention ages greater than about 1.6 Gyr are unlikely if viscous relaxation operates without loading of crater floor by burial. The preferred model has plains subject to crater production and obliteration processes that vary over both space and time.

Arvidson, Raymond E.↗
NASA NTRS2006

Material Interactions with Solar Wind Ion Environments

Solar wind composition is dominated by hydrogen (approx.96%) and helium (approx.3 to 4%) with a minor fraction (less than or equal to 1%) of heavy ions. Hydrogen (helium) ions impact spacecraft surfaces with energies from 0.5 to 5 keV (1.8 to 21 keV) due to variations in solar wind velocity from 300 km/s to 1000 km/sec with extremes of a few 10 s keV during periods of extremely high solar wind velocity exceeding 1000 km/sec. Mean impact energies are typically on the order of approximately 1 keV and 4 keV for hydrogen ions and helium ions, respectively. These energies are typically of the peak of the energy dependent light ion sputter yields for hydrogen and helium on many metals. In addition, light ions with kilovolt energies have been shown to produce blister (or exfoliation) damage to metal surfaces due to formation of high pressure gas bubbles within the materials when exposed to ion fluences on the order of 10(exp 16 to (10(exp 17 ions/sq cm. A number of spacecraft designs for current and future missions include gossamer polymer structures with thin metallic reflection coatings to shield instruments from the Sun or solar sail propulsion systems for use in a variety of locations in the inner solar system from 0.5 to 1 AU. In addition, there is interest in designing spacecraft for solar physics missions requiring operations as close to the Sun as 0.16 to 0.2 AU. Integrity of the metallic coatings is critical in many of these applications since degradation will result in modification of material thermal properties or exposure of polymers to solar UV photons which can compromise mission requirements. This paper will evaluate the relative contributions of sputtering and blister formation to material degradation in solar wind environments over a range of radial distances from the Sun to demonstrate where solar wind environments become important for materials selection. We will first review the physics and results from laboratory measurements of light ion sputtering, blistering, and exfoliation of metallic surfaces to establish the order of magnitude ion fluence required for significant surface damage. Solar wind ion fluence environments will then be evaluated due to variations in solar wind conditions as a function of solar cycle for varying distances from the Sun using models for radial variations in solar wind ion number density, temperature, and velocity to determine where sputtering and blistering is most likely to be an issue. Finally, ion fluence statistics for varying radial distances from the Sun will be shown to establish the mission duration and radial distances from the Sun where missions will encounter sufficient ion fluence to exhibit damage to metallic surfaces.

Minow, Joseph I.↗
NASA NTRS2008

Metrology Optical Power Budgeting in SIM Using Statistical Analysis Techniques

The Space Interferometry Mission (SIM) is a space-based stellar interferometry instrument, consisting of up to three interferometers, which will be capable of micro-arc second resolution. Alignment knowledge of the three interferometer baselines requires a three-dimensional, 14-leg truss with each leg being monitored by an external metrology gauge. In addition, each of the three interferometers requires an internal metrology gauge to monitor the optical path length differences between the two sides. Both external and internal metrology gauges are interferometry based, operating at a wavelength of 1319 nanometers. Each gauge has fiber inputs delivering measurement and local oscillator (LO) power, split into probe-LO and reference-LO beam pairs. These beams experience power loss due to a variety of mechanisms including, but not restricted to, design efficiency, material attenuation, element misalignment, diffraction, and coupling efficiency. Since the attenuation due to these sources may degrade over time, an accounting of the range of expected attenuation is needed so an optical power margin can be book kept. A method of statistical optical power analysis and budgeting, based on a technique developed for deep space RF telecommunications, is described in this paper and provides a numerical confidence level for having sufficient optical power relative to mission metrology performance requirements.

stellar interferometry↗
NASA NTRS1981

Aerodynamic measurements concerned with a turret model

An experimental investigation was carried out in the 14 by 14 ft Ames transonic wind tunnel on a turret model. The aerodynamic parameters measured were steady and unsteady pressures (static and total fluid pressures), local mean velocities, and local mean densities at selected locations along the optical beam path for the azimuth look angles of 90, 120, and 150 degrees from the turret. The test stream Mach numbers considered are 0.55, 0.65 and 0.75, and the Reynolds number per meter is in the range of 10 million. The results indicate that severe optical degradation can be expected at aft look azimuth, angles, this degradation in optical performance increases as the azimuth angle is increased. The ratio of rms static pressure to the local mean static pressure peaks in the range of 0.07 to 0.12 and the ratio of rms total pressure to the local mean total pressure peaks in the range of 0.02 to 0.04. These values depend on the Mach number and the aft look azimuth angle. The scale lengths obtained from correlation considerations are also presented.

Raman, K. R.↗
NASA NTRS2011

Variable Depth Bragg Peak Method for Single Event Effects Testing

Traditionally, accelerator SEE testing is accomplished by removing the tops of packages so that the IC chips are accessible to heavy ions. However, ICs in some advanced packages cannot be de-lidded so a different approach is used that involves grinding and/or chemically etching away part of the package and the chip from the back side. The parts are then tested from the back side with ions having sufficient range to reach the sensitive volume. More recently, the entire silicon substrate in an SOI/SRAM was removed, making it possible to use low-energy ions with shorter ranges. Where removal of part of the package is not possible, facilities at Michigan State, NASA Space Radiation Laboratory, GANIL (France) and GSI (Germany) offer high-energy heavy ions with long ranges so that the ions can reach the devices' sensitive volumes without much change in the LET. Unfortunately, a run will typically involve only one ion species having a single energy and LET due to the long time it takes to tune a new energy. The Variable Depth Bragg Peak (VDBP) method is similar to the above method in that it involves the use of high-energy heavy ions that are able to pass through the packaging material and reach the device, obviating the need to remove the package. However, the method provides a broad range of LETs from a single ion by inserting degraders in the beam that modify the ion energy and, therefore, the LET. The crux of the method involves establishing a fiduciary point for degrader thickness, i.e., where the Bragg peak is located precisely at the sensitive volume in the device, for which the measured SEU cross-section and the ion LET are both also maxima and can be calculated using a Monte-Carlo program, TRIM. Once the fiduciary point has been established, calibrated high density polyethylene (HDPE) degraders are inserted into or removed from the beam to vary the ion LET at the device in a known manner. After each change of degrader thickness, the SEU cross-section is measured and the corresponding LET calculated from the change in degrader thickness. That information is used to generate a plot of cross-section as a function of ion LET. The advantages of this approach are that the part does not have to be de-lidded and a broad range of LETs is available from a single heavy ion without having to go to non-normal angles of incidence to change the "effective" LET. As we will show, it is possible to obtain an entire curve of cross-section versus LET using just two or three ions. Fig. 1 shows curves of cross-section vs LET for a Freescale 4 Mbit SOI/SRAM measured at the 88" Cyclotron at Berkeley and at NSRL. The open symbols are the data obtained from Berkeley for top-side and back-side irradiation. The solid data points are for the data obtained at NSRL using a device for which the package was intact. The data are for Iron and Gold and cover a range of LETs from 4 MeV.cm2/mg to 84 MeV.cm2/mg. The agreement between the data obtained from Berkeley and from NSRL is excellent, demonstrating that the VDBP method is capable of providing accurate values of cross-section versus LET, at least for the 4 Mbit SRAM. Details of the technique will be included in the final presentation.

Buchner, S.↗
NASA NTRS2018

Comparison of the MODIS and VIIRS On-Board SD and SDSM Performance

The MODIS reflective solar bands (RSB) are calibrated on-orbit using a solar diffuser (SD) with its on-orbit degradation, or change in the bi-directional reflectance factor (BRF) monitored using a solar diffuser stability monitor (SDSM). By performing alternate observations of direct sunlight via an attenuation screen and of sunlight reflected diffusely off the SD, the SDSM monitors the on-orbit degradation of the SD. The MODIS SDSM has 9 detectors, covering wavelengths from 0.41 to 0.94 microns. Both Terra and Aqua MODIS instruments have successfully operated for more than 16 years on-orbit, with the SD experiencing significant degradation at the shortest wavelength (about 50 percent for Terra MODIS and about 20 percent for Aqua MODIS at 0.41 microns). The first VIIRS instrument on the Suomi NPP spacecraft was launched in October 2011 and the follow-on instrument was launched in November 2017 on the JPSS-1 spacecraft (now NOAA-20). Both the VIIRS instruments carry a MODIS-like SD and SDSM system with an improved design based on the lessons learned from MODIS. Unlike MODIS, the VIIRS SDSM collects data using 8 detectors covering a similar wavelength range as MODIS. A similar wavelength dependent SD degradation pattern is also observed in both VIIRS instruments. This paper provides a comparison of the on-orbit performance of the four instruments in terms of the on-orbit changes in the SDSM detector responses and on-orbit degradations of their SDs. The NOAA-20 VIIRS instrument is still in its first year of operation and hence the early performance of the Terra and Aqua MODIS and SNPP VIIRS is discussed to provide a perspective comparison.

VIIRS↗
NASA NTRS2014

A Range Correction for Icesat and Its Potential Impact on Ice-sheet Mass Balance Studies

We report on a previously undocumented range error in NASA's Ice, Cloud and land Elevation Satellite (ICESat) that degrades elevation precision and introduces a small but significant elevation trend over the ICESat mission period. This range error (the Gaussian-Centroid or 'G-C'offset) varies on a shot-to-shot basis and exhibits increasing scatter when laser transmit energies fall below 20 mJ. Although the G-C offset is uncorrelated over periods less than1 day, it evolves over the life of each of ICESat's three lasers in a series of ramps and jumps that give rise to spurious elevation trends of −0.92 to −1.90 cm yr(exp −1), depending on the time period considered. Using ICESat data over the Ross and Filchner-Ronne ice shelves we show that (1) the G-C offset introduces significant biases in ice-shelf mass balance estimates, and (2) the mass balance bias can vary between regions because of different temporal samplings of ICESat.We can reproduce the effect of the G-C offset over these two ice shelves by fitting trends to sample-weighted mean G-C offsets for each campaign, suggesting that it may not be necessary to fully repeat earlier ICESat studies to determine the impact of the G-C offset on ice-sheet mass balance estimates.

mass balance↗
NASA NTRS1990

Frequency stabilization for mobile satellite terminals via LORAN

Digital satellite communication systems require careful management of frequency stability. Historically, frequency stability has been accomplished by continuously powered, high cost, high performance reference oscillators. Today's low cost mobile satellite communication equipment must operate under wide ranging environmental conditions, stabilize quickly after application of power, and provide adequate performance margin to overcome RF link impairments unique to the land mobile environment. Methods for frequency stabilization in land mobile applications must meet these objectives without incurring excessive performance degradation. A frequency stabilization scheme utilizing the LORAN (Long Range Navigation) system is presented.

Ernst, Gregory J.↗
NASA NTRS2016

Evaluation of 10V Chip Polymer Tantalum Capacitors for Space Applications

Due to low ESR and safe failure mode, new technology chip polymer tantalum capacitors (CPTC) have gained popularity in the electronics design community, first in commercial applications, and now in hi-rel and space systems. The major drawbacks of these parts are high leakage currents, degradation under environmental stresses, and a relatively narrow temperature range of operating and storage conditions. Several studies have shown that a certain amount of moisture in polymer cathodes is necessary for a normal operation of the parts. This might limit applications of CPTCs in space systems and requires analysis of long-term exposure to deep vacuum conditions on their performance and reliability. High leakage currents and limited maximum operational temperature complicate accelerated testing that is necessary to assess long-term reliability and require new screening and qualification procedures for quality assurance. A better understanding of behavior of CPTCs as compared to traditional, MnO2, capacitors is necessary to develop adequate approaches for QA system for space applications. A specific of CPTCs is that different materials and processes might be used for low-voltage (10 V and less) and high-voltage (above 10 V) capacitors, so performance and degradation processes in these groups require separate analysis. In this work, that is a part of the NASA Electronic Parts and Packaging (NEPP) program, degradation of AC and DC characteristics under environmental stresses at different temperatures and voltages have been studied in nine lots of commercial and automotive grade capacitors rated to 10 V. Results of analysis of leakage currents, high temperature storage (HTS) up to 5000 hrs in vacuum and air at different temperatures, and Highly Accelerated Life Testing (HALT) in the range from 85 C to 145 C are presented. Temperature and voltage acceleration factors were calculated based on approximation of distributions of degradation rates with a general log-linear Weibull model. Mechanisms of degradation and failures, and requirements for screening and qualification testing are discussed.

Tantalum Capacitors↗