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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Investigation of Ion-Irradiated Beryllium Carbide (Be 2 C) for High-Temperature Nuclear Reactor Moderators

Beryllium carbide (Be 2 C) is an attractive alternative to graphite as a moderator material because of its high melting point, moderating efficiency, and theoretical environmental compatibility in MSRs, FHRs and HTGRs. However, its behavior under neutron irradiation is not yet known. Research on otherwise promising beryllium compounds are restricted because of the toxic nature of the material. For this work, a novel experiment was designed to safely irradiate beryllium-containing samples at The Michigan Ion Beam Laboratory (MIBL). Using this new capability, Be 2 C samples were irradiated with 9 MeV C 3+ ions from 2 dpa to 30 dpa, at temperatures up to 500 °C. Samples were characterized to investigate radiation tolerance. No evidence of phase precipitation, dislocation loops, or amorphization was observed up to 30 dpa, suggesting good radiation tolerance. One sample left in air for ~3 months oxidized slowly and lost structural integrity, while a sample kept in argon did not, suggesting that Be 2 C is not suitable for service in moist environments, but maintains its integrity in dry environments.

22 - GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS1988

InP homojunction solar cell performance on the LIPS 3 flight experiment

Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 Flight Experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

Brinker, David J.↗
NASA NTRS1988

InP homojunction solar cell performance on the LIPS III flight experiment

Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 flight experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

Brinker, David J.↗
NASA NTRS2012

Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The design is based on a proprietary library of differential current switching logic cells implemented in the standard 90-nm CMOS 9SF technology from IBM. The proprietary low-power LVDS physical interface is fully compatible with the SpaceWire standard, and can be directly connected to the SFP MSA (small form factor pluggable Multiple Source Agreement) optical transponder. The low-speed parallel interfaces are fully compatible with the standard 1.8 V CMOS input/output devices. The utilized proprietary annular CMOS layout structures provide TID tolerance above 1.2 MRad. The complete chip consumes less than 150 mW of power from a single 1.8-V positive supply source.

Katzman, Vladimir↗
NASA NTRS1987

Design considerations for a GaAs nipi doping superlattice solar cell

A new GaAs nipi doping superlattice solar cell structure is presented, which holds promise for high efficiency coupled with very high radiation tolerance. The structure has all contacts on the unilluminated side. Design constraints are presented which this structure must satisfy in order to exhibit high efficiency and high radiation tolerance. The results of self-consistent quantum mechanical calculations are presented which show that a viable design of this cell would include relatively thick n and p layers which are fairly heavily doped.

Clark, Ralph↗
DOE OSTI2025

High Radiation Resistance in the Binary W‐Ta System Through Small V Additions: A New Paradigm for Nuclear Fusion Materials

Abstract Refractory High‐Entropy Alloys (RHEAs) are promising candidates for structural materials in nuclear fusion reactors, where W‐based alloys are currently leading. Fusion materials must withstand extreme conditions, including i) severe radiation damage from energetic neutrons, ii) embrittlement due to H and He ion implantation, and iii) exposure to high temperatures and thermal gradients. Recent RHEAs, such as WTaCrV and WTaCrVHf, have shown superior radiation tolerance and microstructural stability compared to pure W, but their multi‐element compositions complicate bulk fabrication and limit practical use. In this study, it is demonstrated that reducing alloying elements in RHEAs is feasible without compromising radiation tolerance. Herein, two Highly Concentrated Refractory Alloys (HCRAs) − W 53 Ta 44 V 3 and W 53 Ta 42 V 5 (at.%) − were synthesized and investigated. We found that small V additions significantly influence the radiation response of the binary W–Ta system. Experimental results, supported by ab‐initio Monte Carlo simulations and machine‐learning‐driven molecular dynamics, reveal that minor variations in V content enhance Ta–V chemical short‐range order (CSRO), improving radiation resistance in the W 53 Ta 42 V 5 HCRA. By focusing on reducing chemical complexity and the number of alloying elements, the conventional high‐entropy alloy paradigm is challenged, suggesting a new approach to designing simplified multi‐component alloys with refractory properties for thermonuclear fusion applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1989

Directions for further development of GaAs/CuInSe2 thin film tandem cells

Multijunction thin film solar cells utilizing GaAs and CuInSe2 as semiconductor absorbers are rapidly developing, becoming a viable technology for space power systems with an unparalleled combination of high efficiency, low mass, and high radiation tolerance. The prospect for evolutionary improvement of this type of cell towards efficiency of approximately equals 30 percent and specific power greater than 1 kW/kg while retaining the attribute of high radiation tolerance are good. Limitations of the present configuration and possible avenues for circumventing these problems are presented.

Stanbery, Billy J.↗
NASA NTRS2015

High-Speed On-Board Data Processing for Science Instruments: HOPS

The project called High-Speed On-Board Data Processing for Science Instruments (HOPS) has been funded by NASA Earth Science Technology Office (ESTO) Advanced Information Systems Technology (AIST) program during April, 2012 â€" April, 2015. HOPS is an enabler for science missions with extremely high data processing rates. In this three-year effort of HOPS, Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) and 3-D Winds were of interest in particular. As for ASCENDS, HOPS replaces time domain data processing with frequency domain processing while making the real-time on-board data processing possible. As for 3-D Winds, HOPS offers real-time high-resolution wind profiling with 4,096-point fast Fourier transform (FFT). HOPS is adaptable with quick turn-around time. Since HOPS offers reusable user-friendly computational elements, its FPGA IP Core can be modified for a shorter development period if the algorithm changes. The FPGA and memory bandwidth of HOPS is 20 GB/sec while the typical maximum processor-to-SDRAM bandwidth of the commercial radiation tolerant high-end processors is about 130-150 MB/sec. The inter-board communication bandwidth of HOPS is 4 GB/sec while the effective processor-to-cPCI bandwidth of commercial radiation tolerant high-end boards is about 50-75 MB/sec. Also, HOPS offers VHDL cores for the easy and efficient implementation of ASCENDS and 3-D Winds, and other similar algorithms. A general overview of the 3-year development of HOPS is the goal of this presentation.

Beyon, Jeffrey↗
NASA NTRS1987

Computer modelling of aluminum-gallium arsenide/gallium arsenide multilayer photovoltaics

The modeled cascade cells offer an alternative to conventional series cascade designs that require a monolithic intercell ohmic contact. Selective electrodes provide a simple means of fabricating three-terminal devices, which can be configured in complementary pairs to circumvent the attendant losses and fabrication complexities of intercell ohmic contacts. Moreover, selective electrodes allow incorporation of additional layers in the upper subcell which can improve spectral response and increase radiation tolerance. Realistic simulations of such cells operating under one-sun AMO conditions show that the seven-layer structure is optimum from the standpoint of beginning-of-life efficiency and radiation tolerance. Projected efficiencies exceed 26 percent. Under higher concentration factors, it should be possible to achieve efficiencies beyond 30 percent. However, to simulate operation at high concentration will require a model for resistive losses. Overall, these devices appear to be a promising contender for future space applications.

Wagner, Michael Broderick↗
NASA NTRS2011

Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

MacLeod, Todd C.↗
NASA NTRS1989

InP (Indium Phosphide): Into the future

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

Brandhorst, Henry W., Jr.↗
NASA NTRS2011

Fault-Tolerant, Radiation-Hard DSP

Commercial digital signal processors (DSPs) for use in high-speed satellite computers are challenged by the damaging effects of space radiation, mainly single event upsets (SEUs) and single event functional interrupts (SEFIs). Innovations have been developed for mitigating the effects of SEUs and SEFIs, enabling the use of very-highspeed commercial DSPs with improved SEU tolerances. Time-triple modular redundancy (TTMR) is a method of applying traditional triple modular redundancy on a single processor, exploiting the VLIW (very long instruction word) class of parallel processors. TTMR improves SEU rates substantially. SEFIs are solved by a SEFI-hardened core circuit, external to the microprocessor. It monitors the health of the processor, and if a SEFI occurs, forces the processor to return to performance through a series of escalating events. TTMR and hardened-core solutions were developed for both DSPs and reconfigurable field-programmable gate arrays (FPGAs). This includes advancement of TTMR algorithms for DSPs and reconfigurable FPGAs, plus a rad-hard, hardened-core integrated circuit that services both the DSP and FPGA. Additionally, a combined DSP and FPGA board architecture was fully developed into a rad-hard engineering product. This technology enables use of commercial off-the-shelf (COTS) DSPs in computers for satellite and other space applications, allowing rapid deployment at a much lower cost. Traditional rad-hard space computers are very expensive and typically have long lead times. These computers are either based on traditional rad-hard processors, which have extremely low computational performance, or triple modular redundant (TMR) FPGA arrays, which suffer from power and complexity issues. Even more frustrating is that the TMR arrays of FPGAs require a fixed, external rad-hard voting element, thereby causing them to lose much of their reconfiguration capability and in some cases significant speed reduction. The benefits of COTS high-performance signal processing include significant increase in onboard science data processing, enabling orders of magnitude reduction in required communication bandwidth for science data return, orders of magnitude improvement in onboard mission planning and critical decision making, and the ability to rapidly respond to changing mission environments, thus enabling opportunistic science and orders of magnitude reduction in the cost of mission operations through reduction of required staff. Additional benefits of COTS-based, high-performance signal processing include the ability to leverage considerable commercial and academic investments in advanced computing tools, techniques, and infra structure, and the familiarity of the science and IT community with these computing environments.

Czajkowski, David↗
NASA NTRS1999

Analog Module Architecture for Space-Qualified Field-Programmable Mixed-Signal Arrays

Spacecraft require all manner of both digital and analog circuits. Onboard digital systems are constructed almost exclusively from field-programmable gate array (FPGA) circuits providing numerous advantages over discrete design including high integration density, high reliability, fast turn-around design cycle time, lower mass, volume, and power consumption, and lower parts acquisition and flight qualification costs. Analog and mixed-signal circuits perform tasks ranging from housekeeping to signal conditioning and processing. These circuits are painstakingly designed and built using discrete components due to a lack of options for field-programmability. FPAA (Field-Programmable Analog Array) and FPMA (Field-Programmable Mixed-signal Array) parts exist but not in radiation-tolerant technology and not necessarily in an architecture optimal for the design of analog circuits for spaceflight applications. This paper outlines an architecture proposed for an FPAA fabricated in an existing commercial digital CMOS process used to make radiation-tolerant antifuse-based FPGA devices. The primary concerns are the impact of the technology and the overall array architecture on the flexibility of programming, the bandwidth available for high-speed analog circuits, and the accuracy of the components for high-performance applications.

Edwards, R. Timothy↗
NASA NTRS1991

Survey of electronics capability for SP-100 space reactor power system applications

Because of reports indicating improvements in the radiation tolerance of some electronic parts, a survey was recently performed by SP-100 project personnel to determine the advisability of revising SP-100 SRPS (space reactor power systems) allowable neutron and gamma dose rates in order to reduce the size and mass of the radiation shield and thereby achieve system mass reductions. The survey results indicate that recent developments to increase the radiation tolerance of a limited set of electronics parts do not justify increasing the allowable SP-100 dose rates for electronic components. Specifically, the recent improvements on a limited set of parts do not justify increasing the current SP-100 allowable specifications of 5 x 10 exp 5 rads gamma dose and 1 x 10 exp 13 neutrons/sq cm fluence. However, if the improvements of 108 rads for gammas and 10 exp 15 neutrons/sq cm can be extended to a wide range of parts, significant mass savings would result.

Manvi, Ram↗
NASA NTRS2018

Extreme Environments Solar Power Project Enabling Solar Array Power To The Outer Planets

NASA missions such as DAWN and JUNO, as well as the planned Europa Clipper mission, rely on solar power despite their destination's extreme distance from the Sun and the high radiation environment typically encountered. This reliance on off-the-shelf state of the art solar cells has impacted mission design and ultimate performance, as solar cells designed for 1AU space applications suffer from low intensity, low temperature (LILT) performance effects and limited radiation tolerance has required additional shielding or overdesign in order to maintain EOL performance. While reasons for the performance degradation are reasonably well understood and solutions have been proposed, the lack of a continuous mission pull for improved performance has made a dedicated project to address these issues unpractical in the past. However, with NASA embarking on the Europa Clipper mission in the next decade and a recognition that improvements to radiation tolerance positively impact all space missions; NASA's Space Technology Mission Directorate has initiated a project to develop advanced solar cells that are more efficient under LILT conditions and solar array concepts, such as concentrator systems, that improve overall performance under both LILT and high radiation conditions.

McNatt, Jeremiah↗
DOE OSTI2025

Distinctive features of structural evolution and thermodynamic response in wide-bandgap semiconductors driven by intense electronic excitation

Radiation-tolerant material selection requires balancing lattice rigidity, defect dynamics, and electronic stability, as shown by covalent SiC outperforming ionic Ga 2 O 3 and GaN under extreme environments. Responding to intense electronic excitation, irradiation-driven phase segregation (β → δ/κ in Ga 2 O 3 ) and core–shell track (disordered structure in GaN), accompanied by elemental redistribution, contrastingly, exceptional radiation tolerance manifested by comparatively minimal lattice distortion (0.17 % strain variation) was demonstrated in SiC. These differential responses are primarily attributed to two fundamental mechanisms: (i) thermodynamic driving forces governing defect migration and phase separation, and (ii) the synergistic effects of robust covalent bonding composition coupled with efficient defect recombination processes. Here, the stronger electron–phonon (e-ph) coupling in Ga 2 O 3 (4.34 × 1018 W m −3 K −1 ) and GaN (3.55 × 10 18 W m −3 K −1 ) enhances lattice energy deposition, triggering thermal spikes (ΔT ≫ T m ) and structural transition behaviors, whereas weaker e-ph coupling in SiC (3.69 × 10 18 W m −3 K −1 ), relatively high thermodynamic parameters and efficient energy dissipation suppress thermal spikes to maintaining lattice integrity. The photoresponse degradation driven by enhanced radiative recombination is dominant in N-doped SiC, while V-doped systems achieve defect-mediated photoconduction optimization characterized by abrupt current transitions, matching fluorescence yield evolutions, and directly connecting defect engineering to optoelectronic performance.

Intense electronic excitation↗
NASA NTRS2021

LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.

gallium nitride (GaN)↗
NASA NTRS1996

Recent Advances in Solar Cell Technology

The advances in solar cell efficiency, radiation tolerance, and cost over the last decade are reviewed. Potential performance of thin-film solar cells in space are discussed, and the cost and the historical trends in production capability of the photovoltaics industry are considered with respect to the requirements of space power systems. Concentrator cells with conversion efficiency over 30%, and nonconcentrating solar cells with efficiency over 25% are now available, and advanced radiation-tolerant cells and lightweight, thin-film arrays are both being developed. Nonsolar applications of solar cells, including thermophotovoltaics, alpha- and betavoltaics, and laser power receivers, are also discussed.

Landis, Geoffrey A.↗