Radiation damage to semiconductors by high energy electrons Final progress report, 15 Mar. 1967 - 15 Mar. 1968
Radiation damage to silicon and germanium semiconductors by high energy electrons
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Radiation damage to silicon and germanium semiconductors by high energy electrons
Alpha particles radiation damage effects in silicon surface barrier detector
High-voltage electron microscopy has been used to compare radiation effects in micron-size soil grains from the Luna 16 site (Mare Fecunditatis) and the four Apollo landing sites. Radiation damage by heavy solar particles is strikingly greater in the Luna 16 sample than in the other four samples. It is suggested that less movement of the soil at Mare Fecunditatis has taken place, perhaps because of its proximity to the limb and consequent lower exposure to energetic electrons in the earth's magnetospheric tail, which would cause electrostatic agitation of fine particles.
Design and performance of an experimental silicon p-n junction cell which is resistant to radiation damage and intended for space application
Analysis of data produced by Applications Technology Satellite 1 solar cell radiation damage experiment
The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.
In this report, concepts and equations are developed to describe the simultaneous radiation damage and annealing of solar cells. The annealing characteristics of three types of defects are employed to study three examples of continuous irradiation and annealing. One example shows that the effective damage could be reduced by a factor of fifty. The difficulty of a laboratory experiment properly simulating the effects in space are discussed. Potential advantages of continuous annealing such as reduction of stable defect formation and omission of radiation cover glasses are presented.
Observed paramagnetic center, effects of impurities on radiation damage of silicon, and low energy proton bombardment of silicon and gallium arsenide solar cells
Instrumentation and methods for study of radiation damage in lithium diffused silicon using infrared photoconductivity and spectroscopy as probes
Describing instrumentation and methods used in study of radiation damage in lithium-diffused silicon
The objective of this work was to evaluate the effect of electron flux and temperature on radiation damage in GaAs solar cells. The defect levels and the power ratio of the GaAs solar cells under various irradiation conditions are compared. In a 200 C continuous annealing experiment, the GaAs solar cells which were irradiated at a flux of 2 x 10 to the 9th e/sq cm s suffered less power degradation than the cells which were irradiated at the same temperature at a higher flux of 4 x 10 to the 10th e/sq cm s. After the continuous annealing experiment, a single-step post annealing at 200 C was performed for 40 hr on these irradiated cells. An additional improvement in power recovery was observed only on those cells irradiated at the high flux of 4 x 10 to the 10th e/sq cm s. DLTS data indicate that the defect density decreases with lower electron flux. Both of these observations strongly suggest that the continuous annealing in GaAs cells can be effective at temperatures as low as 150 C, or even less in a space environment such as geosynchronous orbit.
Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.
A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.
The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.
As part of the database for building up a biochemical model of DNA radiation damage, electron impact ionization cross sections of sugar-phosphate backbone and DNA bases have been calculated using the improved binary-encounter dipole (iBED) model. It is found that the total ionization cross sections of C3'- and C5'-deoxyribose-phospate, two conformers of the sugar-phosphate backbone, are close to each other. Furthermore, the sum of the ionization cross sections of the separate deoxyribose and phosphate fragments is in close agreement with the C3'- and C5'-deoxyribose-phospate cross sections, differing by less than 10%. Of the four DNA bases, the ionization cross section of guanine is the largest, then in decreasing order, adenine, thymine, and cytosine. The order is in accordance with the known propensity of oxidation of the bases by ionizing radiation. Dissociative ionization (DI), a process that both ionizes and dissociates a molecule, is investigated for cytosine. The DI cross section for the formation of H and (cytosine-Hl)(+), with the cytosine ion losing H at the 1 position, is also reported. The threshold of this process is calculated to be 17.1 eV. Detailed analysis of ionization products such as in DI is important to trace the sequential steps in the biochemical process of DNA damage.
The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.
Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Radiation Handbook (JPL 96-9). An alternative, the displacement damage dose (D(sub d)) method, has been developed by Summers, et al. This method is currently being implemented in the SAVANT computer program.
Using an electron scanning microscope and a high voltage microscope, a study was made of the radiation damage and structure of micron sized grains and grains separated from the 200-mesh fraction of the L-16-19 surface material sample. Then the structural features were compared with those found by studying with the same techniques grains separated from 20 different samples of lunar dust taken from the Apollo 11, Apollo 12, Apollo 14, and Apollo 15 collections. The L-16-19 sample is similar to the most intensely irradiated samples returned to earth by Apollo craft.