SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The research on solar wind radiation damage and other effects in lunar samples which was conducted to understand the optical properties of lunar materials is reported. Papers presented include: solar radiation effects in lunar samples, albedo of the moon, radiation effects in lunar crystalline rocks, valence states of 3rd transition elements in Apollo 11 and 12 rocks, and trace ferric iron in lunar and meteoritic titanaugites.
Solar cell radiation damage on Relay 1 and Relay 2 satellites
Radiation damage of vanadium carbide lattice by electron microscope beam bombardment
Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.
Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb -1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 10 14 1 MeV neutron-equivalent cm -2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors' response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation
Radiation damage centers in silicon - electron paramagnetic resonance study
Radiation damage in silicon solar cells and annealing or compensation of damage by impurities
A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.
Understanding radiation effects on avalanche photodiodes (APDs) is important because they are used in several applications involving harsh radiation environments. APDs are used as photosensors in applications where speed and detection efficiency are critical. Proton irradiation experiments on a commercial off-the-shelf APD demonstrated that the irradiation flux and applied reverse bias have a strong influence on the severity of radiation effects. This is measured using the ion beam induced charge (IBIC) technique in which charge collection efficiency (CCE) describes the signal response from a device. CCE can degrade substantially due to radiation damage, but recent measurements show that certain combinations of irradiation flux and reverse bias can lead to increases in CCE up to 186% ± 24% for irradiations with 2 MeV protons at a fluence of 6.4 × 10 11 cm –2 . This defect-enhanced charge multiplication (DECM) only appeared when the reverse bias during irradiation ranged from 170 to 1830 V out of a maximum operating bias of 2000 V and the proton flux ranged from 9.8 × 10 7 to 3.4 × 10 9 cm –2 s –1 . Furthermore values outside of either range led to losses in CCE. It is expected that DECM should be encountered in other devices, especially those with sufficiently high electric fields to cause impact ionization.
Solar panel system for thermally annealing radiation damaged solar cells
Infrared absorption spectra of impurities and radiation damage in silicon semiconductors
The purpose of this document is to distill, from literature, the effects of radiation damage in fused-silica optical fibers. This information will be used to design a theoretical framework capable of predictive modeling that will be published elsewhere. By inspection of the relevant literature, the devised method is calculation of defect amorphous structures by molecular dynamic techniques, and computation of the macroscopic dielectric function using density functional theory. The dielectric function is then used to directly compute the transmittance of the core material before and after irradiation via solution of Maxwell’s equations in a homogeneous medium.
The Mu2e experiment aims to search for the charged lepton flavour violating (CLFV) process of a coherent, neutrinoless, conversion of a muon into an electron within the proximity of an aluminium nucleus. Mu2e seeks to measure the ratio (R μe ) of the rate of this conversion process, relative to that of ordinary muon capture. Mu2e will achieve world-leading sensitivity, improving the current limit of Rμe < 7 ×10 -13 (90% C.L.),set by the SINDRUM-II experiment, by an order of 104. This corresponds to a single-event sensitivity of Rμe < 2.87 × 10 -17 (90% C.L.). Many beyond Standard Model (BSM) theories require CLFV to occur at a rate accessible by Mu2e. Any observation of CLFV at Mu2e would have profound implications on particle physics. The Stopping Target Monitor (STM) will be comprised of both a HPGe and a LaBr3 detector which will monitor the signals of photons produced in stopped-muon processes to a required accuracy of 10%. To achieve the desired sensitivity, it is imperative that the detectors perform at their optimal level. The STM detectors are placed within a harsh radiation environment in the form of a high energy ‘flash’ of gamma radiation as well as a flux of fast neutrons. Estimations of radiation damage to HPGe in literature is limited. This thesis reports an approach which utilizes the Kinetic-Energy Released in Matter (KERMA) parameter that considers the energy dependence of the incident flux and the cross-section information for the incident particle. Resampling schemes have been adopted to give a realistic rate over the experiment run time. The results have then been normalized to the radiation damage caused by a 252 Cf source. The estimated time before annealing of the detector is necessary is found to be 75 and 78 months in the case of neutron damage and τ ~ 24 years, 11 months in the case of electron/positron induced damage. This shows significant improvement on the previous estimations.
Silicon solar cells radiation damage shielding on ATS 1 synchronous spacecraft
As an extension of previous studies of radiation damage produced by heavy solar flare ions in lunar soils, high-voltage electron microscopy and electron diffraction procedures were used to rank a Luna 20 sample among the other soils returned by Soviet and American lunar missions. Micron-sized soil grains from the Luna 20 mission are the most lightly irradiated, in contrast to micron-sized grains from Luna 16 soil, which are the most heavily irradiated.
Variable-temperature cryostats developed to study radiation damage to, and annealing of, germanium gamma-ray detectors. Two styles: one accommodates large single detector and one accommodates two medium-sized detectors. New cryostats allow complete testing of large-volume germanium gamma-ray detectors without breaking cryostat vacuum and removing detectors for annealing.
Phenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors
Fast and heavy inorganic scintillators with suitable radiation tolerance are required to face the challenges presented at future hadron colliders of high energy and intensity. Up to 5 GGy and 5 × 1018 neq/cm2 of one-MeV-equivalent neutron fluence is expected by the forward calorimeter at the Future Hadron Circular Collider. This paper reports the results of an investigation of proton- and neutron-induced radiation damage in various fast and heavy inorganic scintillators, such as LYSO:Ce crystals, LuAG:Ce ceramics, and BaF2 crystals. The experiments were carried out at the Blue Room with 800 MeV proton fluence up to 3.0 × 1015 p/cm2 and at the East Port with one MeV equivalent neutron fluence up to 9.2 × 1015 neq/cm2, respectively, at the Los Alamos Neutron Science Center. Experiments were also carried out at the CERN PS-IRRAD proton facility with 24 GeV proton fluence up to 8.2 × 1015 p/cm2. Research and development will continue to develop LuAG:Ce ceramics and BaF2:Y crystals with improved optical quality, F/T ratio, and radiation hardness.