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At least 109 records · Page 6

Advanced Silicon Avalanche Photodiodes on NASA's Global Ecosystem Dynamics Investigation (GEDI) Mission

Silicon Avalanche Photodiodes (APDs) are used in NASA’s Global Ecosystem Dynamics Investigation (GEDI) which was launched in December 2018 and is currently measuring the Earth’s vegetation vertical structure from the International Space Station. The APDs were specially made for space lidar with a much lower hole-to-electron ionization coefficient ratio (k-factor ~0.008) than that of commercially available silicon APDs in order to reduce the APD excess noise from the randomness of the avalanche gain. A silicon heater resistor was used under the APD chip to heat the device up to 70°C and improve its quantum efficiency at 1064 nm laser wavelength while maintaining a low dark current such that the overall signal to noise ratio is improved. Special APD protection circuits were used to raise the overload damage threshold to prevent device damage from strong laser return by specular surfaces, such as still water bodies, and space radiation events. The APD and a hybrid transimpedance amplifier circuit were hermetically sealed in a package with a sufficiently low leak rate to ensure multi-year operation lifetime in space. The detector assemblies underwent a series of pre-launch tests per NASA Goddard Environmental Verification Standard for space qualification. They have performed exactly as expected with GEDI in orbit. A detailed description of the GEDI detector design, signal and noise model, and test results are presented in this paper.

Sun, Xiaoli↗

Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

Kwon, Y.↗

Neurodynamic oscillators

Oscillation of electrical activity has been found in many nervous systems, from invertebrates to vertebrates including man. There exists experimental evidence of very simple circuits with the capability of oscillation. Neurons with intrinsic oscillation have been found and also neural circuits where oscillation is a property of the network. These two types of oscillations coexist in many instances. It is nowadays hypothesized that behind synchronization and oscillation there is a system of coupled oscillators responsible for activities that range from locomotion and feature binding in vision to control of sleep and circadian rhythms. The huge knowledge that has been acquired on oscillators from the times of Lord Rayleigh has made the simulation of neural oscillators a very active endeavor. This has been enhanced with more recent physiological findings about small neural circuits by means of intracellular and extracellular recordings as well as imaging methods. The future of this interdisciplinary field looks very promising; some researchers are going into quantum mechanics with the idea of trying to provide a quantum description of the brain. In this work we describe some simulations using neuron models by means of which we form simple neural networks that have the capability of oscillation. We analyze the oscillatory activity with root locus method, cross-correlation histograms, and phase planes. In the more complicated neural network models there is the possibility of chaotic oscillatory activity and we study that by means of Lyapunov exponents. The companion paper shows an example of that kind.

Espinosa, Ismael↗

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

Jhabvala, M.↗

Making Superconducting Welds between Superconducting Wires

A technique for making superconducting joints between wires made of dissimilar superconducting metals has been devised. The technique is especially suitable for fabrication of superconducting circuits needed to support persistent electric currents in electromagnets in diverse cryogenic applications. Examples of such electromagnets include those in nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI) systems and in superconducting quantum interference devices (SQUIDs). Sometimes, it is desirable to fabricate different parts of a persistent-current-supporting superconducting loop from different metals. For example, a sensory coil in a SQUID might be made of Pb, a Pb/Sn alloy, or a Cu wire plated with Pb/Sn, while the connections to the sensory coil might be made via Nb or Nb/Ti wires. Conventional wire-bonding techniques, including resistance spot welding and pressed contact, are not workable because of large differences between the hardnesses and melting temperatures of the different metals. The present technique is not subject to this limitation. The present technique involves the use (1) of a cheap, miniature, easy-to-operate, capacitor-discharging welding apparatus that has an Nb or Nb/Ti tip and operates with a continuous local flow of gaseous helium and (2) preparation of a joint in a special spark-discharge welding geometry. In a typical application, a piece of Nb foil about 25 m thick is rolled to form a tube, into which is inserted a wire that one seeks to weld to the tube (see figure). The tube can be slightly crimped for mechanical stability. Then a spark weld is made by use of the aforementioned apparatus with energy and time settings chosen to melt a small section of the niobium foil. The energy setting corresponds to the setting of a voltage to which the capacitor is charged. In an experiment, the technique was used to weld an Nb foil to a copper wire coated with a Pb/Sn soft solder, which is superconducting. The joint was evaluated as part of a persistent-current circuit having an inductance of 1 mH. A current was induced in a loop, and no attenuation of the current after a time interval 1,000 s was discernible in a measurement having a fractional accuracy of 10(exp -4): This observation supports the conclusion that the weld had an electrical resistance <10(exp -10) omega.

Penanen, Konstantin I.↗

Stacked Metal Silicide/Silicon Far-Infrared Detectors

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

Maserjian, Joseph↗

High-efficiency AlGaAs-GaAs Cassegrainian concentrator cells

AlGaAs-GaAs heteroface space concentrator solar cells have been fabricated by metalorganic chemical vapor deposition. AMO efficiencies as high as 21.1% have been observed both for p-n and np structures under concentration (90 to 100X) at 25 C. Both cell structures are characterized by high quantum efficiencies and their performances are close to those predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density.

Werthen, J. G.↗

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Scheiman, David A.↗

Superconducting Digital Multiplexers for Sensor Arrays

Arrays of cryogenic microbolometers and other cryogenic detectors are being developed for infrared imaging. If the signal from each sensor is amplified, multiplexed, and digitized using superconducting electronics, then this data can be efficiently read out to ambient temperature with a minimum of noise and thermal load. HYPRES is developing an integrated system based on SQUID amplifiers, a high-resolution analog-to-digital converter (ADC) based on RSFQ (rapid single flux quantum) logic, and a clocked RSFQ multiplexer. The ADC and SQUIDs have already been demonstrated for other projects, so this paper will focus on new results of a digital multiplexer. Several test circuits have been fabricated using Nb Josephson technology and are about to be tested at T = 4.2 K, with a more complete prototype in preparation.

Kadin, Alan M.↗

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Goldberg, A.↗

A general numerical analysis program for the superconducting quasiparticle mixer

A user-oriented computer program SISCAP (SIS Computer Analysis Program) for analyzing SIS mixers is described. The program allows arbitrary impedance terminations to be specified at all LO harmonics and sideband frequencies. It is therefore able to treat a much more general class of SIS mixers than the widely used three-frequency analysis, for which the harmonics are assumed to be short-circuited. An additional program, GETCHI, provides the necessary input data to program SISCAP. The SISCAP program performs a nonlinear analysis to determine the SIS junction voltage waveform produced by the local oscillator. The quantum theory of mixing is used in its most general form, treating the large signal properties of the mixer in the time domain. A small signal linear analysis is then used to find the conversion loss and port impedances. The noise analysis includes thermal noise from the termination resistances and shot noise from the periodic LO current. Quantum noise is not considered. Many aspects of the program have been adequately verified and found accurate.

Hicks, R. G.↗

Recent Developments in Quantum-Well Infrared Photodetectors

Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.

Gunapala, S. D.↗

Improved Starting Materials for Back-Illuminated Imagers

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Pain, Bedabrata↗

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗

Embedding impedance approximations in the analysis of SIS mixers

Future millimeter-wave radio astronomy instruments will use arrays of many SIS receivers, either as focal plane arrays on individual radio telescopes, or as individual receivers on the many antennas of radio interferometers. Such applications will require broadband integrated mixers without mechanical tuners. To produce such mixers, it will be necessary to improve present mixer design techniques, most of which use the three-frequency approximation to Tucker's quantum mixer theory. This paper examines the adequacy of three approximations to Tucker's theory: (1) the usual three-frequency approximation which assumes a sinusoidal LO voltage at the junction, and a short-circuit at all frequencies above the upper sideband; (2) a five-frequency approximation which allows two LO voltage harmonics and five small-signal sidebands; and (3) a quasi five-frequency approximation in which five small-signal sidebands are allowed, but the LO voltage is assumed sinusoidal. These are compared with a full harmonic-Newton solution of Tucker's equations, including eight LO harmonics and their corresponding sidebands, for realistic SIS mixer circuits. It is shown that the accuracy of the three approximations depends strongly on the value of omega R(sub N)C for the SIS junctions used. For large omega R(sub N)C, all three approximations approach the eight-harmonic solution. For omega R(sub N)C values in the range 0.5 to 10, the range of most practical interest, the quasi five-frequency approximation is a considerable improvement over the three-frequency approximation, and should be suitable for much design work. For the realistic SIS mixers considered here, the five-frequency approximation gives results very close to those of the eight-harmonic solution. Use of these approximations, where appropriate, considerably reduces the computational effort needed to analyze an SIS mixer, and allows the design and optimization of mixers using a personal computer.

Kerr, A. R.↗

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

low-noise preamplifier↗

Spectrally Resolved Synthetic Aperture Imaging Interferometer: Final Report of NASA Innovative Advanced Concepts - Phase 1 Study

The Spectrally Resolved Synthetic-Aperture Imaging Interferometer (SRSAII) is a system proposed to provide high-resolution and high-sensitivity measurements of astronomical objects. SRSAII uses long baseline interferometric methods to achieve the resolution and low-noise, high time-precision detection to achieve the sensitivity. The primary goal of the SRSAII study was to lay out a framework for using new optical physics technologies to directly resolve, both spatially and spectrally, the disk of an exoplanet. In addition to the ambitious goal of directly resolving an exoplanet, the SRSAII team also sought to identify science opportunities achievable with intermediate system configurations which may offer resolution significantly higher than the current state of the art, but insufficient for direct resolution of an exoplanetary disk. An operational SRSAII system can function with essentially arbitrarily large baselines, achieving correspondingly high angular resolution. The primary limitation occurs in the system sensitivity, which became the major technical focus for study. In this report, we compare the predicted performance (sensitivity in SNR (Signal-to-Noise Ratio) along with angular resolution) of three interferometric techniques: direct detection (also known as homodyne interferometry), multi-channel intensity interferometry (using the Hanbury Brown and Twiss effect), and multi-channel heterodyne interferometry (using an optical frequency comb as a local oscillator). Additionally, quantum-assisted interferometry is also explored as a prospective enhancement of established methods. This report presents a survey of the technologies that enable the SRSAII techniques - optical frequency combs, single photon detectors, and photonic integrated circuits. These technologies are the basis of methods critical to SRSAII's success: precision timing, length and frequency metrology, sensitive photodetection, fine-scale wavelength filtering, and dense multi-channel operation. Lastly, we give some notional performance metrics and propose some possible experimental observations.

High Resolultion↗

Exploration Architecture with Quantum Inertial Gravimetry and In-Situ ChipSat Sensors

The Dual Exploration Architecture is a mission concept that combines remote sensing and in-situ observations into a single mission to answer planetary science questions that can only be answered with both types of data. Adoption of dual exploration architectures may short circuit the long, slow cycle of missions to inaccessible bodies by eliminating the need for separate precursor and follow-up missions. Additionally, the dual architecture possesses inherent flexibility that enables the design of adaptive, event-driven missions that are very different from traditional, largely pre-planned missions. Five key observations about the state and trends of planetary science exploration lead us to the dual architecture: increasing complexity of observations; scarcity of future mission opportunities; desire to capture transitory events; continued miniaturization of spacecraft components; and the Mars exploration cycle. Our goal in this study is to explore missions that can only happen using the dual architecture concept and find technology development needs that must be filled for those missions to compete. A survey of historical and current missions finds that opportunities for exploration are becoming less frequent, causing the flexibility and dual-nature elements of each mission to become more common. The dual exploration architecture takes these trends to their far conclusion, attempting to eliminate precursor and follow-up missions while still returning more scientific payoff. A study of the future of planetary science goals through the decadal survey reveals broad applicability of dual missions to solve mysteries that cannot be answered with a traditional mission architecture. These missions fall into three broad classes: choosing a local target from a global survey; dynamic/reactive science; and global in-situ networks. Two example missions of each class are notionally described. A deeper look at these dual architecture classes reveals four technology development needs that must be addressed for wide adoption of dual missions: passive landers; guided atmospheric probes; robust sensing packages; and small, precise orbital instruments. This study pursues a specific focus on two examples of such enabling technologies: the ChipSat and cold atom gravimetry. The ChipSat is a fully functional spacecraft-on-a-chip system that has broad versatility in the dual architecture mission space. Initial studies show that ChipSats could survive as passive impactor landers on bodies up to the size of Europa. Furthermore, COTS (Commercial Off-The-Shelf) components could provide an in-situ sensor suite that readily answers a number of pressing planetary science questions. Cold atom gravimetry uses inertial sensors based on light-pulse atom interferometry in a small form factor to map the gravity field of a body to precision equaling what would normally require two full spacecraft to achieve. The cold atom gravimeter provides an example of how advanced remote sensing capability can enable dual missions by providing greater returns in a significantly smaller package. Using the above two technologies, we study an example dual-architecture mission to both characterize and sample the subsurface oceans at Europa. The greatest scientific return in terms of detecting extraterrestrial life is in those regions where Europa’s ice crust is thin. The identification of regions with thin ice should therefore precede the selection of surface targets and dispatch of probes to those targets. This two-step process, if accomplished by separate flagship-scale missions, might take decades. As a result, a combined mission to both identify thin areas of Europa’s ice and follow up with surface observations at those regions is a good candidate for the dual-exploration architecture. This example mission consists of an orbiter spacecraft carrying a cold atom gravimeter capable of sensing or inferring the ice thickness on regional to local scales, along with a number of ChipSat probes capable of landing on the moon. The small size and weight of the ChipSats allows large numbers of them to be carried, ensuring that enough can be dropped to ensure survival of a minimum number of probes and potentially allowing for the in-situ sampling of multiple locations on the moon. The example missions and Europa case study show that amazing scientific return can obtained from dual-exploration architecture missions with a single launch by breaking the long timescales of planetary exploration and providing the flexibility to capturing transitory events and collect data across the local, regional, and global scales.

Exploration↗