Electrode materials for charge coupled devices
The use of polycrystalline silicon in charged coupled semiconductor devices is discussed. In particular, the electrical and optical properties of the material are characterized.
Gajda, W. T. J.↗
SEARCH · Engineering Papers
Results for “polycrystalline material”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A low-cost polysilicon process based on the synthesis and decomposition of dichlorosilane
Major process steps of a dichlorosilane based chemical vapor deposition (CVD) process for the production of polycrystalline silicon have been evaluated. While an economic analysis of the process indicates that it is not capable of meeting JPL/DOE price objectives ($14.00/kg in 1980 dollars), product price in the $19.00/kg to $25.00/kg range may be achieved. Product quality has been evaluated and ascertained to be comparable to semiconductor-grade polycrystalline silicon. Solar cells fabricated from the material are also equivalent to those fabricated from semiconductor-grade polycrystalline silicon.
Mccormick, J. R.↗
Scaling attenuation data characterizes changes in material microstructure
Ultrasonic attenuation was measured for polycrystalline samples of nickel and copper with various grain-size distributions produced by heat treatment. Attenuation as a function of frequency was determined for a sample having a known mean grain diameter D. It was found that, once this function is determined, it can be scaled to determine the mean grain size of other samples of the same material with different mean grain diameters. These results were obtained using broadband pulse-echo ultrasound in the 25 to 100 MHz frequency range. The results suggest an ultrasonic, nondestructive approach for verifying heat treatment of metals.
Generazio, E. R.↗
Inorganic Photovoltaics Materials and Devices: Past, Present, and Future
This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.
Hepp, Aloysius F.↗
Evaluation of silicon-on-ceramic material for low-cost solar cells
The silicon-on-ceramic (SOC) process produces thin layers of silicon on inexpensive ceramic substrates. The layers are produced by unidirectional solidification of molten silicon, and are polycrystalline. Solar cells made from SOC material have performed with a conversion efficiency of 10.5%. In connection with the objective to improve the efficiency of SOC solar cells, an investigation was conducted to assess the relative importance of grain boundaries and impurities. In order to separate the two effects, light-beam-induced current (LBIC) measurements of the short-circuit current were made using a micron-sized light beam from a monochromator. The LBIC measurements are closely related to solar cell performance since the technique identifies the various spatial and spectral contributions to solar cell current. On the basis of the obtained results, it appears that structural defects are more important than chemical defects in limiting the performance of present SOC solar cells.
Zook, J. D.↗
Marked influence of crystal structure on the friction and wear characteristics of cobalt and cobalt-base alloys in vacuum to 10-9 millimeter of mercury. i- polycrystalline and single crystal cobalt
Friction and wear characteristics for polycrystalline cobalt sliding on various materials in high vacuum
SLIDING FRICTION↗
Silicon solar cells, a manufacturing cost analysis
A detailed cost analysis of solar cell module manufacturing, utilizing process sequences incorporating near-term technology, has been performed. The entire structuring of a factory to manufacture solar cell modules, starting from supplied polycrystalline silicon and other raw materials, was specified. This analysis then formed the basis for a sensitivity analysis of the major cost factors. The results of the cost and sensitivity analyses are presented here.
Grenon, L. A.↗
Fatigue Failure Criteria for Single Crystal Nickel Superalloys
High Cycle Fatigue (HCF) induced failures in aircraft gas-turbine and rocket engine turbopump blades is a pervasive problem. Single crystal turbine blades are being utilized in rocket engine turbopumps and jet engines throughout industry and NASA because of their superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys. Single-crystal materials have highly orthotropic properties making the position of the crystal lattice relative to the pan geometry a significant factor in the overall analysis. The failure modes of single crystal turbine blades is complicated to predict due to the material orthotropy and variations in crystal orientations. A fatigue failure criteria based on the maximum shear stress amplitude [delta t max] on the 30 slip systems, is presented for single crystal nickel superalloys (FCC crystal). This criteria reduces the scatter in uniaxial LCF test data, for four different specimen orientations, for PWA 1484 at 1200 F in air, quite well. A power law curve fit of the failure parameter, delta t max, vs. cycles to failure is presented.
Arakere, Nagaraj K.↗
Top-Coating Silicon Onto Ceramic
Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.
Heaps, J. D.↗
Contact Angles and Surface Tension of Germanium-Silicon Melts
Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.
Croell, A.↗
Magnetic and Electrical Characteristics of Permalloy Thin Tape Bobbin Cores
The core loss, that is, the power loss, of a soft ferromagnetic material is a function of the flux density, frequency, temperature, excitation type (voltage or current), excitation waveform (sine, square, etc.) and lamination or tape thickness. In previously published papers we have reported on the specific core loss and dynamic B-H loop results for several polycrystalline, nanocrystalline, and amorphous soft magnetic materials. In this previous research we investigated the effect of flux density, frequency, temperature, and excitation waveform for voltage excitation on the specific core loss and dynamic B-H loop. In this paper, we will report on an experimental study to investigate the effect of tape thicknesses of 1, 1/2, 1/4, and 1/8-mil Permalloy type magnetic materials on the specific core loss. The test cores were fabricated by winding the thin tapes on ceramic bobbin cores. The specific core loss tests were conducted at room temperature and over the frequency range of 10 kHz to 750 kHz using sine wave voltage excitation. The results of this experimental investigation will be presented primarily in graphical form to show the effect of tape thickness, frequency, and magnetic flux density on the specific core loss. Also, the experimental results when applied to power transformer design will be briefly discussed.
Schwarze, Gene E.↗
Genesis Field Recovery
The Genesis mission returned to Earth on September 8, 2004 after a nearly flawless three-year mission to collect solar matter. The intent was to deploy a drogue chute and parafoil high over the Utah desert and to catch the fragile payload capsule in mid-air by helicopter. The capsule would then be opened in a clean-room constructed for that purpose at UTTR, and a nitrogen purge was to be installed before transporting the science canister to JSC. Unfortunately, both chutes failed to deploy, causing the capsule to fall to the desert floor at a speed of nearly 200 MPH. Still, Genesis represents a milestone in the US space program, comprising the first sample return since the Apollo Missions as well as the first return of materials exposed to the space environment outside of low Earth orbit and beyond the Earth s magnetosphere for an extended period. We have no other comparable materials in all of our collections on Earth. The goal of the Genesis Mission was to collect a representative sample of the composition of the solar wind and thus, the solar nebula from which our solar system originated. This was done by allowing the naturally accelerated species to implant shallowly in the surfaces of ultra-pure, ultra-clean collector materials. These collectors included single crystal silicon (FZ and CZ), sapphire, silicon carbide; those materials coated with aluminum, silicon, diamond like carbon, and gold; and isotopically enriched polycrystalline diamond and amorphous carbon. The majority of these materials were distributed on five collector arrays. Three of the materials were housed in an electrostatic concentrator designed to increase the flux of low-mass ions. There was also a two-inch diameter bulk metallic glass collector and a gold foil, polished aluminum, and molybdenum coated platinum foil collector. An excellent review of the Genesis collector materials is offered in reference [1].
McNamara, K. M.↗
Silicon solar cell process development, fabrication and analysis
A program plan, baseline process, measurement program and quality control plan were generated. Cutting operations were completed on the silicon sheet material. The first fabrication run of polycrystalline silicon into solar cells by baseline process was completed. Average conversion efficiency for solar cells fabricated by the baseline process from sheet and measured at air mass zero was 10.4%, compared with the control cells, fabricated from single crystal CZ silicon, whose average conversion efficiency was 12.2%.
Source record↗
Silicon materials outlook study for 1980-1985 calendar years
The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.
Costogue, E.↗
Texturing of high T(sub c) superconducting polycrystalline fibers/wires by laser-driven directional solidification in an thermal gradient
This paper summarizes the technique of laser-driven directional solidification in a controlled thermal gradient of yttria stabilized zirconia core coated Y-Ba-Cu-O materials to produce textured high T(sub c) superconducting polycrystalline fibers/wires with improved critical current densities in the extended range of magnetic fields at temperatures greater than 77 K. The approach involves laser heating to minimize phase segregation by heating very rapidly through the two-phase incongruent melt region to the single phase melt region and directionally solidifying in a controlled thermal gradient to achieve highly textured grains in the fiber axis direction. The technique offers a higher grain growth rate and a lower thermal budget compared with a conventional thermal gradient and is amenable as a continuous process for improving the J(sub c) of high T(sub c) superconducting polycrystalline fibers/wires. The technique has the advantage of suppressing weak-link behavior by orientation of crystals, formation of dense structures with enhanced connectivity, formation of fewer and cleaner grain boundaries, and minimization of phase segregation in the incongruent melt region.
Varshney, Usha↗
High efficiency thin-film GaAs solar cells
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.
Stirn, R. J.↗
Magnetomechanical damping in cryogenic TbDy
Vibration damping in polycrystalline TbDy alloys was studied at cryogenic temperatures. The material was prepared by cold-rolling to induce crystallographic texture, and was then heat-treated to relieve internal stress. Mechanical hysteretic losses were measured at various strains, frequencies, and loading configurations at 77 K. Some textured TbDy materials demonstrated 22.6% energy dissipation in mechanical measurements at low frequency (0.01 Hz) and a mean logarithmic decrement of 0.23 at a higher frequency (25 kHz). Ultrasonic velocities of longitudinal and shear elastic waves were measured on single and polycrystalline TbDy; little variation in ultrasonic velocities was found evenfor samples with large variation in crystallographic texture and magnetomechanical properties.
magnetomechanical TbDy↗
Dielectric Performance of High Purity HTCC Alumina at High Temperatures - A Comparison Study with Other Polycrystalline Alumina
A very high purity (99.99+) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this co-fired material. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96 polycrystalline alumina (96 Al2O3), where 96 alumina was used as the benchmark. A prototype packaging system based on regular 96 alumina with Au thick-film metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500C. In order to evaluate this new HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96 alumina and a LTCC alumina from room temperature to 550C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96 alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.
High temperature↗